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Results for “radio-frequency & microwave plasma measurements”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Turbulence-Driven Edge-Localized-Mode-Free High-Confinement Mode with Divertor Detachment in a Metal-Wall Tokamak

We report the first demonstration of a minute-scale, edge-localized-mode-free high-confinement plasma regime compatible with divertor partial detachment and enhanced pedestal performance in a metal-wall tokamak, the Experimental Advanced Superconducting Tokamak. This regime is enabled by a newly identified mechanism: during divertor partial detachment, reduced ionization and enhanced pumping in a closed divertor lead to less cooling of the pedestal by recycling neutrals and seeding impurities, resulting in an increased pedestal temperature gradient, which excites high-frequency broadband turbulence. Gyrokinetic simulations identify the high-frequency broadband turbulence as a temperature-gradient-driven trapped electron mode (𝜂 𝑒 -TEM), which drives outward transport of particles and heat, thereby maintaining the edge-localized-mode-free state. This pedestal regime is particularly promising for the International Thermonuclear Experimental Reactor, where the anticipated lower density gradient, reduced E×B shear, and lower collisionality in the pedestal will further facilitate 𝜂 𝑒 -TEM excitation. The achieved integrated scenario with a detached divertor and turbulence-dominated pedestal thus offers a compelling solution for managing heat loads and metal impurity sources for long-pulse high-performance operation in future fusion reactors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1997

Electron-Temperature Dependence of the Recombination of NH4(+)((NH3)(sub n) Ions with Electrons

The two-body recombination of NH4(+)(NH3)(sub 2,3) cluster-ions with electrons has been studied in an afterglow experiment in which the electron temperature T, was elevated by radio-frequency heating from 300 K up to 900 K. The recombination coefficients for the n = 2 and n = 3 cluster ions were found to be equal, alpha(sub 2, sup(2)) = alpha(sub 3, sup(2)) = (4.8 +/- 0.5) x 10(exp - 6)cu cm/s, and to vary with electron temperature as T(sub c, sup -0.65) rather than to be nearly temperature-independent as had been inferred from measurements in microwave-heated plasmas.

Skrzypkowski, M. P.↗
NASA NTRS1999

Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species concentration, temperature, ion energy distribution, and electron number density. A wide variety of diagnostic techniques are under development through this consortium grant to measure these parameters. including molecular beam mass spectrometry (MBMS). Fourier transform infrared (FTIR) spectroscopy, broadband ultraviolet (UV) absorption spectroscopy, a compensated Langmuir probe. Additional diagnostics. Such as microwave interferometry and microwave absorption for measurements of plasma density and radical concentrations are also planned.

Cappelli, Mark A.↗