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Results for “recombination layers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

Garlick, G. F. J.↗
NASA NTRS1989

Observations of a shock and a recombination layer at the contact surface of Comet Halley

Results are presented on observations in the vicinity of the contact surface of the Comet Halley, obtained by the Giotto ion mass spectrometer, with emphasis placed on two specific events observed in this region on the inbound pass. One was a burst of energized ions (about 20 eV) of 2-sec duration observed two seconds before the contact surface was encountered, which coincided with a pulse in magnetic field strength interpreted by Neubauer (1988) as a fast-mode shock traveling away from the contact surface. The second was a sharp spike in ion densities observed at the contact surface by the mass analyzer, centered approximately at the inner edge of the contact surface. This ion-density spike is interpreted as a boundary layer into which the radial ionospheric flow enters and piles up; the density increase is limited by recombination.

Goldstein, B. E.↗
NASA NTRS1975

Solar cells for terrestrial applications

The power efficiency curves of photovoltaic solar cells were investigated as a function of the forbidden energy gap (E sub g) and the current-voltage characteristic of the diode. Minority carrier injection, depletion layer recombination, and interface recombination terms were considered in models for the I-V characteristic. The collection efficiency for photons with energy between (E sub g) and an upper energy cutoff (E sub w) was assumed to be 100% and zero otherwise. Results are presented in terms of a single parameter related to the ratio of depletion layer width and minority carrier diffusion length. It was found that increasing depletion layer recombination shifts the efficiency curves to larger values of the energy without changing the shape of the efficiency curve appreciably. It is believed that similar results would be obtained whenever the quality factors in the exponential energy gap and forward bias terms are equal.

Chernow, F.↗
NASA NTRS1993

Asymptotic analysis for the burning of n-heptane droplets using a four-step reduced mechanism

A four-step reduced mechanism is obtained from a minimal chemical-kinetic description, where the effects of the elementary rates are treated as parameters in the expressions for the global rates. This mechanism is used to analyze the extinction characteristics of a single n-heptane droplet burning under quasi-steady, spherically symmetrical conditions. The reaction layer consists of a merged inner zone, on the fuel-rich side of the flame, where fuel and H atoms are consumed thereby producing H2 and CO along with H2O and CO2, and an oxygen-consumption zone, on the fuel-lean side, where H2 and CO are oxidized to produce additional H2O and CO2 along with H radicals. For the inner zone, a parameter mu is identified which describes the ratio of the thickness of a fuel-consumption layer to that of an H-recombination layer. Analytical solutions for the rate of scalar dissipation at extinction are obtained in the limiting cases of mu tending to 0 and mu tending to infinity. From the results of the analysis, extinction diameters for n-heptane droplets are estimated for different pressures and ambient oxygen concentrations.

Card, J. M.↗
NASA NTRS1972

On the wide-range bias dependence of transistor d.c. and small-signal current gain factors.

Critical reappraisal of the bias dependence of the dc and small-signal ac current gain factors of planar bipolar transistors over a wide range of currents. This is based on a straightforward consideration of the three basic components of the dc base current arising due to emitter-to-base injected minority carrier transport, base-to-emitter carrier injection, and emitter-base surface depletion layer recombination effects. Experimental results on representative n-p-n and p-n-p silicon devices are given which support most of the analytical findings.

Schmidt, P.↗
NASA NTRS1982

Thickness dependences of solar cell performance

The significance of including factors such as the base resistivity loss for solar cells thicker than 100 microns and emitter and BSF layer recombination for thin cells in predicting the fill factor and efficiency of solar cells is demonstrated analytically. A model for a solar cell is devised with the inclusion of the dopant impurity concentration profile, variation of the electron and hole mobility with dopant concentration, the concentration and thermal capture and emission rates of the recombination center, device temperature, the AM1 spectra and the Si absorption coefficient. Device equations were solved by means of the transmission line technique. The analytical results were compared with those of low-level theory for cell performance. Significant differences in predictions of the fill factor resulted, and inaccuracies in the low-level approximations are discussed.

Sah, C. T.↗
NASA NTRS1987

Radiation damage of gallium arsenide production cells

High-efficiency gallium arsenide cells, made by the liquid epitaxy method (LPE), have been irradiated with 1-MeV electrons up to fluences of 10 to the 16th e/sq cm. Measurements have been made of cell spectral response and dark and light-excited current-voltage characteristics and analyzed using computer-based models to determine underlying parameters such as damage coefficients. It is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to other reported in the literature for the emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found for proton-irradiated liquid-phase epitaxy-grown cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.

Mardesich, N.↗
NASA NTRS1983

Effects of nonequilibrium and surface catalysis on Shuttle heat transfer - A review

It is pointed out that the Space Shuttle Orbiter is a hypersonic glide reentry vehicle which spends much of its entry time at relatively tenuous altitudes in which chemical nonequilibrium predominates in the shock layer. On the windward side, dissociation nonequilibrium exists in the inviscid layer and recombination nonequilibrium exists in the boundary layer. The present investigation is concerned with an evaluation of various flowfield predictions, taking into account a comparison of equilibrium and nonequilibrium flowfields coupled with reacting axisymmetric analog boundary-layer solutions and the results of viscous-shock-layer solutions with flight temperature/heat-flux measurements near the windward centerline for the Shuttle flights STS-2, STS-3, and STS-5.

Scott, C. D.↗
NASA NTRS2020

Development of High-Performance Graphene-HgCdTe Detector Technology for Mid-Wave Infrared Applications

A high-performance graphene-based HgCdTe detector technology is being developed for sensing over the mid-wave infrared (MWIR) band for NASA Earth Science, defense, and commercial applications. This technology involves the integration of graphene into HgCdTe photodetectors that combines the best of both materials and allows for higher MWIR(2-5 m) detection performance compared to photodetectors using only HgCdTe material. The interfacial barrier between the HgCdTe-based absorber and the graphene layer reduces recombination of photogenerated carriers in the detector. The graphene layer also acts as high mobility channel that whisks away carriers before they recombine, further enhancing the detector performance. Likewise, HgCdTe has shown promise for the development of MWIR detectors with improvements in carrier mobility and lifetime. The room temperature operational capability of HgCdTe-based detectors and arrays can help minimize size, weight, power and cost for MWIR sensing applications such as remote sensing and earth observation, e.g., in smaller satellite platforms. The objective of this work is to demonstrate graphene-based HgCdTe room temperature MWIR detectors and arrays through modeling, material development, and device optimization. The primary driver for this technology development is the enablement of a scalable, low cost, low power, and small footprint infrared technology component that offers high performance, while opening doors for new earth observation measurement capabilities.

Sood, Ashok K.↗
NASA NTRS1979

Outdiffusion of recombination centers from the substrate into LPE layers - GaAs

Experimental results are presented showing that outdiffusion of recombination centers from the GaAs substrate into the epitaxial layer takes place during growth. Such outdiffusion decreases the carrier lifetime in the epitaxial layer to much lower values than the radiative recombination limit. Furthermore, it introduces a lifetime gradient across the epitaxial layer which depends critically on the growth velocity and thermal treatment. High rates of growth (such as those attainable in electroepitaxy) and high cooling rates can minimize the adverse effects of normally available substrates on the epitaxial layers; however, good quality substrates are essential for the consistent growth of device quality layers.

Jastrzebski, L.↗