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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Leveraging the redox activities of cerium and dibenzotetrathiafulvalene to discover a photo-responsive magnetic material

Stimuli-responsive changes in lanthanide-based materials are a promising research direction. In this study, [DBTTF] 4 [Ce 2 Cl 10 ] DBTTF = dibenzotetrathiafulvalene (1) was synthesized by a light-induced crystallization, where photo-oxidation of DBTTF enables formation of the cerium dimer [Ce 2 Cl 10 ] 4− . Intermolecular interactions between the stacked organic units of the crystal result in charge transfer bands in the visible-NIR (near-infrared) region, evident in the solid-state absorption spectrum upon comparison with the solution spectrum. The assignments of the sublattice oxidation states were made with single-crystal X-ray diffraction (SC-XRD) structural characterization, Raman spectroscopy, X-ray absorption spectroscopy, and magnetometry. Continuous 532 nm laser irradiation of the microcrystalline solid modulates the redox states in 1, leading to ∼40% reduction in the observed magnetization at 2 K. Density functional theory PBE+U/HSE06 band structure calculations predict Mott insulating behavior in 1, with a bandgap of 0.54/0.81 eV, and further support the conjecture that the observed photo-induced change in magnetization results from electron transfer from the [Ce 2 Cl 10 ] 4− anions to the π-stacked [DBTTF] 2 2+ organic dimer subunits. An enhancement in conductivity is similarly observed upon 532 nm irradiation, determined by single-crystal transport measurements. The findings reveal that photo-responsive lanthanide-based materials can be achieved by integration of redox-active organic moieties with redox-active lanthanide cations for the realization of switchable, photo-magnetic materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Photo response of 164 Dy

Background: Little data is available for the pygmy dipole resonance (PDR) in axially deformed nuclei. Photon-scattering experiments are complicated by high level densities in the PDR region and the small energy difference of transitions to the ground state and to excited states. Purpose: In this work, we report on an experimental study of the low-energy dipole strength distribution of the well-deformed nucleus 164 Dy between 4.0–7.7 MeV. Methods: The low-lying photoresponse of 164 Dy has been investigated using the method of nuclear resonance fluorescence using a quasimonochromatic linearly polarized $\textit{γ}$-ray beam in the energy range of 4.0–7.7 MeV in steps of 0.2 MeV. Results: For excitation energies between 4 MeV and 5 MeV, sufficiently low level densities allow for the identification of individual states, including level energies, reduced transition widths and branching ratios. Energy-averaged mean decay branching ratios, mean population ratios and partial absorption cross sections were determined above 5 MeV up to the neutron-separation threshold at 7.7 MeV. A Lorentzian-shaped enhancement of the partial photo absorption cross section followed by decays back to the ground-state band is found at 6.10(5) MeV with a width of 0.77(23) MeV. A comparison with results from complementary measurements is performed using the framework of the statistical model. Conclusions: The experimental results for the mean population ratios deviate systematically from the statistical model simulation by 30(6)%. However, they are in agreement within one standard deviation of the simulation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Construction of Photo‐Responsive Pd 2 L 4 ‐Type Nanocages based on Feringa's Second‐Generation Motor and Its Guest Binding Ability for C 60

Abstract We present the construction of a M 2 L 4 ‐type metal‐organic nanocage featuring four endohedral Feringa's motor motifs and its adaptive encapsulation towards a C 60 guest molecule. The structure of the cage, though complicated on the 1 H NMR spectrum due to the adoption of mixed ligands, was unambiguously characterized with a combination of ESI‐MS, 2D DOSY, 13 C NMR and particularly the SAXS technique. The molecular motor within the cage demonstrated similar photophysical properties to the uncoordinated one, indicating the motor's function was not compromised when it was anchored in such a confined nanospace. Furthermore, the nanocage showed good guest encapsulation ability towards C 60 , and a guest induced‐fit behavior of the cage was revealed based on the extensive SAXS analysis and molecular dynamics simulation. The adaptive motorized nanocage reported here represents one of the very few examples of integrating individual motors into a discrete nanoconfined system and offers prospects to achieve its non‐equilibrium functions.

Chemistry↗

Photo-response of the $N=Z$ nucleus $^{24}$Mg

The electric E1 and magnetic M1 dipole responses of the N = Z nucleus 24 Mg were investigated in an inelastic photon scattering experiment. The 13.0 MeV electrons, which were used to produce the unpolarised bremsstrahlung in the entrance channel of the 24 Mg(γ,γ') reaction, were delivered by the ELBE accelerator of the Helmholtz-Zentrum Dresden-Rossendorf. The collimated bremsstrahlung photons excited one J π = 1 – , four J π = 1 + , and six J π = 2 + states in 24 Mg. De-excitation γ rays were detected using the four high-purity germanium detectors of the γELBE setup, which is dedicated to nuclear resonance fluorescence experiments. In the energy region up to 13.0 MeV a total B(M1)↑ = 2.7(3) $μ$$^{2}_{N}$ is observed, but this N = Z nucleus exhibits only marginal E1 strength of less than ΣB(E1)↑≤ 0.61 × 10 –3 e 2 fm 2 . The B(Π1, $1$$^{π}_{i}$ → $2$$^{+}_{1}$)/B(Π1,$1$$^{π}_{i}$ → $0$$^{+}_{gs}$) branching ratios in combination with the expected results from the Alaga rules demonstrate that K is a good approximative quantum number for 24 Mg. The use of the known ρ 2 (E0, $0$$^{+}_{2}$ → $0$$^{+}_{gs}$) strength and the measured B(M1,1 + → $0$$^{+}_{2}$)/B(M1,1 + → $0$$^{+}_{gs}$) branching ratio of the 10.712 MeV 1 + level allows, in a two-state mixing model, an extraction of the difference Δ$β$$^{2}_{2}$ between the prolate ground-state structure and shape-coexisting superdeformed structure built upon the 6432-keV $0$$^{+}_{2}$ level.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Radiation Damage and Mitigation by Minority Carrier Injection in InAsSb/AlAsSb Heterojunction Barrier Mid-Wave Infrared Detector

Here, the effects of gamma and proton irradiation, and of forward bias minority carrier injection, on photo-response were investigated for InAsSb/AlAsSb pBn mid-wave infrared (MWIR) detectors with an engineered majority-carrier barrier. Room-temperature gamma irradiation had an insignificant effect on 77 K photo-response. Gamma irradiation at 77 K detector temperature, however, decreased in situ photo-response by 19% after a cumulative dose of ~ 500 krad(Si). Subsequent forward bias minority carrier injection had no effect on photo-response. The 77 K detectors irradiated with 30 MeV protons up to 2 Mrad(Si) had photo-response degraded by up to 70%, but here forward bias minority carrier (hole) injection caused up to 12% recovery that persisted more than 30 min. These results suggest a mitigation strategy for maintaining the photo-response of similar detectors in radiation environments that cause displacement damage defects.

36 MATERIALS SCIENCE↗

Colossal switchable photocurrents in topological Janus transition metal dichalcogenides

Nonlinear optical properties, such as bulk photovoltaic effects, possess great potential in energy harvesting, photodetection, rectification, etc. To enable efficient light–current conversion, materials with strong photo-responsivity are highly desirable. In this work, we predict that monolayer Janus transition metal dichalcogenides (JTMDs) in the 1T' phase possess colossal nonlinear photoconductivity owing to their topological band mixing, strong inversion symmetry breaking, and small electronic bandgap. 1T'JTMDs have inverted bandgaps on the order of 10 meV and are exceptionally responsive to light in the terahertz (THz) range. By first-principles calculations, we reveal that 1T' JTMDs possess shift current (SC) conductivity as large as 2300 nm μA V -2 , equivalent to a photo-responsivity of 2800 mA/W. The circular current (CC) conductivity of 1T' JTMDs is as large as ~10 4 nm μA V -2 . These remarkable photo-responsivities indicate that the 1T' JTMDs can serve as efficient photodetectors in the THz range. We also find that external stimuli such as the in-plane strain and out-of-plane electric field can induce topological phase transitions in 1T' JTMDs and that the SC can abruptly flip their directions. The abrupt change of the nonlinear photocurrent can be used to characterize the topological transition and has potential applications in 2D optomechanics and nonlinear optoelectronics.

Chemistry↗

System and method for computed axial lithography (CAL) for 3D additive manufacturing

In one aspect the present disclosure relates to a system for forming a three dimensional (3D) object from a volume of photo-responsive material contained within a material container. A plurality of optical projection subsystems are adapted to be arranged circumferentially around a material container containing the volume of photo-responsive material, and are controlled by a controller. The optical projection subsystems direct optical projections at a plurality of angles θ through the volume of photo-responsive material. The optical projections are further directed about a z axis extending through the volume of photo-responsive material. The plurality of optical subsystems are further controlled by the controller to provide each of the optical projections with a calculated three-dimensional intensity distribution acting over a fixed temporal exposure period, which is sufficient to at least one of cure or remove selected portions of the volume of photo-responsive material, and leave other portions unmodified, to form a desired 3D part.

Kelly, Brett↗

System and method for computed axial lithography (CAL) for 3D additive manufacturing

In one aspect the present disclosure relates to a system for forming a three dimensional (3D) object from a volume of photo-responsive material contained within a material container. A plurality of optical projection subsystems are adapted to be arranged at least partially circumferentially around a material container containing the volume of photo-responsive material, and are controlled by a controller. The optical projection subsystems direct optical projections at a plurality of angles θ through the volume of photo-responsive material. The optical projections are further directed about a z axis extending through the volume of photo-responsive material. The plurality of optical subsystems are further controlled by the controller to provide each of the optical projections with a calculated three-dimensional intensity distribution acting over a fixed temporal exposure period, which is sufficient to at least one of cure or remove selected portions of the volume of photo-responsive material, and leave other portions unmodified, to form a desired 3D part.

Kelly, Brett↗

System and method for roll-to-roll film tensioning for reduced separation force during bottom-up stereolithography

The present disclosure relates to a tensioning system for use in a stereolithography manufacturing application. The system may have a build plate for supporting a three dimensional part being formed using a photo responsive resin, a base plate and a release element extending over the base plate. The release element is configured to receive a quantity of photo responsive resin for forming a new material layer of the three dimensional part. A pair of tensioning components are secured to opposite ends of the release element, and apply a controlled tension force to the release element during peeling of the release element to reduce a separation force required to separate the release element from the new material layer after the new material layer is cured.

Duoss, Eric B.↗

Time-Resolved Radioluminescence of the Polynuclear Copper(I) Phosphor Cu4I6²–. Different Temporal responses to Photo, X-Ray, β-Ray and α-Particle Excitation

Described for the first time are the time-resolved radioluminescence (TRRL) properties of the highly luminescent copper(I) cluster Cu4I62– using X-ray, b-ray and a-particle excitation. The copper(I) phosphors are two crystalline salts of this anion, [Na2(18-crown-6)2(H2O)3][Cu4I6] (I) and [Li(benzo-15-crown-5)2(H2O)]2[Cu4I6] (II), that had been shown to display strong photoluminescence (PL) when excited with ultraviolet light. The integrated radioluminescence (RL) spectra observed when pulsed X-rays were used as the excitation source are virtually the same as the PL spectra under comparable conditions. These temporal RL spectra are invariant at all observation times indicating that the observed scintillation occurs from a common excited state (or set of excited states). When the TRRL is collected from excitation with a pulsed X-ray source, b-ray decay from 90Sr or a-decay from 244Cm, the longer components (>2 μs) of the TRRL displayed (in each case) lifetimes comparable to those of the strictly exponential PL decays recorded under pulsed laser UV excitation. However, at shorter observation times (< 500 ns), the RL decay deviated from the exponential model, indicating a markedly different temporal luminescence behavior when these materials were excited with pulsed high energy radiation. Furthermore, this effect was the most pronounced for the a-particle excitation. These results suggest that the absorption of a very high energy X-ray photon, b-ray or a-particle at a site within the crystalline solid leads to a high local density of electronic excited states and that coupling between these states provides an alternative channel for excited state decay. Given that the patterns observed

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Time-Resolved Radioluminescence of the Copper(I) Cluster Cu4I62-. Temporal responses to Photo, X-ray, Beta-ray, and alpha-ray Excitation.

Described are time-resolved radioluminescence (TRRL) properties of the Cu(I) cluster Cu4I62– upon pulsed X-ray, β-ray or α-particle excitation. The longer (>2 μs) TRRL component displayed exponential decay comparable to pulsed UV excitation; however, temporal behavior at shorter times indicates that high local excited state density provides an alternative decay channel.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Strain-engineered high-responsivity MoTe 2 photodetector for silicon photonic integrated circuits

In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically relevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide materials due to their large optical bandgap. Furthermore, we demonstrate a MoTe 2 -based photodetector featuring strong photoresponse (responsivity = 0.5 A/W -1 ) operating at 1550 nm in silicon photonics enabled by strain engineering the 2D material. Non-planarized waveguide structures show a locally-induced bandgap change of 0.2 eV inside MoTe 2 , resulting in large photo-response, in an otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this photodetector shows a ~100X improved dark current, enabling an efficient noise equivalent power of 90 pW/Hz -0.5 . Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.

47 OTHER INSTRUMENTATION↗

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS 2 Field-Effect Transistors at Low Temperatures

Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS 2 FETs, synthesized using the mechanical exfoliation of bulk MoS 2 crystal, on the Si/SiO 2 substrate. Our MoS 2 FET show a room-temperature field-effect mobility μ FE ~40 cm 2 ·V -1 ·s -1 , which increases with decreasing temperature, stabilizing at 80 cm 2 ·V -1 ·s -1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, P eff (0.02 μW < P eff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW -1 , and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS 2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.

2D materials↗

Photogating-driven enhanced responsivity in a few-layered ReSe 2 phototransistor

A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoconductors is associated with trap state dynamics leading to a photogating effect, which is often manifested by a fractional power dependence (γ) of the photocurrent (I ph ) at an effective illumination intensity (P eff ). Furthermore, we present photoconductivity studies as a function of gate voltages, over a wide temperature range (20 K to 300 K) of field-effect transistors fabricated using thin layers of mechanically exfoliated Rhenium Diselenide (ReSe 2 ). We obtain very high responsivities R ~ 16500 A/W and external quantum efficiency (EQE) ~ 3.2 × 106% (at 140 K, V g = 60 V and P eff = 0.2 nW). A strong correlation between R and γ was established by investigating the dependence of these two quantities at various gate voltages and over a wide range of temperatures. Such correlations indicate the importance of trap state mediated photogating and its role in promoting high photo-responsivities in these materials. We believe such correlations can offer valuable insights for the design and development of high-performance photoactive devices using 2D materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Chirality transfer from chiral perovskite to molecular dopants via charge transfer states

Chiral perovskites are semiconductors with broken mirror symmetries. Their photo responses are often constrained in the UV range. In this work, we demonstrate that doping 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane in the chiral perovskite matrix introduces a visible light absorption feature through the emerging charge-transfer electronic states. These charge-transfer states exhibits circular dichroism inherited from the chiral host, indicating effective chirality transfer from host to guest component via electronic coupling. Quantum-chemical modeling identifies a strong wave function overlap between an electron and a hole of the guest-host in a closely packed crystal configuration promoting the charge transfer state’s optical activity. We further integrate the doped chiral perovskite film into photodetectors and demonstrate a selective detection of circularly polarized light in both UV and visible regions. Our results suggest a universal approach of introducing visible photo absorption states to the chiral matrix to broaden the optical active range while enhancing the electrical conductivity.

36 MATERIALS SCIENCE↗