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At least 19 records

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NASA NTRS1992

Evaluation of high quantum efficiency silicon photodiodes for calibration in the 400 nm to 900 nm spectral region

The reflectance and internal quantum efficiency (QE) of three single-element photodiodes are determined using two different light-trapping devices. The QED-200 light trapping device which is based on inversion layer photodiodes exhibits the best performance within the short wavelengths of the visible spectrum (VIS), while the A-O device based on p-n photodiodes, performs best in the long wave VIS up to 950 nm. The combination of the two light-traps provides nearly 100 percent external QE coverage from 400 to 950 nm. The reflectances and internal QE were determined within this spectral range for three photodiodes: UV100, an inversion layer photodiode; X-UV100, a shallow diffused n-p photodiode; and 10DPI/SB, a blue-enhanced p-n photodiode.

Jorquera, Carlos↗

DOE OSTI2022

Radiation testing of 2.4 micron wavelength extended InGaAs photodiodes for 100 MeV/n carbon ions

We have successfully tested simultaneously 2.4 Micron Wavelength, Extended InGaAs Photodiodes having diameters of 20, 30, 40, 50, 100, 150, 200, 250, and 290 Micron, coupled with a Single Mode Fiber using 100 MeV/n Carbon (C) Ions up to a cumulative dose of ~40 krad. During irradiation, the devices were maintained at dry ice temperature, reverse biased at 100 mV, and their leakage current was continuously monitored in-situ during the run. After the exposure was completed, all nine devices were monitored for any change in their leakage current at 100 mV and room temperature for several weeks to monitor any annealing effects that may occur. Nine Photodiodes with the above varying diameters were radiated with 100 MeV/n Carbon Ions with a fluence of 10 6 , 10 7 , 10 8 , 10 9 , and 10 10 ions/cm 2 at each fluence level. At 100 MeV/n the Linear Energy Transfer (LET) of Carbon Ion is ~0.156 MeV-cm 2 /mg in Extended InGaAs, which is an order magnitude more than Proton (H) and Helium (He) Ions of 100 MeV/n energy. Thus, significant displacement damage is anticipated in the Extended InGaAs Photodiode with 100 MeV/n Carbon Ions with a total fluence of 1 × 1010 ions/cm 2 . Pre- and Post- radiation results were also measured for: (1) Leakage Current Vs. Voltage for the Extended InGaAs Photodiodes; (2) Responsivity (Quantum Efficiency) in A/W for Photodiodes; and (3) Bandwidth of the Photodiodes. All devices were found to be fully functional at the normal operating conditions and at both dry ice and room temperature. The leakage current increased up to a factor of ~2X at lower bias of 100 mV at the highest fluence of 10 10 ions/cm 2 , but not significantly at higher bias of 2 V. Finally, we did not observe any post radiation annealing effect for leakage current at room temperature and 100 mV bias for any of the devices after several weeks of data logging.

2.4 micron wavelength↗

DOE OSTI2020

Large-area low-noise flexible organic photodiodes for detecting faint visible light

Silicon photodiodes are the foundation of light-detection technology; yet their rigid structure and limited area scaling at low cost hamper their use in several emerging applications. A detailed methodology for the characterization of organic photodiodes based on polymeric bulk heterojunctions reveals the influence that charge-collecting electrodes have on the electronic noise at low frequency. The performance of optimized organic photodiodes is found to rival that of low-noise silicon photodiodes in all metrics within the visible spectral range, except response time, which is still video-rate compatible. Solution-processed organic photodiodes offer several design opportunities exemplified in a biometric monitoring application that uses ring-shaped, large-area, flexible, organic photodiodes with silicon-level performance.

47 OTHER INSTRUMENTATION↗

NASA NTRS2004

Photodiode-Based, Passive Ultraviolet Dosimeters

Simple, passive instruments have been developed for measuring the exposure of material specimens to vacuum ultraviolet (VUV) radiation from the Sun. Each instrument contains a silicon photodiode and a coulometer. The photocharge generated in the photodiode is stored in the coulometer. The accumulated electric charge measured by use of the coulometer is assumed to be proportional to the cumulative dose of VUV radiation expressed in such convenient units as equivalent Sun hours (ESH) [defined as the number of hours of exposure to sunlight at normal incidence]. Intended originally for use aboard spacecraft, these instruments could also be adapted to such terrestrial uses as monitoring the curing of ultraviolet-curable epoxies. Each instrument includes a photodiode and a coulometer assembly mounted on an interface plate (see figure). The photodiode assembly includes an aluminum housing that holds the photodiode, a poly(tetrafluoroehylene) cosine receptor, and a narrow-band optical filter. The cosine receptor ensures that the angular response of the instrument approximates the ideal angular response (proportional to the cosine of the angle of incidence). The filter is chosen to pass the ultraviolet wavelength of interest in a specific experiment. The photodiode is electrically connected to the coulometer. The factor of proportionality between the charge stored in the coulometer and ultraviolet dosage (in units of ESH) is established, prior to use, in calibration experiments that involve the use of lamps and current sources traceable to the National Institute of Standards and Technology.

Vaughn, Jason A.↗

DOE OSTI2024

Evaluation of silicon and indium gallium arsenide photodiodes as direct timing detectors for pulsed x-ray systems

Benchtop pulsed x-ray systems are commonly used to record dynamic material data on the order of nanoseconds, but pulse timing is often difficult to accurately determine. This study demonstrates that commercially available photodiodes can be used effectively for direct x-ray pulse detection without the need for visible light scintillators. X-ray pulses from four commercially available flash x-ray systems were quantified using one silicon and two indium gallium arsenide (InGaAs) photodiodes. The measured InGaAs pulse durations were strongly dependent on radiation dose in the non-linear operating regime, so the photodiodes were shielded to operate below the 2.5 V non-linear regime threshold. The average pulse duration and pulse arrival time jitter of the photodiodes for each x-ray source were within several nanoseconds with the exception of two sets of measurements that were affected by low instrument sensitivity and electrical noise. These results show that InGaAs photodiodes can be used as effective and repeatable stand-alone timing diagnostics for x-ray pulses as short as 20 ns or less.

47 OTHER INSTRUMENTATION↗

DOE OSTI2021

Single Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes

Pulsed-laser induced single event current measurements on two geometries of waveguide-integrated germanium photodiodes were conducted over a range of operating voltages to examine the impact of photodiode geometry on the transient response. Vertical PIN photodiodes exhibit transients with a duration that is relatively independent of the operating voltage while the transient duration in lateral PIN photodiodes depends on operating voltage. Furthermore, the experimental measurements facilitate identification of device dimensions that impact the transient response. In this work, these results can be used to identify potential radiation mitigation strategies for photodiodes operating in a radiation environment. Understanding the implications of design choices is critical for designing integrated photonic systems that balance system performance with tolerance for radiation degradation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

NASA NTRS2017

Aerosol Optical Depth as Observed by the Mars Science Laboratory REMS UV Photodiodes

Systematic observations taken by the REMS UV photodiodes on a daily basis throughout the landed Mars Science Laboratory mission provide a highly useful tool for characterizing aerosols above Gale Crater. Radiative transfer modeling is used to model the approximately two Mars Years of observations taken to date taking into account multiple scattering from aerosols and the extended field of view of the REMS UV photodiodes. The retrievals show in detail the annual cycle of aerosol optical depth, which is punctuated with numerous short timescale events of increased optical depth. Dust deposition onto the photodiodes is accounted for by comparison with aerosol optical depth derived from direct imaging of the Sun by Mastcam. The effect of dust on the photodiodes is noticeable, but does not dominate the signal. Cleaning of dust from the photodiodes was observed in the season around Ls=270deg, but not during other seasons. Systematic deviations in the residuals from the retrieval fit are indicative of changes in aerosol effective particle size, with larger particles present during periods of increased optical depth. This seasonal dependence of aerosol particle size is expected as dust activity injects larger particles into the air, while larger aerosols settle out of the atmosphere more quickly leading to a smaller average particle size over time. A full description of these observations, the retrieval algorithm, and the results can be found in Smith et al. (2016).

Aerosol↗

NASA NTRS1988

Stable, high quantum efficiency silicon photodiodes for vacuum-UV applications

Silicon photodiodes have been developed by defect-free phosphorus diffusion having practically no carrier recombination at the SiSiO2 interface or in the front diffused region. The quantum efficiency of these photodiodes was found to be around 120 percent at 100 nm. Unlike the previously tested silicon photodiodes, the developed photodiodes exhibit extremely stable quantum efficiency over extended periods of time. The possibility of using these photodiodes as vacuum ultraviolet detector standards is being currently investigated.

Korde, Raj↗

NASA NTRS2005

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

Zheng, Xinyu↗

NASA NTRS2016

Aerosol Optical Depth as Observed by the Mars Science Laboratory REMS UV Photodiodes

Systematic observations taken by the REMS (Rover Environmental Monitoring Station) UV (ultraviolet) photodiodes on a daily basis throughout the landed Mars Science Laboratory mission provide a highly useful tool for characterizing aerosols above Gale Crater. Radiative transfer modeling is used to model the approximately 1.75 Mars Years of observations taken to date taking into account multiple scattering from aerosols and the extended field of view of the REMS UV photodiodes. The retrievals show in detail the annual cycle of aerosol optical depth, which is punctuated with numerous short timescale events of increased optical depth. Dust deposition onto the photodiodes is accounted for by comparison with aerosol optical depth derived from direct imaging of the Sun by Mastcam. The effect of dust on the photodiodes is noticeable, but does not dominate the signal. Cleaning of dust from the photodiodes was observed in the season around solar longitude (Ls) equal to 270 degrees, but not during other seasons. Systematic deviations in the residuals from the retrieval fit are indicative of changes in aerosol effective particle size, with larger particles present during periods of increased optical depth. This seasonal dependence of aerosol particle size is expected as dust activity injects larger particles into the air, while larger aerosols settle out of the atmosphere more quickly leading to a smaller average particle size over time.

Smith, Michael D.↗

DOE OSTI2022

Photodiode-based machine learning for optimization of laser powder bed fusion parameters in complex geometries

We report the quality of parts produced through laser powder bed fusion additive manufacturing can be irregular, with complex geometries sometimes exhibiting dimensional inaccuracies and defects. For optimal part quality, laser process parameters should be selected carefully prior to printing and adjusted during the print if necessary. This is challenging since approaches to control and optimize the build parameters need to take into account the part geometry, the material, and the complex physics of laser powder bed fusion. This work describes a data-driven approach using experimental diagnostics for the optimization of laser process parameters prior to printing. A training dataset is generated by collecting high speed photodiode signal data while printing simple parts containing key geometry features with various process parameter strategies. Supervised learning approaches are employed to train both a forward model and an inverse model. The forward model takes as inputs track-wise geometry features and laser parameters and outputs the photodiode signal along the scan path. The inverse model takes as inputs the geometry features and photodiode signal and predicts the laser parameters. Given the part geometry and a desired photodiode signal, the inverse model can thus determine the required laser parameters. Two test parts which contain defect-prone features are used to assess the validity of the inverse model. The use of the model leads to improved part quality (higher dimensional accuracy, reduced dross, reduced distortion) for both test geometries.

36 MATERIALS SCIENCE↗

NASA NTRS1980

Comparative performance of HgCdTe photodiodes for heterodyne application

The use of photodiodes as optical photomixers in laser heterodyne spectroscopy systems is discussed. The quantum efficiency of the photodiodes is reported with the emphasis on its effect on the system's signal to noise ratio. The measurement techniques used to determine photodiode dc and heterodyne quantum efficiencies are described. The theory behind the measurements as well as actual measurements data for two HgCdTe photodiodes are presented.

Kowitz, H. R.↗

NASA NTRS2007

Increasing the dynamic range of CMOS photodiode imagers

A multiple-step reset process and circuit for resetting a voltage stored on a photodiode of an imaging device. A first stage of the reset occurs while a source and a drain of a pixel source-follower transistor are held at ground potential and the photodiode and a gate of the pixel source-follower transistor are charged to an initial reset voltage having potential less that of a supply voltage. A second stage of the reset occurs after the initial reset voltage is stored on the photodiode and the gate of the pixel source-follower transistor and the source and drain voltages of the pixel source-follower transistor are released from ground potential thereby allowing the source and drain voltages of the pixel source-follower transistor to assume ordinary values above ground potential and resulting in a capacitive feed-through effect that increases the voltage on the photodiode to a value greater than the initial reset voltage.

Pain, Bedabrata↗

NASA NTRS2011

Nano-multiplication region avalanche photodiodes and arrays

An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

Zheng, Xinyu↗

DOE OSTI2023

Stretchable Photodiodes with Polymer-Engineered Semiconductor Nanowires for Wearable Photoplethysmography

Healthcare systems worldwide have been stressed to provide sufficient resources to serve the increasing and aging population in our society. The situation became more challenging at the time of pandemic. Technology advancement, especially the adoption of wearable health monitoring devices, has provided an important supplement to current clinical equipment. Most health monitoring devices are rigid, however, human tissues are soft. Such a difference has prohibited intimate contact between the two and jeopardized wearing comfortableness, which hurdles measurement accuracy especially during longtime usage. Here, in this work, we report a soft and stretchable photodiode that can conformally adhere onto the human body without any pressure and measure cardiovascular variables for an extended period with higher reliability than commercial devices. The photodiode used a composite light absorber consisting of an organic bulk heterojunction embedded into an elastic polymer matrix. It is discovered that the elastic polymer matrix not only improves the morphology of the bulk heterojunction for obtaining the desired mechanical properties but also alters its electronic band structure and improves the electrical properties that lead to a reduced dark current and enhanced photovoltage in the stretchable photodiode. The work has demonstrated high fidelity measurements and longtime monitoring of heat rate variability and oxygen saturation, potentially enabling next-generation wearable photoplethysmography devices for point-of-care diagnosis of cardiovascular diseases in a more accessible and affordable way.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2021

In-situ proton radiation testing of 2.4 micron wavelength extended InGaAs photodiodes at dry ice and room temperatures

We have successfully tested 290 µm diameter, 2.4 micron wavelength, Extended InGaAs photodiodes coupled with single mode fiber using 50 MeV Protons at both dry ice temperature (-72 °C) and room temperature (20 °C). The devices were reverse biased at 100 mV during the radiation run and their leakage current was continuously monitored insitu during the exposure. These devices find multiple applications in space for spectroscopy & sensing, inter-satellite optical communication links, rapid Doppler shift LIDAR, as well as inter-planetary and Earth-to-Moon communication links. Several photodiodes were tested using 50 MeV Protons with an average flux level of 2.11 × 10 7 protons/cm 2 /s, for a total fluence of 1.0 × 10 11 protons/cm 2 and total dose of 20 krad (water). Pre- and post-radiation results were also measured for leakage current vs. voltage, responsivity (quantum efficiency), and bandwidth of the Extended InGaAs photodiodes. Finally, all devices were found to be fully functional at normal operating conditions and at both dry ice and room temperature.

2.4 micron wavelength↗

DOE OSTI2024

Fast photodiode arrays for high frequency fluctuation measurements of reconnecting flux ropes

An array of compact, high-bandwidth (>200 MHz) and low-cost optical photodiodes has been developed and implemented on the PHASe MApping (PHASMA) experiment. Using purpose-built electronics, an array of 16 photodetectors was constructed and used to monitor broadband (1–5 MHz) fluctuations in light intensity emitted by flux ropes undergoing electron-only magnetic reconnection. These measurements reveal a swath of oscillatory behavior, including wave propagation inward toward the diffusion region at approximately the local electron Alfvén speed. Custom 3D-printed collection optics and mounting hardware allow quick reconfiguration of the array for radial or axial measurements. The electronics design is flexible enough to be used with other current-sourcing transducers, such as avalanche photodiodes; silicon photomultipliers; and infrared, x-ray, and UV photodiodes. A noise-rejecting electrical layout allows for low-noise operation close to pulsed plasma discharges. A 16-channel, 64-pixel tomographic array was constructed and initial reconstructions are presented.

Instruments & Instrumentation↗

DOE OSTI2021

Skin-like low-noise elastomeric organic photodiodes

Stretchable optoelectronics made of elastomeric semiconductors could enable the integration of intelligent systems with soft materials, such as those of the biological world. Organic semiconductors and photodiodes have been engineered to be elastomeric; however, for photodetector applications, it remains a challenge to identify an elastomeric bulk heterojunction (e-BHJ) photoactive layer that combines a low Young’s modulus and a high strain at break that yields organic photodiodes with low electronic noise values and high photodetector performance. Here, a blend of an elastomer, a donor-like polymer, and an acceptor-like molecule yields a skin-like e-BHJ with a Young’s modulus of a few megapascals, comparable to values of human tissues, and a high strain at break of 189%. Elastomeric organic photodiodes based on e-BHJ photoactive layers maintain low electronic noise current values in the tens of femtoamperes range and noise equivalent power values in the tens of picowatts range under at least 60% strain.

42 ENGINEERING↗