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True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching
This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (~95% dynamic BV). Recoverable device parametric shifts are observed after the 1-million pulses, featuring small reductions in threshold voltage and on-resistance. These shifts are different from the ones after the hard-switching pulses without overvoltage and are attributable to the trapping of the holes produced in impact ionization. Furthermore, these results suggest that the BV and overvoltage margin of GaN HEMTs in practical power switching can be significantly underestimated using the static BV. Index Terms— GaN, HEMT, power electronics, hard switching, breakdown voltage, overvoltage, ruggedness, reliability.
Modeling and Mitigation of Multi-Loops Related Device Overvoltage in Three Level Active Neutral Point Clamped Converter
This paper establishes an analytical model for the device drain-source overvoltage related to the two loops in three level active neutral point clamped (3L-ANPC) converters. Taking into account the non-linear device output capacitance, two commonly used modulations are investigated in detail. The result shows that the line switching frequency device usually has higher overvoltage, and the switching speed of the high switching frequency device is not strongly influenced by the multiple loops. By keeping the non-active clamping switch off, the effect of the non-linear device output capacitance can be significantly mitigated, which helps reduce the overvoltage. Moreover, the loop inductance can be reduced with vertical loop layout and magnetic cancellation in PCB and busbar design. A 500 kVA 3L-ANPC converter using SiC MOSFETs is built and tested. The experimental results validate the overvoltage model of the two modulations as well as the busbar design. With the non-active clamping switch off, the overvoltage of both the high and line switching frequency devices is significantly reduced, which helps achieve higher switching speed.
A Fast-Response High-Accuracy Overvoltage Protection Circuit for Soft-Switching Current-Source Converters
Although voltage-source converters (VSCs) have been a focus of research for decades and are widely applied in numerous applications, they face great challenges in short-circuit failures, high dv/dt and electromagnetic interference (EMI), especially using wide bandgap devices. Instead, current-source converters (CSCs) are attracting increasing attention in recent years owing to their friendliness to short-circuit faults, improved EMI, etc. For CSCs, overvoltage is the most catastrophic failure since the semiconductor devices can hardly withstand an overvoltage for a short pulse. In this paper, a fast-response high-accuracy overvoltage protection (OVP) circuit is proposed to protect CSCs from overvoltage damage. It also features a small form factor, good noise-immunity, friendly retrofit capability, and no need for active switches. In this paper, the operating principle and design guideline of the proposed OVP circuit is introduced. Its effectiveness is validated in soft-switching solid-state transformer (S4T) at 500 V. In experiments, the voltage detection error of less than 5% and a propagation delay of fewer than 400 ns have been achieved.
A Flexible and Secure Evaluation Platform for Overvoltage Protection in Power Electronics Systems
This paper summarizes the fault mechanisms specifically for the overvoltage protection schemes in power electronic converters and the resulted power electronics enabled systems. A flexible and secure evaluation platform for overvoltage protection, has also been presented based on this conceptual mechanism. The proposed platform aims at testing the protection performance of distinctive overvoltage protection schemes. It would be applied to verify the effectiveness, identify potential strengths and weaknesses, and obtain the most critical protection response time to provide sufficient engineering insights for the designer. The operation principle and detailed design guideline have been presented first. The comprehensive component stress has been analyzed. An intensive set of LTSpice simulations have been conducted to show the validity of the proposed assessment approach.
Overvoltage protection network
Electrical equipment to be protected from overvoltage is connected with a possible source of overvoltage via an input conductor. A fuse is connected in series with the input conductor. A spark gap is connected between the input conductor and ground for conducting the overvoltage current to ground and for blowing the fuse to open the circuit to the electrical equipment. A pulse attenuator network is provided between the spark gap and the electrical equipment to be protected for attenuating the pulse of energy passing through the fuse and spark gap prior to blowing of the fuse. The pulse attenuator network includes additional shunt spark gaps, series inductance, and a series connection of a twisted shielded pair of conductors having low-voltage insulation.
Modeling of Multi-Loops Related Device Turn-On Overvoltage in 3L-ANPC Converters
The analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.
Overvoltage Prevention and Curtailment Reduction Using Adaptive Droop-Based Supplementary Control in Smart Inverters
Recent developments in the renewable energy sector have seen an unprecedented growth in residential photovoltaic (PV) installations. However, high PV penetration levels often lead to overvoltage problems in low-voltage (LV) distribution feeders. Smart inverter control such as active power curtailment (APC)-based overvoltage control can be implemented to overcome these challenges. The APC technique utilizes a constant droop-based approach which curtails power rigidly, which can lead to significant energy curtailment in the LV distribution feeders. In this paper, different variations of the APC technique with linear, quadratic, and exponential droops have been analyzed from the point-of-view of energy curtailment for a LV distribution network in North America. Further, a combinatorial approach using various droop-based APC methods in conjunction with adaptive dynamic programming (ADP) as a supplementary control scheme has also been proposed. The proposed approach minimizes energy curtailment in the LV distribution network by adjusting the droop gains. Simulation results depict that ADP in conjunction with exponential droop reduces the energy curtailment to approximately 50% compared to using the standard linear droop.
Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs
An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.
Trisphere spark gap actuates overvoltage relay
Trisphere spark gap and high voltage relay provides a positive, fast response, high current capacity device that will sense an overvoltage condition and remove power from the circuit before insulation breakdown. When an overvoltage occurs, the spark gap breaks down and conducts an actuating current to the relay which removes power from the circuit.
Response of tantalum capacitors to fast transient overvoltages
Report describes tests used to determine minimum time for capacitors to fail due to overvoltage and maximum amount of overvoltage that capacitors could sustain without permanent damage.
Hollow plasma structure during the breakdown phase of nanosecond pulsed pin–pin discharges generated with overvoltage
Atmospheric pressure nanosecond repetitive pulsed discharges are of interest for applications in combustion, material processing, plasma medicine and gas treatment. Here, the observation of a hollow structure at the ignition stage of such discharge in a pin–pin geometry is reported. Plasma images show that the phenomenon occurs in a variety of gases (helium, humid helium, argon and air) suggesting that it is in first approximation non-species specific. The phenomenon is investigated in detail in pure helium discharges for peak applied voltages between 3 and 6 kV and 200 ns voltage pulse duration by performing time-resolved optical emission spectroscopy measurements of electron density, gas temperature and electric field. All the measurements were performed at the mid-gap during the early stages of the discharge, near the breakdown. The transition from a homogeneous filament to a hollow structure occurs between 4 and 5 kV in helium. Electron density measurements by Stark broadening of the He I line at 492.2 nm show no significant difference in electron densities for the applied voltage between 3 and 6 kV. In all cases, a maximum electron density of about 3.5 × 10 21 m –3 was found. Electric field measurements performed by Stark polarization spectroscopy of the He I transition at 492.2 nm and of its forbidden counterpart show electric field strengths higher than the DC breakdown field of helium at atmospheric pressure consistent with the generation of the discharges with overvoltage. Moreover, a correlation between electric field values and the appearance of the hollow structure is observed and, remarkably, the phenomenon is not sensitive to the pre-ionization level (memory effect). Possible mechanisms for the phenomenon are discussed.
Alternative 3V0 Development for Ground Fault Overvoltage Protection with DERs/Renewables Interconnection (Final Report)
The ground fault overvoltage (GFOV) and the required traditional 3V0 installation has become a concerned issue for renewable/DER integration. Based on the alternative 3V0 methodology proposed by the PI and the feasibility study awarded by DOE SBIR/STIR project (Award No. DE-SC0018888), APS and RPI investigated development of a low-cost alternative 3V0 product based on the surge arrester current monitoring. The alternative 3V0 feasibility study completed by APS and RPI has verified that the alternative 3V0 is an effective solution (possibly the only one) under various circuit conditions and is competitive to traditional 3V0 methods.
Tantalum capacitor behavior under fast transient overvoltages
Tantalum capacitors were tested to determine failure time when subjected to short-duration, high-voltage surges caused by lightning strikes. Lightning is of concern to NASA because of possible damage to critical spacecraft circuits. The test was designed to determine the minimum time for tantalum capacitor failure and the amount of overvoltage a capacitor could survive, without permanent damage, in 100 microseconds. All tested exhibited good recovery from the transient one-shot pulses with no failure at any voltage, forward or reverse, in less than 25 microseconds.
Effect of silicate ions on electrode overvoltage
The influence of the addition of a silicate to a caustic solution (KOH) is studied in order to determine the degree to which silicates inhibit the corrosion of chrysotile under conditions of electrolysis at working temperatures of 100 C and above. In an alkaline solution containing various silicate concentrations, current density was increased and electrode overvoltage was measured. Results show that silicate ion concentrations in the electrolyte increase with temperature without effecting electrochemical performance up to 115 C at 700 MA/sqcm. At this point the concentration is about 0.5 g Si/100 g KOH. Beyond this limit, electrolytic performance rapidly degenerates due to severe oxidation of the electrodes.
The cause of sub-cycle overvoltage: Capacitive characteristics of solar PVs
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Resolving Sub-Cycle Overvoltage Issue in Solar and Type-4 Wind Farms Employing Low Voltage Ride Through
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Overvoltage Suppression and Energy Balancing for Sequential Tripping of Hybrid DC Circuit Breakers
Not provided.