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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Reverse current in solar flares

We examine the proposal that impulsive X-ray bursts are produced by high-energy electrons streaming from the corona to the chromosphere. It is known that the currents associated with these streams are so high that either the streams do not exist or their current is neutralized by a reverse current. Analysis of a simple model in which the reverse current is stable indicates that the primary electron stream leads to the development of an electric field in the ambient corona which (a) decelerates the primary beam and (b) produces a neutralizing reverse current. It appears that, in some circumstances, this electric field could prevent the primary beam from reaching the chromosphere. In any case, the electric field acts as an energy exchange mechanism, extracting kinetic energy from the primary beam and using it to heat the ambient plasma. This heating is typically so rapid that it must be expected to have important dynamical consequences.

Knight, J. W.↗
NASA NTRS1978

Reverse Current in Solar Flares

An idealized steady state model of a stream of energetic electrons neutralized by a reverse current in the pre-flare solar plasma was developed. These calculations indicate that, in some cases, a significant fraction of the beam energy may be dissipated by the reverse current. Joule heating by the reverse current is a more effective mechanism for heating the plasma than collisional losses from the energetic electrons because the Ohmic losses are caused by thermal electrons in the reverse current which have much shorter mean free paths than the energetic electrons. The heating due to reverse currents is calculated for two injected energetic electron fluxes. For the smaller injected flux, the temperature of the coronal plasma is raised by about a factor of two. The larger flux causes the reverse current drift velocity to exceed the critical velocity for the onset of ion cyclotron turbulence, producing anomalous resistivity and an order of magnitude increase in the temperature. The heating is so rapid that the lack of ionization equilibrium may produce a soft X-ray and EUV pulse from the corona.

Knight, J. W., III↗
NASA NTRS1976

Reverse Current in Solar Flares

The theory that impulsive X ray bursts are produced by high energy electrons streaming from the corona to the chromosphere is investigated. Currents associated with these streams are so high that either the streams do not exist or their current is neutralized by a reverse current. Analysis of a simple model indicates that the primary electron stream leads to the development of an electric field in the ambient corona which decelerates the primary beam and produces a neutralizing reverse current. It appears that, in some circumstances, this electric field could prevent the primary beam from reaching the chromosphere. In any case, the electric field acts as an energy exchange mechanism, extracting kinetic energy from the primary beam and using it to heat the ambient plasma. This heating is typically so rapid that it must be expected to have important dynamical consequences.

Knight, J. W.↗
NASA NTRS1992

Use of cyclic current reversal polarization voltammetry for investigating the relationship between corrosion resistance and heat-treatment induced variations in microstructures of 400 C martensitic stainless steels

Software for running a cyclic current reversal polarization voltammagram has been developed for use with a EG&G Princeton Applied Research Model 273 potentiostat/galvanostat system. The program, which controls the magnitude, direction and duration of an impressed galvanostatic current, will produce data in ASCII spreadsheets (Lotus, Quattro) for graphical representation of CCRPV voltammograms. The program was used to determine differences in corrosion resistance of 440 C martenstic stainless steel produced as a result of changes in microstructure effected by tempering. It was determined that tempering at all temperatures above 400 F resulted in increased polarizability of the material, with the increased likelihood that pitting would be initiated upon exposure to marine environments. These results will be used in development of remedial procedures for lowering the susceptibility of these alloys toward the stress corrosion cracking experienced in bearings used in high pressure oxygen turbopumps used in the main engines of space shuttle orbiters.

Ambrose, John R.↗
NASA NTRS1981

On the importance of reverse current ohmic losses in electron-heated solar flare atmospheres

The paper considers the passage of a beam of nonthermal electrons through the flaring solar atmosphere, paying particular attention to the requirement that the beam be stable to the generation of plasma turbulence. The ratio of energy losses due to reverse current ohmic heating and heating by Coulomb collisions, respectively, for the greatest flux which can pass stably through the atmosphere is computed. It is shown that this ratio is determined by the low energy cutoff of the beam, by the electron temperature of the ambient atmosphere, and by the electron to ion temperature ratio theta. It is also independent of the atmospheric density. The results show that ohmic energy losses are undoubtedly important in the initial transient state, in agreement with other authors, but that their role is debatable in the flare atmosphere, depending on the value of theta appropriate.

Emslie, A. G.↗
NASA NTRS1980

On the importance of reverse current ohmic losses in electron-heated solar flare atmospheres

The passage of a beam of nonthermal electrons through the flaring solar atmosphere is considered, paying particular attention to the requirement that the beam be stable to the generation of plasma turbulence. The ratio is computed of energy losses due to reverse current ohmic heating, and heating by Coulomb collisions, respectively, for the greatest flux which can pass stably through the atmosphere. It is demonstrated that this ratio is determined by the low energy cutoff of the beam, by the electron temperature of the ambient atmosphere, and by the electron to ion temperature ratio. It is also independent of the atmospheric density.

Emslie, A. G.↗
NASA NTRS1983

Periodic reverse current pulsing to form uniformly sized feed through conductors

A large number of electrically conductive solid, dense feed-through paths for the high-speed low-loss transfer of electrical signals between integrated circuits of a single silicon-on-sapphire body, or between integrated circuits of several silicon-on-sapphire bodies, are provided by an electroforming method utilizing periodic reverse-current pulsing.

Anthony, Thomas R.↗
NASA NTRS1985

The structure of high-temperature solar flare plasma in non-thermal flare models

Analytic differential emission measure distributions have been derived for coronal plasma in flare loops heated both by collisions of high-energy suprathermal electrons with background plasma, and by ohmic heating by the beam-normalizing return current. For low densities, reverse current heating predominates, while for higher densities collisional heating predominates. There is thus a minimum peak temperature in an electron-heated loop. In contrast to previous approximate analyses, it is found that a stable reverse current can dominate the heating rate in a flare loop, especially in the low corona. Two 'scaling laws' are found which relate the peak temperature in the loop to the suprathermal electron flux. These laws are testable observationally and constitute a new diagnostic procedure for examining modes of energy transport in flaring loops.

Emslie, A. G.↗
NASA NTRS1979

Hydrogen recombination in sealed nickel-cadmium aerospace cells

The paper presents a mechanism which offers an explanation of the observed behavior of nickel-cadmium cells during voltage reversal. Constant current reversals using aerospace Ni-Cd cells showed that at rates of C/100 and temperatures of 20 C, a steady condition of constant pressure is achieved with continuous overdischarge. Results of a test employing a battery pack of thirteen 24 Ah cells at 10 C showed that: (1) no net evolution of H occurs in Ni-Cd cells during overdischarge, (2) as H pressure increases the rate of pressure rise decreases, and (3) after attaining pressure equilibrium at a given overdischarge rate, a pressure decrease is noted when the discharge is lowered. Other tests using varying overdischarge rates were examined and have resulted in the development of a laboratory cell with a safe overdischarge capability of C/20 which is three times as great as state-of-the-art Ni-Cd cells.

Ritterman, P. F.↗
NASA NTRS2004

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Lebron-Velilla, Ramon C.↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
NASA NTRS2003

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

THz frequencies↗