Finite Element Simulation of Potential-Induced Degradation Kinetics in p-Type Silicon Solar Modules
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Review of Potential–Induced Degradation in Bifacial Photovoltaic Modules
Bifacial modules are increasingly deployed in the field and are expected to represent half of the market share within 10 years. Their rear structure differs from monofacial modules to allow additional light absorption. However, it brings new reliability challenges to address. In particular, the risk of potential-induced degradation (PID) is increased as both module sides are impacted. Different PID processes have been identified in the literature: shunting type (PID-s), polarization type (PID-p), Na penetration type, and corrosion type (PID-c). Their occurrence depends on the photovoltaic system configuration as well as the module's materials. Apart from PID-s, PID processes are not well understood and extensive research is needed to elucidate the PID scenario and underlying mechanisms. Herein, current knowledge about PID processes and their impact on the main bifacial modules in the market are gathered with the aim to guide future research. Bifacial module technologies and leakage current paths leading to PID are described. Indoor and outdoor PID testing methods are detailed. For each bifacial module technology, the PID processes are investigated with their indicators, mechanism and recovery process. Furthermore, PID-impacting factors and limitation solutions are finally reported and a state of the art on PID modeling is presented.
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Impact of illumination and encapsulant resistivity on polarization-type potential-induced degradation on n-PERT cells
Power loss caused by polarization-type potential-induced degradation (PID-p) in a variety of high-performance photovoltaic cell types has been observed to be recoverable via subsequent illumination and in some cases preventable via simultaneous illumination. In this report, we describe the results of a study in which the front faces of n-PERT cells encapsulated in polymers with a broad range of electrical resistivity were exposed to varying and controlled irradiance during PID testing. For a low resistivity ethylene-vinyl acetate copolymer encapsulant, no reduction in the rate or extent of power loss was observed for irradiance as high as 1,000 W/m 2 , whereas for high and intermediate resistivity polyolefin encapsulants, 100 and 300 W/m 2 , respectively, prevented power loss. We introduce a simple model based on charge accumulation that facilitates interpretation of these results whereby degradation via charge accumulation under voltage stress and recovery due to light exposure are opposing and interdependent phenomena that describe the susceptibility of a module to power loss.
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Comparing Outdoor to Indoor Performance for Bifacial Modules Affected by Polarization-Type Potential-Induced Degradation
Bifacial photovoltaic (PV) modules have the advantage of using light reflected off of the ground to contribute to power production. Predicting the energy gain is challenging and requires complex models to do so accurately. Often, module degradation over time is neglected in models for the sake of simplicity or is underestimated. Comparing outdoor and indoor current–voltage (I–V) performance for bifacial modules is more challenging than for monofacial modules, as there are additional variables to consider such as rear albedo non-uniformity, cell mismatch, and their effects on temperature. This challenge is compounded when heterogeneous degradation modes occur, such as polarization-type potential-induced degradation (PID-p). To examine the effects of PID-p on I–V predictions using an empirical data-driven approach, 16 bifacial PERC modules are installed outdoors on racks with different albedo conditions. A subset is exposed to high-voltage biases of −1500 V or +1500 V. Outdoor data are traced at irradiance ranges of 150–250 W/m 2 , 500–600 W/m 2 , and 900–1000 W/m 2 . These curves are corrected using control module temperature, wire resistivity, and module resistance measured indoors. We examine several methods to transform indoor I–V curves to accurately, and more simply than existing methods, approximate outdoor performance for bifacial modules without and with varying levels of PID-p degradation. This way, bifacial performance modeling can be more accessible and informed by fielded, degraded modules. Distributions of percent errors between indoor and outdoor performance parameters and Mean Absolute Percent Errors (MAPEs) are used to assess method quality. Results including low-irradiance data (150–250 W/m 2 ) are discussed but are filtered for quantifying method quality as these data introduce substantial errors. The method with the most optimal tradeoff between low MAPE and analysis simplicity involves measuring the front side of a module indoors at an irradiance equal to plane-of-array irradiance plus the product of module bifaciality and albedo irradiance. This method gives MAPE values of 1–6.5% for non-degraded and 1.6–5.9% for PID-p degraded module performance.
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Potential-induced degradation of Cu(In,Ga)Se 2 can occur by shunting the front i-ZnO and by damaging the p-n junction
In this work we test field-relevant potential-induced degradation (PID) behavior by encapsulating laboratory Cu(In,Ga)Se 2 (CIGS) solar cells and applying +1000 V uniformly on the face of the front glass. In this configuration, we find that K-rich borosilicate glass reduces the extent of PID relative to Na-rich soda-lime glass. We also find that the standard testing protocol of stressing cells at short-circuit leads to faster PID than stressing cells at open-circuit. We characterize two types of CIGS PID: The first, front shunting PID, is driven by front-glass stress and occurs when alkali metal cations accumulate in the i-ZnO buffer, where they increase shunt conductance to reduce fill factor. The second, p-n junction PID, results from back-glass stress as alkali metal cations pile up near the CIGS surface/CdS buffer, where they reduce charge carrier concentration, open-circuit voltage, and fill factor to degrade efficiency ~160 times faster than front shunting PID.
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Polarization-type potential-induced degradation in bifacial PERC modules in the field
This study examines the susceptibility of bifacial glass/glass passivated emitter and rear cell (PERC) modules to potential-induced degradation-polarization (PID-p) in the field. While there are several studies showing PID-p occurring on both front and back faces of bifacial PERC in accelerated tests, we address the yet unclarified behavior in fielded modules. We examine the effects of mounting configuration; specifically, comparing modules mounted near ground and in elevated ground rack configurations. Modules with the cell circuit in -1500 V system voltage configuration, whether mounted on racks about 30 cm above the ground or elevated 2 m high showed mean degradation of 4.5% to 6% in power under standard test conditions over about 2.5 weeks as measured from the front side of the module. This extent of degradation remained sustained for a duration of about 6 months analyzed. Average daytime temperatures of modules in the various mounting configurations were similar and therefore judged to be insufficient to be a primary influence for the modest PID-p rate differences that we observed among mounting configurations. Increased leakage current in the morning suggests morning dew was sustained longer on modules near the ground measured over six months which would be expected to increase the PID-p rate over the long term. However, the main difference seen between the modules on the various mountings during the initial period with up to 6% mean degradation by PID-p was the approximately two times the irradiance from albedo on the rear of modules mounted in elevated ground rack compared to those on the near ground rack. This difference in incident albedo led to a modestly reduced rate of the development of PID-p of the modules on the elevated ground rack. The difference is attributed to the dissipation of PID-p-causing electrical charge by the albedo incident on the module rear. The behavior could be modeled by a sigmoidal equation with consideration of the differences in the insolation on the module rear.
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Evaluation of bifacial module technologies with combined–accelerated stress testing
In view of the increasing interest and market share of bifacial cells and modules, suitable substrates such as glass and transparent backsheets along with ethylene vinyl acetate (EVA) and polyolefin elastomer (POE) encapsulants were examined in combined-accelerated stress testing (C-AST) to evaluate and compare degradation modes. Testing with both monofacial and bifacial cells, we found glass-glass modules with monofacial cells led to greater grid finger breakage than those with polymeric backsheets. Furthermore, this is attributed to previous X-ray topography and modeling work showing higher stress in cells and interconnections in glass-glass modules than glass-backsheet modules. Consistent with the objectives of C-AST, which stresses modules at levels corresponding to the limits seen in the natural environment, we observed the UV-fluorescence signatures of modules tested in C-AST (considering the degradation associated with developing chromophores, moisture penetration and photobleaching effects) to be like those in fielded modules, more so than other chamber stress testing implemented for comparison. We found light-induced degradation (LID) in module types with regenerated (inactive) cells with C-AST, suggesting the possibility of LID destabilization in some field conditions. We could also distinguish potential-induced degradation (PID) on the back of the bifacial passivated emitter and rear cells (PERC) in C-AST. Confirming with ex-situ tests, we found polarization-type PID most prevalent in glass-glass modules with EVA as would be anticipated considering the greater leakage current through such module encapsulation. Unlike PID tests performed in the dark, which can lead to false positive PID test results, field-representative illumination is experienced by the modules on the front and back side while –1200 V system voltage is applied in C-AST, supporting the conclusion that this module type with glass-glass construction would be susceptible to PID in the field.
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Evidence of Polarization‐Type Potential‐Induced Degradation (PID‐p) in the Field and Investigation of the Recovery Mechanism on Bifacial p ‐PERC Modules
This study investigates the polarization-type potential-induced degradation (PID-p) of bifacial glass/glass p-type passivated emitter rear contact (p-PERC) modules in the field and their recovery behavior. Modules were installed with three mounting configurations providing different albedo conditions. System voltage (–600, –1500, and +1500 V) was applied to the cell circuits, with respect to the grounded module frames. No degradation was observed for positively biased modules, but PID-p was identified on the rear side when cells are negatively biased, with maximum power dropping during the first days and stabilizing at values up to 8% loss. Electroluminescence images revealed a variation of the cells' PID-p susceptibility within a module. Three parameters were shown to impact the degradation rate: rear albedo light, voltage, and wetness conditions. Degraded modules were recovered either by (1) a positive bias (+1500 V), (2) outdoor illumination with the front side facing sun, (3) outdoor illumination with the rear side facing sun, or (4) dark storage. A recovery pattern was identified with I–V parameters decreasing to a local minimum before increasing to full recovery. The proposed mechanism is based on the band bending at the rear p-type Si/AlO x/SiN x interface, going from inversion to depletion and accumulation states. Full recovery was achieved in 2–7 h for the modules recovered with the rear side facing sun, four to eight nights for the modules positively biased at night, and 10–20 days for the modules with the front side facing sun. Dark storage showed slower recovery rates as I–V parameters were not improving even after 1 month. Here, the recovery rates were correlated with the net Coulombs transferred during the preceding PID stress: When more Coulombs are transferred during the degradation, the extent of degradation is greater, leading to slower recovery rates.
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Worldwide Physics-Based Lifetime Prediction of c-Si Modules Due to Solder-Bond Failure
Lifetime prediction of the fielded c-Si solar modules due to location-specific weather conditions has been an important topic of photovoltaic research and the economic viability of solar energy. Data analytic techniques such as the performance ratio method, Statistical clear sky model, and Suns-Vmp methods quantify the degradation from measured data of a solar farm, however, the nonlinear time-dependence and correlated degradations make it difficult to use the empirical degradation rates for ultimate lifetime projection. In this article, we propose a complementary physics-based model to predict the solder bond failure caused by mechanical stress associated with the variations of the temperature. Integrating the worldwide weather information from NASA/NSRDB databases, the model predicts the location-specific output-power degradation and the lifetime of a module due to solder bond failure. The model parameters are calibrated against qualification tests involving thermal cycling of specific batches of modules from a specific technology/manufacturer. The results may be summarized as: 1) Modules installed at higher latitudes show a longer lifetime due to reduced damage accumulation. 2) The reduction of temperature fluctuation close to large bodies of water, such as seashores, increases solder bond lifetime significantly. 3) Relatively speaking, modules installed close to the Tropic of Cancer/Capricorn (23.5 degrees North/South) suffer from a higher solder bond damage and have a shorter lifetime, suggesting a conservative design. This model should serve as a building block of a comprehensive reliability framework that can predict the lifetime of a module that experiences simultaneous and correlated degradation mechanisms involving yellowing, corrosion, and potential-induced degradation.
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Evaluation of Bifacial Modules and PV Technologies with Combined-Accelerated Stress Testing
In view of the increasing interest and market share of bifacial cells and modules, suitable substrates such as glass and transparent backsheets along with ethylene vinyl acetate (EVA) and polyolefin elastomer (POE) encapsulants were examined in combined-accelerated stress testing (C-AST) to evaluate and compare degradation modes. Testing with both monofacial and bifacial cells, we found glass-glass modules with monofacial cells led to greater grid finger breakage than those with polymeric backsheets. This is attributed to previous x-ray topography work showing higher stress in cells in glass-glass modules than glass backsheet modules. Consistent with the objectives of C-AST, which stresses modules at levels corresponding to the limits seen in the natural environment, we observed the UV-fluorescence signatures of modules tested in C-AST (considering the degradation associated with developing chromophores, moisture penetration and photobleaching effects) to be like those in fielded modules, more so than other chamber stress testing implemented for comparison. Finally, among multiple cell degradation modes that we observed such as light-induced degradation (LID), we differentiated susceptibility to potential-induced degradation (PID) on the back of the bifacial Passivated Emitter Back Cells (PERC) in C-AST. Confirming with ex-situ tests, we found polarization-type PID most prevalent in glass/glass modules with EVA as would be anticipated considering the greater leakage current through such module encapsulation. Unlike PID tests performed in the dark, which can lead to false positive PID test results, field-representative illumination is experienced by the modules on the front and back side while -1200 V system voltage is applied in C-AST, supporting the conclusion that this module type would be susceptible to PID in the field.
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Electrochemical Modeling of PID Leakage Current of PV Modules: Steady-State Current, Transient Current, and RC-Equivalent Circuit
Potential-induced degradation (PID) remains a significant reliability concern for photovoltaic (PV) modules, arising when a voltage difference between the module frame and the solar cells drives unintended leakage current through the glass-encapsulant stack. Although PID ultimately manifests as PID-s, PID-p, or PID-c, the underlying behavior of the leakage current-its magnitude and time dependence-requires clearer electrochemical interpretation. Traditional explanations attribute the initial transient current to bulk capacitive elements of the glass, encapsulant, and antireflection coatings, and the steady-state current according to their effective ohmic resistance. More recent studies, however, indicate that electrochemical charge-transfer processes at the encapsulant-metallization interface can play a dominant role in defining the leakage-current path. This paper develops a unified electrochemical framework for modeling PID leakage current. First, an RC-equivalent circuit is formulated by combining conventional RC elements with a Randles-type interface to capture transient leakage current through double-layer capacitance and faradaic processes at ionic-electronic boundaries. Second, the steady-state current-voltage behavior is explained using a linearized Butler-Volmer relationship, showing that the measured ohmic response corresponds to the low-overpotential limit of charge-transfer kinetics. Analytical results demonstrate that, for typical module materials-3.2-mm soda-lime glass and 0.45-mm encapsulant-the dominant modulators to PID leakage current are the glass surface resistance (under dry-surface conditions), the glass bulk capacitance, and the encapsulant resistance (under wet-surface conditions), with soda lime glass surface and EVA/POE encapsulant resistances primarily governing steady-state current. The proposed electrochemical model is validated against measured leakage-current data, showing good agreement in both the magnitude and the time-dependent evolution of PID leakage current.
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PV encapsulant formulations and stress test conditions influence dominant degradation mechanisms
Polyethylene-based poly(ethylene-co-vinyl acetate) (EVA), polyolefin elastomer (POE), and thermoplastic polyolefin (TPO) are common polymer candidates for photovoltaic (PV) module encapsulants. The choice of encapsulant must be carefully considered in novel module designs, such as bifacial glass/glass laminates, to limit performance degradation through loss of optical transmittance, mechanical integrity, and corrosion - as well as potential-induced degradation. Encapsulant quality and resilience against environmental stressors are readily influenced by the additives in the encapsulant formulation. Here, we show that, the changes in optical transmittance after UV aging result from the discoloration caused by interactions between additives, and optical scattering from changes in the polymer crystal structure. We observed competing cross-linking and chain scission mechanisms, with their kinetics influenced by the presence of oxygen and elevated temperatures. Increasing chamber temperatures from 55 °C to 85 °C during the UV stress test amplified encapsulant discoloration and promoted polymer cross-linking, causing severe, irreversible damage that remains to be proven field relevant. Damp heat aging was found to be insufficient to produce significant encapsulant degradation; however, combining stress tests sequentially allowed detection of further degradation beyond the limitations of the damp heat test alone. Appropriate degradation screening methods are necessary to uncover potential encapsulant weaknesses.
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Electrochemical Degradation Modes in Bifacial Silicon Photovoltaic Modules
Motivated by the rapidly rising deployment of bifacial monocrystalline-silicon photovoltaics (PV), we investigate the durability of various PV module packaging configurations with transparent coverings on both the front and rear sides of the module. We use a series of bifacial passivated emitter and rear cell (p-PERC) mini-modules with systematically varying outer cover materials (glass/glass, G/G, or glass/transparent backsheet, G/TB) and encapsulant chemistries (poly [ethylene-co-vinyl acetate], EVA; or polyolefin, POE). We study degradation modes over 1,000 hours of combined damp heat (DH) exposure and high system voltages that can cause potential-induced degradation (PID) under positive, zero, or negative 1,000 V cell-to-frame bias. We analyze the degradation modes using a combination of current-voltage measurements, impedance spectroscopy, external quantum efficiency, and spatially resolved luminescence and thermal imaging. Our results highlight various types of degradation including shunting, enhanced recombination, and series resistance increases, and we use spatially resolved characterization to separately identify the localized effects. We show that multiple PID and moisture-ingress degradation modes severely affect EVA-containing modules, with previously reported PID processes under negative-bias DH and a unique observation of rear-side surface recombination in G/EVA/G modules under positive-bias DH. We observe significantly less degradation in POE-containing modules, where the G/POE/G configuration exhibits minimal degradation under all stress conditions that we employ.
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Field Study of Nighttime Leakage Currents in Bifacial PV Modules: Correlation with Atmospheric Electric Field Data
Leakage currents measured on PV modules in the field originate from a potential difference between the modules' frame and the cells. They can be a relative indicator of Potential-Induced Degradation (PID) severity, especially when comparing the same module design in a different environment. As modules are not operating at night, no leakage current should be observed but our team has reported several events of nighttime leakage currents on bifacial PV modules. These events have been firstly observed during a thunderstorm that are characterized by strong atmospheric electrical field values. This lead us to believe that nighttime leakage currents could originate from the atmospheric electric charges. In this paper, we correlate nighttime leakage currents measured on bifacial PV modules with field mill data to identify the origin of nighttime leakage currents. Our results show that so far, no leakage currents at night occur when the atmospheric electric field is between 0 and 150–200 V/m (standard value for fair weather). As soon as the atmospheric electric field is out of this range, leakage currents are observed with or without rain involved. This suggests a transport of charged particles from the atmosphere to the modules' frame. A combination of heavy rain with strong atmospheric electric field results into high nighttime leakage currents with a magnitude up to 8 times higher than what observed during the day with -1500V applied. This is explained by an easier transport of the charged particles through the water droplets. Based on these results, leakage currents observed during the day might not be only due to the inherent potential difference between the frame and the cells depending on the atmospheric electric field activity. We believe that it should be taken into account in PID studies.
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Cell-level reliability testing procedures for CIGS photovoltaics
The reliability of photovoltaics is commonly studied at the module level. Many reliability problems originate from module attributes, such as metal interconnections to cells, junction boxes. However, significant work in reliability can also be done prior to module design. Testing for reliability earlier in the research cycle increases the probability of avoiding common module reliability problems before cell changes are implemented on a large scale. Cell-level reliability studies can thus lower the rates of module failures in the field and provide confidence to investors that new technologies will perform as advertised. This report summarizes how we investigated three reliability concerns in Cu(In,Ga)Se 2 (CIGS) photovoltaics at the cell level: metastability, shading-induced damage, and potential-induced degradation (PID). We find that examining these concerns required developing robust measurement protocols including the fabrication of novel testing structures. This information will allow readers to incorporate sound metrics for investigating reliability phenomena and aid their studies of cell and module reliability improvements.
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Advanced Thin Film Core Technology: CIGS Final Technical Report (FTR)
Cu(In,Ga)Se 2 (CIGS) thin-film photovoltaics are a high-efficiency and reliable technology. This project completed research in two important areas and was designed to work collaboratively with industrial partners. Task 1: Alkali Science focused on alkali post-deposition treatments (PDT). PDTs have been instrumental in the dramatic voltage improvements that have moved CIGS device efficiencies from 20% to 23.35% [1]. Based on a survey of CIGS companies at the beginning of the project, the single biggest breakthrough for the CIGS community would be a mechanistic understanding of the role of alkalis in the material system. Significant accomplishments of Task 1: Alkali Science: 1) KF post-deposition treatments were shown to improve lifetime, open-circuit voltage (VOC), and efficiency of industrial partner samples, even when done as a later step, separate from the original CIGS deposition. 2) KF boosted efficiency when incorporated at the end of the third stage of NREL CIGS growth. 3) XPS characterization of CIGS surfaces with and without PDTs led to a proposed mechanism whereby K drives structural transformation at 350 degrees C that is locked in at room temperature even after K is rinsed away. 4) Published recipes for KF and RbF PDTs. Literature to date did not provide enough detail to quickly reproduce experimental results. 5) Identified most important parameters (RbF cell temperature and lamp setpoint temperature) and set boundaries for successful RbF PDTs. The purpose of Task 2: Cell-level Reliability was to overcome the largest challenges to investor confidence and long product lifetime in CIGS-based photovoltaic products: metastability, shading-induced hot spots, and potential-induced degradation (PID). Key findings were made in each of these areas by studying CIGS reliability at the cell level: 1) Published NREL's cell-level reliability testing procedures along with challenges that were encountered while developing them. These were also distributed to the community through an MRS conference presentation. 2) Decreased metastability by adding a CdS hole-injection layer between the CIGS and Zn(O,S) in the device stack. It also improved device performance. Materials other than CdS can be used for the same purpose. 3) Reduced front-glass PID by replacing soda-lime glass with low-Na borosilicate glass. 4) Found that PID depends on leakage current and light/electrical bias. This will help labs avoid test-specific degradation. 5) Discovered that CIGS can suffer from two different types of PID with different mechanisms. Front is slower and leads to shunting ZnO. Back is faster and degrades the p-n junction. 6) Holding cells at open circuit slows PID compared to short circuit. This affects testing protocols for glass/glass modules.
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Field Study of Nighttime Leakage Current in Bifacial PV modules: Correlation with Atmospheric Electric Field data
We demonstrate a charges transfer from the atmosphere to the modules’ frame in the field and discuss the mechanism - leakage current measured in the field are not only related to the PV module operation - this is crucial to consider in potential-induced degradation modeling
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Interconnect: Cooperative Research and Development Final Report, CRADA Number CRD-13-00507 (Project 4)
This CRADA modification involves analyses on a variety of CdTe-PV related materials, test structures, solar cells, and modules produced at FSLR and/or NLR and adds analysis related to module degradation and reliability. Materials will be provided by FSLR, NLR, and/or by interleaving FSLR and NLR layers and processes. Module reliability activities will include technical risk assessment, materials characterization, module and test structure characterization, modeling, accelerated test development, and outdoor testing.
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