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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Stacked-Die SiC Half-Bridge Module with Minimum Loop Inductance

Minimizing parasitic inductance of power modules is needed to advance their electrical performance. Innovation in the past decade has driven down the inductance of SiC half-bridge power modules to around 1–2 nH by using multilayer, embedded, and hybrid structures. Further reduction becomes difficult, mainly limited by the excessive interconnects required for the planar placement of vertical conducting chips. To address this, a vertically stacked-die approach is proposed in this paper, taking advantage of the vertical conducting nature of the SiC chips. With ceramic decoupling capacitors integrated, 0.48 nH overall loop inductance is achieved and validated by experimental measurement. This paper also discusses potential approaches to further reduce the inductance.

Ribeiro, Pedro↗
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs

The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗
DOE OSTI2023

Effects of Encapsulant Properties on the Thermo-Mechanical Reliability of Double-Side Cooled Power Modules for Traction Inverters

Double-side cooled power modules are being developed for next-generation traction inverters due to their better heat extraction, lower profile, and lower parasitic inductances. However, due to their rigid structure, they cause reliability concerns arising from high thermo-mechanical stresses at the interconnection joints in the module. In this work, a materials-based approach using rigid encapsulants is presented for reducing thermo-mechanical fatigue. Finite-element thermo- mechanical simulations were performed to examine the effects of the elastic modulus and coefficient of thermal expansion of epoxy- based encapsulants on the bond deformation inside a double-side cooled power module. It was found that a rigid encapsulant with a high modulus of 6.0 GPa or above and a coefficient of thermal expansion around 20 ppm/oC would improve the thermo- mechanical reliability of double-side cooled power modules by decreasing the permanent bond deformation inside the modules by 50-60%.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Power Layout Design of a GaN HEMTs-Based High-Power High-Efficiency Three-Level ANPC Inverter for 800 V DC Bus System

Multiple commutation paths exist for switching devices in a three-level active neutral point clamped (3L-ANPC) inverter operation based on the selected switching state and current direction. In addition, the capacitive coupling path of the nonswitching device is a key design aspect for enabling high voltage and high current operation of gallium nitride (GaN) switches in 3L-ANPC topology. A comprehensive study of the switching transient events of inner, outer, and clamping devices of 3L-ANPC is presented in this article. The commutation mechanisms for worst-case transient voltage overshoots (TVOs) are identified. A simplified equivalent circuit model is presented to determine the design criteria for the power layout structure's parasitic inductances. A power layout strategy satisfying the design criteria is then proposed using an insulated metal substrate power printed circuit board (PCB) to enable efficient high-power operation. The proposed design minimizes the commutation and capacitive coupling path inductances to 6 nH and 11.5 nH, respectively. This enables the fast switching operation of GaN HEMTs at 800 V dc, 36 A with a low TVO of 31% verified through experimental three-level double pulse test results. Experimental evaluation of a three-phase 3L-ANPC hardware prototype based on the proposed power layout shows 99% efficiency at 800 V, 9.5 kVA and 50 kHz switching frequency. The proposed design achieves a low case-to-ambient thermal resistance of 2.3 °C/W.

42 ENGINEERING↗
DOE OSTI2024

Power Electronics Manufacturing Improvements for Heavy-Duty Fuel Cell Vehicles

The Marel Power Solutions project, funded by the U.S. Department of Energy under Award DE-SC0023801, focused on advancing manufacturing techniques for power electronics in heavy-duty fuel cell vehicles. The research aimed to enhance system efficiency, reduce costs, and support broader adoption of hydrogen fuel cell technology. Key areas of investigation included power topology, thermal modeling, system architecture, and accessibility through software tools. Key Accomplishments: 1. Power Topology: - Developed an interleaved boost converter with optimized phase count, leveraging Marel’s proprietary Power Stacks. - Achieved reduced parasitic inductance and resistance, enabling high efficiency in DC-DC converters. 2. Thermal Modeling: - Integrated innovative cooling systems into compact Silicon Carbide (SiC) modules. - Simulations demonstrated the ability to dissipate significant heat (up to 7.5 kW), ensuring device reliability under heavy loads. 3. System Architecture: - Utilized simulation tools to analyze the impact of various fuel cell and vehicle parameters on efficiency. - Highlighted the role of smaller, modular improvements, such as enhanced DC-DC converters, in achieving system-wide gains. 4. Accessibility: - Evaluated and implemented MATLAB/Simulink code generation tools for real-world hardware applications. - Demonstrated the potential for rapid prototyping of custom power systems with reduced development costs. Impact and Benefits: - Efficiency and Cost Reduction: Marel’s cooling technology enhances SiC die performance, reducing the number of dies required and overall system size. - Scalability and Flexibility: The innovations support tailored solutions for diverse applications, from mass transit to mining vehicles. - Sustainability: The research promotes the integration of electrification technologies, helping meet rising energy demands sustainably. Conclusion: The project’s outcomes advance the state of power electronics for hydrogen fuel cell vehicles, enabling more efficient, compact, and cost-effective solutions. These developments lay a foundation for future innovation, contributing to the broader adoption of clean energy technologies in transportation and other industries.

08 HYDROGEN↗
DOE OSTI2024

Double-Side Cooled 1.2kV, 300A SiC MOSFET Phase-leg Modules for 200 kW, > 100 kW/L Traction Inverters

The packaging of a double-side cooled 1.2 kV, 149 A SiC phase-leg modules has been reported in recent years for making 100 kW, 100 kW/L traction inverters. Each phase-leg module consists of two SiC MOSFETs, one per switch position. Six of the phase-leg modules are assembled into a segmented inverter configuration to meet the power and power density requirement. In this work, the layout of the phase-leg module was redesigned to include four of the SiC MOSFETs, two per switch position, with the aim of doubling the power to 200 kW and increasing the power density beyond 100 kW/L, but with only a 10.25% footprint increase. Key features of the packaging technology developed in the previous work were implemented in the current work, which include silver sintering for chip bonding and porous silver inter-posts for bonding device source pads to substrate. Parasitic extraction simulation showed that the four-chip module has a low parasitic inductance of 4.7 nH, like the two-chip module. Static characterization of the four-chip prototypes showed a low average on-resistance of 9 mΩ and a low average leakage current of 5 nA at Vds of 1.2 kV.

Zhang, Zichen↗
DOE OSTI2025

Rapid Prototyping Techniques for Organic Direct-Bonded-Copper Power Modules

Organic Direct-Bonded-Copper (ODBC) is a novel packaging technology for power modules which allows higher flexibility in layout design. In this work, a set of rapid prototyping techniques are developed for ODBC modules based on a polyimide dielectric material. These techniques enable fast and low-cost fabrication of modules with 3-Dimensional (3D) layout features. An example half-bridge (HB) silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) module is designed and prototyped using the proposed techniques aiming at ultra-low power loop inductance. Finite element analysis (FEA)-circuit co-simulations results and experimental results validate an approximately 0.71nH power loop inductance for the example module design.

36 MATERIALS SCIENCE↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Single channel PICOSEC Micromegas detector with improved time resolution

This paper presents design guidelines and the experimental verification of a single-channel PICOSEC Micromegas (MM) detector with an improved time resolution. The design encompasses the detector board, vessel, auxiliary mechanical parts, and electrical connectivity for high voltage (HV) and signals, focusing on improving the stability, reducing noise, and ensuring signal integrity to optimize timing performance. A notable feature is the simple and fast reassembly procedure, facilitating quick replacement of the detector internal components that allows for an efficient measurement strategy involving different detector components. The paper also examines the influence of parasitic capacitance and inductance on the output signal integrity. To validate the design, a prototype assembly and three interchangeable detector boards with varying readout pad diameters were manufactured. Detectors were initially tested in the laboratory. Finally, the timing performance of the detectors with different pad sizes was verified using 150 GeV muons. Notably, a record time resolution for a PICOSEC Micromegas detector technology with a CsI photocathode of 12.5 ± 0.8 ps was achieved for a detector with 10 mm diameter readout pad size.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Frequency Response Analysis to Monitor and Identify Changes in the Impedance of a Photovoltaic Panel Measured Online using a Power Optimizer

Photovoltaic (PV) cells are generally modeled as a current source due to photocurrent, p-n junction diodes with parasitic resistance, capacitance, and inductance. This paper proposes online frequency response analysis (FRA) to measure the impedance of a PV panel using an existing panel-level power optimizer in a PV system. The algorithm will actively perturb a small signal into a 300 W rooftop PV panel and compute its small signal impedance. The technology discussed is easy to incorporate, requires no additional hardware, doesn't alter the stability of the system, and is implemented at a steady-state point. The power optimizer initially stabilizes at an operating point and then perturbs the PV current via FRA and computes PV panel impedance. The relative standard deviation test conducted indoors under 300 W/m 2 illumination on a PV panel shows a less than 5% error rate in PV panel impedance magnitude and phase is measured using a power optimizer.

14 SOLAR ENERGY↗
DOE OSTI2025

Packaging a 650V/400A GaN Half-bridge Power Module with Ultra-low Parasitics for Electric Vehicle Drive Applications

This paper proposes a compact and efficient half-bridge power module with three 650 V / 150 A GaN dies in parallel. The power module incorporates a main power printed circuit board (PCB), an interface PCB, and a flex PCB to achieve low parasitics in both power loop and gate-side connection, resolving the issue of high parasitics typically encountered with wire bonding in high-current applications. Additionally, the interface PCB decouples the design constraints between the power loop and the gate loops. The proposed design is optimized with a vertical loop configuration to reduce power loop inductance through magnetic flux cancellation. Finite element analysis indicates that the power loop inductance is 0.58 nH at 100 MHz, while the maximum die junction temperature reaches 131 °C under an ambient temperature of 65 °C and a load current of 385 A. The proposed multi-piece PCB structure reduces the inductance of the drive circuit to minimize EMI and to mitigate false triggering. At the same time, it reduces impedance mismatches across different driver circuits, thereby achieving dynamic current sharing in multi-chip parallel configurations. Under simulation conditions of 400 V / 385 A, the current imbalance among chips was limited to 5 A. A 400 V / 385 A double-pulse test was conducted to experimentally validate the performance of the proposed power module.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Organic Direct-Bonded-Copper-Based Rapid Prototyping for Silicon Carbide Power Module Packaging

Silicon carbide (SiC) power devices are playing ever- growing roles in high-power-density power electronics converters by offering benefits such as high voltage rating, fast transients, and high thermal performance. Organic direct-bonded copper (ODBC)-based packaging, due to its ductility and ease of han- dling, allows the possibility of a more flexible layout design that may better tap the potential of SiC benefits. In this work, an ODBC-based prototyping routine is developed that accelerates the iterations of packaging layout design with low cost. The properties of ODBC and its handling are briefly introduced, and tools and fabrication steps are explained. Following this routine, a 1.2-kV SiC half-bridge power module is designed and fabricated with the focus on sub-nanohenry ultra-low loop inductance. Simulation and experimental validation are also conducted.

25 ENERGY STORAGE↗
DOE OSTI2024

Understanding the dynamic interactions of root-knot nematodes and their host: role of plant growth promoting bacteria and abiotic factors

Root-knot nematodes (Meloidogyne spp., RKN) are among the most destructive endoparasitic nematodes worldwide, often leading to a reduction of crop growth and yield. Insights into the dynamics of host-RKN interactions, especially in varied biotic and abiotic environments, could be pivotal in devising novel RKN mitigation measures. Plant growth-promoting bacteria (PGPB) involves different plant growth-enhancing activities such as biofertilization, pathogen suppression, and induction of systemic resistance. We summarized the up-to-date knowledge on the role of PGPB and abiotic factors such as soil pH, texture, structure, moisture, etc. in modulating RKN-host interactions. RKN are directly or indirectly affected by different PGPB, abiotic factors interplay in the interactions, and host responses to RKN infection. We highlighted the tripartite (host-RKN-PGPB) phenomenon with respect to (i) PGPB direct and indirect effect on RKN-host interactions; (ii) host influence in the selection and enrichment of PGPB in the rhizosphere; (iii) how soil microbes enhance RKN parasitism; (iv) influence of host in RKN-PGPB interactions, and (v) the role of abiotic factors in modulating the tripartite interactions. Furthermore, we discussed how different agricultural practices alter the interactions. Finally, we emphasized the importance of incorporating the knowledge of tripartite interactions in the integrated RKN management strategies.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

Tradeoffs in single stage drift step recovery diode generator design

A high-voltage generator of nanosecond pulses utilizing a drift step recovery diode (DSRD) as an opening switch in the compression section is designed to operate at peak voltages of 4 kV and repetition rates of 2 MHz in burst mode at reduced voltages. The generator is used to perform empirical studies on the output metrics of a DSRD generator with a focus on matching the circuit of the reverse current loop parameters and DSRD to the load. The dynamic impedance introduced by nonlinear elements in the DSRD was investigated with respect to the driving circuit by varying the number of DSRDs connected in series. Experimental results indicate that optimization of the driving circuit for the DSRD is key to minimizing losses and achieving optimal pulse compression. Furthermore, the results also indicate trends in DSRD performance as larger storage inductances and longer pumping times are used, limiting the pulse compression capabilities of a single stage DSRD generator.

Electrical properties and parameters↗