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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Boosting the External Quantum Efficiency of AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes by Electrode Geometry Variation

Fast aluminum-gallium-nitride–based metal–semiconductor–metal ultraviolet photodiodes were successfully designed, fabricated, and characterized using conventional photolithography techniques. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the device performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Furthermore, based on the independently measured Hall mobility and electric field, we evaluated the carrier transit time of the devices as 1.31 ps with bias-voltage–independent external quantum efficiency of 1198% in photoconductive mode at 19.5 V and 70% at 60 V for n -doped and intrinsic devices, respectively.

42 ENGINEERING↗

Interdigitated electrode geometry variation and external quantum efficiency of GaN/AlGaN-based metal-semiconductor-metal UV photodetectors

Aluminum gallium-nitride (Al x Ga 1–x N)-based metal–semiconductor–metal (MSM) ultraviolet photodetectors photodetectors (PD’s) have been successfully designed and fabricated using conventional photolithography techniques and tested experimentally to study their spectral sensitivity across different Al content, x, with x varying from 0 to 0.3. (Al)GaN-based UV PD’s have wide and tunable direct band gaps. The ability to easily select the photodetected wavelength by simply varying the aluminum content of GaN thin film (Al x Ga 1–x N) is a significant advantage of these group III–V compounds. Typically, MSM PD’s grown on (Al)GaN thin films result in ultrafast photodetection because of their highly mobile carriers. These devices are limited by the carrier transit time due to the negligible capacitance presented by the interdigitated fingers. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the devices’ performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Here, coupled with the independently measured Hall mobility and electric field, we computed the carrier transit time of the devices to be as short as 1.31 ps and the bias-voltage–independent external quantum efficiencies were as high as 70% at 60 V for n-doped and intrinsic devices when operated in the reverse bias regime. Here, (Al x )Ga 1–x N photodetectors were designed to explore spectral sensitivity by altering x from 0 to 0.3.

42 ENGINEERING↗

Metal-semiconductor-metal structured p-i-n GaN/AlGaN ultrafast detectors for deep-UV photodetection

We report the productive outcome of the design, fabrication, and testing of a new class of GaN/AlGaN-based ultrafast, sensitive photodiodes for deep-UV solar blind photodetection. Pt was employed as the interdigitated metal electrode to establish that while a Schottky contact was formed at the metal/semiconductor heterojunction, it was the quantum wells in the p-i-n vertical structure that produced the diode characteristics of the detectors. The metal–semiconductor–metal design retained its ultrafast property as expected in the p-i-n structure because the spacing between the interdigitated fingers was asymmetrically implemented to optimize the photogenerated carriers’ transit time from the quantum well to the external circuitry. Also, the vertical p-i-n structure provided its renowned efficient photocarrier generation, which was significantly enhanced by the delta quantum well architecture of the vertical epitaxial structure. The active area of the device was 300 μm × 300 μm with 5-μm finger width, and asymmetric electrode spacing of 2 μm, 3 μm, and 5 μm. Here, the best device had peak responsivity of 3.5 A/W under 262-nm illumination with full width half maximum of 337.2-ps and 37.5-ps rise times when biased with 20 V.

efficient↗

Shape‐Dependent Multi‐Weight Magnetic Artificial Synapses for Neuromorphic Computing

Abstract In neuromorphic computing, artificial synapses provide a multi‐weight (MW) conductance state that is set based on inputs from neurons, analogous to the brain. Herein, artificial synapses based on magnetic materials that use a magnetic tunnel junction (MTJ) and a magnetic domain wall (DW) are explored. By fabricating lithographic notches in a DW track underneath a single MTJ, 3–5 stable resistance states that can be repeatably controlled electrically using spin‐orbit torque are achieved. The effect of geometry on the synapse behavior is explored, showing that a trapezoidal device has asymmetric weight updates with high controllability, while a rectangular device has higher stochasticity, but with stable resistance levels. The device data is input into neuromorphic computing simulators to show the usefulness of application‐specific synaptic functions. Implementing an artificial neural network (NN) applied to streamed Fashion‐MNIST data, the trapezoidal magnetic synapse can be used as a metaplastic function for efficient online learning. Implementing a convolutional NN for CIFAR‐100 image recognition, the rectangular magnetic synapse achieves near‐ideal inference accuracy, due to the stability of its resistance levels. This work shows MW magnetic synapses are a feasible technology for neuromorphic computing and provides design guidelines for emerging artificial synapse technologies.

Leonard, Thomas↗

Observation of maxon-like ultrasound in elastic metabeam

We observe maxon-like dispersion of ultrasonic guided waves in elastic metamaterials consisting of a rectangular beam and an array of cylindrical resonators. The pillars act as asymmetric resonators that induce a strong modal hybridization. We experimentally observe the strongly localized maxon mode with zero group velocity. Our study also demonstrates a unique feature of the maxon with a down-shifting peak frequency in space. To reveal the fundamental mechanism, we conduct comprehensive numerical studies on all frieze group symmetries and key geometric parameters.

Materials Science↗

Renormalization of asymmetric staple-shaped Wilson-line operators in lattice and continuum perturbation theory

In this work, we study the renormalization of nonlocal quark bilinear operators containing an asymmetric staple-shaped Wilson line at the one-loop level in both lattice and continuum perturbation theory. These operators enter the first-principle calculation of transverse momentum-dependent parton distribution functions (TMDPDFs) in lattice QCD using the formulation of large momentum effective theory. We provide appropriate RI ′ -type conditions that address the power and logarithmic divergences, as well as the mixing among staple operators of different Dirac structures, using a number of different possible projectors. A variant of RI ′ , including calculations of rectangular Wilson loops, which cancel the pinch-pole singularities of the staple operators at infinite length and reduce residual power divergences, is also employed. We calculate at one-loop order the conversion matrix, which relates the quasi-TMDPDFs in the RI ′ -type schemes to the reference scheme MS ¯ for arbitrary values of the renormalization momentum scale and of the dimensions of the staple. Published by the American Physical Society 2024

Astronomy & Astrophysics↗

Experimental and Numerical Analysis of Additively Manufactured Inconel 718 Coupons With Lattice Structure

Abstract In the present paper, two lattice geometries suitable for near surface and double wall cooling were developed and tested. The first type of unit cell consisted of six ligaments of 0.5 mm diameter joined at a common vertex near the middle. The second type of unit cell was derived from the first type by adding four mutually perpendicular ligaments in the middle plane. Two lattice configurations, referred to as L1 and L2, respectively, were obtained by repeating the corresponding unit cell in streamwise and spanwise directions in an inline fashion. Test coupons consisting of these lattice geometries embedded inside rectangular cooling channel with dimensions of 2.54 mm height, 38.07 mm width, and 38.1 mm in length were fabricated using Inconel 718 powder and selective laser sintering (SLS) process. The heat transfer and pressure drop performance was then evaluated using steady-state tests with constant wall temperature boundary condition and for channel Reynolds number ranging from 2800 to 15,000. The lattices depicted a higher heat transfer compared with a smooth channel and both the heat transfer and pressure drop increased with a decrease in the porosity from L1 to L2. Steady-state conjugate numerical results revealed formation of prominent vortical structures in the inter-unit cell spaces, which diverted the flow toward the top end wall and created an asymmetric heat transfer between the two end walls. In conclusion, these lattice structures provided an augmented heat transfer while favorably redistributing the coolant within channel.

Engineering↗