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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

All sources NASA NTRS DOE OSTI

DOE OSTI2024

Power Module Precursors and Prognostics

The ongoing work involves 1) the identification and evaluation of various electric signals as indicators to module failure and precursors to aging, and 2) the development of corresponding detection techniques. In the current phase, 1) the increase of on-state resistance is selected as the precursor to the power cycle aging of silicon carbide power MOSFET modules based on review and rest data. 2) A detection method leveraging the gate voltage fluctuations magnitude during commutation transients to inform the on-state resistance increase is investigated which has the benefit of being able to be integrated into the gate driver. A dedicated detection circuit for implementation is designed and simulated and is currently in fabrication.

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2025

Thermal Optimization and Experimental Demonstration of a Silicon Carbide, Half-Bridge Power Module

This paper describes modeling and experimental work to design and demonstrate a silicon carbide (SiC), single-side-cooled power module. Two SiC metal-oxide-semiconductor field-effect transistors (MOSFET) were used for each switch position and packaged on a metalized ceramic substrate. Thermal modeling was first conducted to optimize the module packaging to minimize junction-to-fluid thermal resistance and device temperature variations. This procedure identified the optimal device placement and baseplate thickness to maximize thermal performance. A heat exchanger - incorporating impinging jets of water-ethylene glycol - was designed to cool the module's baseplate to minimize thermal resistance and pumping power. The heat exchanger used relatively low fluid velocities (<1.5 m/s) to minimize erosion-corrosion effects and relatively large fluid channel sizes (>=1 mm) to prevent clogging. The power module concept was fabricated, and experiments were conducted to measure its thermal performance. Direct current was used to power the module devices, and junction temperatures were measured via device temperature-sensitive parameters. The experimental results were found to be in good agreement with model predictions (within 2%) and yielded junction-to-fluid thermal resistance values as low as about 15 mm2 K/W at relatively low pumping power values. The results demonstrate the improved performance associated with jet impingement cooling and represent an improvement over existing channel-flow-type cold plates, which can enable improvements to power density and reliability.

36 MATERIALS SCIENCE↗

NASA NTRS1991

Driver Circuit For High-Power MOSFET's

Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

Letzer, Kevin A.↗

DOE OSTI2026

Feasibility of Passive MOSFET Paralleling for Photovoltaic Current-Voltage Curves

Current-voltage curves are an important method of characterizing Photovoltaic (PV) Modules. NREL has developed several low-cost MOSFET-based devices that can characterize PV cells and modules. The size of PV modules that can be measured is limited by the power limitations of a single MOSFET. By using multiple MOSFET devices, each can operate at a lower current, paralleled on resistance is also decreased allowing for higher power loads. Operating multiple devices in parallel can cause an imbalance in current, thus causing some devices to conduct more, pushing them into a thermal runaway condition. To investigate this, an active feedback circuit was tested with paralleled devices using a PV module load. The efficacy, limitations, and design considerations of using parallel MOSFET loads for PV characterization are explored. This work is not new, but the implementation of a paralleled architecture in a low cost characterization tool is novel.

14 SOLAR ENERGY↗

NASA NTRS1991

Dc-To-Dc Converter Uses Reverse Conduction Of MOSFET's

In modified high-power, phase-controlled, full-bridge, pulse-width-modulated dc-to-dc converters, switching devices power metal oxide/semiconductor field-effect transistors (MOSFET's). Decreases dissipation of power during switching by eliminating approximately 0.7-V forward voltage drop in anti-parallel diodes. Energy-conversion efficiency increased.

Gruber, Robert P.↗

DOE OSTI2025

PID-Regulated Heating System for PIP-II Reference Line

The Proton Improvement Project-2 centers on building a new superconducting linear particle accelerator (Linac) at Fermilab. At the heart of the accelerator is the reference line, a critical system that defines the ideal path for the particle beam as it passes through magnets, RF cavities, and other beamline elements. Temperature stability is crucial for the reliable operation of RF components, such as mixers and filters. Fluctuations affect key performance parameters like conversion loss, isolation, and linearity. To mitigate any drift caused by ambient temperature changes, a heating plate assembly is utilized to maintain key components at a controlled temperature of 40°C. The system utilizes an aluminum 36”x36”x0.5” heat plate powered by a MOSFET-based control circuit, delivering approximately 460 W of thermal energy through a resistor array. Real-time temperature feedback is provided by a PT100 Resistance Temperature Detector (RTD), which interfaces with a Proportional–Integral–Derivative (PID) control algorithm to maintain closed-loop temperature regulation. The control signal actively modulates the gate voltage of an N channel MOSFET, dynamically adjusting power delivery in response to deviations from the temperature setpoint. Simulations and LTspice models validate the functionality and responsiveness of the circuit under varying conditions. The prototype has successfully demonstrated stable thermal control, paving the way for integration into the PIP-II infrastructure. The final design will feature an expanded resistor array, as well as communication with a PLC for continuous data acquisition and diagnostics. This work directly supports Fermilab’s broader mission by contributing to the stability and reliability of core accelerator systems, enhancing the precision of particle beam delivery for future physics experiments.

Mosher, Alexander [Fermilab]↗

NASA NTRS2007

Circuit and Method for Communication Over DC Power Line

A circuit and method for transmitting and receiving on-off-keyed (OOK) signals with fractional signal-to-noise ratios uses available high-temperature silicon- on-insulator (SOI) components to move computational, sensing, and actuation abilities closer to high-temperature or high-ionizing radiation environments such as vehicle engine compartments, deep-hole drilling environments, industrial control and monitoring of processes like smelting, and operations near nuclear reactors and in space. This device allows for the networking of multiple, like nodes to each other and to a central processor. It can do this with nothing more than the already in-situ power wiring of the system. The device s microprocessor allows it to make intelligent decisions within the vehicle operational loop and to effect control outputs to its associated actuators. The figure illustrates how each node converts digital serial data to OOK 18-kHz in transmit mode and vice-versa in receive mode; though operations at lower frequencies or up to a megahertz are within reason using this method and these parts. This innovation s technique modulates a DC power bus with millivolt-level signals through a MOSFET (metal oxide semiconductor field effect transistor) and resistor by OOK. It receives and demodulates this signal from the DC power bus through capacitive coupling at high temperature and in high ionizing radiation environments. The demodulation of the OOK signal is accomplished by using an asynchronous quadrature detection technique realized by a quasi-discrete Fourier transform through use of the quadrature components (0 and 90 phases) of the carrier frequency as generated by the microcontroller and as a function of the selected crystal frequency driving its oscillator. The detected signal is rectified using an absolute-value circuit containing no diodes (diodes being non-operational at high temperatures), and only operational amplifiers. The absolute values of the two phases of the received signal are then summed and hard limited (digitized) by comparing them to a reference level and are then input into a microprocessor as a serial bit stream. The quasi-discrete Fourier transform is performed in high-temperature components (operational amplifiers, analog switches, resistors, and capacitors). The demodulated signal is a serial data stream that is input to the UART (universal asynchronous receiver transmitter) receiver pin of the microprocessor. The OOK of the carrier frequency uses the output of the UART pin as an enabling signal that drives the gate of the MOSFET. Logic low bits enable the carrier frequency (realized by using the 0 phase signal from the microcontroller, though either phase may be used) to be DC-coupled to the power supply bus through a current-limiting resistor mounted between the MOSFET drain and the supply rail. The presence of logic lows on the power supply rail is realized by carrier bursts while logic highs are realized by the absence of bursts.

Krasowski, Michael J.↗

DOE OSTI2025

Rapid Prototyping Techniques for Organic Direct-Bonded-Copper Power Modules

Organic Direct-Bonded-Copper (ODBC) is a novel packaging technology for power modules which allows higher flexibility in layout design. In this work, a set of rapid prototyping techniques are developed for ODBC modules based on a polyimide dielectric material. These techniques enable fast and low-cost fabrication of modules with 3-Dimensional (3D) layout features. An example half-bridge (HB) silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) module is designed and prototyped using the proposed techniques aiming at ultra-low power loop inductance. Finite element analysis (FEA)-circuit co-simulations results and experimental results validate an approximately 0.71nH power loop inductance for the example module design.

36 MATERIALS SCIENCE↗

DOE OSTI2024

An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs

The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗

DOE OSTI2024

Power Module Precursors and Prognostics

This project focuses on finding and utilizing electrical properties (precursors) of power electronic devices and modules whose changes have strong correlations with different modes and levels of degradations in order to realize online and lightweight state of health evaluation and fault diagnosis. Results from this project will contribute to higher safety, reliability, and power density of power electronic components. The approaches mainly include reviewing academic literature and industry practices for state of the art precursor identification and extraction, accelerated life cycles (ALC) of various power modules to create different degradations in-house, and developing techniques for gate-driver-integratable precursor detection circuit. In FY24, the results includes two sets of definitively detected aging precursors (on-state resistance and gate threshold voltage) for two sets of power modules respectively, controlled accelerated lifetime cycling of multiple silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) modules, and the development and validation of a gate voltage detection system.

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2025

Thermal Modeling and Limitations for Power Electronics Embedded in Medium-Voltage Cables

As next-generation energy technologies gain traction and power demand increases, the existing electrical infrastructure faces significant stress, prompting innovative solutions to enhance the grid's capacity and lifespan. This work explores the possibility of embedding medium-voltage (MV) power electronics directly inline with the cable, and the resulting thermal challenges. Since the majority of power distribution cables installed in the U.S. are passively cooled, the work focuses primarily on passive cooling, with an emphasis on the limitations of axial heat spreading within the cable. To date, literature on axial spreading of high incident heat loads on cables and cable environments is limited, typically reporting cases with <10 W of incident heat load. This work will explore the considerations, limits, and tradeoffs of cable-embedded heat loads significantly larger than the cable losses. Both external and internal effects are modeled analytically in nondimensional terms via a Biot number analysis, allowing fundamental limits and tradeoffs to be derived. The work culminates in the design and experimental validation of a cable-embedded thermal system capable of passively dissipating 300 W of heat from a coaxial SiC mosfet switch module over a length of 20 cm, thus validating the possibility of MV cable-embedded power electronics from a thermal standpoint.

24 POWER TRANSMISSION AND DISTRIBUTION↗

NASA NTRS1993

Design of power electronics for TVC EMA systems

The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

Nelms, R. Mark↗

NASA NTRS1989

The 5-kW arcjet power electronics

The initial design and evaluation of a 5 kW arcjet power electronics breadboard which as been integrated with a modified 1 kW design laboratory arcjet is presented. A single stage, 5 kW full bridge, pulse width modulated (PWM), power converter was developed which was phase shift regulated. The converter used metal oxide semiconductor field effect transistor (MOSFET) power switches and incorporated current mode control and an integral arcjet pulse ignition circuit. The unoptimized power efficiency was 93.5 and 93.9 percent at 5 kW and 50A output at input voltages of 130 and 150V, respectively. Line and load current regulation at 50A output was within one percent. The converter provided up to 6.6 kW to the arcjet with simulated ammonia used as a propellant.

Gruber, R. P.↗

NASA NTRS1989

5-kW arcjet power electronics

Gruber, R. P.↗

NASA NTRS1994

Electronically Variable Resistive Load

Electronically variable linear resistive load circuit synthesized by use of analog components to control conductance of power metal oxide/semiconductor field-effect transistors, MOSFET's. Circuit has modular configuration, in which single controller drives parallel load units. A 3-kW load module that exhibits submicrosecond response time with respect to control signal demonstrated.

Niedra, Janis M.↗

DOE OSTI2025

Design and Commission of Solid State Switch Driver in SLAC Subbooster Modulator

The LINAC sub-booster modulator is a pulsed power supply to provide a 30kV pulse to drive a klystron in SLAC LINAC. It has utilized vacuum tetrode as pulse switch for more than 60 years. With the vacuum tetrode availability becoming less and its cost surging, a natural choice is to use solid state switch in this pulsed power modulator. To commission solid state switch in LINAC sub-booster modulator, a driver board is designed to drive a BEHLKE HTS-LC2 series MOSFET based switches. The design concept and some concerns in design will be presented. The driver board is universal for all HTS-LC2 series switches because they share the same driver signals and connections. After the driver is commissioned, two AI systems are introduced to design one core part of the driver, the results are presented here. During the commission of the driver board in the LINAC sub-booster modulators, some problems happened and were addressed.

AI Circuit Design↗

NASA NTRS1990

High-Voltage Square-Wave Generator

Fast switching circuit puts out rectangular pulses of order of kilovolt or greater at typical repetition frequencies as high as hundreds of kilohertz and with rise times as short as 50 ns. Designed around power metal oxide/semiconductor field-effect transistors (MOSFET's). Optically isolated power MOSFET's in series rapidly switch output between high voltages V(sub 1) and V(sub 2). Used to supply power to pulsed laser or to modulate beam of charged particles in laboratory experiment or industrial process.

Bernius, Mark T.↗

NASA NTRS2014

High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

Electric Propulsion↗