Quantum effects in elastic molecular scattering.
Quantum effects in elastic scattering of atoms and molecules, noting classical treatment
MOLECULAR COLLISION↗
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Accurate experimental and theoretical comparisons between superconductor-insulator-superconductor mixers showing weak and strong quantum effects
A systematic study of the gain and noise in superconductor-insulator-superconductor mixers employing Ta based, Nb based, and Pb-alloy based tunnel junctions was made. These junctions displayed both weak and strong quantum effects at a signal frequency of 33 GHz. The effects of energy gap sharpness and subgap current were investigated and are quantitatively related to mixer performance. Detailed comparisons are made of the mixing results with the predictions of a three-port model approximation to the Tucker theory. Mixer performance was measured with a novel test apparatus which is accurate enough to allow for the first quantitative tests of theoretical noise predictions. It is found that the three-port model of the Tucker theory underestimates the mixer noise temperature by a factor of about 2 for all of the mixers. In addition, predicted values of available mixer gain are in reasonable agreement with experiment when quantum effects are weak. However, as quantum effects become strong, the predicted available gain diverges to infinity, which is in sharp contrast to the experimental results. Predictions of coupled gain do not always show such divergences.
Mcgrath, W. R.↗
Numerical evaluation of quantum effects on transport cross sections.
Numerical evaluation of quantum effects on transport cross sections for Lennard-Jones gas temperature and statistics effects
TEMPERATURE EFFECT↗
Numerical evaluation of quantum effects on transport cross sections
Numerical evaluation of quantum effects on transport cross sections of Lennard-Jones gas
NUMERICAL ANALYSIS↗
Quantum Effects in Cosmochemistry: Complexation Energy and Van Der Waals Radii
The subject of quantum effects in cosmochemistry was recently addressed with the goal of understanding how they contribute to Q-phase noble gas abundances found in meteorites. It was the pursuit of the Q-phase carrier of noble gases and their anomalous abundances that ultimately led to the identification, isolation, and discovery of presolar grains. In spite of its importance, Q-phase investigations have led a number of authors to reach conclusions that do not seem to be supported by quantum chemistry. In view of the subject's fundamental significance, additional study is called for. Two quantum properties of Q-phase candidates known as endohedral carbon-cage clathrates such as fullerenes will be addressed here. These are complexation energy and instability induced by Pauli blocking (exclusion principle).
Mittlefehldt, D. W.↗
Competing Classical and Quantum Effects in Shape Relaxation of a Metallic Island
Pb islands grown on a silicon substrate transform at room temperature from the initially flattop facet geometry into an unusual ring, shape with a volume-preserving mass transport process catalysed by the tip electrical field of a scanning tunnelling microscope. The formation of such ring shape morphology results from the competing classical and quantum effects in the shape relaxation. The latter also leads to a sequential regrowth on alternating, strips of the same facet defined by the underlying substrate steps, showing for the first time the dynamical impact of the quantum size effect on the stability of a nanostructure.
Okamoto, Rowland H.↗
The origins of cosmic rays and quantum effects on gravity
The energy spectrum of primary cosmic rays is explained by particles emitted during a thermal expansion of explosive objects inside and near the galaxy, remnants of which may be supernova and/or active talaxies, or even stars or galaxies that disappeared from our sight after the explosion. A power law energy spectrum for cosmic rays, E to the (-alpha -1, is obtained from an expansion rate T is proportional to R to the alpha. Using the solution of the Einstein equation, we obtain a spectrum which agrees very well with experimental data. The implication of an inflationary early universe on the cosmic ray spectrum is also discussed. It is also suggested that the conflict between this model and the singularity theorem in classical general relativity may be eliminated by quantum effects.
Tomozawa, Y.↗
Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub 100 nm MOSFETs Due to Quantum Effects: A 3-D Density-Gradient Simulation Study
In this paper we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub 100 nm MOSFETs. The simulations have been performed using a 3-D implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation approach. This results in a self-consistent 3-D quantum mechanical picture, which implies not only the vertical inversion layer quantisation but also the lateral confinement effects related to current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical dopant fluctuations, is an increase in both threshold voltage fluctuations and lowering. At the same time, the random dopant induced threshold voltage lowering partially compensates for the quantum mechanical threshold voltage shift in aggressively scaled MOSFETs with ultrathin gate oxides.
Asenov, Asen↗
Competing Classical and Quantum Effects in Shape Relaxation of a Metallic Nanostructure
We demonstrate for the first time that the quantum size effect (QSE) plays a competing role along side the classical thermodynamic effect in the shape relaxation of a small metallic island. Together, these effects transforms a lead(Pb) island grown on Si(111) substrate from its initially flattop faceted morphology to a peculiar ring-shape island, a process catalysed by the tip electric field of a scanning tunnelling microscope (STM). We shall show for the first time how QSE affects the relaxation process dynamically. In particular, it leads to a novel strip-flow growth and double-step growth on selective strips of a plateau inside the ring, defined by the substrate steps more than 60?0?3 below. It appears that atoms diffusing on the plateau can clearly (sub i)(deg)sense(sub i)+/- the quantized energy states inside the island and have preferentially attached to regions that further reduces the surface energy as a result of the QSE, limiting its own growth and stabilizing the ring shape. The mechanism proposed here offers a sound explanation for ring shape metal and semiconductor islands observed in other systems as well.
Chen, Dongmin↗
Quantum effects in small-angle molecular-beam scattering
Quantum mechanics in small angle molecular beam scattering
MOLECULAR BEAM↗
All about Eve: Secret Sharing using Quantum Effects
This document discusses the nature of light (including classical light and photons), encryption, quantum key distribution (QKD), light polarization and beamsplitters and their application to information communication. A quantum of light represents the smallest possible subdivision of radiant energy (light) and is called a photon. The QKD key generation sequence is outlined including the receiver broadcasting the initial signal indicating reception availability, timing pulses from the sender to provide reference for gated detection of photons, the sender generating photons through random polarization while the receiver detects photons with random polarization and communicating via data link to mutually establish random keys. The QKD network vision includes inter-SATCOM, point-to-point Gnd Fiber and SATCOM-fiber nodes. QKD offers an unconditionally secure method of exchanging encryption keys. Ongoing research will focus on how to increase the key generation rate.
no cloning theorem↗
Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques
A density-gradient (DG) model is used to calculate quantum-mechanical corrections to classical carrier transport in MOS (Metal Oxide Semiconductor) inversion/accumulation layers. The model is compared to measured data and to a fully self-consistent coupled Schrodinger and Poisson equation (SCSP) solver. Good agreement is demonstrated for MOS capacitors with gate oxide as thin as 21 A. It is then applied to study carrier distribution in ultra short MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) with surface roughness. This work represents the first implementation of the DG formulation on multidimensional unstructured meshes. It was enabled by a powerful scripting approach which provides an easy-to-use and flexible framework for solving the fourth-order PDEs (Partial Differential Equation) of the DG model.
Rafferty, Connor S.↗
Effective-field-theory model for the fractional quantum Hall effect
Starting directly from the microscopic Hamiltonian, a field-theory model is derived for the fractional quantum Hall effect. By considering an approximate coarse-grained version of the same model, a Landau-Ginzburg theory similar to that of Girvin (1986) is constructed. The partition function of the model exhibits cusps as a function of density. It is shown that the collective density fluctuations are massive.
Zhang, S. C.↗
Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices
We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.
Biegel, Bryan A.↗
Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices
We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.
Biegel, Bryan A.↗
Quantum Zeno Effect in the Measurement Problem
Critically analyzing the so-called quantum Zeno effect in the measurement problem, we show that observation of this effect does not necessarily mean experimental evidence for the naive notion of wave-function collapse by measurement (the simple projection rule). We also examine what kind of limitation the uncertainty relation and others impose on the observation of the quantum Zeno effect.
Namiki, Mikio↗
Analytic and numerical calculations of quantum synchrotron spectra from relativistic electron distributions
Calculations are performed numerically and analytically of synchrotron spectra for thermal and power-law electron distributions using the single-particle synchrotron power spectrum derived from quantum electrodynamics. It is found that the photon energy at which quantum effects appear is proportional to temperature and independent of field strength for thermal spectra; quantum effects introduce an exponential roll-off away from the classical spectra. For power law spectra, the photon energy at which quantum effects appear is inversely proportional to the magnetic field strength; quantum effects produce a steeper power law than is found classically. The results are compared with spectra derived from the classical power spectrum with an energy cutoff ensuring conservation of energy. It is found that an energy cutoff is generally an inadequate approximation of quantum effects for low photon energies and for thermal spectra, but gives reasonable results for high-energy emission from power-law electron distributions.
Brainerd, J. J.↗
Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model
We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation solver developed by Lucent Technologies. This implementation approach permits rapid development and enhancement of models, as well as run-time modifications and model switching. We show that even in typical bulk transport devices such as P-N diodes and BJTs, DG quantum effects can significantly modify the I-V characteristics. Quantum effects are shown to be even more significant in small, surface transport devices, such as sub-0.1 micron MOSFETs. In thin-oxide MOS capacitors, we find that quantum effects may reduce gate capacitance by 25% or more. The inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements. Significant quantum corrections also occur in the I-V characteristics of short-channel MOSFETs due to the gate capacitance correction.
Biegel, Bryan A.↗