SEARCH · Search NASA

Results for “phosphide sputtering”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

6 records

All sources NASA NTRS DOE OSTI

NASA NTRS1987

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Coutts, T. J.↗

NASA NTRS1990

Indium phosphide solar cells - Recent developments and estimated performance in space

The current status of indium phosphide solar cell research is reviewed. In the NASA research program, efficiencies of 18.8 percent were achieved for standard n/p homojunction InP cells while 17 percent was achieved for ITO/InP cells processed by sputtering n-type indium tin oxide onto p-type indium phosphide. The latter represents a cheaper, simpler processing alternative. Computer modeling calculations indicate that efficiencies of over 21 percent are feasible. Relatively large area cells are produced in Japan with a maximum efficiency of 16.6 percent.

Weinberg, Irving↗

NASA NTRS1989

High-efficiency indium tin oxide/indium phosphide solar cells

Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

Li, X.↗

NASA NTRS1986

Low-Resistivity Zinc Selenide for Heterojunctions

Magnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.

Stirn, R. J.↗

NASA NTRS1984

Optical and interfacial electronic properties of diamond-like carbon films

Hard, semitransparent carbon films were prepared on oriented polished crystal wafers of silicon, indium phosphide and gallium arsenide, as well as on KBr and quartz. Properties of the films were determined using IR and visible absorption spectrocopy, ellipsometry, conductance-capacitance spectroscopy and alpha particle-proton recoil spectroscopy. Preparation techniques include RF plasma decomposition of methane (and other hydrocarbons), ion beam sputtering, and dual-ion-beam sputter deposition. Optical energy band gaps as large as 2.7 eV and extinction coefficients lower than 0.1 at long wavelengths are found. Electronic state densities at the interface with silicon as low as 10 to the 10th states/eV sq cm per were found.

Woollam, J. A.↗

NASA NTRS1989

Progress in indium phosphide solar cell research

Progress, dating from the start of the Lewis program, is reviewed emphasizing processing techniques which have achieved the highest efficiencies in a given year. To date, the most significant achievement has been attainment of AM0 total area efficiencies approaching 19 percent. Although closed tube diffusion is not considered to be an optimum process, reasonably efficient 2cm x 2cm and 1cm x 2cm InP cells have been produced in quantity by this method with a satellite to be launched in 1990 using these cells. Proton irradiation of these relatively large area cells indicates radiation resistance comparable to that previously reported for smaller InP cells. A similar result is found for the initial proton irradiations of ITO/InP cells processed by D. C. sputtering. With respect to computer modelling, a comparison of n/p homojunction InP and GaAs cells of identical geometries and dopant concentrations has confirmed the superior radiation resistance of InP cells under 1 MeV electron irradiations.

Weinberg, Irving↗