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At least 19 records

Strain-free polished channel-cut crystal monochromators: a new approach and results

The use of channel-cut crystal monochromators has been traditionally limited to applications that can tolerate the rough surface quality from wet etching without polishing. We have previously presented and discussed the motivation for producing channel cut crystals with strain-free polished surfaces [1]. Afterwards, we have undertaken an effort to design and implement an automated machine for polishing channel-cut crystals. The initial effort led to inefficient results. Since then, we conceptualized, designed, and implemented a new version of the channel-cut polishing machine, now called C-CHiRP (Channel-Cut High Resolution Polisher), also known as CCPM V2.0. The new machine design no longer utilizes Figure-8 motion that mimics manual polishing. Instead, the polishing is achieved by a combination of rotary and linear functions of two coordinated motion systems. Here we present the new design of C-CHiRP, its capabilities and features. Multiple channel-cut crystals polished using the C-CHiRP have been deployed into several beamlines at the Advanced Photon Source (APS). We present the measurements of surface finish, flatness, as well as topography results obtained at 1-BM of APS, as compared with results typically achieved when polishing flat-surface monochromator crystals using conventional polishing processes. Limitations of the current machine design, capabilities and considerations for strain-free polishing of highly complex crystals are also discussed, together with an outlook for future developments and improvements.

Kasman, Elina↗

Graphene oxide coated side polished surface plasmon resonance optical fibre sensor with varying polishing losses

Four batches of side-polished SMF optical fibres with different polishing losses, − 0.5 dBm, − 5 dBm, − 10 dBm and − 15 dBm were coated with a graphene oxide layer of ~ 0.5 μm via drop casting. TE polarized light was propagated through the light during experiments and four different transformer oils with different water contents were dropped onto the sensor. The drop in the power of transmitted light was recorded. The responses of the sensors showed good linearity for all, but the least polished fibre showed the weakest response in terms of power drop towards change in concentration. The − 5 dBm fibre showed the best response per unit concentration change. Additional tests showed the increased response for a GO coated side polished sensor compared to an uncoated side polished sensor. Simulation using COMSOL was performed to show the effects on the electric field of a sensor with and without GO coating. Another set of simulations were performed to show the effects of reducing cladding thickness on the coupling of the electric field. Simulations show that the optimal cladding thickness is not the most polished fibre, coinciding with our results that − 15 dBm loss fibre did not show the most response per unit change in the analyte.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Design Considerations of Polishing Lap for Computer-Controlled Cylindrical Polishing Process

The future X-ray observatory missions, such as International X-ray Observatory, require grazing incidence replicated optics of extremely large collecting area (3 m2) in combination with angular resolution of less than 5 arcsec half-power diameter. The resolution of a mirror shell depends ultimately on the quality of the cylindrical mandrels from which they are being replicated. Mid-spatial-frequency axial figure error is a dominant contributor in the error budget of the mandrel. This paper presents our efforts to develop a deterministic cylindrical polishing process in order to keep the mid-spatial-frequency axial figure errors to a minimum. Simulation studies have been performed to optimize the operational parameters as well as the polishing lap configuration. Furthermore, depending upon the surface error profile, a model for localized polishing based on dwell time approach is developed. Using the inputs from the mathematical model, a mandrel, having conical approximated Wolter-1 geometry, has been polished on a newly developed computer-controlled cylindrical polishing machine. We report our first experimental results and discuss plans for further improvements in the polishing process.

Khan, Gufran S.↗

Design Considerations of Polishing Lap for Computer-Controlled Cylindrical Polishing Process

This paper establishes a relationship between the polishing process parameters and the generation of mid spatial-frequency error. The consideration of the polishing lap design to optimize the process in order to keep residual errors to a minimum and optimization of the process (speeds, stroke, etc.) and to keep the residual mid spatial-frequency error to a minimum, is also presented.

Khan, Gufran S.↗

Laser-induced damage characteristics of fused silica surfaces polished to different depths using fluid jet polishing

Deterministic finishing methods of optical components for high-peak-power laser applications that can meet the requirements for high laser damage resistance are not sufficiently developed to meet all needs. This is especially the case for ultraviolet (UV) laser applications. Fused silica is the material of choice for optics operating at UV wavelengths owing to its intrinsically large bandgap, high transparency, and excellent uniformity. Here we report on the laser damage behavior of fused silica surfaces finished by fluid jet polishing (FJP) as a function of removal depth. Fused silica test substrates were processed by FJP to depths ranging from 0.7 μm to 18 μm. Laser damage testing was conducted on these surfaces at 351 nm and 1-ns pulse lengths for both, 1-on-1 and R-on-1 testing protocols. The results for 1-on-1 testing showed no degradation in the laser-induced damage threshold (LIDT) of the substrates. Instead, a gradual improvement starting at a depth of 2.1 μm was observed and continued to the 18-μm surface. At 18-μm of removal, the LIDT was 16% higher than a surface that was not finished by FJP. For R-on-1 testing, all surfaces treated by FJP demonstrated an improvement in laser damage resistance. At depths greater than 5 μm, the improvements were significantly more pronounced and a 30% increase in the LIDT was realized.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Chemistry and Formation of the Beilby Layer During Polishing of Fused Silica Glass

The chemical characteristics and the proposed formation mechanisms of the modified surface layer (called the Beilby layer) on polished fused silica glasses are described. Fused silica glass samples were polished using different slurries, polyurethane pads, and at different rotation rates. The concentration profiles of several key contaminants, such as Ce, K, and H, were measured in the near surface layer of the polished samples using Secondary Ion Mass Spectroscopy (SIMS). The penetration of K, originating from KOH used for pH control during polishing, decreased with increase in polishing material removal rate. In contrast, penetration of the Ce and H increased with increase in polishing removal rate. In addition, Ce penetration was largely independent of the other polishing parameters (e.g., particle size distribution and the properties of the polishing pad). The resulting K concentration depth profiles are described using a two-step diffusion process: (1) steady-state moving boundary diffusion (due to material removal during polishing) followed by (2) simple diffusion during ambient postpolishing storage. Using known alkali metal diffusion coefficients in fused silica glass, this diffusion model predicts concentration profiles that are consistent with the measured data at various polishing material removal rates. On the other hand, the observed Ce profiles are inconsistent with diffusion based transport. Rather we propose that Ce penetration is governed by the ratio of Ce–O–Si and Si–O–Si hydrolysis rates; where this ratio increases with interface temperature (which increases with polishing material removal rate) resulting in greater Ce penetration into the Beilby layer. Calculated Ce surface concentrations using this mechanism are in good agreement to the observed change in measured Ce surface concentrations with polishing material removal rate. In conclusion, these new insights into the chemistry of the Beilby layer, combined together with details of the single particle removal function during polishing, are used to develop a more detailed and quantitative picture of the polishing process and the formation of the Beilby layer.

36 MATERIALS SCIENCE↗

Effect of the Binder during Ultra-Precision Polishing of Tungsten Carbide Using a Semirigid Bonnet Tool

Tungsten carbide (WC) has the characteristics of high hardness, high strength, corrosion resistance, wear resistance and excellent fracture toughness. Accordingly, it has been commonly used as the material for cutting tools and molds in glass-forming techniques. To obtain ultra-smooth surfaces, fine polishing of WC is indispensable. However, the efficiency of WC polishing is low using the existing polishing methods, and the mechanism behind the polishing process requires further investigation. Specifically, the effect of the binder in WC polishing is not clear since there are different kinds of WC with various weight percentages of the binder. In this paper, we present the findings of a study on the polishing performance of two kinds of WC material, with and without the binder, using a semi-rigid (SR) bonnet polishing tool. A series of experiments were performed on a 6-DOF robotic polishing instrument to investigate the material-removal characteristics, surface integrity and sub-surface damage after polishing. The results demonstrate that the SR bonnet polishing tool successfully reduced the surface roughness of WC with and without the binder to the nanometric level, though the lowest surface roughness was obtained on binder-less WC. No obvious sub-surface damage was observed under SEM inspection, while the processing efficiency was greatly improved owing to the high material removal rate of the tool. Based on our analysis of key polishing parameters and corresponding surface integrities, the effect of the binder on the polishing performance is explained, which offers excellent guidance for WC polishing.

ultra-precision machining↗

Computer-Controlled Cylindrical Polishing Process for Development of Grazing Incidence Optics for Hard X-Ray Region

The presentation includes grazing incidence X-ray optics, motivation and challenges, mid spatial frequency generation in cylindrical polishing, design considerations for polishing lap, simulation studies and experimental results, future scope, and summary. Topics include current status of replication optics technology, cylindrical polishing process using large size polishing lap, non-conformance of polishin lap to the optics, development of software and polishing machine, deterministic prediction of polishing, polishing experiment under optimum conditions, and polishing experiment based on known error profile. Future plans include determination of non-uniformity in the polishing lap compliance, development of a polishing sequence based on a known error profile of the specimen, software for generating a mandrel polishing sequence, design an development of a flexible polishing lap, and computer controlled localized polishing process.

Khan, Gufran Sayeed↗

Review on robot-assisted polishing: Status and future trends

Nowadays, precision components have been extensively used in various industries such as biomedicine, photonics, and optics. To achieve nanometric surface roughness, high-precision polishing is mandatory. Compared with the conventional polishing techniques, the robot-assisted polishing has the advantages of flexible working ranges and low cost. Therefore, it has been more widely deployed in demanding polishing tasks. However, few review articles were found on this topic to provide a general progress on the development of the robot-assisted polishing technology. Here in this paper reviews the recent advancement of the robot-assisted polishing. Firstly, the integration of robots with various polishing techniques is overviewed, followed by the introduction of the research status of constant force control in robot-assisted polishing. Then, the errors in typical robot-assisted polishing systems are analyzed, together with the corresponding compensation methods. At last, the future trends in the development of robot-assisted polishing are discussed. This review is intended as a roadmap for researchers or engineers who are interested in robot-assisted polishing or machining.

36 MATERIALS SCIENCE↗

Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers after mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d 5/2 O 2 and 76.7% for Te 3d 3/2 O 2 ) compared with the HBr-based solution (27.6% for Te 3d 5/2 O 2 and 35.8% for Te 3d 3/2 O 2 ). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better performance of 7.15% full-width at half-maximum (FWHM) compared with 7.59% FWHM for the HBr-based solution, the latter showed a smaller variation in performance of 0.39% FWHM over 7 days compared with 0.69% for the BME-based solution.

36 MATERIALS SCIENCE↗

Computer-Controlled Cylindrical Polishing Process for Large X-Ray Mirror Mandrels

We are developing high-energy grazing incidence shell optics for hard-x-ray telescopes. The resolution of a mirror shells depends on the quality of cylindrical mandrel from which they are being replicated. Mid-spatial-frequency axial figure error is a dominant contributor in the error budget of the mandrel. This paper presents our efforts to develop a deterministic cylindrical polishing process in order to keep the mid-spatial-frequency axial figure errors to a minimum. Simulation software is developed to model the residual surface figure errors of a mandrel due to the polishing process parameters and the tools used, as well as to compute the optical performance of the optics. The study carried out using the developed software was focused on establishing a relationship between the polishing process parameters and the mid-spatial-frequency error generation. The process parameters modeled are the speeds of the lap and the mandrel, the tool s influence function, the contour path (dwell) of the tools, their shape and the distribution of the tools on the polishing lap. Using the inputs from the mathematical model, a mandrel having conical approximated Wolter-1 geometry, has been polished on a newly developed computer-controlled cylindrical polishing machine. The preliminary results of a series of polishing experiments demonstrate a qualitative agreement with the developed model. We report our first experimental results and discuss plans for further improvements in the polishing process. The ability to simulate the polishing process is critical to optimize the polishing process, improve the mandrel quality and significantly reduce the cost of mandrel production

Khan, Gufran S.↗

Influence of partial charge on the material removal rate during chemical polishing

A partial charge-based chemical polishing model has been developed, which can serve as metric for describing the relative polishing material removal rate for different combinations of slurries and workpieces. A series of controlled polishing experiments utilizing a variety of colloidal polishing slurries (SiO 2 , CeO 2 , ZrO 2 , MgO, Sb 2 O 5 ) and optical materials [single crystals of Al 2 O 3 (sapphire), SiC, Y 3 Al 5 O 12 (YAG), CaF 2 , and LiB 3 O 5 (LBO); a SiO 2 -Al 2 O 3 -P 2 O 5 -Li 2 O glass ceramic (Zerodur); and glasses of SiO 2 :TiO 2 (ULE), SiO 2 (fused silica), and P 2 O 5 -Al 2 O 3 -K 2 O-BaO (Phosphate)] was performed and its material removal rate was measured. As previously proposed by Cook (J Non-Cryst Solids. 1990;120:152), for many polishing systems, the removal rate is governed by a series of chemical reactions which include the formation of a surface hydroxide, followed by condensation of that hydroxyl moiety with the polishing particle, and a subsequent hydrolysis reaction. The rate of condensation can often be the rate limiting step, thus it can determine the polishing material removal rate. By largely keeping the numerous other factors that influence material removal rate fixed (such as due to particle size distributions, interface interactions, pad topography, kinematics, and applied pressure), the material removal rate is shown to scale exponentially with the partial charge difference (δ wp-s ) between the workpiece and polishing slurry particle for many of the slurry-workpiece combinations indicating that condensation rate is the rate limiting step. The partial charge (δ) describes the equilibrium distribution of electron density between chemically bonded atoms and is related to the electronegativity of the atoms chemically bonded to one another. This partial charge model also explains the age-old experimental finding of why cerium oxide is the most effective polishing slurry for chemical removal of many workpieces. Finally, some of the slurry-workpiece combinations that did not follow the partial charge dependence offer insight to other removal mechanisms or rate limiting reaction pathways.

36 MATERIALS SCIENCE↗

Material Removal and Surface Integrity Analysis of Ti6Al4V Alloy after Polishing by Flexible Tools with Different Rigidity

Ti6Al4V alloy has been widely used in many fields, such as aerospace and medicine, due to its excellent biocompatibility and mechanical properties. Most high-performance components made of Ti6Al4V alloy usually need to be polished to produce their specific functional requirements. However, due to the material properties of Ti6Al4V, its polishing process still requires significant development. Therefore, this study aimed to investigate the performance of polishing Ti6Al4V by using tools with different rigidities. Two kinds of bonnet tool were used, namely a pure rubber (PR) bonnet and a semirigid (SR) bonnet. The characterization of material removal and surface integrity after polishing was conducted through a series of experiments on a 6-DOF robotic polishing device. The results demonstrate that both bonnet tools successfully produce nanometric level surface roughness. Moreover, the material removal rate of the SR bonnet tool is significantly higher than that of the PR bonnet, which is consistent with the material removal characteristics of glass polishing in previous research. In addition, the presented analysis on key polishing parameters and surface integrity lays the theoretical foundation for the polishing process of titanium alloy in different application fields.

36 MATERIALS SCIENCE↗