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At least 19 records

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NASA NTRS2006

Ubiquitous Low-FeO Relict Grains in Type II Chondrules and Limited Overgrowths on Phenocrysts Following the Final Melting Event

Type II porphyritic chondrules commonly contain several large (>40 microns) olivine phenocrysts; furnace-based cooling rates based on the assumption that these phenocrysts grew in a single-stage melting-cooling event yield chondrule cooling-rate estimates of 0.01-1 K/s. Because other evidence indicates much higher cooling rates, we examined type 11 chondrules in the CO3.0 chondrites that have experienced only minimal parent-body alteration. We discovered three kinds of evidence indicating that only minor (4-10 microns) olivine growth occurred after the final melting event: (1) Nearly all (>90%) type II chondrules in CO3.0 chondrites contain low-FeO relict grains; overgrowths on these relicts are narrow, in the range of 2-12 microns. (2) Most type II chondrules contain some FeO-rich olivine grains with decurved surfaces and acute angles between faces indicating that the grains are fragments from an earlier generation of chondrules; the limited overgrowth thicknesses following the last melting event are too thin to disguise the shard-like nature of these grains. (3) Most type II chondrules contain many small (<20 microns) euhedral or subhedral phenocrysts with central compositions that are much more ferroan than the centers of the large phenocrysts; their small sizes document the small amount of growth that occurred after the final melting event. If overgrowth thicknesses were small (4-10 microns) after the final melting event, it follows that large fractions of coarse (>40 microns) high-FeO phenocrysts are relicts from earlier generations of chondrules, and that cooling rates after the last melting event were much more rapid than indicated by models based on a single melting event. These observations are thus inconsistent with the "classic" igneous model of formation of type II porphyritic chondrules by near-total melting of a precursor mix followed by olivine nucleation on a very limited number of nuclei (say, <10) and by growth to produce the large phenocrysts during a period of monotonic (and roughly linear) cooling. Our observations that recycled chondrule materials constitute a large component of the phenocrysts of type II chondrules also imply that this kind of chondrule formed relatively late during the chondrule-forming period.

Wasson, John T.↗

NASA NTRS2003

High Cooling Rates of Type-II Chondrules: Limited Overgrowths on Phenocrysts Following the Final Melting Event

In a study of type-II chondrules in Y81020 Wasson and Rubin (2003) described three kinds of evidence indicating that only minor (4-10 m) olivine growth occurred following the final melting event: 1) Nearly all (>90%) type-II chondrules in CO3.0 chondrites contain low-FeO relict grains; overgrowths on these relicts are narrow, in the range of 2-12 m. 2) Most type-II chondrules contain small (10-20 m) FeO-rich olivine grains with decurved surfaces and acute angles between faces indicating that the grains are fragments from an earlier generation of chondrules; the limited overgrowth thicknesses following the last melting event are too thin to disguise the shard-like nature of these small grains. 3) Most type-II chondrules contain many small (<20 m) euhedral or subhedral phenocrysts with central compositions that are much more ferroan than the centers of the large phenocrysts; their small sizes document the small amount of growth that occurred following the final melting event.We have additional data on chondrules in Y81020 and Semarkona, and we have reinterpreted observations of Jones (1990). The striking feature of this chondrule is the large number of tiny fragments. The chondrule precursor initially consisted of crushed olivine.

Wasson, John T.↗

NASA NTRS1986

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask

A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.

Morrison, Andrew D.↗

NASA NTRS2022

A Record of Low-Temperature Asteroidal Processes of Amoeboid Olivine Aggregates from the Kainsaz Co3.2 Chondrite

Amoeboid olivine aggregates (AOAs) from the Kainsaz CO3.2 chondrite were analyzed using transmission electron microscopy in order to gain a more complete understanding of thermal metamorphism on the parent body and the role of fluids during metamorphic heating. The Kainsaz AOAs are dominated by strongly zoned, fine-grained, olivine grains (Fa2-31) with heterogeneous Fe enrichments along the grain boundaries, which are interpreted as the result of 26Fe2+-Mg2+ interdiffusion with the matrix during thermal metamorphism. However, our diffusion calculations show that such AOA olivine zoning and compositions cannot be produced by a simple diffusional exchange during metamorphic heating, unlike chondrule olivine zoning and compositions. In addition, fine-grained ferroan olivine overgrowths occur heterogeneously in crystallographic continuity with olivines on the AOA exteriors. The overgrowths (Fa33-36) are compositionally distinct from the underlying AOA olivines and are not fully equilibrated with the matrix olivines (Fa~20-55).The ferroan olivine overgrowths likely formed by precipitation from fluids in an epitaxial relationship with forsteritic olivine on the edges of AOAs. Texturally and compositionally diverse chromite grains are also observed along olivine grain boundaries, in olivine grains, and in pore spaces between olivine grains. They share a similar crystallographic orientation relationships with adjacent olivine, suggestive of their formation by exsolution and/or epitaxial growth. Collectively, these observations provide evidence for the mobilization of Fe, Mg, Si, Cr, and Al in the presence of fluids along olivine grain boundaries and into olivine grains during thermal metamorphism. We conclude that in Kainsaz AOAs, the strong zonation development in individual olivine grains and the formation of ferroan olivine overgrowths and chromite grains were a fluid-driven process that occurred at relatively low temperatures (<500°C), during the cooling history of the CO3 chondrite parent body, following the peak of thermal metamorphism.

Amoeboid olivine aggregates↗

NASA NTRS1982

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Gale, R. P.↗

NASA NTRS2004

Relict Forsterite in Chondrules: Implications for Cooling Rates

Forsterite (Fo(sub 99-100)) is often present in chondrules as relict grains that did not crystallize in situ and as isolated grains outside of chondrules; both are surrounded by ferrous overgrowths which clearly formed at a later time, probably during chondrule formation. We performed microprobe analyses across forsterite-overgrowth interfaces in 12 chondrules and 4 isolated grains in the Sahara-97210 LL3.2 (Sahara), Wells LL3.3, and Chainpur LL3.4 chondrites and modelled diffusional exchange between forsterite and overgrowths, with the goal of constraining the thermal histories during chondrule formation. The cooling rates experienced by chondrules provide an important constraint on the origin and setting of these objects.

Greeney, S.↗

NASA NTRS1986

Low energy dislocation structures in epitaxy

The principle of minimum energy was applied to epitaxial interfaces to show the interrelationship beteen misfit, overgrowth thickness and misfit dislocation spacing. The low energy dislocation configurations were presented for selected interfacial geometries. A review of the interfacial energy calculations was made and a critical assessment of the agreement between theory and experiment was presented. Modes of misfit accommodation were presented with emphasis on the distinction between kinetic effects and equilibrium conditions. Two-dimensional and three-dimensional overgrowths were treated together with interdiffusion-modified interfaces, and several models of interfacial structure were treated including the classical and the current models. The paper is concluded by indicating areas of needed investigation into interfacial structure.

Van Der Merwe, Jan H.↗

NASA NTRS1971

Mach 1 oxidation of thoriated nickel chromium at 1204 C (2200 F)

TD NiCr was exposed to a Mach 1, 1-atmosphere gas stream at 1204 C for times up to 50 hours. Weight change, metal thickness loss, X-ray diffraction, metallographic, and electron microprobe analyses were made. Neither surface preparation nor thermal cycling had an appreciable effect on the results. Initially, Cr2O3 formed and volatilized, allowing a rapid metal loss rate of 40 microns per hour. After about 1 hour the Cr2O3 broke down, resulting in an NiO overgrowth. The metal loss rate then slowed to 2.5 microns per hour and remained constant to 50 hours.

Lowell, C. E.↗

NASA NTRS1974

Effect of surface topography on structural growth of thick sputtered films

Primarily thick sputtered S-Monel, silver, and 304 stainless steel coatings were deposited on mica, glass, and metal substrates with various surface finishes to investigate the structural growth of the coating by scanning electron microscopy. Compositional changes within the coating were analyzed by X-ray dispersion microscopy. Defects in the surface finish act as preferential nucleation sites and form isolated and complex nodules and various surface overgrowths in the coating. These nodules do not disappear after full annealing. Further, they have undesirable effects on mechanial properties; cracks are initiated at the nodules when the coating is stressed by mechanical forces. These effects are illustrated by micrographs. Nodular growth within a coating can be minimized or eliminated by reducing the surface roughness.

Spalvins, T.↗

NASA NTRS1974

Surface topographical effects on the structural growth of thick sputtered metal and alloy coatings

Thick sputtered S-Monel, silver, and 304 stainless steel coatings were deposited on mica and metal substrates with various surface finishes to investigate the structural growth of the coating by scanning electron microscopy. The geometry and the surface structure of the nodules are characterized. Compositional changes within the coating were analyzed by X-ray dispersion microscopy. Defects in the surface finish (i.e., scratches, inclusions, etc.) act as preferential nucleation sites and form isolated and complex nodules and various surface overgrowths in the coating. The nodule boundaries are very vulnerable to chemical etching and these nodules do not disappear after full annealing. Further, they have undesirable effects on mechanical properties; cracks are initiated at the nodules when the coating is stressed by mechanical forces. These effects are illustrated by micrographs. Nodular growth within a coating can be minimized or eliminated by reducing the surface roughness.

Spalvins, T.↗

NASA NTRS1974

Surface topographical effects on the structural growth of thick sputtered metal and alloy coatings

Thick sputtered S-Monel, silver, and 304 stainless steel coatings were deposited on mica and metal substrates with various surface finishes to investigate the structural growth of the coating by scanning electron microscopy. The geometry and the surface structure of the nodules are characterized. Compositional changes within the coating were analyzed by X-ray dispersion miscroscopy. Defects in the surface finish act as preferential nucleation sites and form isolated and complex nodules and various surface overgrowths in the coating. The nodule boundaries are very vulnerable to chemical etching, and these nodules do not disappear after full annealing. Further, they have undesirable effects on mechanical properties; cracks are initiated at the nodules when the coating is stressed by mechanical forces.

Spalvins, T.↗

NASA NTRS1975

Morphological growth of sputtered MoS2 films

Sputtered MoS2 films from 300 A to 20,000 A thick were deposited on metal and glass surfaces. The substrate effects such as surface temperature, finish, pretreatment and chemistry as they affect the film formation characteristics were investigated by optical, electron transmission, electron diffraction, and scanning electron microscopy. Substrate temperature and surface chemistry were found to be the prime variables as to the formation of a crystalline or amorphous film. The friction characteristics are strictly influenced by the type of film formed. Surface chemistry and surface pretreatment account for compound formation and corresponding grain growth, which directly affect the adhesion characteristics, resulting in poor adherence. The type of surface finish (topography) as related to scratches, impurities, inhomogeneities, etc., are favorable nucleation sites for the growth of isolated and complex nodules within the film, and various complex surface overgrowths on the film. These nodular growth features have progressively more undesirable effects on the film behavior as the film thickness increases.

Spalvins, T.↗

NASA NTRS1974

Nodular growth in thick-sputtered metallic coatings

Thick-sputtered S-Monel, silver, and 304 stainless steel coatings were deposited on mica and metal substrates with various surface finishes to investigate the nodular growth in the coating by scanning electron microscopy. The geometry and the surface structure of the nodules are characterized. Compositional changes within the coating were analyzed by energy dispersive X-ray analysis. Defects in the surface finish (i.e., scratches, inclusions, etc.), act as preferential nucleation sites and form isolated and complex nodules and various surface overgrowths in the coating. The nodule boundaries are very vulnerable to chemical etching and these nodules do not disappear after full annealing. Further, they have undesirable effects on mechanical properties; cracks are initiated at the nodules when the coating is stressed by mechanical forces. These effects are illustrated by micrographs. Nodular growth within a coating can be minimized or eliminated by increasing the surface smoothness.

Spalvins, T.↗

NASA NTRS1975

Scanning electron microscope investigation of the structural growth in thick sputtered coatings

Sputtered S-Monel, silver, and 304 stainless steel coatings and molybdenum disulfide coatings were deposited on mica and metal substrates with various surface finishes to investigate the structural growth of the coating by scanning electron microscopy. The geometry and the surface morphology of the nodules are characterized. Compositional changes within the coating were analyzed by energy dispersive X-ray analysis. Defects in the surface finish act as preferential nucleation sites and form isolated overlapping and complex nodules and various unusual surface overgrowths on the coating. The nodule boundaries are very vulnerable to chemical etching and these nodules do not disappear after full annealing. Further, they have undesirable effects on mechanical properties; cracks are initiated at the nodules when the coating is stressed by mechanical forces.

Spalvins, T.↗

NASA NTRS1982

Metamorphism in mesosiderites

Previous studies of mesosiderites have identified a metamorphic overprint in these meteorites. However, the effects and implications of this overprint have not yet been explored in detail. The present study documents several important textural and chemical features of the mesosiderites. The components of mesosiderites are examined, taking into account orthopyroxenites, olivine in clasts, mesosiderite mafic clasts, and metal. The characteristics of the silicate matrix of the mesosiderites is explored, and textural and chemical evidence of metamorphism is discussed, giving attention to coronas on olivine clasts, overgrowths on Mg-pyroxene clasts, rims on iron rich pyroxene grains, poikiloblasts of plagioclase, and resorption of clasts. Aspects of redox formation of merrillite are considered along with the causes and the implications of metamorphism. It is found that metamorphism has radically changed the texture of the silicate fraction of the mesosiderites.

Delaney, J. S.↗

NASA NTRS1982

High efficiency, low cost thin GaAs solar cells

The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.

Fan, J. C. C.↗

NASA NTRS1989

Growth and characterization of single crystal insulators on silicon

An overview of the growth and characterization of epitaxial insulators on semiconductors is presented. The potential applications include semiconductor-on-insulator structures, three-dimensional and/or high-density integrated circuits, optoelectronic applications such as integrated waveguides and improved gate insulators. The growth and physical characterization of epitaxial fluorides on semiconductors are discussed. Consideration is also given to the epitaxial overgrowth of epitaxial metal layers with CaF2 as well as to the formation of a novel superlattice of Ca particles in epitaxial CaF2.

Schowalter, Leo J.↗

NASA NTRS1991

Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

Xing, G. C.↗