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Results for “semiconducting polymers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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13 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Semiconducting polymers for gas detection

Conjugated polyenes, and polyesters containing phthalocyanine in their backbone, were synthesized. These polymers were characterized by chemical analysis, thermogravimetric analysis, spectral analysis, and X-ray diffraction studies for crystallinity, as well as for their film-forming capability and gas/polymer interactions. Most of the polymers were relatively insensitive to water vapor up to 50 percent relative humidity, but the polyester/phthalocyanine (iron) polymer was relatively insensitive up to 100 percent RH. On the other hand, poly(p-dimethylaminophenylacetylene) was too conductive at 100 percent RH. Of the gases tested, the only ones that gave any evidence of interacting with the polymers were SO2, NOx, HCN and NH3. Poly(imidazole)/thiophene responded to each of these gases at all relative humidities, while the other polymers gave varying response, depending upon the RH. Thus, since most of these gases were electron-accepting, the electron-donating character of poly(imidazole)/thiophene substantiates the concept of electronegativity being the operating principle for interaction effects. Of the six polymers prepared, poly(imidazole)/thiophene first showed a very good response to smoldering cotton, but it later became nonresponsive; presumably due to oxidation effects.

Byrd, N. R.↗
NASA NTRS2008

Dual-Input AND Gate From Single-Channel Thin-Film FET

A regio-regular poly(3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field effect transistor (FET) configuration. This commercially available polymer is very soluble in common organic solvents and is easily processed to form uniform thin films. The most important polymer-based device fabricated and studied is the FET, since it forms the building block in logic circuits and switches for active matrix (light-emitting-diode) (LED) displays, smart cards, and radio frequency identification (RFID) cards.

Miranda, F. A.↗
NASA NTRS1985

Thermosetting Phthalocyanine Polymers

Group of phthalocyanine polymers resist thermal degradation. Polymers expected semiconducting. Principal applications probably in molded or laminated parts that have to withstand high temperatures. Polymers made from either of two classes of monomer: Bisphthalonitriles with imide linkages or Bisphthalonitriles with ester-imide linkages.

Fohlen, G.↗
NASA NTRS1993

Preliminary results from the CONCAP-2-01 and EIOM-3 experiments on STS-46

CONCAP-2-01 (complex autonomous payload, first flight) was the maiden flight of 'CONCAP-2,' a secondary payload, utilizing the get-away special (GAS) carrier system, sponsored by the Consortium for Materials Development in Space (CMDS) at the University of Alabama in Huntsville (UAH). A host of materials such as high-T(sub c) superconductor samples, metal films, polymers, carbons, and semiconducting materials were exposed to a low earth orbit (LEO) environment. We have also measured on orbit the changes in the electrical resistance of some of the high-T(sub c) materials plus carbon and silver dosimeters exposed to the space environment. The preliminary results of this experiment are compared with those from EOIM-3, both of which flew on STS-46.

Gregory, John C.↗
NASA NTRS2017

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Diode (Nanosssd) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗
NASA NTRS2018

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Schottky Diode (Nanosssd) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗
NASA NTRS2006

FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers

A family of experimental highly miniaturized field-effect transistors (FETs) is based on exploitation of the electrical properties of nanofibers of polyaniline/ polyethylene oxide (PANi/PEO) doped with camphorsulfonic acid. These polymer-based FETs have the potential for becoming building blocks of relatively inexpensive, low-voltage, highspeed logic circuits that could supplant complementary metal oxide/semiconductor (CMOS) logic circuits. The development of these polymerbased FETs offers advantages over the competing development of FETs based on carbon nanotubes. Whereas it is difficult to control the molecular structures and, hence, the electrical properties of carbon nanotubes, it is easy to tailor the electrical properties of these polymerbased FETs, throughout the range from insulating through semiconducting to metallic, through choices of doping levels and chemical manipulation of polymer side chains. A further advantage of doped PANi/PEO nanofibers is that they can be made to draw very small currents and operate at low voltage levels, and thus are promising for applications in which there are requirements to use many FETs to obtain large computational capabilities while minimizing power demands. Fabrication of an experimental FET in this family begins with the preparation of a substrate as follows: A layer of silicon dioxide between 50 and 200 nm thick is deposited on a highly doped (resistivity 0.01 W.cm) silicon substrate, then gold electrodes/contact stripes are deposited on the oxide. Next, one or more fibers of camphorsulphonic acid-doped PANi/PEO having diameters of the order of 100 nm are electrospun onto the substrate so as to span the gap between the gold electrodes (see Figure 1). Figure 2 depicts measured current-versus-voltage characteristics of the device of Figure 1, showing that saturation channel currents occur at source-todrain potentials that are surprisingly low, relative to those of CMOS FETs. The hole mobility in the depletion regime in this transistor was found to be 1.4 10(exp -4) sq cm/(V.s), while the one-dimensional charge density at zero gate bias was estimated to be approximately one hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content of the fibers is expected to enhance the properties of future versions of this transistor.

Theofylaktos, Noulie↗
NASA NTRS2003

Characterizations of Enriched Metallic Single-Walled Carbon Nanotubes in Polymer Composite

Using different processing conditions, we disperse the single-walled carbon nanotube (SWNT) into the polymethyl methacrylate (PMMA) to form composites. In the melt-blended sample, the SWNTs originally semiconducting - became predominantly metallic after dispersion into the melt-blended composite. The interaction of the PMMA and SWNT is investigated by the polarized Raman studies. The structure changes in the PMMA and SWNT shows that the anisotropic interactions are responsible for SWNT electronic density of states (DOS) changes. The increased metallic SWNT percentage is confirmed by the conductivity and dielectric constant measurements .

Chen, Bin↗
NASA NTRS2005

Physics of Quantum Structures in Photovoltaic Devices

There has been considerable activity recently regarding the possibilities of using various nanostructures and nanomaterials to improve photovoltaic conversion of solar energy. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of three-dimensional arrays of zero-dimensional conductors (i.e., quantum dots) in an ordinary p-i-n solar cell structure. Quantum dots and other nanostructured materials may also prove to have some benefits in terms of temperature coefficients and radiation degradation associated with space solar cells. Two-dimensional semiconductor superlattices have already demonstrated some advantages in this regard. It has also recently been demonstrated that semiconducting quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. Improvement in thin film cells utilizing conjugated polymers has also be achieved through the use of one-dimensional quantum structures such as carbon nanotubes. It is believed that carbon nanotubes may contribute to both the disassociation as well as the carrier transport in the conjugated polymers used in certain thin film photovoltaic cells. In this paper we will review the underlying physics governing some of the new photovoltaic nanostructures being pursued, as well as the the current methods being employed to produce III-V, II-VI, and even chalcopyrite-based nanomaterials and nanostructures for solar cells.

Raffaelle, Ryne P.↗
NASA NTRS1993

Processible Polyazomethines

Processibility enhanced by incorporating trifluoromethylbenzene units into molecules. Results of two unexpected properties: high solubility in common organic solvents and lack of crystallinity. Properties coupled with ability of this class of polymers to undergo exchange reactions at elevated temperatures allow these materials to moderate their molecular weights during processing, which affects resulting mechanical properties after processing. Fluorinated polyazomethines form amorphous films that have excellent mechanical properties. Used in moisture-free environments as electronic semiconducting films and adhesives, and as matrix resins for advanced structural composites.

Bryant, Robert G.↗
NASA NTRS2002

Mechanics of Nanotubes and Nanotube-Polymer Composites

CNT is a tubular form of carbon with diameter as small as 1 nm. Length: few nm to microns. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube. CNT exhibits extraordinary mechanical properties: Young's modulus over 1 Tera Pascal, as stiff as diamond, and tensile strength approx. 200 GPa. CNT can be metallic or semiconducting, depending on chirality.

Srivastava, Deepak↗
NASA NTRS1977

Electrically-nonlinear composite material

Low-temperature sinter of semiconductor and polymer resin is useful in manufacture of circuit boards, cables, and electroexplosive devices. Material can absorb large amounts of heat and can withstand repeated exposures to electrostatic discharges with little deteriorating effects. These characteristics offer significant advantages over high-temperature-sintered, metal-oxide semiconducting materials.

Menichelli, V. J.↗