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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Degradation Dynamics of Perovskite Solar Cells Under Fixed Reverse-Current Injection

Previous studies of reverse-bias stability in perovskite solar cells have focused primarily on voltage-controlled tests. Here we instead investigate perovskite solar cell degradation under well-defined, constant reverse-current stress. We show that the choice of hole-transport layer dictates the dominant degradation pathway: cells using thick poly(triphenylamine) (PTAA) layers can tolerate high reverse bias but quickly undergo catastrophic breakdown under fixed reverse current near their one-sun maximum power-point. In contrast, cells modified with phosphonic-acid interface layer MeO-2PACz, with poorer indium-doped tin oxide (ITO) coverage compared to PTAA, exhibit gradual and recoverable degradation under certain stress and recovery conditions. For MeO-2PACz devices, degradation increases with both current magnitude and duration. Importantly, when normalized by injected charge (current times duration), lower currents applied over longer times cause more degradation than higher currents over shorter periods. Here, combining electrical measurements with spatially resolved photoluminescence imaging, our observations support an ion- and charge-mediated interfacial electrochemical degradation mode.

Degradation↗
DOE OSTI2026

Degradation Dynamics of Perovskite Solar Cells Under Fixed Reverse Current Injection

Previous studies of reverse-bias stability in perovskite solar cells have focused primarily on voltage controlled reverse-bias tests. Here we instead present an investigation of perovskite solar cell degradation under well-defined, constant reverse-current stress. We show that the choice of hole-transport layer dictates the dominant degradation pathway: cells using thick poly(triphenylamine) (PTAA) layers with better indium-doped tin oxide (ITO) coverage can tolerate high reverse bias but quickly undergo catastrophic breakdown under fixed reverse current near their one-sun maximum power-point. In contrast, cells modified with the phosphonic-acid interface layer MeO-2PACz, with poorer ITO coverage compared to PTAA, exhibit soft, gradual, and largely recoverable degradation, regardless of the shading conditions. For MeO-2PACz devices, degradation increases with both current magnitude and duration. Importantly, when normalized by injected charge (current times duration), lower currents applied over longer times cause more severe degradation than higher currents over shorter periods. Combining electrical measurements with spatially resolved photoluminescence imaging, we argue against shunt formation and instead support an ion- and charge-mediated interfacial electrochemical degradation mode.

Applied Physics (physics.app-ph)↗
DOE OSTI2022

Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

Deep level defects in wide bandgap semiconductors, whose response times are in the range of power converter switching times, can have a significant effect on converter efficiency. We use Deep Level Transient Spectroscopy (DLTS) to evaluate such defect levels in the n- drift layer of vertical GaN (v-GaN) power diodes with VBD ~ 1500 V. DLTS reveals three energy levels that are at ~0.6 eV (highest density), ~0.27 eV (lowest density) and ~ 45 meV (a dopant level) from the conduction band. Dopant extraction from Capacitance-Voltage measurement test (C-V) at multiple temperatures enables trap density evaluation, and the ~0.6 eV trap has a density of 1.2 × 10 15 cm -3 . Here, the 0.6 eV energy level and its density are similar to a defect that is known to cause current collapse in GaN based surface conducting devices (like HEMTs). Analysis of reverse bias currents over temperature in the v-GaN diodes indicates a predominant role of the same defect in determining reverse leakage current at high temperatures, reducing switching efficiency.

42 ENGINEERING↗
DOE OSTI2020

The Effects of Absorber Thickness on Reverse-Bias Damage in Cu(In,Ga)Se2 Solar Cells

We studied a variety of absorber thicknesses in Cu(In,Ga)Se 2 devices to examine the ability of the cell to withstand reverse current flow without damage. Absorbers were varied from 2.5 um to 0.4 um, with the expectation that larger reverse current would be allowed to flow at lower voltages as absorbers were made thinner. Our initial experiments showed promise. However, as the efficiency of thin devices was improved, the reverse current allowed at a given voltage decreased. Here we present our negative results on the ability of thin devices to allow higher reverse currents at lower voltages. We also give details on our procedures for reverse-bias testing small-area solar cells. We hope this information will be useful for those who want to study reverse-bias at the cell level.

14 SOLAR ENERGY↗
DOE OSTI2021

Large area vertical Ga 2 O 3 Schottky diodes for X-ray detection

In this work, the Schottky barrier diodes were fabricated from a bulk Sn-doped (001) n-type Ga 2 O 3 substrate with a Si-doped epitaxial layer grown by hydride vapor phase epitaxy (HVPE), which demonstrate a good response to X-rays. Circular metal contacts with diameters ranging from 50 to 1500 um and square metal contacts ranging from 100 X 100 to 1600 X 1600 um 2 were deposited on the wafer. The devices were characterized for their electrical performance including forward current–voltage (FIV), reverse current–voltage (RIV), and capacitance-voltage (CV) measurements. The best device showed a breakdown voltage of –804 V and the devices tested had an average ideality of 1.12. The devices exhibited a clear response to X-rays even at zero bias with an experimentally observed response time 1.03 s and a linear response of detector signal to the X-ray dose rate. The experimentally observed device response time improved to 0.25 s when bias voltage is applied. The device also survived a long-term stability test of over 2 h under a constant X-ray irradiation. The sensitivity and the lower limit of detection for X-ray by Ga2O3 epitaxial Schottky detectors were discussed and determined as 43.5 C/mGy cm –2 at –200 V and 8.31 nGy Air /s, respectively.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Probing Electrode Transformation under Dynamic Operation for Alkaline Water Electrolysis

Alkaline water electrolyzers (AWEs) play a pivotal role in the realm of large-scale hydrogen production. However, AWEs face significant challenges in electrode degradation particularly under dynamic operating conditions, induced by reverse current phenomenon during frequent startup/shutdown. Herein, this study aims to rationalize the degradation mechanisms of AWEs under these conditions. A three-electrode membrane electrode assembly (MEA) setup is first utilized to decouple polarization behaviors of anode and cathode in AWEs. Following a proposed accelerated stress testing protocol, the setup allows for tracking individual electrode performance transformations during frequent reverse current operation. Integrating operando cell studies with in situ and post-mortem characterizations, it is showed that continuous formation of highly active species, nickel (oxy)hydroxides, improves the anode performance for oxygen evolution reaction. On the contrary, irreversible oxidation of nickel to β-nickel hydroxide results in a severe degradation of cathode, leading to material dissolution, poor electrical conductivity and loss of catalytic activity for hydrogen evolution reaction. These results provide insights in nickel-based electrode transformation mechanisms for alkaline water electrolysis and indicate that cathode with higher redox reversibility can potentially improve durability of AWEs under dynamic conditions.

08 HYDROGEN↗
DOE OSTI2020

Current-Induced Reversal of Anomalous Hall Conductance in Twisted Bilayer Graphene

It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the fourfold degenerate conduction flat bands. The experiment implies a switching of the valley polarization (VP) and topology in TBG. In this work, we present a theory on the current-induced switching of VP and topology. The presence of current in the bulk causes the redistribution of electron occupation in bands near the Fermi energy, which then deforms and shifts the band dispersion due to the Coulomb interaction. Above a critical current, the original occupied and empty bands can be swapped, resulting in the switching of VP and topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

New examples of ferroelectric nematic materials showing evidence for the antiferroelectric smectic-Z phase

Abstract We present a new ferroelectric nematic material, 4-((4′-((trans)-5-ethyloxan-2-yl)-2′,3,5,6′-tetrafluoro-[1,1′-biphenyl]-4-yl)difluoromethoxy)-2,6-difluorobenzonitrile (AUUQU-2-N) and its higher homologues, the molecular structures of which include fluorinated building blocks, an oxane ring, and a terminal cyano group, all contributing to a large molecular dipole moment of about 12.5 D. We observed that AUUQU-2-N has three distinct liquid crystal phases, two of which were found to be polar phases with a spontaneous electric polarization P s of up to 6 µC cm –2 . The highest temperature phase is a common enantiotropic nematic (N) exhibiting only field-induced polarization. The lowest-temperature, monotropic phase proved to be a new example of the ferroelectric nematic phase (N F ), evidenced by a single-peak polarization reversal current response, a giant imaginary dielectric permittivity on the order of 10 3 , and the absence of any smectic layer X-ray diffraction peaks. The ordinary nematic phase N and the ferroelectric nematic phase N F are separated by an antiferroelectric liquid crystal phase which has low permittivity and a polarization reversal current exhibiting a characteristic double-peak response. In the polarizing light microscope, this antiferroelectric phase shows characteristic zig-zag defects, evidence of a layered structure. These observations suggest that this is another example of the recently discovered smectic Z A (SmZ A ) phase, having smectic layers with the molecular director parallel to the layer planes. The diffraction peaks from the smectic layering have not been observed to date but detailed 2D X-ray studies indicate the presence of additional short-range structures including smectic C-type correlations in all three phases—N, SmZ A and N F —which may shed new light on the understanding of polar and antipolar order in these phases.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Simulated Impact of Shortened Strings in Commercial and Utility-Scale Photovoltaic Arrays

The deliberate removal of photovoltaic modules from a string can occur for various reasons encompassing maintenance, measurements, theft, or failure, reducing that string length relative to others when replacement modules are not available and there are not any viable alternative makes and models that could be inserted. This phenomenon, delineated in our prior experimentally validated research, manifests two significant effects: (1) a shift in the ideal maximum power point and (2) the induction of potentially substantial reverse currents in the shortened strings at open-circuit voltage, VOC. However, the scalability and asymptotic limits of these observed behaviors concerning array size remained undetermined. In this study, we elucidate the operational dynamics of such arrays by manipulating two mismatch-contributing variables in simulated arrays of up to 900 strings: the number of removed modules per string (indicative of the level of mismatch, ranging up to 5) and the quantity of shortened strings (1 to 60). Simulation outcomes underscore that mismatch severity impacts array operation more than the proportion of shortened strings. This research delves into the practical ramifications of operating with shortened strings, including implications for low-irradiance operation and the manifestation of deleterious reverse currents (>35 A in specific cases), emphasizing the need for careful array configuration for optimal performance and safety in these implementations.

Energy & Fuels↗
DOE OSTI2022

Methods and algorithms of cyclic coulometry

Systems, devices, and methods of diagnosing an electrochemical cell using cyclic coulometry are discussed. An exemplary battery diagnostic system comprises a current generator to generate symmetric charge current and discharge current to excite an electrochemical cell, and a cyclic coulometer to evaluate performance of the electrochemical cell. The cyclic coulometer can adjust at least one of a charge time for applying the charge current, or a discharge time for applying the discharge current, to keep a monitored cell voltage toward a specific setpoint. The adjustment of charge or discharge time can be achieved by changing a current switch timing for reversing current from a first to a second current direction. The cyclic coulometer measures one or more electrical parameters during the charge or discharge cycle, and generates a performance metric using the measured electrical parameters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

High voltage GaN p-n diodes formed by selective area regrowth

GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a 150 gm diameter achieved 840 V operation at 0.5 A/cm 2 reverse current leakage and a specific on-resistance of 1.2 mΩ•cm 2 . Etched-and-regrown diodes were compared with planar, regrown diodes without etching on the same wafer. Both types of diodes exhibited similar forward and reverse electrical characteristics, which indicate that etch-induced defectivity of the junction was sufficiently mitigated soas not to be the primary cause for leakage. An area dependence for forward and reverse leakage current density was observed, suggesting that the mesa sidewall provided a leakage path.

42 ENGINEERING↗
DOE OSTI2025

Design and Fabrication of a Thyristor Using Ion Implantation of Anode and Cathode

A thyristor is a solid-state semiconductor switch made up of four alternating p and n type layers. When the switch is turned on by a small pulse, current can flow as long as the device stays on. When the voltage drops below the turn on level or the current reverses, the switch will turn off. Thyristors only allow current to flow in one direction. One of the benefits of a thyristor device is in its capacity to conduct large voltages with a small device and a small turn-on pulse requirement. Another distinguishing feature of thyristors compared to other semiconductor devices is that it can only be in the on or off state, there’s no in-between state for the device to exist within. These properties make thyristors very useful as switch devices, especially in applications where current flow is only needed in one direction and could potentially be damaging in the opposite direction. Currently, thyristors are most commonly used to control very high power loads and they are available commercially in many designs to control different amounts of current.

42 ENGINEERING↗
DOE OSTI2025

Interplay between Chiro-Optical and Spin Transport Properties in Chiral CdSe Quantum Dots

The chiral-induced spin selectivity (CISS) effect offers compelling approaches for manipulating spin-dependent processes in both chemistry and physics, yet the physical mechanism(s) underpinning CISS are still debated. Here we present a study of structure-property relationships in chiral quantum dot assemblies to identify attributes of CISS-based phenomena. Our results show that the circular dichroism (CD) strength of chiral CdSe quantum dots’ primary exciton transition correlates with two CISS properties, the propensity to transmit pure spin currents and to produce spin-polarized charge currents. While the spin-polarized charge current reverses its sign with a change in the polarity of the CD signal, the pure spin current transport does not. The trends in both transport types can be rationalized in terms of chirality-induced splitting of spin sub-bands, which are modulated by chiral symmetry breaking under charge transport through the CdSe quantum dots.

cadmium selenide↗
DOE OSTI2023

Electrical, optical, and magnetic properties of amorphous yttrium iron oxide thin films and consequences for non-local resistance measurements

We present magnetic characterization, charge resistivity, and optical photoluminescence measurements on amorphous yttrium iron oxide thin films ( ⁠a-Y–Fe–O), with supporting comparisons to amorphous germanium (⁠ a-Ge) films. We measured magnetic properties with both SQUID magnetometry and polarized neutron reflectometry. These results not only confirm that a-Y–Fe–O is a disordered magnetic material with strong predominantly antiferromagnetic exchange interactions and a high degree of frustration, but also that it is best understood electrically as a disordered semiconductor. As with amorphous germanium, a-Y–Fe–O obeys expectations for variable-range hopping through localized electron states over a wide range of temperature. We also clarify the consequences of charge transport through such a semiconducting medium for non-local voltage measurements intended to probe spin transport in nominally insulating magnetic materials. We further compare non-local resistance measurements made with “quasi-dc” automated current reversal to ac measurements made with a lock-in amplifier. These show that the “quasi-dc” measurement has an effective ac current excitation with frequency up to approximately 22 Hz, and that this effective ac excitation can cause artifacts in these measurements including incorrect sign of the non-local resistance. Here, this comprehensive investigation of non-local resistance measurements in a-Y–Fe–O shows no evidence of spin transport on micrometer length scales, which is contrary to our original work, and in line with more recent investigations by other groups.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Current-Driven Magnetization Reversal in Orbital Chern Insulators

Graphene multilayers with flat moiré minibands can exhibit the quantized anomalous Hall effect due to the combined influence of spontaneous valley polarization and topologically nontrivial valley-projected bands. The sign of the Hall effect in these Chern insulators can be reversed either by applying an external magnetic field, or by driving a transport current through the system. Here we propose a current-driven mechanism whereby reversal occurs along lines in the (current I , magnetic-field B ) control parameter space with slope d I / d B = ( e / h ) M A M ( 1 – γ 2 ) / γ , where M is the magnetization, A M is the moiré unit cell area, and γ < 1 is the ratio of the chemical potential difference between valleys along a domain wall to the electrical bias e V .

2-dimensional systems↗
DOE OSTI2023

XCT System for Harvesting In-Current Hydrokinetic Energy from Low-Velocity Sites

The Project demonstrated the functionality of a cross cutting (XCT) type turbine in laboratory and open water testing. The fundamental design approach of locating small axial rotors near the ends of driving spars, which pull the rotors through the water at a multiple of the free-stream velocity eliminates the need (and thus the cost) for a gearbox and torque resisting structures. This configuration, however, introduces the complexity of transmitting electricity across a rotating interface. Even so, cost models indicate that depending on the anchoring and mooring system, LCOE less than $0.10/kWh should be possible in high capacity-factor sites with non-reversing currents.

13 HYDRO ENERGY↗