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At least 19 records

Low-Power Absorption Saturation in Semiconductor Metasurfaces

Saturable optical elements lie at the cornerstone of many modern optical systems. Regularly patterned quasi-planar nanostructures—metasurfaces—are known to facilitate nonlinear optical processes. Such subwavelength semiconductor nanostructures can potentially serve as saturable components. In this work, we report on the intensity-dependent reflectance of femtosecond laser pulses from semiconductor metasurfaces with Mie-type modes, caused by the absorption saturation. Moreover, arrays of GaAs nanocylinders with magnetic dipole resonances in the spectral vicinity of the GaAs bandgap demonstrate a reduced saturation intensity and increased self-modulation efficiency, an order of magnitude higher than bulk GaAs or unstructured GaAs films. By contrast, the reflection modulation is shown to be negligible in the CW regime for the same average intensities, indicating that the process is not the result of temperature effects. Our work provides a novel idea for low-power saturable elements based on nonthermal nature of saturation. We conclude by devising a high-quality metasurface that can be used, in theory, to further reduce the saturation fluence below 50 nJ/cm 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Manipulation of quantum dot emission with semiconductor metasurfaces exhibiting magnetic quadrupole resonances

Optical metasurfaces were suggested as a route for engineering advanced light sources with tailored emission properties. In particular, they provide a control over the emission directionality, which is essential for single-photon sources and LED applications. Here, we experimentally study light emission from a metasurface composed of III-V semiconductor Mie-resonant nanocylinders with integrated quantum dots (QDs). Specifically, we focus on the manipulation of the directionality of spontaneous emission from the QDs due to excitation of different magnetic quadrupole resonances in the nanocylinders. To this end, we perform both back focal plane imaging and momentum-resolved spectroscopy measurements of the emission. This allows for a comprehensive analysis of the effect of the different resonant nanocylinder modes on the emission characteristics of the metasurface. Our results show that the emission directionality can be manipulated by an interplay of the excited quadrupolar nanocylinder modes with the metasurface lattice modes and provide important insights for the design of novel smart light sources and new display concepts.

Vaskin, Aleksandr↗

Beam combining of high-power terahertz lasers with semiconductor metasurface gratings

Spectral beam combining (SBC) of an array of single-mode lasers has the potential for realizing a chip-scale electrically tunable multispectral laser source without any moving parts and with emission at closely spaced discrete frequencies. Here, we demonstrate SBC of an array of single-mode THz quantum-cascade lasers (QCLs) with small frequency spacing. Semiconductor-based metasurface THz blazed gratings are developed for integration with QCLs in a compact cryocooler setup. Single-lobed beams of four QCLs emitting around 3.2 THz and spectrally separated by ~14 GHz are combined to achieve collinear propagation of spatially overlapped and collimated beams in the far field with ≲ 0.1° of pointing error. Peak optical power in the range 50–100 mW is detected from each of the QCLs after combining. The dense frequency spacing in our method provides a pathway to incorporate tens of QCLs on a chip to realize a high-power discretely tunable THz laser source for applications in THz spectroscopy.

Jia, Fei [Lehigh Univ., Bethlehem, PA (United Stat↗

Ultrafast all-optical diffraction switching using semiconductor metasurfaces

Ultrafast all-optical switching using Mie resonant metasurfaces requires both on-demand tunability of the wavefront of the light and ultrafast time response. However, devising a switching mechanism that has a high contrast between its “on” and “off” states without compromising speed is challenging. Here, we report the design of a tunable Mie resonant metasurface that achieves this behavior. Our approach utilizes a diffractive array of semiconductor resonators that support both dipolar and quadrupolar Mie resonances. By balancing the strengths of the dipole and quadrupole resonances, we can suppress radiation into the first diffraction order, thus creating a clearly delineated “off”-state at the operating wavelength. Then, we use optical injection of free- carriers to spectrally shift the multipoles and rebalance the multipole strengths, thereby enabling radiation into the diffraction order—all on an ultrafast timescale. We demonstrate ultrafast off-to-on switching with I on /I off ≈ 5 modulation of the diffracted intensity and ultrafast on-to-off switching with Ion/Ioff ≈ 9 modulation. Furthermore, both switches exhibit a fast τ tr ≈ 2.7 ps relaxation time at 215 μJ cm -2 pump fluence. Further, we show that for higher fluences, the temporal response of the metasurface is governed by thermo-optic effects. This combination of multipole engineering with lattice diffraction opens design pathways for tunable metasurface-based integrated devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Metasurface-enhanced photochemical activity in visible light absorbing semiconductors

Heterogeneous photocatalysis is an important research problem relevant to a variety of sustainable energy technologies. However, obtaining high photocatalytic efficiency from visible light absorbing semiconductors is challenging due to a combination of weak absorption, transport losses, and low activity. Aspects of this problem have been addressed by multilayer approaches, which provide a general scheme for engineering surface reactivity and stability independent of electronic considerations. However, an analogous broad framework for optimizing light–matter interactions has not yet been demonstrated. Here, we establish a photonic approach using semiconductor metasurfaces that is highly effective in enhancing the photocatalytic activity of GaAs, a high-performance semiconductor with a near-infrared bandgap. Our engineered pillar arrays with heights of ∼150 nm exhibit Mie resonances near 700 nm that result in near-unity absorption and exhibit a field profile that maximizes charge carrier generation near the solid–liquid interface, enabling short transport distances. Our hybrid metasurface photoanodes facilitate oxygen evolution and exhibit enhanced incident photon-to-current efficiencies that are ∼22× larger than a corresponding thin film for resonant excitation and 3× larger for white light illumination. Key to these improvements is the preferential generation of photogenerated carriers near the semiconductor interface that results from the field enhancement profile of magnetic dipolar-type modes.

Chemistry↗

Perfect absorption in GaAs metasurfaces near the bandgap edge

Perfect optical absorption occurs in a metasurface that supports two degenerate and critically-coupled modes of opposite symmetry. The challenge in designing a perfectly absorbing metasurface for a desired wavelength and material stems from the fact that satisfying these conditions requires multi-dimensional optimization often with parameters affecting optical resonances in non-trivial ways. This problem comes to the fore in semiconductor metasurfaces operating near the bandgap wavelength, where intrinsic material absorption varies significantly. Here we devise and demonstrate a systematic process by which one can achieve perfect absorption in GaAs metasurfaces for a desired wavelength at different levels of intrinsic material absorption, eliminating the need for trial and error in the design process. Using this method, we show that perfect absorption can be achieved not only at wavelengths where GaAs exhibits high absorption, but also at wavelengths near the bandgap edge. In this region, absorption is enhanced by over one order of magnitude compared a layer of unstructured GaAs of the same thickness.

Hale, L. L. (ORCID:0000000176544272)↗

Trapping light in air with membrane metasurfaces for vibrational strong coupling

Optical metasurfaces can manipulate electromagnetic waves in unprecedented ways at ultra-thin engineered interfaces. Specifically, in the mid-infrared (mid-IR) region, metasurfaces have enabled numerous biochemical sensing, spectroscopy, and vibrational strong coupling (VSC) applications via enhanced light-matter interactions in resonant cavities. However, mid-IR metasurfaces are usually fabricated on solid supporting substrates, which degrade resonance quality factors (Q) and hinder efficient sample access to the near-field electromagnetic hotspots. Besides, typical IR-transparent substrate materials with low refractive indices, such as CaF 2 , NaCl, KBr, and ZnSe, are usually either water-soluble, expensive, or not compatible with low-cost mass manufacturing processes. Here, we present novel free-standing Si-membrane mid-IR metasurfaces with strong light-trapping capabilities in accessible air voids. We employ the Brillouin zone folding technique to excite tunable, high-Q quasi-bound states in the continuum (qBIC) resonances with our highest measured Q-factor of 722. Leveraging the strong field localizations in accessible air cavities, we demonstrate VSC with multiple quantities of PMMA molecules and the qBIC modes at various detuning frequencies. Our new approach of fabricating mid-IR metasurfaces into semiconductor membranes enables scalable manufacturing of mid-IR photonic devices and provides exciting opportunities for quantum-coherent light-matter interactions, biochemical sensing, and polaritonic chemistry. The authors introduce a mid-IR metasurface fabricated by decorating a free-standing Si-membrane with air holes. The enhanced light-matter interactions in such air cavities enable vibrational strong coupling and advanced biochemical sensing.

infrared spectroscopy↗

Experimental Evidence of the Lorentz-like Effective Medium Resonance in Semiconductor Hyperbolic Metamaterials using Strong Coupling to Plasmonic Metasurfaces

The Lorentz-like effective medium resonance (LEMR) exhibited by the longitudinal effective permittivity of semiconductor hyperbolic metamaterials (SHMs) has been known for some time. However, direct observation of this resonance proved to be difficult. Here we experimentally demonstrate its existence by strongly coupling SHMs to plasmonic metasurfaces. We consider four strong coupling implementations of SHMs that exhibit different LEMR absorption profiles (both in frequency and strength) to validate our approach.

42 ENGINEERING↗

Physics‐Informed Machine Learning for Inverse Design of Optical Metamaterials

Optical metamaterials manipulate light through various confinement and scattering processes, offering unique advantages like high performance, small form factor and easy integration with semiconductor devices. However, designing metasurfaces with suitable optical responses for complex metamaterial systems remains challenging due to the exponentially growing computation cost and the ill‐posed nature of inverse problems. To expedite the computation for the inverse design of metasurfaces, a physics‐informed deep learning (DL) framework is used. A tandem DL architecture with physics‐based learning is used to select designs that are scientifically consistent, have low error in design prediction, and accurate reconstruction of optical responses. The authors focus on the inverse design of a representative plasmonic device and consider the prediction of design for the optical response of a single wavelength incident or a spectrum of wavelength in the visible light range. The physics‐based constraint is derived from solving the electromagnetic wave equations for a simplified homogenized model. The model converges with an accuracy up to 97% for inverse design prediction with the optical response for the visible light spectrum as input, and up to 96% for optical response of single wavelength of light as input, with optical response reconstruction accuracy of 99%.

Sarkar, Sulagna↗

Rapidly tunable, narrow-band infrared filter arrays

Tunable filters can use Fano metasurface designs having extremely narrow transmission bands. The Fano metasurface can comprise dielectric or semiconductor materials and can produce transmission bands with quality factors well in excess of 1000—at least a factor of 50 greater than typical metamaterial-based infrared resonances. Numerical simulations of these metasurfaces show that the spectral position of the passband can be changed by slightly changing the position of a small dielectric perturbation block placed within the near-field of the resonator by using simple electromechanical actuation architectures that allow for such motion. An array of independently tunable narrowband infrared filters can thereby be fabricated that only requires deep-subwavelength motions of perturbing objects in the resonator's near-field.

Sinclair, Michael B.↗