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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Heavy ion induced soft and hard breakdown are investigated in thin gate oxides as a function of LET, fluence, and voltage applied during irradiation. It is found that post-irradiation oxide conduction is well described by the Sune quantum point contact model.
An attempt to reconcile quantum mechanics with Newton's laws represented by the non-Lipschitz formalism has been made. As a Proof-of-concept, a line of equally spaced atoms was studied. It appeared that enforcement of atom incompressibility required relaxation of the lipschitz condition at the points of contact.
Whether the statistics of primordial fluctuations for structure formation are Gaussian or otherwise may be determined if the Cosmic Background Explorer (COBE) Satellite makes a detection of the cosmic microwave-background temperature anisotropy delta T(sub CMB)/T(sub CMB). Non-Gaussian fluctuations may be generated in the chaotic inflationary model if two scalar fields interact nonlinearly with gravity. Theoretical contour maps are calculated for the resulting Sachs-Wolfe temperature fluctuations at large angular scales (greater than 3 degrees). In the long-wavelength approximation, one can confidently determine the nonlinear evolution of quantum noise with gravity during the inflationary epoch because: (1) different spatial points are no longer in causal contact; and (2) quantum gravity corrections are typically small-- it is sufficient to model the system using classical random fields. If the potential for two scalar fields V(phi sub 1, phi sub 2) possesses a sharp feature, then non-Gaussian fluctuations may arise. An explicit model is given where cold spots in delta T(sub CMB)/T(sub CMB) maps are suppressed as compared to the Gaussian case. The fluctuations are essentially scale-invariant.
A highly reflective spray-on coating and tile material has been under development at Kennedy Space Center (KSC) that scatters away most of the Sun’s energy, thereby allowing coated objects to remain cool in space. The best performing tile material has achieved 1% solar absorptivity while the best performing spray-on coating has achieved around 4%. Both versions passively maintain cryogenic temperatures below 120 K at 1 astronomical unit (AU) from the Sun, but the tile material consistently sustains temperatures below 90 K, which is low enough to preserve oxygen and methane in a liquid state. Besides keeping propellants cold, this “solar white” material has the potential to passively maintain high-temperature superconductors (HTS) in a superconducting state without the support of liquid nitrogen cooling. If superconductors can be operated without the added infrastructure of liquid nitrogen cooling, it may enable them to be used in space for applications like magnetic radiation shielding and efficient energy management. Long duration exposure to both galactic cosmic radiation and coronal mass ejections can pose health risks for the astronauts and increase the potential for damage to electronics. This makes shielding essential to accomplish long duration missions, particularly when astronauts are onboard. The objective of this project was to determine the extent we could keep a high-temperature superconducting (HTS) material passively chilled to maintain its superconducting state. Both the tile and spray-on versions of solar white were investigated. We focused on finding a version that could support passive cooling at 1 AU from the Sun and determined the closest operating distances for samples that were unable to perform at 1 AU. Early in the project, we selected bismuth strontium calcium copper oxide (BSCCO) as the HTS to test based on its reputable usage in superconducting wires. The version we selected was Bi-2223, which has a critical temperature of about 108 K. Sample bars with contacts for a four-point probe were obtained from Quantum Levitation: https://quantumlevitation.com/product/superconductor-bar-for-4-point-tc-experiment/.
Published document discusses devices which are based on weak-link Josephson elements that join superconductors. Links can take numerous forms, and circuitry utilizing links can perform many varied functions with unprecedented sensitivity. Theoretical review of Josephson's junctions include tunneling junctions, point contact devices, microbridges, and proximity-effect devices.
Experiments have shown carbon nanotubes (CNT) to be almost perfect conductors at small applied biases. The features of the CNT band structure, large velocity of the crossing subbands and the small number of modes that an electron close to the band center / Fermi energy can scatter into, are the reasons for the near perfect small bias conductance. We show that the CNT band structure does not help at large applied biases - electrons injected into the non crossing subbands can either be Bragg reflected or undergo Zener-type tunneling. This limits the current carrying capacity of CNT. We point out that the current carrying capacity of semiconductor quantum wires in the ballistic limit is different, owing to its band structure. The second aspect addressed is the relationship of nanotube chirality in determining the physics of metal-nanotube coupling. We show that a metallic-zigzag nanotube couples better than an armchair nanotube to a metal contact. This arises because in the case of armchair nanotubes, while the pi band couples well, the pi* band does not couple well to the metal. In the case of zigzag nanotube both crossing modes couple reasonably well to the metal. Many factors such as the role of curvature, strain and defects will play a role in determining the suitability of nanotubes as nanowires. From the limited view point of metal-nanotube coupling, we feel that metallic-zigzag nanotubes are preferable to armchair nanotubes.
Nanowire thermoelectric devices, now under development, are intended to take miniaturization a step beyond the prior state of the art to exploit the potential advantages afforded by shrinking some device features to approximately molecular dimensions (of the order of 10 nm). The development of nanowire-based thermoelectric devices could lead to novel power-generating, cooling, and sensing devices that operate at relatively low currents and high voltages. Recent work on the theory of thermoelectric devices has led to the expectation that the performance of such a device could be enhanced if the diameter of the wires could be reduced to a point where quantum confinement effects increase charge-carrier mobility (thereby increasing the Seebeck coefficient) and reduce thermal conductivity. In addition, even in the absence of these effects, the large aspect ratios (length of the order of tens of microns diameter of the order of tens of nanometers) of nanowires would be conducive to the maintenance of large temperature differences at small heat fluxes. The predicted net effect of reducing diameters to the order of tens of nanometers would be to increase its efficiency by a factor of .3. Nanowires made of thermoelectric materials and devices that comprise arrays of such nanowires can be fabricated by electrochemical growth of the thermoelectric materials in templates that contain suitably dimensioned pores (10 to 100 nm in diameter and 1 to 100 microns long). The nanowires can then be contacted in bundles to form devices that look similar to conventional thermoelectric devices, except that a production version may contain nearly a billion elements (wires) per square centimeter, instead of fewer than a hundred as in a conventional bulk thermoelectric device or fewer than 100,000 as in a microdevice. It is not yet possible to form contacts with individual nanowires. Therefore, in fabricating a nanowire thermoelectric device, one forms contacts on nanowires in bundles of the order of 10-microns wide. The fill factor for the cross-section of a typical bundle is about 1/2. Nanowires have been grown in alumina templates with pore diameters of 100 and 40 nm.
Josephson effect mixers have previously been observed to display 'excess' noise both in experiments with point contacts and in numerical simulations using the resistively shunted junction (RSJ) model. This excess noise causes the mixer noise temperature to be a factor of typically 20-100 times the physical temperature of the device. Previously, this excess was ascribed to conversion from unwanted sidebands of the local oscillator and Josephson frequencies and their harmonics. Our numerical modeling of the RSJ equations has led to a new understanding of the excess noise, which is simply due to the intrinsic Josephson oscillations of the device. In addition, we have extended the modeling to include the previously ignored case of finite device capacitance (i.e. RSJ capacitance parameter beta(sub c) does not equal 0, which is more realistic for lithographically defined Josephson such as shunted tunnel junctions or SNS bridges. For some cases, this yields an improvement of a factor of two in noise temperature from the zero capacitance models. We will discuss the device parameters which optimize the mixer performance for frequencies approaching the characteristic frequency of the device, which is given by the Josephson frequency at the I(sub c)R(sub n) voltage (nu = 2eI(sub c)R(sub n)/h). These modeling results predict good conversion efficiency and a noise temperature within a factor of a few of the physical temperature. Experiments are in progress to determine the accuracy of this modeling using a waveguide mixer at 100 GHz with optimized, resistively shunted Nb tunnel junctions. If the modeling results are valid, they are particularly encouraging for mixers in the submillimeter regime, given the possibility of obtaining non-hysteretic Josephson devices with I(sub c)R(sub n) products in excess of a millivolt, using for instance, high-T(sub c) SNS bridges. We discuss the modifications to the classical RSJ model which are necessary in the quantum regime (h nu greater than kT), and conclude the Josephson mixers may attain noise temperatures less than ten times the quantum limit at high frequencies.