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Results for “oxygen interstitials”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Depletion of interstitial oxygen in silicon and the thermal donor model

It is shown here that the experimental results of Newman (1985) and Tan et al. (1986) regarding the loss of oxygen interstitials during 450 C annealing of Czochralski silicon are consistent with the recently proposed model of Borenstein, Peak, and Corbett (1986) for thermal donor formation. Calculations were carried out for TD cores corresponding to O2, O3, O4, and/or O5 clusters. A simple model which attempts to capture the essential physics of the interstitial depletion has been constructed, and is briefly described.

Borenstein, Jeffrey T.↗
NASA NTRS2005

Energetics of Oxygen Interstitials in Cr and V

Dissolved oxygen in group IIIA-VA (Nb, Ti, Zr, Y) based alloys is a fundamental problem, affecting both mechanical properties and oxidation resistance, yet details of the phenomenon are poorly understood. In these alloys, oxygen is more stable dissolved in the metal than as an oxide-compound. In contrast, alloys based on Ni, Fe, Al and Cr exhibit almost no oxygen solubility. To improve the performance of Nb and Ti based alloys it is necessary to understand the differences in oxygen solubility between these two groups of metals. As a first step we considered the energetics of interstitial oxygen in alpha-V and alpha-Cr. Both of these metals have a BCC structure, yet the oxygen solubility in V is much higher than that in Cr. We obtain total energies, densities of states and population analyses using the CASTEP plane-wave pseudopotential density functional computer code. The differences in the energetics and electronic structures of the two materials, particularly the partial densities of states associated with the interstitial oxygen, are discussed.

Good, Brian S.↗
DOE OSTI2024

Computational discovery of fast interstitial oxygen conductors

New highly oxygen-active materials may enhance many energy-related technologies by enabling efficient oxygen-ion transport at lower temperatures, for example, below ~400 °C. Interstitial oxygen conductors have the potential to realize such performance but have received far less attention than vacancy-mediated conductors. Here, in this study, we combine physically motivated structure and property descriptors, ab initio simulations and experiments to demonstrate an approach to discover new fast interstitial oxygen conductors. Multiple new families were found, which adopt completely different structures from known oxygen conductors. From these families, we synthesized and studied oxygen kinetics in La 4 Mn 5 Si 4 O 22+δ , a representative member of the perrierite/chevkinite family. We found that La 4 Mn 5 Si 4 O 22+δ has higher oxygen-ion conductivity than the widely used yttria-stabilized ZrO 2 , and among the highest surface oxygen exchange rates at the intermediate temperature of known materials. The fast oxygen kinetics is the result of simultaneously active interstitial and interstitialcy diffusion pathways. We propose that the essential features for forming an effective interstitial oxygen conductor are the availability of electrons and structural flexibility, enabling a sufficient accessible volume. This work provides a powerful approach for understanding and discovering new interstitial oxygen conductors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Understanding and design of interstitial oxygen conductors

Highly efficient oxygen-active materials that react with, absorb, and transport oxygen is essential for fuel cells, electrolyzers and related applications. While vacancy-mediated oxygen-ion conductors have long been the focus of research, they are limited by high migration barriers at intermediate temperatures (400–600 °C), which hinder their practical applications. In contrast, interstitial oxygen conductors exhibit significantly lower migration barriers enabling higher ionic conductivity at lower temperatures. This review systematically examines both well-established and recently identified families of interstitial oxygen-ion conductors, focusing on how their unique structural motifs such as corner-sharing polyhedral frameworks, isolated polyhedral, and cage-like architectures, facilitate low migration barriers through interstitial and/or interstitialcy diffusion mechanisms. A central discussion of this review focuses on the evolution of design strategies, from targeted donor doping, element screening, to physical-intuition descriptor material screening and machine learning approach, which leverage computational tools to explore vast chemical spaces in search for new interstitial conductors. The success of these strategies demonstrates that a significant, largely unexplored space remains for discovering high-performing interstitial oxygen conductors. Crucial features enabling high-performance interstitial oxygen diffusion include the availability of electrons for oxygen reduction and sufficient structural flexibility with accessible volume for interstitial accommodation and migration. This review concludes with a forward-looking perspective, proposing a knowledge-driven methodology that integrates current understanding with data-centric approaches to identify promising interstitial oxygen conductors outside traditional search paradigms. These approaches are expected to significantly accelerate the development of high-performance interstitial oxygen conductors for a variety of oxygen-active applications, ultimately paving the way for more efficient and sustainable energy technologies.

Interstitial oxygen conductors↗
DOE OSTI2024

Methods of controllable interstitial oxygen doping in niobium

A method for vacuum heat treating Nb, such as is used in superconducting radio frequency cavities, to engineer the interstitial oxygen profile with depth into the surface to conveniently optimize the low-temperature rf surface resistance of the material. An example application is heating of 1.3 GHz accelerating structures between 250-400° C. to achieve a very high quality factor of 5×1010 at 2.0 K. With data supplied by secondary ion mass spectrometry measurements, application of oxide decomposition and oxygen diffusion theory was applied to quantify previously unknown parameters crucial in achieving the oxygen alloy concentration profiles required to optimize the rf surface resistance. RF measurements of vacuum heat treated Nb superconducting radio frequency cavities confirmed the minimized surface resistance (higher Q0) previously expected only from 800° C. diffusive alloying with nitrogen.

Palczewski, Ari D.↗
DOE OSTI2026

Impact of nitrogen and oxygen interstitials on niobium SRF cavity performance

Superconducting radio frequency (SRF) cavities are the leading technology for highly efficient particle acceleration, and their performance can be significantly enhanced through the controlled introduction of interstitial impurities into bulk niobium. Nitrogen doping has demonstrated a substantial reduction in surface resistance, which improves the quality factor of the cavities. More recently, oxygen doping has emerged as a promising alternative, demonstrating comparable reductions in surface resistance. In this study, we combine cavity measurements on 1.3 GHz niobium SRF cavities subjected to a range of nitrogen- and oxygen-based treatments with material characterizations performed on cavity cutouts processed under identical conditions. This approach allows us to quantitatively assess the contribution of each impurity to the reduction of surface resistance. We find that nitrogen is ten times more effective than oxygen in reducing surface resistance at 16 MV/m. We also observe an additive effect of O and N impurities in reducing RT. We discuss these results in the context of field-dependent nonequilibrium superconductivity, gap enhancement, and hydrogen trapping mechanisms.

Hu, H. [Chicago U.; Fermilab] (ORCID:0009000330621↗
DOE OSTI2026

Effects of interstitial oxygen on ω transformations and twin formation in bcc NbTaTiHf multi-principal element alloy from first-principles

Transformation- and twinning-induced plasticity (TRIP and TWIP) have been reported to contribute to the low-temperature deformation of some body-centered cubic (bcc) multi-principal element alloys (MPEAs) containing large fractions of group IV transition metals. The influence of interstitial solutes on the mechanisms underlying these forms of plasticity, however, remains unclear. Using first-principles calculations, we study the effects of interstitial O atoms on the relative stability of bcc and ω phases and on unstable and twin boundary stacking fault energy profiles in a representative bcc MPEA with high group-IV elemental fraction: NbTaTiHf. We find that O additions generally promote the relaxation of ω configurations back to their parent bcc structure, therefore inhibiting ω transformation. Calculations of the Rice parameter for bulk bcc and phases, as well as bcc-ω interfaces, further show that ω formation is a potent embrittlement factor, an effect that is enhanced by O additions, suggesting that the formation of bcc-ω interfaces is energetically preferred over the formation of the bulk ω phase. By contrast, the Rice parameter for twin boundaries indicates that these interfaces do not embrittle the material, even with O atoms at twin boundaries, providing a more favorable pathway for plastic deformation compared to ω transformation.

Density functional theory↗
NASA NTRS1987

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Stupica, John↗
DOE OSTI2025

Insights into oxygen diffusion in rare earth disilicate environmental barrier coatings

Environmental barrier coatings (EBC) are crucial for the use of SiC-based ceramic matrix composites in high-temperature combustion environments, yet knowledge of oxygen diffusion in these coatings is limited. This study investigates oxygen diffusion dynamics in the β-RE 2 Si 2 O 7 system to minimize oxygen penetration in rare earth disilicates. We analyze defect formation energy under varying oxygen conditions, identifying key diffusion mechanisms. In oxygen-rich environments, the most favorable neutral interstitial oxygen diffuses along the [110] direction. In oxygen-poor conditions, neutral oxygen vacancies rotate around Y and Si atoms, exhibiting a diffusivity of 6.59×10 −22 m 2 /s at 1500 K for β-Yb 2 Si 2 O 7 . Under intermediate oxygen levels, charged interstitial oxygen diffuses via concerted interstitialcy along the [001] direction with a diffusivity of 6.21×10 −17 m 2 /s. Additionally, alloying rare earth Y with Er and Yb increases diffusion barriers, contributing to improved EBC performance in extreme environments. The insights gained provides valuable guidance for designing robust coatings tailored to withstand extreme operational environments.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Understanding the Role of Extrinsic Impurities in Bulk Nb SRF Cavities

High gradient and high quality factor superconducting radiofrequency (SRF) cavities are essential for efficient particle acceleration in next-generation accelerators. This work demonstrates that the superconducting performance of bulk niobium can be enhanced through a controlled introduction of interstitial oxygen and nitrogen. Thermal and chemical surface treatments modify the concentration and distribution of these impurities, enabling systematic tuning of SRF cavity performance. By combining cavity RF measurements with quantitative materials characterizations, we isolate the impact of impurity concentration on BCS surface resistance and identify the mechanisms by which interstitial impurities alter the superconducting properties of niobium. We find that nitrogen is an order of magnitude more effective than oxygen in reducing BCS resistance at 16 MV/m and that the reduction arises from a combination of mean free path optimization and superconducting gap enhancement. Using these insights, we develop a predictive model that estimates cavity performance directly from room temperature sample material studies, reducing the reliance on full-scale cryogenic tests for surface treatment development. We then apply this model to explore co-doping strategies, demonstrating that combining interstitial oxygen and nitrogen achieves a synergistic reduction in BCS resistance. These results establish co-doping as a viable path for the development of surface-engineered niobium for future high quality factor SRF applications.

Hu, Hannah [Chicago U.]↗
NASA NTRS2015

Kinetic Monte Carlo Simulation of Oxygen Diffusion in Ytterbium Disilicate

Ytterbium disilicate is of interest as a potential environmental barrier coating for aerospace applications, notably for use in next generation jet turbine engines. In such applications, the transport of oxygen and water vapor through these coatings to the ceramic substrate is undesirable if high temperature oxidation is to be avoided. In an effort to understand the diffusion process in these materials, we have performed kinetic Monte Carlo simulations of vacancy-mediated and interstitial oxygen diffusion in Ytterbium disilicate. Oxygen vacancy and interstitial site energies, vacancy and interstitial formation energies, and migration barrier energies were computed using Density Functional Theory. We have found that, in the case of vacancy-mediated diffusion, many potential diffusion paths involve large barrier energies, but some paths have barrier energies smaller than one electron volt. However, computed vacancy formation energies suggest that the intrinsic vacancy concentration is small. In the case of interstitial diffusion, migration barrier energies are typically around one electron volt, but the interstitial defect formation energies are positive, with the result that the disilicate is unlikely to exhibit experience significant oxygen permeability except at very high temperature.

Coatings↗
NASA NTRS1982

Microdistribution of oxygen in silicon and its effects on electronic properties

The effects of interstitial oxygen on the electrical characteristics of Czochralski-grown silicon crystals were investigated for the first time on a microscale. It was found that the generation of thermal donors is not a direct function of the oxygen concentration. It was further found that the minority carrier life-time decreases with increasing oxygen concentration, on a microscale in as-grown crystals. It was thus shown, again for the first time, that oxygen in as grown crystals is not electronically inert as generally believed. Preannealing at 1200 C commonly employed in device fabrication, was found to suppress the donor generation at 450 C and to decrease the deep level concentrations.

Gatos, H. C.↗
NASA NTRS1983

Oxygen-induced recombination centers in as-grown Czochralski silicon crystals

Simultaneous quantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime are obtained in Czochralski-grown Si crystals employing double laser absorption scanning. It is found that oxygen concentration maxima and minima along the crystal growth direction coincide with lifetime minima and maxima, respectively. Another finding is that the magnitude of oxygen-induced lifetime changes increases dramatically in going from the center to the periphery of the crystal. The findings discussed imply that 'as-grown' oxygen precipitates figure in lifetime-limiting processes.

Nauka, K.↗
NASA NTRS1987

Oxygen measurements in thin ribbon silicon

The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification of the ASTM method based on Fourier transform infrared spectroscopy. Web silicon was found to have a high oxygen content, ranging from 13 to 19 ppma, calculated from the absorption peak associated with interstitial oxygen and using the new ASTM conversion coefficient. The oxygen concentration changed by about 10 percent along the growth direction of the ribbon. In some samples, a shoulder was detected on the absorption peak. A similar shoulder in Czochralski grown material has been variously interpreted in the literature as due to a complex of silicon, oxygen, and vacancies, or to a phase of SiO2 developed along dislocations in the material. In the case of web silicon, it is not clear which is the correct interpretation.

Hyland, S. L.↗
NASA NTRS2005

Neutron Diffraction Study Oxygen Dissolution Alpha(sub 2)-Ti3Al

Rietveld refinements of neutron powder diffraction data on alpha(sub 2)-Ti3Al have been performed to determine the crystal structure as a function of interstitial oxygen (O) concentration for three alloys with a Ti/Al ratio of approximately equal to 2.34 and O concentrations of 0.25%, 3.99% and 7.71%. The structures of the allows are hexagonal in space group P6(sub 3)/mmc where Ti and Al atoms populate unique sites with excess Al at the Ti site and O atoms occupy octahedral interstitial sites surrounded by six Ti sites. The length of the c-axis was found to increase linearly as the O occupancy of the interstitial sites increased; this lattice lengthening effect was much less pronounced along the alpha axis. Correspondingly, the increases in the lengths of Ti-Al and Ti-Ti bonds with a major component of their direction parallel to the c-axis were roughly an order of magnitude greater than the increases in the lengths of Ti-al and Ti-Ti bonds more closely aligned with the alpha-axis. Densities calculated form the lattice parameters and occupancy factors fall in the range (4.118 plus or minus 0.004) grams per cubic centimeter to (4.194 plus or minus 0.004) grams per cubic centimeter, and exhibit a nearly linear increase with oxygen concentration. Measured densities of (4.113 plus or minus 0.001) grams per cubic centimeter, (4.146 plus or minus 0.009) grams per cubic centimeter, and (4.191 plus or minus 0.002) grams per cubic centimeter for these alloys agree with the results of the refinements.

Jones, Camille Y.↗
NASA NTRS1985

Oxygen and carbon in silicon

The properties of the early transistors were determined by the minority-carrier lifetime, as is the silicon photovoltaic solar cell. Most of the devices on the modern integrated circuits are majority carrier devices, in part to avoid this lifetime dependence. The micro-electronics industry typically starts with wafers with a minority-carrier lifetime of 1000 micro-seconds, but during device fabrication this lifetime is reduced to beflow 1 micro-second, in spite of extraordinary cleanliness and precautions. Process-induced defects (PID) include point defects, defect complexes, line defects, and bulk precipitates. One of the aspects that needs to be better understood is the nature of minority carrier recombination at line defects and at precipitates. Some of the PIDs are known to be related to the fast-diffusers of the iron-series transition elements. One of the common techniques of dealing with these elements is intrinsic gettering by the oxygen precipitates. But even in the gettered state, there may be a residual effect on the lifetime. Oxygen is an almost ubiquitous impurity in silicon and plays an important role in both integrated circuits and solar cells. The isolated oxygen interstitial is electrically inactive, but in its various aggregated forms it has a variety of electrical activities. The agglomeration and precipitation of oxygen, including impurity gettering and the complicating role of carbon, is discussed.

Corbett, J. W.↗