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At least 19 records

Corrosion of oxygen-doped tantalum by lithium

The increase in the penetration of tantalum by liquid lithium with increasing oxygen content of tantalum results from the ability of lithium to extract oxygen from tantalum oxides and/or from regions of high oxygen concentrations, accompanied by the creation of minute channels. At low oxygen concentration, oxides are present primarily at the grain boundaries and the lithium penetration is primarily intergranular. At high oxygen concentration, oxides and/or regions of high oxygen concentration are present both at the grain boundaries and within the grains; lithium penetration is both intergranular and transgranular. For a specific oxygen concentration, the severity of corrosion decreases with increasing temperature because (1) the oxygen solubility increases with temperature, decreasing the number of oxide particles and/or regions of high oxygen concentration, and (2) the diffusivity of oxygen in tantalum increases, allowing more rapid oxygen removal at the tantalum lithium interface.

Stecura, S.↗

Feasibility study of oxygen-dispensing emitters for thermionic converters, phase 1

A metal/ceramic Marchuk tube was used to measure work functions of oxygen-doped tantalum, to determine applicability of the material to plasma-mode thermionic converters. Oxygen-doped tantalum was shown to increase in work function monotonically with oxygen doping in the range 0.1 to 0.3 atomic percent. Oxygenated test emitters were run at an average temperature of 2165 K and a T/T sub Cs ratio -5.8 to observe the influence of oxygen depletion. Bare work function decreased with outgassing of oxygen. Projections were made based on outgassing kinetics and area/volume ratios to calculate the longevity of oxygen doping in a practical converter. Calculations indicated that the program goal of 10,000 hr could be achieved at 1800 K with an initial oxygen doping of 1 atomic percent and a practical emitter area/volume ratio.

Desteese, J. G.↗

Identification of oxygen-related midgap level in GaAs

An oxygen-related deep level ELO was identified in GaAs employing Bridgman-grown crystals with controlled oxygen doping. The activation energy of ELO is almost the same as that of the dominant midgap level: EL2. This fact impedes the identification of ELO by standard deep level transient spectroscopy. However, it was found that the electron capture cross section of ELO is about four times greater than that of EL2. This characteristic served as the basis for the separation and quantitative investigation of ELO employing detailed capacitance transient measurements in conjunction with reference measurements on crystals grown without oxygen doping and containing only EL2.

Lagowski, J.↗

Surface Tensions and Their Variations with Temperature and Impurities

The surface tensions in this work were determined using the sessile drop technique. This method is based on a comparison of the profile of a liquid drop with the profile calculated by solving the Young-Laplace equation. The comparison can be made in several ways; the traditional Bashforth-Adams procedure was used in conjunction with recently calculated drop shape tables which virtually eliminate interpolation errors. Although previous study has found little difference in measurements with pure and oxygen doped silicon, there is other evidence suggesting that oxygen in dilute concentrations severely depresses the surface tension of silicon. The surface tension of liquid silicon in purified argon atmospheres was measured. A temperature coefficient near -0.28 mJ/square meters K was found. The experiments show a high sensitivity of the surface tension to what is believed are low concentrations of oxygen. Thus one cannot rule out some effect of low levels of oxygen in the results. However, the highest surface tension values obtained in conditions which minimized the residual oxygen pressure are in good agreement with a previous measurement in pure hydrogen. Therefore, depression of the surface tension by oxygen is insignificant in these measurements.

Hardy, S. C.↗

Addition of oxygen to and distribution of oxides in tantalum alloy T-111 at low concentrations

Oxygen was added at 820 and 990 C at an oxygen pressure of about .0003 torr. The technique permitted predetermined and reproducible oxygen doping of the tantalum alloy (T-111). Based on the temperature dependency of the doping reaction, it was concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the tantalum and tungsten oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and oxygen from other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C but not at 820 C. The vaporization of WO3 has no apparent effect on the doping reaction.

Stecura, S.↗

Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels

A high-resolution optical study was carried out on GaAs crystals grown by horizontal Bridgman and liquid-encapsulated-Czochralski methods. An excellent correlation was found between the intensity of the 1.039-eV no-phonon line and the characteristic absorption of EL2, the major deep donor level in GaAs. A correlation was also found between the characteristic optical absorption of EL2 and its concentration as determined by junction capacitance measurements. The presence of EL0, another midgap level contained in heavily oxygen-doped crystals at concentration always less than those of EL2, had no effect on the optical spectra, but altered the capacitance measurements. Accordingly, an accurate calibration for the determination of EL2 by optical absorption was obtained from capacitance measurements on crystals containing only EL2; in this way the uncertainties introduced by other midgap levels were eliminated.

Skowronski, M.↗

Growth and characterization of high-performance photorefractive BaTiO3 crystals

Barium titanate has been used for many nonlinear optical applications primarily because it has high grain and high self-pumped phase conjugate reflectivities. However, barium titanate has had a relatively slow response time, and thus low sensitivity. Therefore, it has not been suited to real-time operations. In this report we will describe the modifications in crystal growth, doping, reduction, and poling that have produced barium titanate crystals with the fastest photorefractive response time reported to date, approximately 21 microseconds with a beam-coupling gain coefficient of 38.7 cm(exp -1) and the highest sensitivity reported to date of 3.44 cm(exp 3)/kJ. The sensitivity of these barium titanate crystals is comparable to or greater than other photorefractive oxides. We will show, for the first time, beam-coupling in barium titanate at video frame rates. We infer from response time measurements that barium titanate has a phonon limited mobility. Also, photorefractive response time measurements as a function of the crystallographic orientation and grating wave vector for our cobalt-doped oxygen reduced crystals indicate that their faster response time arise because of an increase in the free carrier lifetime.

Warde, C.↗

Electronic Structure of Tl2Ba2CuO(6+Delta) Epitaxial Films Measured by X-Ray Photoemission

The valence electronic structure and core levels of Tl2Ba2CuO(6 + delta) (Tl-2201) epitaxial films have been measured with X-ray photoelectron spectroscopy and are compared to those of Tl2Ba2CaCu2O(8 + delta) (Tl-2212). Changes in the Tl-2201 core-level binding energies with oxygen doping are consistent with a change in the chemical potential. Differences between the Tl-2201 and Tl-2212 measured densities of states are consistent with the calculated Cu 3d and Tl 6s partial densities of states.

Vasquez, R. P.↗

Investigation of the formation of gaseous sodium sulfate in a doped methane-oxygen flame

Na2SO4(g) formation was measured at atmospheric pressure in CH4-O2 flames, with high pressure, free-jet expansion, mass spectrometric sampling used to identify and measure reaction products. Measured composition profiles of reaction products for a doped 9.5 mole ratio O2/CH4 flame are presented. Weight percentages of reactants were 4.7 CH4, 89.0 O2, 3.5 H2O, 2.0 SO2 and 0.35 NaCl.

Stearns, C. A.↗

IR-doped ruthenium oxide catalyst for oxygen evolution

A method for preparing a metal-doped ruthenium oxide material by heating a mixture of a doping metal and a source of ruthenium under an inert atmosphere. In some embodiments, the doping metal is in the form of iridium black or lead powder, and the source of ruthenium is a powdered ruthenium oxide. An iridium-doped or lead-doped ruthenium oxide material can perform as an oxygen evolution catalyst and can be fabricated into electrodes for electrolysis cells.

Valdez, Thomas I.↗

Doping directed at the oxygen sites in Y1Ba2Cu3O(7-delta) - The effect of sulfur, fluorine, and chlorine

The effect of three dopants directed at the oxygen sites in Y1Ba2Cu3O(7-delta) have been investigated: sulfur, fluorine, and chlorine. Single-phase material has been obtained up to a (nominal) replacement of about 1 percent of the oxygen. Although the lattice parameters are unchanged, all dopants raise Tc (very slightly), sharpen the resistive transition, reduce the normal state resistivity, and very substantially increase the (magnetically determined) fraction of the material that is superconducting. All of these results differ qualitatively from those obtained with dopants directed at other locations in the 123 structure, and it is suggested that small additions of sulfur, fluorine, or chlorine may help to stabilize the ideal 123 stoichiometry.

Bansal, N. P.↗

Formation of Na2SO4 and K2SO4 in flames doped with sulfur and alkali chlorides and carbonates

High pressure, free-jet expansion, mass spectrometric sampling was used to identify directly and to measure reaction products formed in doped methane-oxygen flames. Flames were doped with SO2 or CH3SH and sodium or potassium chlorides or carbonates. Gaseous NA2SO4 or K2S04 molecules were formed in residence times on the order of msec for each combination of dopants used. Composition profiles of combustion products were measured and compared with equilibrium thermodynamic calculations of product composition.

Fryburg, G. C.↗