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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Depletion of interstitial oxygen in silicon and the thermal donor model

It is shown here that the experimental results of Newman (1985) and Tan et al. (1986) regarding the loss of oxygen interstitials during 450 C annealing of Czochralski silicon are consistent with the recently proposed model of Borenstein, Peak, and Corbett (1986) for thermal donor formation. Calculations were carried out for TD cores corresponding to O2, O3, O4, and/or O5 clusters. A simple model which attempts to capture the essential physics of the interstitial depletion has been constructed, and is briefly described.

Borenstein, Jeffrey T.↗
NASA NTRS2005

Energetics of Oxygen Interstitials in Cr and V

Dissolved oxygen in group IIIA-VA (Nb, Ti, Zr, Y) based alloys is a fundamental problem, affecting both mechanical properties and oxidation resistance, yet details of the phenomenon are poorly understood. In these alloys, oxygen is more stable dissolved in the metal than as an oxide-compound. In contrast, alloys based on Ni, Fe, Al and Cr exhibit almost no oxygen solubility. To improve the performance of Nb and Ti based alloys it is necessary to understand the differences in oxygen solubility between these two groups of metals. As a first step we considered the energetics of interstitial oxygen in alpha-V and alpha-Cr. Both of these metals have a BCC structure, yet the oxygen solubility in V is much higher than that in Cr. We obtain total energies, densities of states and population analyses using the CASTEP plane-wave pseudopotential density functional computer code. The differences in the energetics and electronic structures of the two materials, particularly the partial densities of states associated with the interstitial oxygen, are discussed.

Good, Brian S.↗
NASA NTRS1987

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Stupica, John↗
NASA NTRS2015

Kinetic Monte Carlo Simulation of Oxygen Diffusion in Ytterbium Disilicate

Ytterbium disilicate is of interest as a potential environmental barrier coating for aerospace applications, notably for use in next generation jet turbine engines. In such applications, the transport of oxygen and water vapor through these coatings to the ceramic substrate is undesirable if high temperature oxidation is to be avoided. In an effort to understand the diffusion process in these materials, we have performed kinetic Monte Carlo simulations of vacancy-mediated and interstitial oxygen diffusion in Ytterbium disilicate. Oxygen vacancy and interstitial site energies, vacancy and interstitial formation energies, and migration barrier energies were computed using Density Functional Theory. We have found that, in the case of vacancy-mediated diffusion, many potential diffusion paths involve large barrier energies, but some paths have barrier energies smaller than one electron volt. However, computed vacancy formation energies suggest that the intrinsic vacancy concentration is small. In the case of interstitial diffusion, migration barrier energies are typically around one electron volt, but the interstitial defect formation energies are positive, with the result that the disilicate is unlikely to exhibit experience significant oxygen permeability except at very high temperature.

Coatings↗
NASA NTRS1982

Microdistribution of oxygen in silicon and its effects on electronic properties

The effects of interstitial oxygen on the electrical characteristics of Czochralski-grown silicon crystals were investigated for the first time on a microscale. It was found that the generation of thermal donors is not a direct function of the oxygen concentration. It was further found that the minority carrier life-time decreases with increasing oxygen concentration, on a microscale in as-grown crystals. It was thus shown, again for the first time, that oxygen in as grown crystals is not electronically inert as generally believed. Preannealing at 1200 C commonly employed in device fabrication, was found to suppress the donor generation at 450 C and to decrease the deep level concentrations.

Gatos, H. C.↗
NASA NTRS1983

Oxygen-induced recombination centers in as-grown Czochralski silicon crystals

Simultaneous quantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime are obtained in Czochralski-grown Si crystals employing double laser absorption scanning. It is found that oxygen concentration maxima and minima along the crystal growth direction coincide with lifetime minima and maxima, respectively. Another finding is that the magnitude of oxygen-induced lifetime changes increases dramatically in going from the center to the periphery of the crystal. The findings discussed imply that 'as-grown' oxygen precipitates figure in lifetime-limiting processes.

Nauka, K.↗
NASA NTRS1987

Oxygen measurements in thin ribbon silicon

The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification of the ASTM method based on Fourier transform infrared spectroscopy. Web silicon was found to have a high oxygen content, ranging from 13 to 19 ppma, calculated from the absorption peak associated with interstitial oxygen and using the new ASTM conversion coefficient. The oxygen concentration changed by about 10 percent along the growth direction of the ribbon. In some samples, a shoulder was detected on the absorption peak. A similar shoulder in Czochralski grown material has been variously interpreted in the literature as due to a complex of silicon, oxygen, and vacancies, or to a phase of SiO2 developed along dislocations in the material. In the case of web silicon, it is not clear which is the correct interpretation.

Hyland, S. L.↗
NASA NTRS2005

Neutron Diffraction Study Oxygen Dissolution Alpha(sub 2)-Ti3Al

Rietveld refinements of neutron powder diffraction data on alpha(sub 2)-Ti3Al have been performed to determine the crystal structure as a function of interstitial oxygen (O) concentration for three alloys with a Ti/Al ratio of approximately equal to 2.34 and O concentrations of 0.25%, 3.99% and 7.71%. The structures of the allows are hexagonal in space group P6(sub 3)/mmc where Ti and Al atoms populate unique sites with excess Al at the Ti site and O atoms occupy octahedral interstitial sites surrounded by six Ti sites. The length of the c-axis was found to increase linearly as the O occupancy of the interstitial sites increased; this lattice lengthening effect was much less pronounced along the alpha axis. Correspondingly, the increases in the lengths of Ti-Al and Ti-Ti bonds with a major component of their direction parallel to the c-axis were roughly an order of magnitude greater than the increases in the lengths of Ti-al and Ti-Ti bonds more closely aligned with the alpha-axis. Densities calculated form the lattice parameters and occupancy factors fall in the range (4.118 plus or minus 0.004) grams per cubic centimeter to (4.194 plus or minus 0.004) grams per cubic centimeter, and exhibit a nearly linear increase with oxygen concentration. Measured densities of (4.113 plus or minus 0.001) grams per cubic centimeter, (4.146 plus or minus 0.009) grams per cubic centimeter, and (4.191 plus or minus 0.002) grams per cubic centimeter for these alloys agree with the results of the refinements.

Jones, Camille Y.↗
NASA NTRS1985

Oxygen and carbon in silicon

The properties of the early transistors were determined by the minority-carrier lifetime, as is the silicon photovoltaic solar cell. Most of the devices on the modern integrated circuits are majority carrier devices, in part to avoid this lifetime dependence. The micro-electronics industry typically starts with wafers with a minority-carrier lifetime of 1000 micro-seconds, but during device fabrication this lifetime is reduced to beflow 1 micro-second, in spite of extraordinary cleanliness and precautions. Process-induced defects (PID) include point defects, defect complexes, line defects, and bulk precipitates. One of the aspects that needs to be better understood is the nature of minority carrier recombination at line defects and at precipitates. Some of the PIDs are known to be related to the fast-diffusers of the iron-series transition elements. One of the common techniques of dealing with these elements is intrinsic gettering by the oxygen precipitates. But even in the gettered state, there may be a residual effect on the lifetime. Oxygen is an almost ubiquitous impurity in silicon and plays an important role in both integrated circuits and solar cells. The isolated oxygen interstitial is electrically inactive, but in its various aggregated forms it has a variety of electrical activities. The agglomeration and precipitation of oxygen, including impurity gettering and the complicating role of carbon, is discussed.

Corbett, J. W.↗
NASA NTRS1991

Crystal-field-driven redox reactions: How common minerals split H2O and CO2 into reduced H2 and C plus oxygen

It is difficult to prove the presence of molecular H2 and reduced C in minerals containing dissolved H2 and CO2. A technique was developed which unambiguously shows that minerals grown in viciously reducing environments contain peroxy in their crystal structures. The peroxy represent interstitial oxygen atoms left behind when the solute H2O and/or CO2 split off H2 and C as a result of internal redox reactions, driven by the crystal field. The observation of peroxy affirms the presence of H2 and reduced C. It shows that the solid state is indeed an unusual reaction medium.

Freund, F.↗
NASA NTRS1998

Oxygen Impurities and Defects in Epitaxial Layer SiC and SiC Wafer Characterized by Room and Low Temperatures FTIR

SiC as a highly promising semiconducting material has received increasing attention in the last decade. The impurities such as oxygen and hydrogen have a great effect in electronic properties of semiconducting materials. In this study, the FTIR spectra were measured at room temperature (25 C) and low temperature (-70 C) for an n-type SiC substrate, a p-type epitaxial layer SiC, and patterned Ta on a p-type epitaxial layer SiC sample. The oxygen related IR peaks were measured for all three samples at room and low temperatures. The peak at 1105 cm(exp -1) is the result of a substitutional carbon and a interstitial oxygen in SiC. The concentration of the impurity oxygen increases in the SiC epitaxial layer during the CVD and electron beam processes. For the n-type SiC substrate, this peak does not appear. The peak at 905 cm(exp -1) exists in the IR spectra only for two epitaxial layer on p-type SiC substrate samples. This peak is related to oxygen vacancy centers in SiC, which are introduced in the CVD epitaxial growth process. At low temperature, the peak at 1105 cm(exp -1) shifts down and the peak at 905 cm(exp -1) shifts up for the epitaxial layer SiC samples. It can be explained that, at low temperatures, the stress increases due to the distorted bonds. The study shows that FTIR is a very effective method to evaluate low concentration impurities in SiC.

Lu, W. J.↗
NASA NTRS1981

Large area silicon sheet by EFG

The influence of parameters such as CO2 concentration, gas flow patterns, quartz in the bulk melt, melt doping level and growth speed on ribbon properties was examined for 10 cm wide ribbon. Ribbon quality is optimized for ambient CO2 in argon concentrations in the range from 1000 to 5000 ppm. Cell performance degrades at CO2 concentrations above 5000 ppm and IR interstitial oxygen levels decrease. These experiments were done primarily at a growth speed of 3.5 cm/minute. Cartridge parameters influencing the ribbon thickness were studied and thickness uniformity at 200 micrometers (8 mils) has been improved. Growth stability at the target speed of 4.0 cm/minute was improved significantly.

Source record↗
NASA NTRS1984

Increased radiation resistance in lithium-counterdoped silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.

Weinberg, I.↗
NASA NTRS1984

An X-ray diffraction study of titanium oxidation

Titanium specimens of commercial purity were exposed at 1100 to 1400 F to laboratory air for times up to 100 hours. The extent of substrate contamination by interstitial oxygen was was determined by a new X-ray diffraction analysis involving transformation of X-ray diffraction intensity bands. The oxygen solid-solubility at the oxide-metal interfaces and its variation with time at temperature were also determined. Diffusion coefficients are deduced from the oxygen depth profiles.

Wiedemann, K. E.↗
NASA NTRS1995

High-Density Amorphous Ice, the Frost on Interstellar Grains

Most water ice in the universe is in a form which does not occur naturally on Earth and of which only minimal amounts have been made in the laboratory. We have encountered this 'high-density amorphous ice' in electron diffraction experiments of low-temperature (T less than 30 K) vapor-deposited water and have subsequently modeled its structure using molecular dynamics simulations. The characteristic feature of high-density amorphous ice is the presence of 'interstitial' oxygen pair distances between 3 and 4 A. However, we find that the structure is best described as a collapsed lattice of the more familiar low-density amorphous form. These distortions are frozen in at temperatures below 38 K because, we propose, it requires the breaking of one hydrogen bond, on average, per molecule to relieve the strain and to restructure the lattice to that of low-density amorphous ice. Several features of astrophysical ice analogs studied in laboratory experiments are readily explained by the structural transition from high-density amorphous ice into low-density amorphous ice. Changes in the shape of the 3.07 gm water band, trapping efficiency of CO, CO loss, changes in the CO band structure, and the recombination of radicals induced by low-temperature UV photolysis all covary with structural changes that occur in the ice during this amorphous to amorphous transition. While the 3.07 micrometers ice band in various astronomical environments can be modeled with spectra of simple mixtures of amorphous and crystalline forms, the contribution of the high-density amorphous form nearly always dominates.

Jenniskens, P.↗
NASA NTRS1997

An Oxidation-Resistant Coating Alloy for Gamma Titanium Aluminides

Titanium aluminides based on the g-phase (TiAl) offer the potential for component weight savings of up to 50 percent over conventional superalloys in 600 to 850 C aerospace applications. Extensive development efforts over the past 10 years have led to the identification of "engineering" gamma-alloys, which offer a balance of room-temperature mechanical properties and high-temperature strength retention. The gamma class of titanium aluminides also offers oxidation and interstitial (oxygen and nitrogen) embrittlement resistance superior to that of the alpha(sub 2) (Ti3Al) and orthorhombic (Ti2AlNb) classes of titanium aluminides. However, environmental durability is still a concern, especially at temperatures above 750 to 800 C. Recent work at the NASA Lewis Research Center led to the development of an oxidation-resistant coating alloy that shows great promise for the protection of gamma titanium aluminides.

Brady, Michael P.↗