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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Hybrid classical-quantum communication networks

Over the past several decades, the proliferation of global classical communication networks has transformed various facets of human society. Concurrently, quantum networking has emerged as a dynamic field of research, driven by its potential applications in distributed quantum computing, quantum sensor networks, and secure communications. This prompts a fundamental question: rather than constructing quantum networks from scratch, can we harness the widely available classical fiber-optic infrastructure to establish hybrid quantum–classical networks? This paper aims to provide a comprehensive review of ongoing research endeavors aimed at integrating quantum communication protocols, such as quantum key distribution, into existing lightwave networks. This approach offers the substantial advantage of reducing implementation costs by allowing classical and quantum communication protocols to share optical fibers, communication hardware, and other network control resources—arguably the most pragmatic solution in the near term. In the long run, classical communication will also reap the rewards of innovative quantum communication technologies, such as quantum memories and repeaters. Accordingly, our vision for the future of the Internet is that of heterogeneous communication networks thoughtfully designed for the seamless support of both classical and quantum communications.

Fiber-optic communication↗
DOE OSTI2025

Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics

Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (Ti⁢O 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μ⁢s (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:Ti⁢O 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.

Electro-optic effects↗
DOE OSTI2024

Isolation of individual Er quantum emitters in anatase TiO 2 on Si photonics

Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er 3+ ) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for quantum networks it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. Here, in this work, we demonstrate the optical isolation of single Er 3+ ions in CMOS-compatible titanium dioxide (TiO 2 ) thin films monolithically integrated on a silicon-on-insulator photonics platform. Our results demonstrate an initial step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er 3+ doped thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Spin-Photon Entanglement of a Single Er 3 + Ion in the Telecom Band

Entanglement between photons and a quantum memory is a key component of quantum repeaters, which allow long-distance quantum entanglement distribution in the presence of fiber losses. Spin-photon entanglement has been implemented with a number of different atomic and solid-state qubits with long spin coherence times, but none directly emit photons into the 1.5 − μ m telecom band where losses in optical fibers are minimized. Here, we demonstrate spin-photon entanglement using a single rare earth ion in the solid-state Er 3 + coupled to a silicon nanophotonic cavity, which directly emits photons at 1532.6 nm. We infer an entanglement fidelity of 73(3)% after propagating through 15.6 km of optical fiber. This work opens the door to large-scale quantum networks based Er 3 + ions, leveraging scalable silicon device fabrication and spectral multiplexing. Published by the American Physical Society 2025

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Constant Overhead Entanglement Distillation via Scrambling

High-fidelity quantum entanglement enables key quantum networking capabilities such as secure communication and distributed quantum computing, but long-distance entanglement distribution is limited by noise and loss. Entanglement distillation protocols address this problem by extracting high-fidelity Bell pairs from multiple noisy ones. The primary objective is minimizing the resource overhead: the number of noisy input pairs needed to distill each high-fidelity output pair. While protocols achieving optimal overhead are known in theory, they often require complex decoding operations that make practical implementation challenging. We circumvent this challenge by introducing protocols that use quantum scrambling—the spreading of quantum information under chaotic dynamics—through random Clifford operations. Based on this scrambling mechanism, our protocol maintains asymptotically constant overhead, independent of the desired output error rate $\bar{𝜖}$ , and can be implemented with shallow quantum circuits of depth 𝑂⁡(poly log log⁡ $\bar{𝜖}$ −1 ) and memory 𝑂⁡(poly log⁡ $\bar{𝜖}$ −1 ). Our protocol remains effective even with noisy quantum gates. By incorporating error correction, our protocol achieves state-of-the-art performance: starting with pairs of 10% initial infidelity, we require only seven noisy inputs per output pair to distill a single Bell pair with infidelity $\bar{𝜖}$ =10 −12 , substantially outperforming existing schemes. We demonstrate the utility of our protocols for quantum repeater networks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Automating Rabi & Ramsey Measurements via ML

As quantum computers scale up, the manual process of qubit tune-up becomes increasingly impractical due to its time-consuming and repetitive nature. While existing research has explored some automation techniques, many models remain underutilized for this purpose. This research aims to answer the question: can qubit tune-up be automated using the Long Short-Term Memory (LSTM) model? For the purposes of this project, only the rabi and ramsey measurement cycle was automated. These measurements are used to fine-tune a rough qubit frequency by repeating them until the optimal qubit frequency is obtained. The LSTM model uses the qubit frequency at one time step to forecast the qubit frequency at the next time step. A rabi-ramsey simulation was made to fabricate a dataset to train and test the LSTM model. As the model was trained, the error of the model decreased. Although there wasn t enough training data to generate perfect predictions, this shows it is possible to utilize forecasting models in automating the tune-up process.

Roberts, Rachel↗
DOE OSTI2024

Automating Rabi & Ramsey Measurements via Machine Learning

As quantum computers scale up, the manual process of qubit tune-up becomes increasingly impractical due to its time-consuming and repetitive nature. While existing research has explored some automation techniques, many models remain underutilized for this purpose. This research aims to answer the question: can qubit tune-up be automated using the Long Short-Term Memory (LSTM) model? For the purposes of this project, only the rabi and ramsey measurement cycle was automated. These measurements are used to fine-tune a rough qubit frequency by repeating them until the optimal qubit frequency is obtained. The LSTM model uses the qubit frequency at one time step to forecast the qubit frequency at the next time step. A rabi-ramsey simulation was made to fabricate a dataset to train and test the LSTM model. As the model was trained, the error of the model decreased. Although there wasn't enough training data to generate perfect predictions, this shows it is possible to utilize forecasting models in automating the tune-up process.

Roberts, Rachel↗
DOE OSTI2024

Automating Rabi & Ramsey Measurements via ML

As quantum computers scale up, the manual process of qubit tune-up becomes increasingly impractical due to its time-consuming and repetitive nature. While existing research has explored some automation techniques, many models remain underutilized for this purpose. This research aims to answer the question: is qubit tune-up able to be automated using the Long Short-Term Memory (LSTM) model? For the purposes of this project, only the rabi and ramsey measurement cycle was automated. These measurements are used to fine-tune a rough qubit frequency by repeating them until the optimal qubit frequency is obtained. The LSTM model uses the qubit frequency at one time step to forecast the qubit frequency at the next time step. A rabi-ramsey simulation was made to fabricate a dataset to train and test the LSTM model. As the model was trained, the error of the model decreased. Although there wasn't enough training data to generate perfect predictions, this shows it is possible to utilize forecasting models in automating the tune-up process.

Roberts, Rachel↗
DOE OSTI2026

Spin-transparent storage rings for quantum computing

Spin-transparent storage rings, where any spin direction repeats after one full turn, can be used in conjunction with ion traps as a new quantum computing platform [1]. Advantages of spin-transparent rings for quantum computing include: large numbers of stored qubits; long quantum coherence times of up to several hours; long storage lifetimes; and room temperature operation. These exceptional qualities mean rings could provide a scalable way to implement algorithms with deep complexity requiring many quantum operations while simultaneously providing a large number of qubits. This new platform where the qubit has long quantum coherence time can also be used as a quantum sensor or a part of a quantum memory.

Accelerator Physics↗
DOE OSTI2025

Interactions Enhance Ramp Reversal Memory in Locally Phase Separated Materials

The ramp-reversal memory (RRM) effect in metal–insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and non-volatile memory devices. Our previous defect motion model successfully explained RRM in vanadium dioxide (VO 2 ), capturing observed critical temperature shifts and memory accumulation throughout the sample. However, this approach lacked interactions between metallic and insulating domains. Here, we extend our model by combining a correlated Random Field Ising Model with defect diffusion-segregation, enabling accurate hysteresis modeling while predicting the relationship between RRM and domain interactions. Our simulations demonstrate that the maximum RRM occurs when the turnaround temperature approaches the inflection point. This peak in RRM vs. turnaround temperature is consistent with prior transport measurements, as well as our own optical measurements reported here. Significantly, we find that increasing nearest-neighbor interactions enhances the maximum memory effect, thus providing a clear mechanism for optimizing RRM performance. Since our model employs minimal assumptions, we predict that RRM should be a widespread phenomenon in materials exhibiting patterned phase coexistence of electronic domains. This work not only advances fundamental understanding of memory behavior in TMOs but also establishes a much-needed theoretical framework for optimizing device applications.

36 MATERIALS SCIENCE↗