Pixelated Silicon Photomultipler readout and organic scintillator detector assemblies.
Abstract not provided.
Sweany, Melinda↗
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Colloidal InAs Quantum Dot-Based Infrared Optoelectronics Enabled by Universal Dual-Ligand Passivation
Solution-processed low-bandgap semiconductors are crucial to next-generation infrared (IR) detection for various applications, such as autonomous driving, virtual reality, recognitions, and quantum communications. In particular, III–V group colloidal quantum dots (CQDs) are interesting as nontoxic bandgap-tunable materials and suitable for IR absorbers; however, the device performance is still lower than that of Pb-based devices. Herein, a universal surface-passivation method of InAs CQDs enabled by intermediate phase transfer (IPT), a preliminary process that exchanges native ligands with aromatic ligands on the CQD surface is presented. IPT yields highly stable CQD ink. In particular, desirable surface ligands with various reactivities can be obtained by dispersing them in green solvents. Furthermore, CQD near-infrared (NIR) photodetectors are demonstrated using solution processes. Careful surface ligand control via IPT is revealed that enables the modulation of surface-mediated photomultiplication, resulting in a notable gain control up to ≈10 with a fast rise/fall response time (≈12/36 ns). Considering the figure of merit (FOM), EQE versus response time (or –3 dB bandwidth), the optimal CQD photodiode yields one of the highest FOMs among all previously reported solution-processed nontoxic semiconductors comprising organics, perovskites, and CQDs in the NIR wavelength range.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
A discussion on various experimental methods of impact ionization coefficient measurement in GaN
Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
A 4 x 4 SiPM Sensor Array with Fast Preamplified Output Engineered for the PWO Detectors of the EIC EEEMCAL
The PbWO4 scintillation detectors for the Electron-Ion Collider Electron Endcap Electromagnetic Calorimeter (EEEMCAL) cannot use vacuum photomultipler tubes due to the high magnetic field environment. We are presenting a readout solution with a 4 x 4 SiPM array directly coupled to a preamplification and summing stage. A second amplification stage with variable gain and offset adjustments is also included in the compact electronics module. The integrated power supply feeds the signal processing chain and the adjustable bias control. The parameter settings are saved locally on a EEPROM and are adjustable via the integrated communication interface through USB or RS485. The design was optimized to maximize signal collection energy resolution, for fast timing and wide dynamic range while keeping a small footprint with low power consumption and heat dissipation. The output response is fast enough to meet the 100 ? 200 ns digitization gate requirements for the detector. The electronics assembly requires no active cooling and includes a temperature sensor and a gain compensation of thermal variations which are important features for stable operation in large scale detector structures. A detector prototype was constructed with 20 mm x 20 mm x 200 mm PWO crystals affixed with individual SiPM array readouts and arranged in a 3 x 3 array. This detector was tested at the Thomas Jefferson National Accelerator Facility with 5GeV positrons. We will present the results of these detector characterization measurements.
Philip, O.↗