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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

In-plane and through-plane dielectric properties of graphene oxide membrane: Effect of Al 3 + modification

A graphene oxide (GO) membrane can be used in structural dielectric capacitors and planar micro-supercapacitors as a dielectric separator material due to its excellent through-plane and in-plane dielectric properties. The ability to tailor the dielectric properties of the GO membrane is crucial for dielectric applications. We believe this to be the first demonstration describing how Al 3+ ions impact the dielectric properties of the GO membrane through cation to oxygenated functional groups interactions. In this work, the Al 3+ -modification to the GO membrane was realized through a facile pre-coordination method followed by layer-by-layer assembling. The influence of Al 3+ on the GO membranes’ through-plane and in-plane dielectric properties (dielectric constant and dielectric loss) was investigated in the frequency range from 0.01 Hz to 10 5 Hz. Plane-to-plane and edge-to-edge Al 3+ coordination with the functional group on the basal plane or edge of the GO sheets was proposed to understand the metal ion's impact on the dielectric properties. The results demonstrated that the Al 3+ modification was an effective strategy to tailoring the GO membranes’ dielectric properties in a low frequency regime and further suggested the possibility of designing dielectric GO membranes with controllable dielectric performance. At a low frequency range (0.01–1 Hz), the addition of Al 3+ increased the through-plane dielectric constant and decreased the in-plane dielectric constant. In terms of dielectric loss, unmodified GO membranes exhibited a higher in-plane dielectric loss than the through-plane dielectric loss. Al 3+ -modified GO membranes exhibited increased through-plane dielectric loss and decreased in-plane dielectric loss compared to the unmodified GO membranes.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Consequences of plane-strain and plane-stress assumptions in fully coupled chemo-mechanical Li-ion battery models

In Li-ion battery research, it is common to simulate chemo-mechanical phenomena in reduced dimensions (e.g., 2-D) as opposed to fully resolve these complex physics in 3-D. It is common to assume either (1) the out-of-plane strain is negligible (commonly referred to as plane-strain), or (2) the out-of-plane stress is negligible (commonly referred to as plane-stress). However, there is typically little consideration as to the quantitative consequences of these approximations. Furthermore, the influence of these out-of-plane assumptions can be compounded and convoluted when chemo-mechanics models implement so-called “fully coupled” formulations, where the local species concentrations influence the stress-state and the stress-state influences the local species fluxes. Here, the present manuscript explores the implications of using plane-stress and plane-strain assumptions in 2-D as compared to simulating a full 3-D electrode particle. This comparative study includes simulating both isotropic and anisotropic particle intercalation where the particles can be surrounded by either a liquid or solid electrolyte. Additionally, common Li-ion battery-model metrics such as the state-of-stress, intercalation fraction distribution, and specific capacity are compared, while also considering the effects of particle size and C-rate. As alternatives to the pure plane-strain and plane stress approximations, two modified plane-strain assumptions are found to better approximate the fully coupled chemo-mechanical 3-D behavior.

25 ENERGY STORAGE↗
DOE OSTI2021

Mocking the u-plane integral

Abstract The u -plane integral is the contribution of the Coulomb branch to correlation functions of $${\mathcal {N}}=2$$ N = 2 gauge theory on a compact four-manifold. We consider the u -plane integral for correlators of point and surface observables of topologically twisted theories with gauge group $$\mathrm{SU}(2)$$ SU ( 2 ) , for an arbitrary four-manifold with $$(b_1,b_2^+)=(0,1)$$ ( b 1 , b 2 + ) = ( 0 , 1 ) . The u -plane contribution equals the full correlator in the absence of Seiberg–Witten contributions at strong coupling, and coincides with the mathematically defined Donaldson invariants in such cases. We demonstrate that the u -plane correlators are efficiently determined using mock modular forms for point observables, and Appell–Lerch sums for surface observables. We use these results to discuss the asymptotic behavior of correlators as function of the number of observables. Our findings suggest that the vev of exponentiated point and surface observables is an entire function of the fugacities.

Mathematics↗
DOE OSTI2026

Effect of Specimen Thickness on Fracture Toughness and Plane Stress to Plane Strain Transition in Medium-Density Polyethylene

This study investigates the effect of specimen thickness on fracture toughness and the transition from plane stress to plane strain conditions in Medium-Density Polyethylene (MDPE) using Single Edge Notched Bend (SENB) specimens. Three thickness groups (7.5 mm, 9.0 mm, and 12.1 mm) were tested following ASTM D5045 protocol. Conditional stress intensity factors (KQ) increased from 2.2 MPavm to 2.8 MPavm with increasing thickness, demonstrating significant size dependency. Confocal microscopy revealed a 34% reduction in maximum crack tip opening displacement (CTOD) from 0.478 mm to 0.314 mm as thickness increased, with plastic zone lateral extent decreasing by 32%. This quantitative evidence validates Irwin's theoretical prediction of plastic zone size transition from plane stress r_y˜ (1/2p) (K_I/s_y )^2 to plane strain conditions r_y˜ (1/6p) (K_I/s_y )^2.Scanning electron microscopy confirmed progressive suppression of shear lips and evolution from ductile tearing with extensive polymer chain drawing in thin specimens to localized crazing in thick specimens. Despite all specimens satisfying the ASTM D5045 criterion (B = 2.5(KQ/s_y )^2 ) ,residual shear lips persisted even in the thickest specimens, demonstrating that nominal size requirements alone are insufficient for achieving complete plane strain conditions in highly ductile polymers. The findings emphasize the necessity of integrated analytical and morphological assessment for valid fracture toughness characterization, with critical implications for life assessment and integrity prediction in thick-section polymer components such as natural gas distribution pipelines.

Medium-Density Polyethylene↗
DOE OSTI2020

Necessary and sufficient conditions for resonant mixing of plane waves in elastic solids with quadratic nonlinearity

This paper studies the interactions of two plane waves in elastic solids with quadratic nonlinearity. In particular, the necessary and sufficient conditions for resonant mixing of two plane waves are derived. It is shown that the conventional resonance condition for resonant mixing of plane waves is only a necessary condition, not sufficient. Based on the newly derived necessary and sufficient conditions, resonant mixing of various types of plane waves are investigated and specific conditions for generating a resonant mixed wave are obtained for each case. These results are useful for developing nonlinear ultrasonic nondestructive evaluation techniques using the wave mixing method.

Gao, Xiang↗
DOE OSTI2020

In-plane uniaxial pressure-induced out-of-plane antiferromagnetic moment and critical fluctuations in BaFe 2 As 2

A small in-plane external uniaxial pressure has been widely used as an effective method to acquire single domain iron pnictide BaFe 2 As 2 , which exhibits twin-domains without uniaxial strain below the tetragonal-to-orthorhombic structural (nematic) transition temperature T s . Although it is generally assumed that such a pressure will not affect the intrinsic electronic/magnetic properties of the system, it is known to enhance the antiferromagnetic (AF) ordering temperature T N ( < T s ) and create in-plane resistivity anisotropy above T s . Here we use neutron polarization analysis to show that such a strain on BaFe 2 As 2 also induces a static or quasi-static out-of-plane ( c -axis) AF order and its associated critical spin fluctuations near T N / T s . Therefore, uniaxial pressure necessary to detwin single crystals of BaFe 2 As 2 actually rotates the easy axis of the collinear AF order near T N / T s , and such effects due to spin-orbit coupling must be taken into account to unveil the intrinsic electronic/magnetic properties of the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

How plane are plane shock waves in solids

The notion of plane shock waves is a macroscopic, very fruitful idealization of near discontinuous disturbance propagating at supersonic speed. Such a picture is comparable to the picture of shorelines seen from a very high altitude. When viewed at the grain scale where the structure of solids is inherently heterogeneous and stochastic, features of shock waves are non-laminar and field variables, such as particle velocity and pressure, fluctuate. This paper reviews select aspects of such fluctuating nonequilibrium features of plane shock waves in solids with focus on grain scale phenomena and raises the need for a paradigm change to achieve a deeper understanding of plane shock waves in solids.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

The stellar mass Fundamental Plane: the virial relation and a very thin plane for slow rotators

ABSTRACT Early-type galaxies – slow and fast rotating ellipticals (E-SRs and E-FRs) and S0s/lenticulars – define a Fundamental Plane (FP) in the space of half-light radius Re, enclosed surface brightness Ie, and velocity dispersion σe. Since Ie and σe are distance-independent measurements, the thickness of the FP is often expressed in terms of the accuracy with which Ie and σe can be used to estimate sizes Re. We show that: (1) The thickness of the FP depends strongly on morphology. If the sample only includes E-SRs, then the observed scatter in Re is $\sim 16{{\ \rm per\ cent}}$, of which only $\sim 9{{\ \rm per\ cent}}$ is intrinsic. Removing galaxies with M* < 1011 M⊙ further reduces the observed scatter to $\sim 13{{\ \rm per\ cent}}$ ($\sim 4{{\ \rm per\ cent}}$ intrinsic). The observed scatter increases to $\sim 25{{\ \rm per\ cent}}$ usually quoted in the literature if E-FRs and S0s are added. If the FP is defined using the eigenvectors of the covariance matrix of the observables, then the E-SRs again define an exceptionally thin FP, with intrinsic scatter of only 5 per cent orthogonal to the plane. (2) The structure within the FP is most easily understood as arising from the fact that Ie and σe are nearly independent, whereas the Re−Ie and Re−σe correlations are nearly equal and opposite. (3) If the coefficients of the FP differ from those associated with the virial theorem the plane is said to be ‘tilted’. If we multiply Ie by the global stellar mass-to-light ratio M*/L and we account for non-homology across the population by using Sérsic photometry, then the resulting stellar mass FP is less tilted. Accounting self-consistently for M*/L gradients will change the tilt. The tilt we currently see suggests that the efficiency of turning baryons into stars increases and/or the dark matter fraction decreases as stellar surface brightness increases.

Bernardi, M.↗
DOE OSTI2020

Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c -Plane and m -Plane (In, Ga) N Quantum Wells

The diffusion coefficient of holes can provide knowledge about carrier localization in (In, Ga)N, where the carrier dynamics are altered by randomly fluctuating potential landscape. In group-III nitrides, the diffusivity of holes is difficult to measure by electrical methods but it can be studied using optical techniques. Here, we investigate the dependence of the hole diffusion coefficient on direction and carrier density in c-plane and m-plane (In, Ga)N structures by employing the light-induced transient-grating technique. We show that the hole diffusion coefficient is anisotropic in the m-plane structure, where it is several times larger along the a crystallographic direction than along the c direction. Such anisotropy is observed within the broad range of carrier densities from 10 18 to 10 20 cm –3 . The diffusivity changes nonmonotonously with increasing photoexcitation, this dependence being different in thick and thin layers. We argue that an unexpectedly high diffusion coefficient at low carrier densities in thick quantum wells can be a signature of efficient hole transport via percolative paths occurring due to compositional disorder. In turn, a decrease of diffusivity with the excitation can reflect the effect of Coulomb blockade of these paths. Lastly, we demonstrate that disorder impacts carrier diffusivity even at carrier densities above 10 19 cm –3 , where the overflow of localized states must be included to explain the observed increase of the diffusion coefficient with the carrier density.

36 MATERIALS SCIENCE↗
DOE OSTI2022

In-plane and out-of-plane optical response of the nodal-line semimetals ZrGeS and ZrGeSe

Polarization-dependent reflectivity measurements were carried out over a broad frequency range on single-crystalline ZrGeSe and ZrGeS compounds, which are closely related to the prototype nodal-line semimetal ZrSiS. These measurements revealed the strongly anisotropic character of both ZrGeSe and ZrGeS, with a reduced plasma frequency for the out-of-plane direction E∥c as compared with the in-plane direction E ∥ ab. For E ∥ ab, the optical conductivity spectrum consists of two Drude terms followed by a shoulder or plateaulike behavior and a distinct U shape at higher energies, while for E ∥ c, one Drude term is followed by a peaklike behavior, and the U shape of the profile is less developed. Under external pressure, two prominent excitations appear in the out-of-plane optical conductivity spectrum of ZrGeSe, whose frequency position and oscillator strength show a weak anomaly at ~3 GPa. Overall, the pressure-induced changes in the profile of the E∥c conductivity spectrum are much enhanced >~3 GPa. We compare our results to those recently reported for ZrSiS in a quantitative manner.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Flow-plane decorrelations in heavy-ion collisions with multiple-plane cumulants

The azimuthal correlations between local flow planes at different (pseudo)rapidities (η) may reveal important details of the initial nuclear matter density distributions in heavy-ion collisions. Extensive experimental measurements of a factorization ratio (r 2 ) and its derivative (F 2 ) have shown evidence of the longitudinal flow-plane decorrelation. However, nonflow effects also affect this observable and prevent a quantitative understanding of the phenomenon. In this paper, to distinguish decorrelation and nonflow effects, we propose a new cumulant observable, T 2 , which largely suppresses nonflow. Here, the technique sensitivity to different initial-state scenarios and nonflow effects are tested with a simple Monte Carlo model, and in the end, the method is applied to events simulated by a multiphase transport model (AMPT) for Au+Au collisions at $\sqrt{s_{NN}}$ = 200 GeV. We also emphasize that a distinct decorrelation signal requires not only the right sign of an observable but also its proper dependence on the η window of the reference flow plane to be consistent with the pertinent decorrelation picture.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

An adaptive moments-based interface reconstruction using intersection of the cell with one half-plane, two half-planes and a circle

We present a new adaptive moment-of-fluid (A-MOF) interface reconstruction method. It uses the zeroth, first, and second moments of the fragment of material inside a cell of the mesh to construct a shape that approximates the respective material fragment. The new method requires information about the material moments only for the cell under consideration. The adaptive method chooses between shapes obtained by the intersection of the cell with one half-plane, two half-planes, or a circle. The A-MOF method allows to exactly reproduce several convex shapes: corners, filaments, and their concave cell-complements; as well as pieces of the circles and its cell-compliments. Interface reconstruction is formulated as a local (for each cell), non-linear, equality constrained optimization problem, which does not require additional communication and allows for an efficient parallel implementation. In conclusion, we present an extensive set of test problems, both for interface reconstruction on a single cell, and for reconstruction of a variety of shapes on the entire mesh.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Grain Boundary Plane Measurement Using Transmission Electron Microscopy Automated Crystallographic Orientation Mapping for Atom Probe Tomography Specimens

Abstract Grain boundaries are critical in determining the properties of materials, including mechanical stability, conductivity, and corrosion resistance. The specific properties of materials depend not only on the misorientation of the crystals, the three most commonly characterized parameters, but also on the angle of the grain boundary plane between the two crystals, the final two parameters in the five-parameter macroscopic description of the grain boundary. The method presented here allows for the direct measurement of all five parameters of the grain boundary in a transmission electron microscopy specimen of various morphologies. This is especially applicable to atom probe specimens, where only a single-tilt axis is generally available, allowing the crystallographic description to be matched to the detailed chemical data available in the atom probe tomography. This method provides a platform for efficient grain boundary analysis in unique samples, saving operator time and allowing for ease of acquisition and interpretation in comparison with traditional electron diffraction methods.

Materials Science↗
DOE OSTI2019

In-plane hexagonal antiferromagnet in the Cu-Mn-As system Cu 0.82 Mn 1.18 As

We report the single-crystal growth and characterization of a hexagonal phase Cu 0.82 Mn 1.18 As, in the Cu-Mn-As system. This compound contains the same square-pyramidal MnAs 5 units as the tetragonal and orthorhombic polymorphs of CuMnAs. Calorimetry, magnetometry, and neutron diffraction measurements reveal antiferromagnetic ordering at 270 K. The magnetic structure consists of a triangular arrangement of spins in the ab plane. Hexagonal Cu 0.82 Mn 1.18 As shows resistivity that varies only weakly from 5 to 300 K, and is many times higher than tetragonal CuMnAs, indicative of a strongly scattering metal. First-principles calculations confirm the metallic band structure with a small density of states at the Fermi energy. The neutron-refined magnetic ground state is close to the computationally determined minimum energy configuration. This compound should serve as a clear control when disentangling the effects of current-driven Néel switching of metallic antiferromagnets since it exhibits in-plane spins but the magnetic ordering does not break degeneracy along the a and b directions, unlike tetragonal CuMnAs.

36 MATERIALS SCIENCE↗