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Phase shifter circuit adjusts the phase relationship between a locally generated reference frequency and a received RF signal applied to a phase-coherent detector. It is small enough to be integrated into a receiver subassembly and operates on command from remote control panels.
Phased arrays afford many advantages over mechanically steered systems. However, they are also more complex, heavy, and most of all costly. The high cost mainly originates from the complex feeding structure. This paper proposes a novel feeding scheme to eliminate all phase shifters and achieve scanning via one-dimensional motion. Beam scanning is achieved via a series fed array incorporating feeding transmission lines whose wave velocity can be mechanically adjusted. Along with the line design, ideal element impedances to be used in conjunction with the line are derived. Practical designs are shown which achieve scanning to +/-30deg from boresight. Finally, a prototype is fabricated and measured, demonstrating the concept.
Microwave phase shifters have been fabricated from (YBa2Cu3O(7-delta) or Au)/SrTiO3 and Au/Ba(x)Sr(1-x)TiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counter-parts parts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is approximately equal 5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.
Electronically scanned arrays are required for space based radars that are capable of tracking multiple robots, rovers, or other assets simultaneously and for beam-hopping communication systems between the various assets. ^Traditionally, these phased array antennas used GaAs Monolithic Microwave Integrated Circuit (MMIC) phase shifters, power amplifiers, and low noise amplifiers to amplify and steer the beam, but the development of RF MEMS switches over the past ten years has enabled system designers to consider replacing the GaAs MMIC phase shifters with RF Micro-Electro Mechanical System (MEMS) phase shifters. In this paper, the implication of replacing the relatively high loss GaAs MMICs with low loss MEMS phase shifters is investigated.
Uniform linear phased arrays where many radiating elements share a relatively small number of phase shifters are investigated. Such architectures arise in arrays which derive the time delays in the signal paths from a small group of independent phase shifters. In particular, a true time-delay device which has been suggested recently for optically controlled arrays is used as the basic phase shifter. Different architectures, viz. alternative procedures of deriving the necessary time delay for each antenna in the face of phase-shifter inaccuracies, are examined. The variance of the steered beam's direction is used as the performance criterion. The direction-optimal architecture is obtained by means of quadratic programming, and is shown not to be unique. The nonuniqueness of the optimal architecture is exploited to improve other characteristics of the array's beam shape, and the optimal solution is shown to compare favorably with a suboptimal interleaved solution which is easier to implement.
Phase shifters are linear one- or two-port devices for adjusting the reflection or insertion carrier phase of a band-limited signal, nominally from 0 to 2π radians. A perfect phase shifter would have: no insertion loss, a voltage standing wave ratio of 1:1, arbitrarily high power handling capability, linear phase-versus-frequency response, an arbitrarily small footprint, radiation immunity, no DC power consumption, and of course be free. Remarkably, real phase shifters can approach some of these idealized attributes. New processing techniques hold promise to significantly reduce manufacturing cost (see "Trends" at the end of this chapter).
Voltage variable phase shifter having linear voltage-to-phase characteristics
Novel microwave phase shifters consisting of coupled microstriplines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.
Novel microwave phase shifters consisting of coupled microstrip lines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.
Abstract A high-resolution clock phase shifter is implemented to adjust the phase of multiple clocks at 40 MHz, 80 MHz, or 640 MHz in the ALTIROC chip. The phase shifter has a coarse-phase shifter and a fine-phase shifter to achieve a step size of 97.7 ps and an adjustable range of 25 ns. The fine delay unit is based on a Delay Locked Loop (DLL) operating at 640 MHz. The phase shifter is fabricated in a 130 nm CMOS process. The area of the phase shifter is 725 µm × 248 µm. The Differential Non-Linearity (DNL) and the Integral Non-Linearity (INL) are ±0.6 LSB and ±0.75 LSB, respectively. The jitter from −25 °C to 20 °C is less than 15.5 ps (RMS), including the contributions from the FPGA clock source and the PLL. The power consumption is 11.2 mW.
Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.
While there are a myriad of applications for microwave phase shifters in instrumentation and metrology, power combining, amplifier linearization, and so on, the most prevalent use is in scanning phased-array antennas. And while this market continues to be dominated by military radar and tracking platforms, many commercial applications have emerged in the past decade or so. These new and potential applications span low-Earth-orbit (LEO) communications satellite constellations and collision warning radar, an aspect of the Intelligent Vehicle Highway System or Automated Highway System. In any case, the phase shifters represent a considerable portion of the overall antenna cost, with some estimates approaching 40 percent for receive arrays. Ferrite phase shifters continue to be the workhorse in military-phased arrays, and while there have been advances in thin film ferrite devices, the review of this device technology in the previous edition of this book is still highly relevant. This chapter will focus on three types of phase shifters that have matured in the past decade: GaAs MESFET monolithic microwave integrated circuit (MMIC), micro-electromechanical systems (MEMS), and thin film ferroelectric-based devices. A brief review of some novel devices including thin film ferrite phase shifters and superconducting switches for phase shifter applications will be provided. Finally, the effects of modulo 2 phase shift limitations, phase errors, and transient response on bit error rate degradation will be considered.
Though there are a few examples of scanning phased array antennas that have flown successfully in space, the quest for low-cost, high-efficiency, large aperture microwave phased arrays continues. Fixed and mobile applications that may be part of a heterogeneous exploration communication architecture will benefit from the agile (rapid) beam steering and graceful degradation afforded by phased array antennas. The reflectarray promises greater efficiency and economy compared to directly-radiating varieties. Implementing a practical scanning version has proven elusive. The ferroelectric reflectarray, under development and described herein, involves phase shifters based on coupled microstrip patterned on Ba(x)Sr(1-x)TiO3 films, that were laser ablated onto LaAlO3 substrates. These devices outperform their semiconductor counterparts from X- through and K-band frequencies. There are special issues associated with the implementation of a scanning reflectarray antenna, especially one realized with thin film ferroelectric phase shifters. This paper will discuss these issues which include: relevance of phase shifter loss; modulo 2(pi) effects and phase shifter transient effects on bit error rate; scattering from the ground plane; presentation of a novel hybrid ferroelectric-semiconductor phase shifter; and the effect of mild radiation exposure on phase shifter performance.
At submillimeter-wave frequencies, due to the nonavailability of low-loss phase shifters, electronic antenna beam scanning is difficult to realize. Traditionally, power-hungry and bulky motors are used to mechanically scan the antenna beam. At lower-frequencies, phased array antennas are most commonly used where low-loss phase shifters are used with the array elements to accomplish beam steering. However, development of similar phased array antennas at submillimeter-waves has been challenging. Recently, we have developed a low-loss microelectromechanical systems (MEMS) based phased shifter in the 500-750 GHz band. In this work, we present a submillimeter-wave phased array antenna system with a cavity-backed double slot antenna architecture using the MEMS-based phase shifters. To demonstrate the concept, we developed two arrays: first one is a 8×1 linear antenna array with a fixed waveguide feeding network that achieved ±20◦ beam scanning, 18 dB directivity, and less than 1 dB scan loss over the design frequency of 500–570 GHz. The second one is a 4 × 1 linear antenna array with integrated MEMS-based phase shifters on each array element, achieving 15 dB directivity and capable of dynamic beam scanning over a range of ±9 ◦ . All the plots presented are simulated results since the parts are currently being fabricated. We hope to have access to our assembly and measurement facilities over the next few months and present measured performances at the conference.
Heterodyne phase shifter with inductive delay line pickup providing stepless phase shift
Beam-scanning of submillimeter-wave spectrometers and radiometers have traditionally been implemented using mechanical scanning mechanisms due to the absence of lowloss electronic phase shifters. Recently developed waveguideintegrated MEMS phase shifters are paving the way to realize electronic beam-steering using submm-wave phased arrays. In this work, two phased array demonstrators are presented that operate from 500GHz to 600GHz. A 20 dB directivity 8 ? 1 leaky-wave antenna array will be demonstrated, using fixed waveguide feeding networks, to be capable of ?20? scanning with a scan loss less than 1:7 dB. Secondly, an equivalent but smaller 17 dB directivity 4 ? 1 array will be integrated with MEMS phase shifters to demonstrate a dynamic scanning capability over a ?9:5? range. The antenna array is based on closely sampled square waveguides, terminated with a double-iris, in close proximity of a low permittivity superstrate in order to reduce the grating lobes at larger scanning angles. Measurements are expected to be presented at the conference.
Continuously variable microwave stripline phase shifter with linear shift vs frequency by dielectric constant variation
The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.