Search NASA⌕ Search

SEARCH · Search NASA

Results for “photocathode”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Quantum efficiencies of imaging detectors with alkali halide photocathodes. I - Microchannel plates with separate and integral CsI photocathodes

Measurements and comparisons have been made of the quantum efficiencies of microchannel plate (MCP) detectors in the far-UV (below 2000-A) wavelength range using CsI photocathodes (a) deposited on the front surfaces of microchannel plates and (b) deposited on solid substrates as opaque photocathodes with the resulting photoelectrons input to microchannel plates. The efficiences were measured in both pulse-counting and photodiode modes of operation. Typical efficiencies are about 15 percent at 1216 A for a CsI-coated MCP compared with 65 percent for an opaque CsI photocathode MCP detector. Special processing has yielded an efficiency as high as 20 percent for a CsI-coated MCP. This may possibly be further improved by optimization of the tilt angle of the MCP channels relative to the front face of the MCP and incident radiation. However, at present there still remains a factor of at least 3 quantum efficiency advantage in the separate opaque CsI photocathode configuration.

Carruthers, George R.↗
DOE OSTI2025

Improved robustness of sequentially deposited potassium cesium antimonide photocathodes achieved by increasing the potassium content towards theoretical stoichiometry

Alkali antimonide semiconductor photocathodes are promising candidates for high-brightness electron sources for advanced accelerators, including free-electron lasers (FEL), due to their high quantum efficiency (QE), low emittance, and high temporal resolution. Two challenges with these photocathodes are (1) the lack of a universal deposition recipe to achieve crystal stoichiometries and (2) their high susceptibility to vacuum contamination, which restricts their operation pressure to ultrahigh vacuums and leads to a short lifetime and low extraction charge. To resolve these issues, it is essential to understand the elemental compositions of deposited photocathodes and correlate them to robustness. Here, we report depth profiles for potassium cesium antimonide photocathodes, which were investigated using synchrotron radiation x-ray photoelectron spectroscopy, and the robustness of those photocathodes. We prepared two types of photocathodes with different potassium contents via sequential thermal evaporation. Depth profiles revealed that the photocathodes with a potassium deficit had excess cesium at the surface, while the ratio of potassium and cesium to antimony decreased rapidly within the film. In contrast, the photocathodes with sufficient potassium had close to the theoretical stoichiometry of K 2 CsSb at the surface and maintained that stoichiometry for over half the entire film thickness. Both photocathode types had a similar maximum QE at 532 nm; however, exposure to oxygen revealed that the photocathode with a crystalline stoichiometry of K 2 CsSb maintained QE at one order of magnitude higher pressure compared to its potassium-deficit counterpart. These results highlight the importance of synthesizing potassium cesium antimonide photocathodes with sufficient potassium to achieve the theoretical crystalline stoichiometry for both high QE and improved robustness.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

A novel diamond-like carbon based photocathode for PICOSEC Micromegas detectors

The PICOSEC Micromegas (MM) detector is a precise timinggaseous detector based on a MM detector operating in a two-stageamplification mode and a Cherenkov radiator. Prototypes equippedwith cesium iodide (CsI) photocathodes have shown promising timeresolutions as precise as 24 picoseconds (ps) for Minimum IonizingParticles. However, due to the high hygroscopicity andsusceptibility to ion bombardment of the CsI photocathodes,alternative photocathode materials are needed to improve therobustness of PICOSEC MM. Diamond-like Carbon (DLC) film have beenintroduced as a novel robust photocathode material, which have shownpromising results. A batch of DLC photocathodes with differentthicknesses were produced and evaluated using ultraviolet light. Thequantum efficiency measurements indicate that the optimizedthickness of the DLC photocathode is approximately3 nm. Furthermore, DLC photocathodes show good resistance to ionbombardment in aging test compared to the CsI photocathode. Finally,a PICOSEC MM prototype equipped with DLC photocathodes was tested inmuon beams. A time resolution of around 42 ps with a detectionefficiency of 97% for 150 GeV/c muons were obtained. These resultsindicate the great potential of DLC as a photocathode for thePICOSEC MM detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2011

Piezoelectrically Enhanced Photocathodes

Doping of photocathodes with materials that have large piezoelectric coefficients has been proposed as an alternative means of increasing the desired photoemission of electrons. Treating cathode materials to increase emission of electrons is called "activation" in the art. It has been common practice to activate photocathodes by depositing thin layers of suitable metals (usually, cesium). Because cesium is unstable in air, fabrication of cesiated photocathodes and devices that contain them must be performed in sealed tubes under vacuum. It is difficult and costly to perform fabrication processes in enclosed, evacuated spaces. The proposed piezoelectrically enhanced photocathodes would have electron-emission properties similar to those of cesiated photocathodes but would be stable in air, and therefore could be fabricated more easily and at lower cost. Candidate photocathodes include nitrides of elements in column III of the periodic table . especially compounds of the general formula Al(x)Ga(1.x)N (where 0< or = x < or =.1). These compounds have high piezoelectric coefficients and are suitable for obtaining response to ultraviolet light. Fabrication of a photocathode according to the proposal would include inducement of strain in cathode layers during growth of the layers on a substrate. The strain would be induced by exploiting structural mismatches among the various constituent materials of the cathode. Because of the piezoelectric effect in this material, the strain would give rise to strong electric fields that, in turn, would give rise to a high concentration of charge near the surface. Examples of devices in which piezoelectrically enhanced photocathodes could be used include microchannel plates, electron- bombarded charge-coupled devices, image tubes, and night-vision goggles. Piezoelectrically enhanced photocathode materials could also be used in making highly efficient monolithic photodetectors. Highly efficient and stable piezoelectrically enhanced, ultraviolet-sensitive photocathodes and photodetectors could be fabricated by use of novel techniques for growing piezoelectrically enhanced layers, in conjunction with thinning and dopant-selective etching techniques.

Beach, Robert A.↗
DOE OSTI2026

Design, development and commissioning of a multi-alkali semiconductor photocathode deposition system for the IUAC Delhi light source photoinjector

A fourth-generation light source, called Delhi Light Source (DLS) based on photocathode-based RF gun has been commissioned at Inter-University Accelerator Centre, New Delhi. Presently, the electron beam is being generated from copper photocathode and the beam is being used for scheduled experiments. Soon, the semiconductor photocathode will be used to produce higher beam current. Here, to develop the semiconductor photocathode, a dedicated photocathode deposition facility was developed in collaboration with Brookhaven national Laboratory (BNL) and has been successfully commissioned and becomes operational at IUAC. This deposition facility is an integrated system with the electron gun and is a unique system as it is capable of producing, preserving (without residual gas poisoning) and in-vacuum transfer of the deposited photocathodes from the deposition chamber up to the RF electron gun. The system is designed to operate under ultra-high vacuum (UHV) and is equipped with load-lock chambers, substrate heating assembly, thickness monitoring via a quartz crystal microbalance (QCM), and an in-situ setup for quantum efficiency (QE) measurements. After testing of all the subsystems and a detailed calibration, the first deposition of a cesium telluride (Cs 2 Te) photocathode was successfully performed on a copper (Cu) substrate. This successful commissioning and initial deposition mark a significant step toward the indigenous photocathode development and lays the groundwork for further research into advanced photo emissive materials at IUAC. This paper will discuss the salient features, installation, commissioning, first semiconductor photocathode deposition and its results.

47 OTHER INSTRUMENTATION↗
NASA NTRS1973

Photocathodes for use in the large space telescope program

Photocathode materials are discussed in terms of those that are presently available and those that are becoming available. Charts are given which illustrate the response curves of the representative photocathodes. It can be seen from the curves that a relatively new class of photocathodes has been developed with responses equal to or much better than commercially available photocathodes over a very wide spectral range. In particular, the solid gallium arsenide photocathode has an increased efficiency over the standard S-1 in the infrared region of almost two orders of magnitude. A table is presented which describes the principle photocathodes and lists some of the important characteristics of each.

Spicer, W. E.↗
NASA NTRS1989

Low temperature multi-alkali photocathode processing technique for sealed intensified CCD tubes

A low temperature photocathode process has been used to fabricate an intensified CCD visual photocathode image tube, by incorporating a thinned, backside-illumined CCD as the target anode of a digicon tube of Hubble Space Telescope (HST) design. The CCD digicon tube employs the HST's sodium bialkali photocathode and MgF2 substrate, thereby allowing a direct photocathode quantum efficiency comparison between photocathodes produced by the presently employed low temperature process and those of the conventional high temperature process. Attention is given to the processing chamber used, as well as the details of gas desorption and photocathode processing.

Doliber, D. L.↗
DOE OSTI2025

Single layer graphene protective layer on GaAs photocathodes for spin-polarized electron source

GaAs-based photocathodes are the primary choice for polarized electron sources, commonly used in polarized electron microscopes and polarized positron sources. GaAs photocathodes are typically activated with cesium and oxygen, which are highly reactive and require an ultra-high vacuum (⁠~ 10 -11 Torr or lower) to operate reliably, resulting in substantial operational difficulties. A short exposure to a mediocre vacuum results in an instantaneous loss of cathode quantum efficiency (QE) due to the chemical reaction of the active layer with residual gas molecules or back-bombardment ions during operation. Covering the GaAs cathode with a 2D material, such as monolayer graphene, could provide protection against such damage due to the inhibition of chemical reactions with residual gas molecules. In this paper, we have incorporated a method known as intercalation to pass the active material underneath the graphene and activate the superlattice GaAs/GaAsP (SL-GaAs) photocathode. X-ray photoelectron spectroscopy, low-energy electron microscopy, and Mott scattering measurements were performed to evaluate the formation of the photocathode under graphene, as well as its spectral response and electron spin polarization. Our results demonstrate that the successful activation of the SL-GaAs photocathode with a graphene protection layer is achieved with a moderate QE. Furthermore, we found that the electron spin polarization of the cathode with a surface protection layer is higher than the conventional cathode without a protection layer.

2D materials↗
DOE OSTI2023

Plasma Photocathodes

Abstract Plasma wakefield accelerators offer accelerating and focusing electric fields three to four orders of magnitude larger than state‐of‐the‐art radiofrequency cavity‐based accelerators. Plasma photocathodes can release ultracold electron populations within such plasma waves and thus open a path toward tunable production of well‐defined, compact electron beams with normalized emittance and brightness many orders of magnitude better than state‐of‐the‐art. Such beams will have far‐reaching impact for applications such as light sources, but also open up new vistas on high energy and high field physics. This paper reviews the innovation of plasma photocathodes, and reports on the experimental progress, challenges, and future prospects of the approach. Details of the proof‐of‐concept demonstration of a plasma photocathode in 90° geometry at SLAC FACET within the E‐210: Trojan Horse program are described. Using this experience, alongside theoretical and simulation‐supported advances, an outlook is given on future realizations of plasma photocathodes such as the upcoming E‐310: Trojan Horse‐II program at FACET‐II with prospects toward excellent witness beam parameter quality, tunability, and stability. Future installations of plasma photocathodes also at compact, hybrid plasma wakefield accelerators, will then boost capacities and open up novel capabilities for experiments at the forefront of interaction of high brightness electron and photon beams.

Habib, Ahmad Fahim↗
DOE OSTI2023

TaO x electron transport layers for CO 2 reduction Si photocathodes

Electron transport layers (ETLs) used as components of photocathodes for light-driven CO 2 reduction (CO 2 R) in aqueous media should have good electronic transport, be stable under CO 2 R conditions, and, ideally, be catalytically inert for the competing hydrogen evolution reaction (HER). Here, using planar p-Si (100) as the absorbing material, we show that TaO x satisfies all three of the above criteria. TaO x films were synthesized by both pulsed laser deposition (PLD) and radio-frequency (RF) sputtering. In both cases, careful control of the oxygen partial pressure during growth was required to produce ETLs with acceptable electron conductivity. p-Si/TaO x photocathodes were interfaced with ca. 10 nm of a CO 2 R catalyst: Cu or Au. Under front illumination with simulated AM 1.5G in CO 2 -saturated bicarbonate buffer, we observed, for both metals, faradaic efficiencies for CO 2 R products of ~50% and ~30% for PLD TaO x and RF sputtered TaO x , respectively, at photocurrent densities up to 8 mA cm -2 . p-Si/TiO 2 /Cu photocathodes were also evaluated but produced mostly H 2 (>97%) due to reduction of the TiO 2 to Ti metal under CO 2 R conditions. In contrast, a dual ETL photocathode (p-Si/TiO 2 /TaO x /Cu) was selective for CO 2 R, which suggests a strategy for separately optimizing selective charge collection and the stability of the ETL/water interface. The maximum photovoltage obtained with p-Si/TaO x /Cu devices was 300 mV which was increased to 430–460 mV by employing ion implantation to make pn + -Si/TaO x /Cu structures. Photocathodes with RF sputtered TaO x ETLs are stable for CO 2 R for at least 300 min. In conclusion, techno-economic analysis shows that the reported system, if scaled, could allow for an economically viable production of feedstocks for chemical synthesis under the adoption of specific CO 2 credit schemes, thus becoming a significant component of carbon-neutral manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A cryogenically cooled 200 kV DC photoemission electron gun for ultralow emittance photocathodes

Novel photocathode materials like ordered surfaces of single crystal metals, epitaxially grown high quantum efficiency thin films, and topologically non-trivial materials with dirac cones show great promise for generating brighter electron beams for various accelerator and ultrafast electron scattering applications. Despite several materials being identified as brighter photocathodes, none of them have been tested in electron guns to extract electron beams due to technical and logistical challenges. In this paper, we present the design and commissioning of a cryocooled 200 kV DC electron gun that is capable of testing a wide variety of novel photocathode materials over a broad range of temperatures from 298 to 35 K for bright electron beam generation. This gun is designed to enable easy transfer of the photocathode to various standard ultra-high-vacuum surface diagnostics and preparation techniques, allowing a full characterization of the dependence of beam brightness on the photocathode material and surface properties. We demonstrate the development of such a high-voltage, high-gradient gun using materials and equipment that are easily available in any standard university lab, making the development of such 200 kV electron guns more accessible.

Instruments & Instrumentation↗
DOE OSTI2023

Strained Superlattice photocathode development using CBE and MBE

High polarization electron beams for accelerators are generated using strained superlattice GaAs-based photocathodes. A collaboration of researchers at University of California Santa Barbara and Jefferson Lab has been investigating growth of SSL photocathodes using either chemical- or molecular-beam epitaxy (CBE or MBE) to re-establish a source of high polarization photocathode material. While calibrating growth parameters for the now standard GaAs/GaAsP strained superlattice structure, the UCSB personnel encountered the drawbacks of growing structures with phosphorus in a MBE or CBE system, including high vapor pressure byproducts, phosphorus contamination in both the GaAs layer and all subsequent materials grown in that chamber, and highly flammable and toxic chamber residues. For these reasons, the UCSB team began additionally investigating strained superlattices of InAlGaAs/AlGaAs, which has been successfully demonstrated in the literature1, to be a high QE, high polarization photocathode material. For GaAs/GaAsP, varying phosphorus content affects both the band gap and polarization. However for InAlGaAs/AlGaAs, In and Al content can be varied independently and allows optimization of both polarization and bandgap. Several variations on InAlGaAs/AlGaAs superlattice photocathodes, including those with distributed Bragg reflector (DBR) structures to enhance QE, have been grown at UCSB and sent to Jefferson Lab for testing. The initial results are quite promising, with polarization over 80% and QE about 0.3%, and ongoing test results will be presented.

Stutzman, Marcy↗
DOE OSTI2025

Polarized Photocathodes development for the EIC: Optimizing Spin and Quantum Efficiency

GaAs/GaAsP superlattice photocathodes play a critical role for producing highly polarized electron beams for the Electron-Ion Collider (EIC) at Brookhaven National Laboratory. The electron pre-injector for the EIC requires electron bunches with high bunch charge (1-2 nC) and high polarization, from GaAs-based superlattice photocathode. Herein, we have systematically investigated a range of GaAs/GaAsP superlattice photocathodes fabricated via molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Through optimization of pre-cleaning procedures and surface doping conditions, we aim to identify the most promising photocathode configurations for future EIC operations. To enhance the quantum efficiency (QE), a Distributed Bragg Reflector structure is frequently incorporated beneath the superlattice. While this approach effectively increases QE, it also introduces additional complexities that can adversely influence spin polarization and the spectral response at specific laser wavelengths. This note provides an overview of superlattice GaAs development and outlines the EIC team’s ongoing efforts to address related challenges and advance high-performance photocathode development tailored for the EIC. Over five years of multi-institutional collaboration and measurements of about 50 SL-GaAs samples, our analysis presents statistics on samples exhibiting high ESP and high QE. It will help to set the initial ESP requirements for the EIC project.

43 PARTICLE ACCELERATORS↗
NASA NTRS2002

Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

Leopold, Daniel J.↗
DOE OSTI2023

Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

Photocathodes based on GaAs and other III–V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath. This configuration creates a Fabry–Pérot cavity between the DBR and GaAs surface, which enhances the absorption of incident light and, consequently, the QE. These photocathode structures were grown using molecular beam epitaxy and achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Effect of activation temperature on quantum efficiency and lifetime of NEA truncated nanocone array GaAs photocathode

This study investigates the quantum efficiency (QE) and operational lifetime of a negative electron affinity GaAs truncated nanocone array (TNCA) photocathode benchmarked against a conventional flat GaAs photocathode under varying activation temperatures. The TNCA structure demonstrated a QE of up to 13.6% at 590 nm with room temperature (RT) activation—approximately 1.5 times higher than its flat counterpart. This enhancement is due to Mie resonance effects within the nanostructure, as confirmed by finite-difference time-domain simulations. Moreover, the TNCA photocathode exhibits significantly extended charge lifetime, with enhancement factors of ∼6.1 and ∼19.8 under RT and 50 °C activations, respectively. These gains are primarily attributed to increased effective surface area and optimized dipole layer formation at elevated temperatures. In addition, shorter excitation wavelengths further contribute to lifetime improvements. These findings underscore the TNCA GaAs photocathode’s potential as a high QE, long lifetime electron source for many large-scale electron accelerators.

Cs-NF3 activation↗
DOE OSTI2025

Enhancing the Design of Photocathodes with 90% polarization and QE > 1% for DOE NP (Final Report)

This project’s 3 major goals were the following: 1. Fabricate state-of-the-art spin-polarized photocathodes using MOCVD and develop knowledge of fabrication parameters. 2. Enhance the design of 2 structures of spin-polarized photocathodes (strained-superlattice and strained-superlattice with distributed Bragg reflector) to assess paths to the next generation of spin-polarized photocathodes. 3. Provide a supply of state-of-the-art spin-polarized photocathodes to both Brookhaven National Laboratory and the Thomas Jefferson National Accelerator Facility.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Franck-Condon electron emission from polar semiconductor photocathodes

An analytical formulation of (optical-)phonon-mediated and momentum-resonant Franck-Condon emission of photoexcited electrons from polar semiconductors is shown to be very consistent with (i) the observed emission properties of a cesiated Ga⁢As⁢(001) photocathode at 808 nm [J. Phys. D: Appl. Phys. 54, 205301 (2021)] and (ii) the measured spectral emission properties of a Ga⁢N(0001) photocathode from just below its bandgap energy to 5 eV. The theoretical analysis in the parabolic band approximation predicts the form of both the quantum efficiency and mean transverse energy of photoemission as a function of the photocathode’s electron affinity and the electron temperature in the vicinity of its emission face. The good agreement between theory and experimental data also suggests that sub-10-nm rms surface roughness effects are not significant for polar semiconductor photocathodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗