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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

2D Quantum Simulation of MOSFET Using the Non Equilibrium Green's Function Method

The objectives this viewgraph presentation summarizes include: (1) the development of a quantum mechanical simulator for ultra short channel MOSFET simulation, including theory, physical approximations, and computer code; (2) explore physics that is not accessible by semiclassical methods; (3) benchmarking of semiclassical and classical methods; and (4) study other two-dimensional devices and molecular structure, from discretized Hamiltonian to tight-binding Hamiltonian.

Svizhenko, Alexel↗
NASA NTRS2001

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Svizhenko, Alexei↗
NASA NTRS2000

Hierarchical Statistical 3D ' Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches

When MOSFETs are scaled to deep submicron dimensions the discreteness and randomness of the dopant charges in the channel region introduces significant fluctuations in the device characteristics. This effect, predicted 20 year ago, has been confirmed experimentally and in simulation studies. The impact of the fluctuations on the functionality, yield, and reliability of the corresponding systems shifts the paradigm of the numerical device simulation. It becomes insufficient to simulate only one device representing one macroscopical design in a continuous charge approximation. An ensemble of macroscopically identical but microscopically different devices has to be characterized by simulation of statistically significant samples. The aims of the numerical simulations shift from predicting the characteristics of a single device with continuous doping towards estimating the mean values and the standard deviations of basic design parameters such as threshold voltage, subthreshold slope, transconductance, drive current, etc. for the whole ensemble of 'atomistically' different devices in the system. It has to be pointed out that even the mean values obtained from 'atomistic' simulations are not identical to the values obtained from continuous doping simulations. In this paper we present a hierarchical approach to the 'atomistic' simulation of aggressively scaled decanano MOSFETs. A full scale 3D drift-diffusion'atomostic' simulation approach is first described and used for verification of the more economical, but also more restricted, options. To reduce the processor time and memory requirements at high drain voltage we have developed a self-consistent option based on a thin slab solution of the current continuity equation only in the channel region. This is coupled to the Poisson's equation solution in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison with the full self-consistent solution. At low drain voltage only single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. A pilot version of a hydrodynamic 'atomistic' simulator has been developed in order to study the effect of the nonequilibrium, non local transport in decanano MOSFETs on the random dopant induced current fluctuations. For the first time we have also applied the density gradient approach in 3D to investigate the effect of the quantum confinement on the threshold voltage fluctuations. The developed 'atomistic' simulation techniques have been applied to study various fluctuation resistant MOSFET architectures including epitaxial and delta doped devices.

Asenov, Asen↗
NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation solver developed by Lucent Technologies. This implementation approach permits rapid development and enhancement of models, as well as run-time modifications and model switching. We show that even in typical bulk transport devices such as P-N diodes and BJTs, DG quantum effects can significantly modify the I-V characteristics. Quantum effects are shown to be even more significant in small, surface transport devices, such as sub-0.1 micron MOSFETs. In thin-oxide MOS capacitors, we find that quantum effects may reduce gate capacitance by 25% or more. The inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements. Significant quantum corrections also occur in the I-V characteristics of short-channel MOSFETs due to the gate capacitance correction.

Biegel, Bryan A.↗
NASA NTRS2000

Statistical 3D 'Atomistic' Simulation of Decanano MOSFETs

A 3D statistical 'atomistic' simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the 'atomistic' simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architectures utilising epitaxial-layers and delta-doping. The effect of the random doping in the polysilicon gate on the threshold voltage fluctuations has also been thoroughly investigated. The influence of a single-charge trapping on the channel conductivity in decanano MOSFETs is studied in the 'atomistic' framework as well. Quantum effects are taken into consideration in our 'atomistic' simulations using the density gradient formalism.

Asenov, Asen↗
NASA NTRS2018

Securing and Auto-Synchronizing Communication over Free-Space Optics Using Quantum Key Distribution and Chaotic Systems

Free-Space Optical (FSO) communication provides very large bandwidth, relatively low cost, low power, low mass of implementation, and improved security when compared to conventional Free-Space Radio-Frequency (FSRF) systems. In this paper, we demonstrate a communication protocol that demonstrates improved security and longer-range FSO communication, compared to existing FSO security techniques, such as N-slit interferometers. The protocol integrates chaotic communications with Quantum Key Distribution (QKD) techniques. A Lorenz chaotic system, which is inherently secure and auto-synchronized, is utilized for secure data communications over a classical channel, while QKD is used to exchange crucial chaotic system parameters over a secure quantum channel. We also provide a concept of operations for a NASA mission combining chaotic communications and QKD operating synergistically in an end-to-end space communications link. The experimental simulation results and analysis are favorable towards our approach.

Chaotic Communication↗
NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗
NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗
NASA NTRS2009

Two-Dimensional Quantum Model of a Nanotransistor

A mathematical model, and software to implement the model, have been devised to enable numerical simulation of the transport of electric charge in, and the resulting electrical performance characteristics of, a nanotransistor [in particular, a metal oxide/semiconductor field-effect transistor (MOSFET) having a channel length of the order of tens of nanometers] in which the overall device geometry, including the doping profiles and the injection of charge from the source, gate, and drain contacts, are approximated as being two-dimensional. The model and software constitute a computational framework for quantitatively exploring such device-physics issues as those of source-drain and gate leakage currents, drain-induced barrier lowering, and threshold voltage shift due to quantization. The model and software can also be used as means of studying the accuracy of quantum corrections to other semiclassical models.

Govindan, T. R.↗
NASA NTRS2001

Quantum Mechanical Study of Nanoscale MOSFET

The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

Svizhenko, Alexei↗
NASA NTRS2000

2D Quantum Mechanical Study of Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRSDate not supplied

Modeling Electro-Optic Frequency Comb Generation as a Pump Source for Quantum Communications

The Quantum Communications group at NASA GRC is focused on developing technologies and system architectures to enable future space-based quantum networks. High-repetition rate pulsed pump lasers are needed because the signal on the quantum channel cannot be amplified, hence entanglement generation rates can only be increased through high-rate pumping. Additionally, tunability in center frequency, pulse width, and repetition rate allows for a wider parameter space over which to optimize quantum channel frequency conversion efficiency, joint spectral engineering, and channel synchronization for high-fidelity entanglement swapping –a necessary stepping-stone towards quantum repeater development. One of the most flexible methods for high-repetition rate pulse generation is through spectral shaping–generating a frequency comb from a continuous-wave(CW)laser using electro-optic modulators (EOMs). As a result, this project focuses on analytically modeling and simulating the effects various EOMs such as phase and intensity modulators have on a CW source. Generating a tunable frequency comb as the pump source allows us to conveniently fine-tune the central frequency, repetition rate, and the spectral shape of our source to match the strict optimal parameters for any given entanglement source considered in the future. These models and simulations are to be used for comparison purposes for future experiments as well as for providing the Quantum Communications group a convenient tool to understand the effects of manipulating various parameters have on the outgoing frequency comb.

Electro-optic modulator↗
NASA NTRS2002

Influence of Scattering on Ballistic Nanotransistor Design

Importance of this work: (1) This is the first work to model electron-phonon scattering within a quantum mechanical approach to nanotransistors. The simulations use the non equilibrium Green's function method. (2) A simple equation which captures the importance of scattering as a function of the spatial location from source to drain is presented. This equation helps interpret the numerical simulations. (3) We show that the resistance per unit length in the source side is much larger than in the drain side. Thus making scattering in the source side of the device much more important than scattering in the drain side. Numerical estimates of ballisticity for 10nm channel length devices in the presence of of electron-phonon scattering are given. Based on these calculations, we propose that to achieve a larger on-current in nanotransistors, it is crucial to keep the highly doped source extension region extremely small, even if this is at the cost of making the highly doped drain extension region longer.

Anantram, M. P.↗
NASA NTRS2003

Intersubband Transitions in InAs/AlSb Quantum Wells

We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k-p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.

Li, J.↗
NASA NTRS1983

Maximizing the quantum efficiency of microchannel plate detectors - The collection of photoelectrons from the interchannel web using an electric field

High quantum efficiency and two-dimensional imaging capabilities make the microchannel plate (MCP) a suitable detector for a sky survey instrument. The Extreme Ultraviolet Explorer satellite, to be launched in 1987, will use MCP detectors. A feature which limits MCP efficiency is related to the walls of individual channels. The walls are of finite thickness and thus form an interchannel web. Under normal circumstances, this web does not contribute to the detector's quantum efficiency. Panitz and Foesch (1976) have found that in the case of a bombardment with ions, electrons were ejected from the electrode material coating the web. By applying a small electric field, the electrons were returned to the MCP surface where they were detected. The present investigation is concerned with the enhancement of quantum efficiencies in the case of extreme UV wavelengths. Attention is given to a model and a computer simulation which quantitatively reproduce the experimental results.

Taylor, R. C.↗
NASA NTRSDate not supplied

Modeling and simulation of space-based entanglement distribution

In this talk we present a model for analyzing space-based entanglement distribution links. In particular, we analyze deterministic entanglement distribution links relevant to quantum communication applications where all communication nodes must be synchronized with deterministic photon arrival times. The focus is on systems operating within practical limitations set by current technology. The architectures studied in this work are based on all-photonic links with probabilistic (memory-less) entanglement swapping used to signal the success of the entanglement distribution without destroying the entangled state. An end-to-end link model is described which accounts for satellite orbital mechanics as well as the physical effects of entangled photon pair sources, space-to-ground atmospheric channels, two-photon interference, pointing and tracking, and photon counting detectors with and without photon number resolution (this is joint work with Robert Manning, Ian Nemitz, and Bryan Welch).

quantum communication↗
NASA NTRS2019

Development of Large-Scale Magnetic Calorimeter Arrays

We describe performance of large-scale arrays of metallic magnetic calorimeters (MMCs) we are developing to meet requirements of the Lynx X-ray Microcalorimeter (LXM) instrument in the astrophysics mission concept Lynx. We have fabricated prototypes with 55,800 x-ray pixels thermally connected to 5,688 MMC sensors. Subarrays demonstrate three types of pixels, which have different energy and spatial resolution goals in LXM. Pixel pitch is 50 or 25 µm. For two subarrays, use of position sensitive detectors, in a "hydra" configuration with 25 x-ray absorbers per sensor, helps achieve a large focal plane by increasing pixel count relative to readout channels. Since each absorber has a different thermal link to its sensor, it generates a different pulse shape and enables discrimination of pixel position. Superconducting wiring from all sensors was brought out to the perimeter of the overall array using multiple buried metal layers planarized by Chemical Mechanical Planarization to achieve high critical current, low inductance, and high fabrication yield. An automated, algorithmic approach was used to layout the complex wiring pattern. For readout with existing small arrays of Superconducting Quantum Interference (SQUID) amplifiers, 112 selected pixels were connected to wire bond pads. In hydras, we successfully identified 25 pulse shapes using rise-time and pulse height. Pulse shapes were similar to simulations. We measured noise and responsivity to substrate temperature and applied x-ray pulses. While we designed sensors to have high inductance to relative to stray inductance of wiring, we had only mismatched (lower input inductance) SQUIDs available in our current apparatus, giving non-optimized resolution. We compared measured and calculated energy resolutions. We have the required sensitivity to reach < 3 eV FWHM resolution for 6 keV x-rays, required for the LXM Main Array, and the ability to discriminate the 25 different absorber pixels down to energies < 300 eV.

microcalorimeters↗
NASA NTRS1999

Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

Biegel, Bryan A.↗