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Results for “semiconductor spin devices magnetic fields structural inversion asymmetry bulk”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

resonant tunneling↗

InAs/GaSb/AlSb resonant tunneling spin device concepts

We discuss device concepts for creating spin polarized current sources without external magnetic fields, using nonmagnetic 6.1 A semiconductor resonant tunneling structures.

spin filter spin pump resonant tunneling bulk inve↗