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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Highly cascaded first-order sapphire optical fiber Bragg gratings fabricated by a femtosecond laser

This Letter reports an innovative technique for fabricating large-scale, highly cascaded first-order sapphire optical fiber Bragg gratings (FBGs) using a femtosecond laser-assisted point-by-point inscription method. For the first time, to the best of our knowledge, this study successfully demonstrates a distributed array of 10 FBGs within highly multimode sapphire crystal fiber, made possible by employing a high-power laser technique to generate larger reflectors with a Gaussian intensity profile. These first-order FBGs offer advantages such as enhanced reflectivity, shorter fabrication time, and simplified spectral characteristics, making them easier to interpret compared with high-order FBGs. The FBGs’ resilience and effectiveness are analyzed by subjecting them to temperature tests, proving their capacity for accurate temperature monitoring up to 1500°C—a testament to their suitability for harsh environments. This novel approach broadens the scope for sensing and communication applications in sapphire fibers, particularly under challenging conditions. The novelty of our work lies in successfully overcoming the limitations of previous designs by integrating a cascade of 10 FBGs in sapphire fibers, thereby enhancing multiplexing capabilities, minimizing overlapping of FBG peaks, and ensuring reliable temperature monitoring in industries and applications with thermal gradients.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Plasma-Assisted Epitaxy of Piezoelectric Sc x Al 1-x N Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors

The Sc x Al 1-x N wurtzite structure has been shown theoretically and experimentally to exhibit significantly higher piezoelectric coupling compared to pure AlN. In this work, a plasma-assisted epitaxial growth method has been used to synthesize epitaxial (0002) Sc x Al 1-x N films on c-sapphire substrates from x = 0.07 to 0.30 by co-evaporating high-purity Sc and Al sources in the presence of a nitrogen plasma generated by an RF plasma source. Epitaxial Sc x Al 1-x N films with highly oriented (0002) grains and in-plane registry were produced on c-sapphire substrates that were pre-exposed to the nitrogen plasma to form an oxynitride seed layer. Growth of Sc x Al 1-x N films was carried out at 930°C under both metal-rich and N-rich conditions using precisely controlled Sc, Al, and N-plasma fluxes. Metal-rich depositions yielded non-(0002)-oriented Sc x Al 1-x N grains and intermetallic ScAl grains. Nitrogen-rich growth with a Sc/Al flux ratio of 1/3 produced the best (0002) epitaxy as determined by x-ray diffraction analysis. Surface acoustic wave resonator (SAWR) devices were fabricated from 500-nm-thick Sc x Al 1-x N and AlN films to extract their electromechanical coupling coefficients, k 2 . As the Sc concentration in the films increases, the degree of (0002) epitaxy is reduced, yet the value of k 2 increases becasue there is more Sc in the wurzite lattice despite the decreased level of (0002) grain alignment. As a result, the use of a 10-nm-thick Si x N y capping layer on top of the Sc x Al 1-x N films aids in preventing etching during SAWR device photolithography and also helps hinder film oxidation up to 800°C.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Sapphire advanced mitigation process: wet etch to expose sub-surface damage and increase laser damage resistance and mechanical strength

In this study, a novel, to the best of our knowledge, method of wet chemical etching of sapphire workpieces (such as optics, wafers, windows, and cones), called the sapphire advanced mitigation process (or sapphire AMP), has been developed that exposes sub-surface mechanical damage created during the optical fabrication process and significantly enhances the surface laser damage resistance (> 2×) and mechanical strength (up to ~ 2.6×). Sapphire AMP involves first treating the workpiece with a mixture of sulfuric and phosphoric acid ([H 2 SO 4 ]:[H 3 PO 4 ]= 1 : 3) at 220°C, followed with phosphoric acid at 160°C, then with sodium hydroxide base (NaOH) and surfactant at 40°C, and finally with a high-pressure deionized water spray rinse. Sapphire AMP has been demonstrated on both A- and C-plane sapphire workpieces. The mechanism of this etch process involves the reaction of the sapphire (Al 2 O 3 ) surface with sulfuric acid (H 2 SO 4 ) forming aluminum sulfate [Al2(SO4)3], which has low solubility. The high phosphoric acid content in the first and second steps of sapphire AMP results in the efficient conversion of Al 2 (SO 4 ) 3 to aluminum phosphate (AlPO 4 ), which is very soluble, greatly reducing reaction product redeposition on the workpiece surface. Sapphire AMP is shown to expose sub-surface mechanical damage on the sapphire surface created during the grinding and polishing processes, whose etched morphology has either isotropic or anisotropic evolution depending on the nature of the initial surface damage. Sapphire AMP was also designed to remove the key known surface, laser absorbing precursors (namely, foreign chemical impurities, the fracture surface layer of preexisting sub-surface damage, and reaction product or foreign species redeposition or precipitation). Static and sliding indention induced surface microfractures on sapphire are shown after sapphire AMP to have a significant decrease in the fast photoluminescence intensity (a known metric for measuring the degree of laser damaging absorbing precursors). In addition, the onset of laser damage (at 351 nm 3 ns) on sapphire AMP treated workpieces was shown to increase in fluence from ~ 4 to >9.5J/cm 2 . Finally, biaxial ball-on-ring mechanical tests on sapphire disks showed an increase in the failure stress from 340 MPa (with pre-existing 28 µm flaws) to ~ 900MPa after sapphire AMP, which is attributed to the blunting of the surface microfractures.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High-Fluence Active Irradiation and Combined Effects Testing of Sapphire Optical Fiber Distributed Temperature Sensors

The goal of this work was to investigate the in-core performance of sapphire optical fiber temperature sensors and to develop clad sapphire optical fibers for in-core instrumentation. We fabricated clad sapphire optical fibers and evaluated the distributed sensing performance of these sensors via optical backscatter reflectometry under high fluence and combined radiation and temperature effects. A series of irradiations was completed to evaluate the effect of irradiation on sapphire optical fiber temperature sensors and to determine the operational limits of these sensors. (1) Objective 1: Fabricate sapphire optical fiber sensors. (2) Objective 2: Evaluate the clad sapphire fiber to verify single-mode behavior and determine and characterize the light modes supported by optical fibers. (3) Objective 3: Characterize the in-core temperature sensing of sapphire optical fiber, as well as the combined temperature and irradiation effects. (4) Objective 4: Evaluate the lifetime and performance of the sensor under irradiation to high neutron fluence. Objectives 1, 2, and 3 were completed during the first 2 years of the project. Due to the Covid pandemic, Objective 4, a high-fluence irradiation performed at the Massachusetts Institute of Technology Research Reactor (MITR), was delayed, as partner facilities were subject to mandatory shutdowns and required a 1 year, no-cost extension. This irradiation was eventually completed on December 12, 2022. This work indicates that sapphire optical fiber sensors may be a solution for ultra-high-temperature applications in which traditional silica optical fibers are prone to fail. Sapphire sensors are potentially suitable for experiments featuring temperatures above 700°C for long periods of time, or for any length of time above 1000°C. Experiments featuring a low total fluence, such as irradiations conducted in the Transient Reactor Test (TREAT) facility, also represent good applications for sapphire optical sensors. Additional work is required to characterize the sapphire fiber cladding performance, which falls outside the scope of this project, as well as the effects of high temperatures on the response of the fiber. A comprehensive material study is recommended as future work to evaluate the attenuation in sapphire under irradiation, and how that attenuation changes with irradiation temperature. The drift and attenuation in the fiber at temperatures of up to 1600°C and a total fluence of up to 2.9 x 10 17 n/cm 2 was minimal, and the fibers returned to baseline after being heated to 1600°C under irradiation. This is promising for the future use of sapphire optical fibers in advanced reactors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Precision Measurement of the Microwave Dielectric Loss of Sapphire in the Quantum Regime with Parts-per-Billion Sensitivity

Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of 100 parts per billion but because these inferences are drawn from fully fabricated devices with many loss channels, these experiments do not definitely implicate or exonerate the dielectric. To resolve this ambiguity, we devise a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5 ×10 –9 . The method, which we call the dielectric dipper, involves the in situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the participation of the sample in the cavity mode enables a differential measurement of the dielectric loss tangent of the sample. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of sapphire grown by edge-defined film-fed growth (EFG) in comparison to high-grade sapphire grown by the heat-exchanger method (HEMEX). For EFG sapphire, we infer a bulk loss tangent of 63⁢(8) ×10 –9 and a substrate-air interface loss tangent of 15⁢(3) ×10 –4 (assuming a sample surface thickness of 3 nm). For a typical transmon, this bulk loss tangent would limit device quality factors to Q ≲20 ×10 6 , suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 19⁢(6) ×10 –9 . As this bound is about 3 times smaller than the bulk loss tangent of EFG sapphire, the use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Optical transmission and dimensional stability of single-crystal sapphire after high-dose neutron irradiation at various temperatures up to 688 °C

The use of single-crystal sapphire optical fibers has been considered to extend fiber-optic sensing to the extreme temperature (>1000 °C) environments encountered in nuclear applications. However, before these sapphire fiber–based sensors can be deployed, their optical transmission and dimensional stability (which impacts drift of some sensors) must be characterized under representative testing conditions. Data regarding the optical transmission of sapphire following high-dose neutron irradiation at temperatures >100 °C is extremely limited. This work provides measurements of optical density (i.e., attenuation) and directional dimensional changes in bulk single-crystal sapphire materials irradiated to a fast neutron fluence of 2.4 × 10 21 n/cm 2 (3.5 displacements per atom) at temperatures ranging from 95 to 688 °C. Optical density measured after irradiation at 95 and 298 °C showed ultraviolet and visible absorption bands corresponding to known defect centers and temperature trends that were generally consistent with previous ex situ and in situ measurements made at much lower neutron fluence. However, optical density measured after irradiation at 688 °C was as much as two orders of magnitude higher, indicating that the fundamental mechanism for radiation-induced attenuation changes at this irradiation temperature. Additional analysis and comparison with previous works suggest that the attenuation may result from void formation, leading to increased Rayleigh scattering losses in the material and increased swelling that would also result in drift of Bragg grating-based sensors in sapphire fibers. These results pose serious questions regarding the feasibility of sapphire fiber–based sensors for high-temperature nuclear applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Distributed Sapphire Fiber Bragg Gratings Based Thermal Profiling of Submerged Entry Nozzles

This research focuses on the application of sapphire fiber Bragg gratings (FBGs) for instrumentation in submerged entry nozzles (SEN) within the steelmaking industry. The SEN is pivotal for transferring molten steel from a tundish to a mold, while preventing the infiltration of oxygen and nitrogen from the surrounding environment. Maintaining optimal flow conditions in the mold is crucial for ensuring casting process stability and maintaining high quality steel. Sapphire FBG sensors have been instrumented in SENs to enable distributed thermal mapping for monitoring the health of the SEN. The optical sensor comprises three cascaded sapphire FBGs inscribed using femtosecond laser technology into a one-meter-long sapphire crystalline fiber. The sensor underwent characterization in a laboratory setting up to 1600°C and was tested for long-term stability over 40 hours under extreme environmental conditions. The coupling between silica and sapphire fibers was investigated and implemented during sensor packaging. Here, the sensor successfully captured the pre-heat sequence of the SEN in real-world steelmaking operations. Compared to conventional thermocouples, sapphire FBG sensors demonstrated exceptional efficiency and precision. They offer potential benefits such as increased productivity, reduced energy consumption, and minimized carbon footprint in the steel industry.

Sapphire Fiber Bragg Grating↗
DOE OSTI2023

Step engineering for nucleation and domain orientation control in WSe 2 epitaxy on c -plane sapphire

In this study, epitaxial growth of two-dimensional transition metal dichalcogenides on sapphire has emerged as a promising route to wafer-scale single-crystal films. Steps on the sapphire act as sites for transition metal dichalcogenide nucleation and can impart a preferred domain orientation, resulting in a substantial reduction in mirror twins. Here we demonstrate control of both the nucleation site and unidirectional growth direction of WSe 2 on c-plane sapphire by metal–organic chemical vapour deposition. The unidirectional orientation is found to be intimately tied to growth conditions via changes in the sapphire surface chemistry that control the step edge location of WSe 2 nucleation, imparting either a 0° or 60° orientation relative to the underlying sapphire lattice. The results provide insight into the role of surface chemistry on transition metal dichalcogenide nucleation and domain alignment and demonstrate the ability to engineer domain orientation over wafer-scale substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Light Propagation Considerations For Internally Clad Sapphire Optical Fiber Using the 6Li(n,)3H Reaction

Optical frequency domain reflectometry measurements in internally clad single crystal sapphire fiber have received attention in recent years due to their high temperature distributed sensing potential. As work with these fibers has proceeded, there have been some inconsistencies in the results. Deeper investigation and testing has identified two critical considerations for the proper functioning of these fibers. First, users must address the propagation of multimode light along the outer surface of the fiber. Here, by observing the far-field image of an internally clad sapphire fiber when adding index matching fluid to the outer fiber surface, we demonstrate the effects of removing the higher order modes from these fibers. The addition of index matching fluid resulted in nearly single mode performance where multimode performance was previously observed. Second, users must address the effect that coupling the fiber to the interrogator via silica based fiber has on the internally clad sapphire fibers performance. Direct fusion splicing of silica to sapphire, as has been used in the recent work with these fibers, has a mode filtering effect which can be beneficial towards the modal behavior of the fibers. However, in this paper we demonstrate that the splicing can cause a sensing failure due to little or no low order mode light, that is useful for sensing, returning to the detector. The positive results from recent years have demonstrated that optical frequency domain reflectometry sensing performance will be successful in clad sapphire fiber; but only when the considerations described herein are addressed properly.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

High Fluence Active Irradiation and Combined Effects Testing of Sapphire Optical Fiber Distributed Temperature Sensors [Slides]

All objectives have been completed. Heated irradiation indicates potential for sapphire fiber-based sensors to be used in extreme environments beyond silica fiber temperature limits. Sapphire optical fiber may not be appropriate for high fluence applications. Clad sapphire optical fibers have a temperature-dependent attenuation that has not been observed in unclad sapphire. With the appropriate pre-treatments and data post-processing, sapphire optical fiber has the potential to serve as a distributed sensor up to 1700ºC.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2023

Cascaded Sapphire Fiber Bragg Gratings Inscribed by Femtosecond Laser for Molten Steel Studies

This research reports a distributed fiber optic high-temperature sensing system tailored for applications in the steel industry and various other sectors. Recent advancements in optical sensor technology have led to the exploration of sapphire crystal fibers as a solution for sensing in harsh environments. Utilizing a femtosecond (fs) laser, cascaded fiber Bragg gratings (FBGs) were meticulously fabricated within a multimode sapphire optical fiber. These FBGs endowed the system with distributed sensing capabilities and underwent rigorous testing under extreme temperatures, reaching up to 1800 °C. Here, the study delves into the investigation of the FBG reflection spectrum, facilitated by the development of a sophisticated multimode demodulation system, which contributed to the attainment of precise temperature measurements with a performance accuracy of 99.9%. Demonstrating exceptional thermal stability, the sapphire FBGs endured temperatures of 1600 °C for a sustained duration of 22 h. Furthermore, this article explores the application of distributed temperature sensing employing multiple sapphire FBGs, showcasing their utility in temperature measurements related to molten steel studies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Active Irradiation Testing of Temperature Sensing Capability of Clad Sapphire Optical Fibers with Type 2 Bragg Gratings using Optical Backscatter Reflectometry

This work investigated the temperature-sensing capabilities of Type II fiber Bragg gratings (FBGs) inscribed in sapphire optical fiber in the Ohio State University Research Reactor (OSURR). A Luna Innovations 4600 optical backscatter reflectometer (OBR) was used to interrogate FBGs in three sapphire optical fibers with an internal cladding that was developed by Ohio State. The sapphire fibers were fusion-spliced to silica lead fibers. In addition to the sapphire fibers, two silica fibers with the same Type II FBGs were included in the experiment as a reference. The fiber-based sensors were irradiated in the Central Irradiation Facility (CIF) of the OSURR for a total of 40 hours over 5 days at a reactor power of 450 kW, resulting in a total neutron fluence of approximately 2.5 × 10 18 n/cm 2 and a gamma dose of approximately 3.48 Grad. Two K-type thermocouples were included within the rig: one at the core centerline and the other 12 inches above the top of the core. The temperature was not actively controlled, but the thermocouples were used to provide a reference to which the fiber-based temperature measurements could be compared.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-Fluence Active Irradiation and Combined Effects Testing of Sapphire Optical Fiber Distributed Temperature Sensors - ASI Project Summary

The goal of this work is to investigate the performance of sapphire optical fiber temperature sensors and develop clad sapphire optical fibers for in-pile instrumentation. This work tests the distributed sensing performance of sapphire sensors by using optical backscatter reflectometry methods under combined radiation/temperature effects and high fluence. A series of irradiations will be completed to evaluate the effect of irradiation on sapphire optical fiber temperature sensors and to determine an operational limit for the sensors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Au assisted smooth ultrathin epitaxial ZnO film grown by pulsed laser deposition on sapphire(0001)

High quality ZnO has applications in photonics and electronics. Literature has shown that continuous, but rough ZnO film can be grown on sapphire substrate by pulsed laser deposition (PLD). In this work, ZnO and Au were co-deposited by PLD on sapphire(0001) substrates from a single ZnO target overlaid with an Au strip that serves as a catalyst. The reflection high-energy electron diffraction (RHEED) patterns show paired double stripes from sample of ZnO-Au where the difference of in-plane lattice parameters between ZnO and Au is 11.4 %. The two-dimensional (2D) reciprocal space maps constructed from azimuthal RHEED (ARHEED) patterns reveal parallel epitaxial relationship between ZnO and Au in the continuous ZnO-Au film on sapphire substrate. Transmission electron microscopy (TEM) cross section images and energy dispersive spectroscopy maps show a minute amount of Au nanocrystals distributed in the entire ultrathin ZnO film. Atomic force microscopy shows the root-mean-square roughness of the surface of ultrathin ZnO film with Au is in the sub-nm range. The ARHEED and TEM results show that a couple of atomic percentages of Au co-deposited with ZnO catalyzes the growth of smooth ultrathin epitaxial ZnO film.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Low-threshold sapphire detector for rare event searches

Low mass nuclear recoil dark matter and coherent-elastic-neutrino-nucleus-scattering (CE$v$NS) searches confront similar challenges in choosing ultra-low threshold and large-mass detectors. Here, we report experimental results from a 100 g single-crystal sapphire detector design with a diameter of 76 mm and thickness of 4 mm instrumented with transition edge sensors (TES). Sapphire is a crystal of aluminum oxide (Al 2 O) and has been found to be a good candidate for light mass dark matter search experiments due to its lower atomic mass compared to other detector materials such as germanium and silicon. This new phonon-assisted sapphire detector was characterized to yield a baseline recoil energy resolution of 28.4 ± 0.4 eV. The detector is designed to be sensitive to low-energy rare interactions with an intention to investigate the low-mass region of dark matter phase-space and search for CE$v$NS at the reactor site.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire

MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive x-ray spectroscopy was used to estimate the cation composition ratios. To mitigate magnesium evaporation, the films were grown at pyrometer temperature 745 °C with a wafer rotation speed of 1000 rpm. Growth rates were determined by fitting energy-dispersive x-ray spectroscopy spectra to film thicknesses using NIST DTSA-II software. The thickness estimates determined by this method were consistent with scanning transmission electron microscopy measurements done for selected samples. Scanning electron microscopy images revealed faceted surfaces indicative of a tendency toward three-dimensional growth. X-ray diffraction spectra confirmed that the films were highly crystalline and exhibited preferential orientation in alignment with the substrate. Atomic force microscopy measurements show that film thicknesses are consistent across samples grown on both GaN templates and sapphire substrates, with typical roughnesses around 10 nm. Transmittance spectra of films grown on double-side-polished sapphire substrates yielded band gaps of 4.28 ± 0.06 eV for samples exhibiting close-to-ideal stoichiometry. Comparison of the measured spectra with ab initio calculations are in good agreement both near the bandgap and at higher energies where excitation is into higher-lying bands. These findings provide insight into the growth and characterization of MgGeN2, contributing to the development of this material for potential applications in optoelectronics and power electronics.

Hu, Chenxi (ORCID:0000000236299660)↗