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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Highly cascaded first-order sapphire optical fiber Bragg gratings fabricated by a femtosecond laser

This Letter reports an innovative technique for fabricating large-scale, highly cascaded first-order sapphire optical fiber Bragg gratings (FBGs) using a femtosecond laser-assisted point-by-point inscription method. For the first time, to the best of our knowledge, this study successfully demonstrates a distributed array of 10 FBGs within highly multimode sapphire crystal fiber, made possible by employing a high-power laser technique to generate larger reflectors with a Gaussian intensity profile. These first-order FBGs offer advantages such as enhanced reflectivity, shorter fabrication time, and simplified spectral characteristics, making them easier to interpret compared with high-order FBGs. The FBGs’ resilience and effectiveness are analyzed by subjecting them to temperature tests, proving their capacity for accurate temperature monitoring up to 1500°C—a testament to their suitability for harsh environments. This novel approach broadens the scope for sensing and communication applications in sapphire fibers, particularly under challenging conditions. The novelty of our work lies in successfully overcoming the limitations of previous designs by integrating a cascade of 10 FBGs in sapphire fibers, thereby enhancing multiplexing capabilities, minimizing overlapping of FBG peaks, and ensuring reliable temperature monitoring in industries and applications with thermal gradients.

47 OTHER INSTRUMENTATION↗
NASA NTRS1975

Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

Bonding of an element comprising sapphire, ruby or blue sapphire to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide is discussed. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

Deluca, J. J.↗
NASA NTRS1979

Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

An element comprising sapphire, ruby or blue sapphire can be bonded to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

Deluca, J. J.↗
DOE OSTI2022

Plasma-Assisted Epitaxy of Piezoelectric Sc x Al 1-x N Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors

The Sc x Al 1-x N wurtzite structure has been shown theoretically and experimentally to exhibit significantly higher piezoelectric coupling compared to pure AlN. In this work, a plasma-assisted epitaxial growth method has been used to synthesize epitaxial (0002) Sc x Al 1-x N films on c-sapphire substrates from x = 0.07 to 0.30 by co-evaporating high-purity Sc and Al sources in the presence of a nitrogen plasma generated by an RF plasma source. Epitaxial Sc x Al 1-x N films with highly oriented (0002) grains and in-plane registry were produced on c-sapphire substrates that were pre-exposed to the nitrogen plasma to form an oxynitride seed layer. Growth of Sc x Al 1-x N films was carried out at 930°C under both metal-rich and N-rich conditions using precisely controlled Sc, Al, and N-plasma fluxes. Metal-rich depositions yielded non-(0002)-oriented Sc x Al 1-x N grains and intermetallic ScAl grains. Nitrogen-rich growth with a Sc/Al flux ratio of 1/3 produced the best (0002) epitaxy as determined by x-ray diffraction analysis. Surface acoustic wave resonator (SAWR) devices were fabricated from 500-nm-thick Sc x Al 1-x N and AlN films to extract their electromechanical coupling coefficients, k 2 . As the Sc concentration in the films increases, the degree of (0002) epitaxy is reduced, yet the value of k 2 increases becasue there is more Sc in the wurzite lattice despite the decreased level of (0002) grain alignment. As a result, the use of a 10-nm-thick Si x N y capping layer on top of the Sc x Al 1-x N films aids in preventing etching during SAWR device photolithography and also helps hinder film oxidation up to 800°C.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Eutectic bonding of sapphire to sapphire

Eutectic mixture of aluminum oxide and zirconium oxide provides new bonding technique for sapphires and rubies. Technique effectively reduces possibility of contamination. Bonding material is aluminum oxide and zirconium oxide mixture that matches coefficient of thermal expansion of sapphire.

Deluca, J. J.↗
DOE OSTI2020

Sapphire advanced mitigation process: wet etch to expose sub-surface damage and increase laser damage resistance and mechanical strength

In this study, a novel, to the best of our knowledge, method of wet chemical etching of sapphire workpieces (such as optics, wafers, windows, and cones), called the sapphire advanced mitigation process (or sapphire AMP), has been developed that exposes sub-surface mechanical damage created during the optical fabrication process and significantly enhances the surface laser damage resistance (> 2×) and mechanical strength (up to ~ 2.6×). Sapphire AMP involves first treating the workpiece with a mixture of sulfuric and phosphoric acid ([H 2 SO 4 ]:[H 3 PO 4 ]= 1 : 3) at 220°C, followed with phosphoric acid at 160°C, then with sodium hydroxide base (NaOH) and surfactant at 40°C, and finally with a high-pressure deionized water spray rinse. Sapphire AMP has been demonstrated on both A- and C-plane sapphire workpieces. The mechanism of this etch process involves the reaction of the sapphire (Al 2 O 3 ) surface with sulfuric acid (H 2 SO 4 ) forming aluminum sulfate [Al2(SO4)3], which has low solubility. The high phosphoric acid content in the first and second steps of sapphire AMP results in the efficient conversion of Al 2 (SO 4 ) 3 to aluminum phosphate (AlPO 4 ), which is very soluble, greatly reducing reaction product redeposition on the workpiece surface. Sapphire AMP is shown to expose sub-surface mechanical damage on the sapphire surface created during the grinding and polishing processes, whose etched morphology has either isotropic or anisotropic evolution depending on the nature of the initial surface damage. Sapphire AMP was also designed to remove the key known surface, laser absorbing precursors (namely, foreign chemical impurities, the fracture surface layer of preexisting sub-surface damage, and reaction product or foreign species redeposition or precipitation). Static and sliding indention induced surface microfractures on sapphire are shown after sapphire AMP to have a significant decrease in the fast photoluminescence intensity (a known metric for measuring the degree of laser damaging absorbing precursors). In addition, the onset of laser damage (at 351 nm 3 ns) on sapphire AMP treated workpieces was shown to increase in fluence from ~ 4 to >9.5J/cm 2 . Finally, biaxial ball-on-ring mechanical tests on sapphire disks showed an increase in the failure stress from 340 MPa (with pre-existing 28 µm flaws) to ~ 900MPa after sapphire AMP, which is attributed to the blunting of the surface microfractures.

36 MATERIALS SCIENCE↗
NASA NTRS2011

Miniature Sapphire Acoustic Resonator - MSAR

A room temperature sapphire acoustics resonator incorporated into an oscillator represents a possible opportunity to improve on quartz ultrastable oscillator (USO) performance, which has been a staple for NASA missions since the inception of spaceflight. Where quartz technology is very mature and shows a performance improvement of perhaps 1 dB/decade, these sapphire acoustic resonators when integrated with matured quartz electronics could achieve a frequency stability improvement of 10 dB or more. As quartz oscillators are an essential element of nearly all types of frequency standards and reference systems, the success of MSAR would advance the development of frequency standards and systems for both groundbased and flight-based projects. Current quartz oscillator technology is limited by quartz mechanical Q. With a possible improvement of more than x 10 Q with sapphire acoustic modes, the stability limit of current quartz oscillators may be improved tenfold, to 10(exp -14) at 1 second. The electromagnetic modes of sapphire that were previously developed at JPL require cryogenic temperatures to achieve the high Q levels needed to achieve this stability level. However sapphire fs acoustic modes, which have not been used before in a high-stability oscillator, indicate the required Q values (as high as Q = 10(exp 8)) may be achieved at room temperature in the kHz range. Even though sapphire is not piezoelectric, such a high Q should allow electrostatic excitation of the acoustic modes with a combination of DC and AC voltages across a small sapphire disk (approximately equal to l mm thick). The first evaluations under this task will test predictions of an estimated input impedance of 10 kilohms at Q = 10(exp 8), and explore the Q values that can be realized in a smaller resonator, which has not been previously tested for acoustic modes. This initial Q measurement and excitation demonstration can be viewed similar to a transducer converting electrical energy to mechanical energy and back. Such an electrostatic tweeter type excitation of a mechanical resonator will be tested at 5 MHz. Finite element calculation will be applied to resonator design for the desired resonator frequency and optimum configuration. The experiment consists of the sapphire resonator sandwiched between parallel electrodes. A DC+AC voltage can be applied to generate a force to act on a sapphire resonator. With the frequency of the AC voltage tuned to the sapphire resonator frequency, a resonant condition occurs and the sapphire Q can be measured with a high-frequency impedance analyzer. To achieve high Q values, many experimental factors such as vacuum seal, gas damping effects, charge buildup on the sapphire surface, heat dissipation, sapphire anchoring, and the sapphire mounting configuration will need attention. The effects of these parameters will be calculated and folded into the resonator design. It is envisioned that the initial test configuration would allow for movable electrodes to check gap spacing dependency and verify the input impedance prediction. Quartz oscillators are key components in nearly all ground- and space-based communication, tracking, and radio science applications. They play a key role as local oscillators for atomic frequency standards and serve as flywheel oscillators or to improve phase noise in high performance frequency and timing distribution systems. With ultra-stable performance from one to three seconds, an Earth-orbit or moon-based MSAR can enhance available performance options for spacecraft due to elimination of atmospheric path degradation.

Wang, Rabi T.↗
DOE OSTI2023

High-Fluence Active Irradiation and Combined Effects Testing of Sapphire Optical Fiber Distributed Temperature Sensors

The goal of this work was to investigate the in-core performance of sapphire optical fiber temperature sensors and to develop clad sapphire optical fibers for in-core instrumentation. We fabricated clad sapphire optical fibers and evaluated the distributed sensing performance of these sensors via optical backscatter reflectometry under high fluence and combined radiation and temperature effects. A series of irradiations was completed to evaluate the effect of irradiation on sapphire optical fiber temperature sensors and to determine the operational limits of these sensors. (1) Objective 1: Fabricate sapphire optical fiber sensors. (2) Objective 2: Evaluate the clad sapphire fiber to verify single-mode behavior and determine and characterize the light modes supported by optical fibers. (3) Objective 3: Characterize the in-core temperature sensing of sapphire optical fiber, as well as the combined temperature and irradiation effects. (4) Objective 4: Evaluate the lifetime and performance of the sensor under irradiation to high neutron fluence. Objectives 1, 2, and 3 were completed during the first 2 years of the project. Due to the Covid pandemic, Objective 4, a high-fluence irradiation performed at the Massachusetts Institute of Technology Research Reactor (MITR), was delayed, as partner facilities were subject to mandatory shutdowns and required a 1 year, no-cost extension. This irradiation was eventually completed on December 12, 2022. This work indicates that sapphire optical fiber sensors may be a solution for ultra-high-temperature applications in which traditional silica optical fibers are prone to fail. Sapphire sensors are potentially suitable for experiments featuring temperatures above 700°C for long periods of time, or for any length of time above 1000°C. Experiments featuring a low total fluence, such as irradiations conducted in the Transient Reactor Test (TREAT) facility, also represent good applications for sapphire optical sensors. Additional work is required to characterize the sapphire fiber cladding performance, which falls outside the scope of this project, as well as the effects of high temperatures on the response of the fiber. A comprehensive material study is recommended as future work to evaluate the attenuation in sapphire under irradiation, and how that attenuation changes with irradiation temperature. The drift and attenuation in the fiber at temperatures of up to 1600°C and a total fluence of up to 2.9 x 10 17 n/cm 2 was minimal, and the fibers returned to baseline after being heated to 1600°C under irradiation. This is promising for the future use of sapphire optical fibers in advanced reactors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1995

Influence of Cr and W alloying on the fiber-matrix interfacial shear strength in cast and directionally solidified sapphire NiAl composites

Sapphire-reinforced NiAl matrix composites with chromium or tungsten as alloying additions were synthesized using casting and zone directional solidification (DS) techniques and characterized by a fiber pushout test as well as by microhardness measurements. The sapphire-NiAl(Cr) specimens exhibited an interlayer of Cr rich eutectic at the fiber-matrix interface and a higher interfacial shear strength compared to unalloyed sapphire-NiAl specimens processed under identical conditions. In contrast, the sapphire-NiAl(W) specimens did not show interfacial excess of tungsten rich phases, although the interfacial shear strength was high and comparable to that of sapphire-NiAl(Cr). The postdebond sliding stress was higher in sapphire-NiAl(Cr) than in sapphire-NiAl(W) due to interface enrichment with chromium particles. The matrix microhardness progressively decreased with increasing distance from the interface in both DS NiAl and NiAl(Cr) specimens. The study highlights the potential of casting and DS techniques to improve the toughness and strength of NiAl by designing dual-phase microstructures in NiAl alloys reinforced with sapphire fibers.

Asthana, R.↗
DOE OSTI2023

Precision Measurement of the Microwave Dielectric Loss of Sapphire in the Quantum Regime with Parts-per-Billion Sensitivity

Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of 100 parts per billion but because these inferences are drawn from fully fabricated devices with many loss channels, these experiments do not definitely implicate or exonerate the dielectric. To resolve this ambiguity, we devise a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5 ×10 –9 . The method, which we call the dielectric dipper, involves the in situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the participation of the sample in the cavity mode enables a differential measurement of the dielectric loss tangent of the sample. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of sapphire grown by edge-defined film-fed growth (EFG) in comparison to high-grade sapphire grown by the heat-exchanger method (HEMEX). For EFG sapphire, we infer a bulk loss tangent of 63⁢(8) ×10 –9 and a substrate-air interface loss tangent of 15⁢(3) ×10 –4 (assuming a sample surface thickness of 3 nm). For a typical transmon, this bulk loss tangent would limit device quality factors to Q ≲20 ×10 6 , suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 19⁢(6) ×10 –9 . As this bound is about 3 times smaller than the bulk loss tangent of EFG sapphire, the use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1993

High performance sapphire windows

High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

Bates, Stephen C.↗
NASA NTRS1993

Advances in sapphire optical fiber sensors

We describe the development and testing of two sapphire fiber sensor designs intended for use in high temperature environments. The first is a birefringence-balanced polarimetric sapphire fiber sensor. In this sensor, two single crystal sapphire rods, acting as the birefringence sensing element, are connected to each other in such a way that the slow axis of the first rod is aligned along with the fast axis of the second rod, and the fast axis of the first rod is along the slow axis of the second rod. This sensor has been demonstrated for measurement of temperature up to 1500 C. The second is a sapphire-fiber-based intrinsic interferometric sensor. In this sensor, a length of uncoated, unclad, structural-graded multimode sapphire fiber is fusion spliced to a singlemode silica fiber to form a Fabry-Perot cavity. The reflections from the silica-to-sapphire fiber splice and the free endface of the sapphire fiber give rise to the interfering fringe output. This sensor has been demonstrated for the measurement of temperature above 1510 C, and a resolution of 0.1 C has been obtained.

Wang, Anbo↗
NASA NTRS1998

Electron Beam Welder Used to Braze Sapphire to Platinum

A new use for electron beam brazing was recently developed by NASA Lewis Research Center's Manufacturing Engineering Division. This work was done to fabricate a fiberoptic probe (developed by Sentec Corporation) that could measure high temperatures less than 600 deg C of vibrating machinery, such as in jet engine combustion research. Under normal circumstances, a sapphire fiber would be attached to platinum by a ceramic epoxy. However, no epoxies can adhere ceramic fibers to platinum under such high temperatures and vibration. Also, since sapphire and platinum have different thermal properties, the epoxy bond is subjected to creep over time. Therefore, a new method had to be developed that would permanently and reliably attach a sapphire fiber to platinum. Brazing a sapphire fiber to a platinum shell. The fiber-optic probe assembly consists of a 0.015-in.-diameter sapphire fiber attached to a 0.25-in.-long, 0.059-in.-diameter platinum shell. Because of the small size of this assembly, electron beam brazing was chosen instead of conventional vacuum brazing. The advantage of the electron beam is that it can generate a localized heat source in a vacuum. Gold reactive braze was used to join the sapphire fiber and the platinum. Consequently, the sapphire fiber was not affected by the total heat needed to braze the components together.

Forsgren, Roger C.↗
NASA NTRSDate not supplied

Removing Contamination from Genesis Sapphire Collectors by Polishing

The Genesis Solar Wind Sample Re-turn Mission used a variety of materials as solar wind (SW) collectors. “Sapphire”, which is single crystal corundum, was ~6.7% of the collector material flown. But, a much higher percentage of Genesis sapphire collectors (SAP) survived the crash of the sample-return capsule as SAP is chemically inert, physically tough, and hard (MOHS 9, by definition). In fact, 39 sapphire fragments of bulk SW collector having areas ≥60 sq mm are available in JSC’s Genesis online catalog, whereas only 1 similarly sized silicon fragment is available (accessed 1/1/2020). In spite of the ease of accessing larger fragments, sapphire has not been popular among Genesis re-searchers because it is an electrical insulator (making SIMS more difficult) and its chemical inertness, high melting point and high hardness precludes the use of many mass-spectroscopic techniques. Recently, as alternative techniques for measuring Genesis samples are developed (e.g., synchrotron TXRF, INAA, laser ablation mass spectroscopy), more researchers are choosing to analyze sapphire. Thus, a number of researchers are actively studying how to best remove contamination from the Genesis sapphire surfaces. This report extends the task in Schmeling et al. that used polishing compounds to remove contamination from Genesis sapphire and focuses on contaminants (welded silicon, aluminum) that current chemical methods find recalcitrant.

M. Schmeling↗
DOE OSTI2021

Optical transmission and dimensional stability of single-crystal sapphire after high-dose neutron irradiation at various temperatures up to 688 °C

The use of single-crystal sapphire optical fibers has been considered to extend fiber-optic sensing to the extreme temperature (>1000 °C) environments encountered in nuclear applications. However, before these sapphire fiber–based sensors can be deployed, their optical transmission and dimensional stability (which impacts drift of some sensors) must be characterized under representative testing conditions. Data regarding the optical transmission of sapphire following high-dose neutron irradiation at temperatures >100 °C is extremely limited. This work provides measurements of optical density (i.e., attenuation) and directional dimensional changes in bulk single-crystal sapphire materials irradiated to a fast neutron fluence of 2.4 × 10 21 n/cm 2 (3.5 displacements per atom) at temperatures ranging from 95 to 688 °C. Optical density measured after irradiation at 95 and 298 °C showed ultraviolet and visible absorption bands corresponding to known defect centers and temperature trends that were generally consistent with previous ex situ and in situ measurements made at much lower neutron fluence. However, optical density measured after irradiation at 688 °C was as much as two orders of magnitude higher, indicating that the fundamental mechanism for radiation-induced attenuation changes at this irradiation temperature. Additional analysis and comparison with previous works suggest that the attenuation may result from void formation, leading to increased Rayleigh scattering losses in the material and increased swelling that would also result in drift of Bragg grating-based sensors in sapphire fibers. These results pose serious questions regarding the feasibility of sapphire fiber–based sensors for high-temperature nuclear applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Distributed Sapphire Fiber Bragg Gratings Based Thermal Profiling of Submerged Entry Nozzles

This research focuses on the application of sapphire fiber Bragg gratings (FBGs) for instrumentation in submerged entry nozzles (SEN) within the steelmaking industry. The SEN is pivotal for transferring molten steel from a tundish to a mold, while preventing the infiltration of oxygen and nitrogen from the surrounding environment. Maintaining optimal flow conditions in the mold is crucial for ensuring casting process stability and maintaining high quality steel. Sapphire FBG sensors have been instrumented in SENs to enable distributed thermal mapping for monitoring the health of the SEN. The optical sensor comprises three cascaded sapphire FBGs inscribed using femtosecond laser technology into a one-meter-long sapphire crystalline fiber. The sensor underwent characterization in a laboratory setting up to 1600°C and was tested for long-term stability over 40 hours under extreme environmental conditions. The coupling between silica and sapphire fibers was investigated and implemented during sensor packaging. Here, the sensor successfully captured the pre-heat sequence of the SEN in real-world steelmaking operations. Compared to conventional thermocouples, sapphire FBG sensors demonstrated exceptional efficiency and precision. They offer potential benefits such as increased productivity, reduced energy consumption, and minimized carbon footprint in the steel industry.

Sapphire Fiber Bragg Grating↗