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Abstracts, bibliographic data, oral presentations, and published papers on (1) Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide, and (2) Properties of Gallium Phosphide Schottky Barrier Rectifiers for Use at High Temperature are presented.
A series of bis(acyl)phosphide-supported Eu complexes were synthesized (bis(acyl)phosphide = BAP). Here, in this study, BAP ligands proved to be excellent ligands for the synthesis of both Eu 3+ and Eu 2+ molecular complexes. Sodium bis(mesitoyl)phosphide (Na( mes BAP)) and sodium bis(2,4,6-triisopropylbenzoyl)phosphide (Na( tripp BAP)) were employed as ligand precursors for the synthesis of the Eu 3+ complexes Eu(bis(mesitoyl)phosphide) 3 (thf) 2 (Eu( mes BAP) 3 (thf) 2 ) and Eu(bis(2,4,6-triisopropylbenzoyl)phosphide) 3 (Eu( tripp BAP) 3 ), as well as the Eu 2+ complex, Eu(bis(2,4,6-triisopropylbenzoyl)phosphide) 2 (dme) 2 (Eu( tripp BAP) 2 (dme) 2 ) (thf = tetrahydrofuran, dme = 1,2-dimethoxyethane). All complexes were characterized using a combination of UV–vis–NIR–IR and NMR spectroscopies, and single-crystal X-ray diffraction (SC-XRD). The magnetic properties of these three monomeric Eu complexes were investigated by variable-temperature magnetic susceptibility. The magnetic data are typical for these ions, with Eu( tripp BAP) 2 (dme) 2 displaying Curie-type behavior. Both Eu( tripp BAP) 3 and Eu( mes BAP) 3 (thf) 2 possess similar 7 F 0 - 7 F 1 spin–orbit energy gaps and a similar zero-field splitting of the 7 F 1 state.
The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.
Although lithium-sulfur batteries are a promising approach for achieving high energy density, their commercial viability is limited by poor sulfur redox kinetics, polysulfide shuttling, and lithium metal instability. To resolve these issues concurrently, we utilize titanium phosphides (TiP x ) as dual-function materials to catalyze the sulfur redox kinetics at the cathode and stabilize the lithium metal at the anode. Importantly, these phosphides are synthesized via a facile, highly scalable one-step mechanochemical ball-milling process that does not generate toxic phosphine gas as a byproduct, making it more viable compared to traditional synthesis routes. At the cathode, we find that higher phosphorus contents in the phosphide as in TiP 2 leads to superior redox kinetics and reduced polysulfide shuttling due to improved polysulfide adsorption ability. Meanwhile, at the anode, TiP 2 acts as a lithiophilic seed in a 3-dimensional carbonaceous host that can be lithiated to form a Li-TiP 2 /C composite. This composite alleviates the volume changes of lithium metal while utilizing TiP 2 to form a more favorable solid-electrolyte interface (SEI). Full coin cells employing TiP 2 in the cathode and anode were assembled with a sulfur loading of 4 mg cm -2 and a negative to positive capacity (N/P) ratio of 6. After 50 cycles, the TiP 2 full cells retain a higher capacity of 643 mA h g -1 compared to 422 mA h g -1 for the conventional cell, despite the higher N/P ratio of 12 for the conventional cell. Altogether, we showcase the viability of employing metal phosphides as catalysts in practical lithium-sulfur batteries.
Binary transition metal phosphides and their solid solutions have emerged as promising hydrogen evolution reaction (HER) catalysts. Although many research endeavors have adopted strategies to vary compositions to optimize catalytic performance, they mainly focus on binary structures, which represent only a small fraction of the abundant phase space of structure types among transition metal phosphides. Here, the largely unexplored class of ternary and multinary ordered phosphides in catalysis comprises two or more metals with quite different chemical nature, concealing the structure–property relationships essential for advancing catalyst design. Here, we explored phosphides crystallizing in one of the most abundant ordered intermetallic structure types, —the ThCr 2 Si 2 type, —where square nets of 3d transition metal M and P atoms are separated by layers of electropositive Ba cations. Four ternary BaM 2 P 2 (M = Fe, Fe/Cu, Fe/Ni, Ni) catalysts were synthesized and characterized. BaNi 2 P 2 showed high HER activity in acidic electrolyte, which required an overpotential, η 10 , of only 62 mV to drive current density j = –10 mA/cm 2 and high stability with a potential drop rate of 0.25 mV/h. BaNi 2 P 2 outperformed other Ni-based catalysts, such as Ni 2 P and Ni 5 P 4 . Notably, at current densities above –170 mA/cm 2 , BaNi 2 P 2 outperformed the standard Pt electrode measured under identical conditions. Electronic structure analysis revealed a volcano-type activity trend among the four BaM 2 P 2 catalysts based on their d-band center positions, highlighting the role of electropositive Ba cations in shifting the Ni-3d orbitals into an optimal position.
A numerical model for diffusion-controlled phase growth has been applied to the exsolution of phosphide lamellae in lunar metal grains. Computer simulations reproduce observed composition profiles, and reveal the influence of cooling rate on dimensional and compositional parameters of phosphide and metal. At lower cooling rates, phosphide lamellae are larger and the concentration of P in the metal host close to the interface is lower. Cooling rates inferred for Apollo 16 samples, based on compositions and dimensions of the phosphide-metal grains, are mostly in the range 1-100 C/day. These rates correspond to burial depths of 5-0.5 m for melt rocks and 3-0.3 m for breccias. This is in good agreement with thicknesses of lunar cooling units determined by other techniques.
Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.
Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.
A method of manufacturing a bifunctional electrocatalyst for overall water splitting comprising oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) by growing electrocatalyst comprising primarily metallic phosphides on a three-dimensional substrate by: immersing the substrate in an iron nitrate solution to form a once disposed substrate; subjecting the once disposed substrate to thermal phosphidation with phosphorus powder under inert gas to grow metal phosphides thereupon and form a once subjected substrate; cooling the once subjected substrate to form a cooled, once subjected substrate; immersing the cooled, once subjected substrate in an iron nitrate solution to form a twice disposed substrate; and subjecting the twice disposed substrate to thermal phosphidation with phosphorus powder under inert gas to provide an electrode comprising the bifunctional electrocatalyst on the three-dimensional substrate.
A method of electrocatalytic water splitting by providing an anode and a cathode; and utilizing the anode and the cathode for alkaline water electrolysis. Each of the anode and the cathode comprises a uniform distribution of a bifunctional electrocatalyst comprising metallic phosphides on a conductive substrate. The metallic phosphides comprise arion phosphide (FeP) and dinickel phosphide (Ni 2 P). The bifunctional electrocatalyst promotes hydrogen evolution reaction (HER) at the cathode, and oxygen evolution reaction (OER) at the anode.
Here, the first uranium bis(acyl)phosphide (BAP) complexes were synthesized from the reaction between sodium bis(mesitoyl)phosphide (Na( mes BAP)) or sodium bis(2,4,6-triisopropylbenzoyl)phosphide (Na( tripp BAP)) and UI 3 (1,4-dioxane) 1.5 . Thermally stable, homoleptic BAP complexes were characterized by single-crystal X-ray diffraction and electron paramagnetic resonance (EPR) spectroscopy, when appropriate, for the elucidation of the electronic structure and bonding of these complexes. EPR spectroscopy revealed that the BAP ligands on the uranium center retain a significant amount of electron density. The EPR spectrum of the trivalent U( tripp BAP) 3 has a rhombic signal near g = 2 (g 1 = 2.03; g 2 = 2.01; and g 3 = 1.98) that is consistent with the EPR-observed unpaired electron being located in a molecular orbital that appears ligand-derived. However, upon warming the complex to room temperature, no resonance was observed, indicating the presence of uranium character.
Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness. To explore the possibility, promising candidate materials were selected, and particle tracking detectors were fabricated. An indium phosphide detector with a metal-intrinsic-metal structure has been fabricated for particle tracking. The detector was tested using radioactive sources and a high energy proton beam at Fermi National Accelerator Laboratory. In addition to its simplistic design and fabrication process, the indium phosphide particle detector showed a very fast response time of hundreds of picoseconds for the 120 GeV protons, which are comparable to the ultra-fast silicon detectors. This fast-timing response is attributed to the high electron mobility of indium phosphide. Such material properties can be leveraged to build novel detectors with superlative performance.
Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.
Aminophosphines are a class of inexpensive, environmentally benign phosphorus precursors that have provided routes to various metal phosphides. In this work, we use the aminophosphine tris(diethyl)aminophosphine to synthesize tin phosphide nanocrystals.
Transition metal phosphide nanoparticles supported on silica were used as catalysts to investigate the hydrodeoxygenation of methyl laurate (used as a model compound for vegetable oils). Ni 2 P, Ni 1 Mo 1 P, and Ni 1.6 Mo 0.4 P were synthesized using a molecular precursor route. The nanoparticles were added to the silica support without any changes in their structure or particle size. As a reference and for comparison, MoP/SiO 2 was also prepared by the phosphite method. The prepared catalysts were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, and chemical analysis. A higher conversion is reached with the MoP/SiO 2 monometallic catalyst, close to that with Ni 1 Mo 1 P/SiO 2 . However, this observation is misleading because the differences in dispersion obscure the result that the intrinsic activity (turnover frequency) of the bimetallic catalyst, prepared by a molecular precursor route, is significantly higher than that of the monometallic catalyst, prepared by the phosphite route, revealing a synergistic effect on the catalytic activity due to the formation of the bimetallic phosphide.
Metal phosphide-containing materials have emerged as a potential candidate of non-precious metal-based catalysts for alkaline oxygen evolution reaction (OER). While it is known that metal phosphide undergoes structural evolution, considerable debate persists regarding the effects of dynamics on the surface activation and morphological stability of the catalysts. In this study, we synthesize NiP x -FeO x core-shell nanocatalysts with an amorphous NiP x core designed for enhanced OER activity. Using ex-situ X-ray absorption spectroscopy, we elucidate the local structural changes as a function of cyclic voltammetry cycles. Our studies suggest that the presence of corner-sharing octahedra in the FeO x shell improves structural rigidity through interlayer cross-linking, thereby inhibiting the diffusion of OH - /H 2 O. Thus, the FeO x shell preserves the amorphous NiP x core from rapid oxidation to Ni 3 (PO 4 ) 2 and Ni(OH) 2 . On the other hand, the incorporation of Ni from the core into the FeO x shell facilitates absorption of hydroxide ions for OER. As a result, the Ni/Fe(OH) x at the surface oxidizes to the active γ-(oxy)hydroxide phase under the applied potentials, promoting OER. This intriguing synergistic behavior holds significance as such synthetic route involving the FeO x shell can be extended to other systems, enabling manipulation of surface adsorption and diffusion of hydroxide ions. These findings also demonstrate that nanomaterials with core-shell morphology can be tuned to leverage the strength of each metallic component for improved electrochemical activities.
Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n+p and p+n configurations with total area efficiencies of 17.9 and 15.9% (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AMO efficiency of 20.5% was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 the the 16th power/cu cm respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n+p cells are more radiation resistant at higher fluences than the p+n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.
Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n + p and p + n configurations with total area efficiencies of 17.9 and 15.9 percent (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AM0 efficiency of 20.5 percent was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 to the 16th power/cu cm, respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n + p cells are more radiation resistant at higher fluences than the p + n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.