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The operation of a new type of tunable laser, where the two separately controlled individual lasers are placed vertically in parallel, has been demonstrated. One of the cavities ('control' cavity) is operated below threshold and assists the longitudinal mode selection and tuning of the other laser. With a minor modification, the same device can operate as an independent two-wavelength laser source.
Recent developments in low loss single mode optical fiber waveguides, semiconductor waveguide lasers and waveguide optical and electro-optical components have made a new class of rotational inertial frame references possible. The subclasses of possible fiber waveguide gyro configurations are discussed and one approach which is under development is reviewed. Signal detection and processing, error sources, expected physical and performance characteristics, and present development status are discussed.
Ribbon waveguides made of alumina or of semiconductors (Si, InP, or GaAs) have been proposed as low-loss transmission lines for coupling electronic components and circuits that operate at frequencies from 30 to 1,000 GHz. In addition to low losses (and a concomitant ability to withstand power levels higher than would otherwise be possible), the proposed ribbon waveguides would offer the advantage of compatibility with the materials and structures now commonly incorporated into integrated circuits. Heretofore, low-loss transmission lines for this frequency range have been unknown, making it necessary to resort to designs that, variously, place circuits and components to be coupled in proximity of each other and/or provide for coupling via free space through bulky and often lossy optical elements. Even chip-to-chip interconnections have been problematic in this frequency range. Metal wave-guiding structures (e.g., microstriplines and traditional waveguides) are not suitable for this frequency range because the skin depths of electromagnetic waves in this frequency range are so small as to give rise to high losses. Conventional rod-type dielectric waveguide structures are also not suitable for this frequency range because dielectric materials, including ones that exhibit ultralow losses at lower frequencies, exhibit significant losses in this frequency range. Unlike microstripline structures or metallic waveguides, the proposed ribbon waveguides would be free of metal and would therefore not be subject to skin-depth losses. Moreover, although they would be made of materials that are moderately lossy in the frequency range of interest, the proposed ribbon waveguides would cause the propagating electromagnetic waves to configure themselves in a manner that minimizes losses.
A semiconductor waveguide isolator consisting of a hollow column of a semiconductor mounted coaxially is considered in a circular waveguide in a longitudinal dc magnetic field. An elementary and physical analysis based on the excitation of plane waves in the guide and a more rigorous mode matching analysis are presented. These theoretical predictions are compared with experimental results for an InSb isolator at 94GHz and 75 K.
The properties of semiconductor-clad optical waveguides based on glass substrates were investigated. Computer modeling studies on four-layer silicon-clad planar dielectric waveguides indicated that the attenuation and mode index should behave as exponentially damped sinusoids as the silicon thickness is decreased below one micrometer. This effect can be explained as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high refractive index silicon. The computer studies also show that both the attenuation and mode index of the propagating mode are significantly altered by conductivity charges in the silicon. Silicon claddings were RF sputtered onto AgNO3-NaNO3 ion exchanged waveguides and preliminary measurements of attenuation were made. An expression was developed which predicts the attenuation of the silicon clad waveguide from the attenuation and phase characteristics of a silicon waveguide. Several applications of these clad waveguides are suggested and methods for increasing the photo response of the RF sputtered silicon films are described.
A semiconductor optical integrated circuit for wave division multiplexing has a semiconductor waveguide layer, a succession of diffraction grating points in the waveguide layer along a predetermined diffraction grating contour, a semiconductor diode array in the waveguide layer having plural optical ports facing the succession of diffraction grating points along a first direction, respective semiconductor diodes in the array corresponding to respective ones of a predetermined succession of wavelengths, an optical fiber having one end thereof terminated at the waveguide layer, the one end of the optical fiber facing the succession of diffraction grating points along a second direction, wherein the diffraction grating points are spatially distributed along the predetermined contour in such a manner that the succession of diffraction grating points diffracts light of respective ones of the succession of wavelengths between the one end of the optical fiber and corresponding ones of the optical ports.
The device considered in this study is a semiconductor waveguide isolator consisting of a hollow column of a semiconductor mounted coaxially in a circular waveguide in a longitudinal dc magnetic field. An elementary and physical analysis based on the excitation of plane waves in the guide and a more rigorous mode-matching analysis (MMA) are presented. These theoretical predictions are compared with experimental results for an InSb isolator at 94 GHz and 75 K.
A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.
The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch-modulation (using a detuned central section to prevent intensity peaking in the center of the cavity) is currently under investigation to achieve the required performance goals.
Glass waveguides are studied because of the ease and economy of fabricating devices in glass. All calculations are based on the assumption of a glass guide and substrate, but the effects being studied will occur on other materials if the proper refractive indices are used in the calculations.
Utilization of anisotropic effects in semiconductor plasmas for development of millimeter wavelength isolators
Results of experiments designed to demonstrate spectrally selective absorption in dielectric waveguides on semiconductor substrates are reported. These experiments were conducted with three waveguides formed by sputtering films of PSK2 glass onto silicon-oxide layers grown on silicon substrates. The three waveguide samples were studied at 633 and 532 nm. The samples differed only in the thickness of the silicon-oxide layer, specifically 256 nm, 506 nm, and 740 nm. Agreement between theoretical predictions and measurements of propagation constants (mode angles) of the six or seven modes supported by these samples was excellent. However, the loss measurements were inconclusive because of high scattering losses in the structures fabricated (in excess of 10 dB/cm). Theoretical calculations indicated that the power distribution among all the modes supported by these structures will reach its steady state value after a propagation length of only 1 mm. Accordingly, the measured loss rates were found to be almost independent of which mode was initially excited. The excellent agreement between theory and experiment leads to the conclusion that low loss waveguides confirm the predicted loss rates.
Polarized EM wave propagation and microwave Faraday rotation in solid state plasma in circular waveguide under strong magnetic field
An analytical model is presented for the coupling coefficient for two gain-guided coupled waveguides, e.g., semiconductor laser arrays. A common parabolic gain distribution is assumed for the lasers, and the effective dielectric constant distribution is approximated in terms of the bulk refraction index, wavelength, power filling factor, and the antiguiding factor. The fundamental mode is then formulated and used in an integral for the coupling coefficient. The dependence of the coefficient of various waveguide parameters is described.
Topics covered include: Fastener Starter; Multifunctional Deployment Hinges Rigidified by Ultraviolet; Temperature-Controlled Clamping and Releasing Mechanism; Long-Range Emergency Preemption of Traffic Lights; High-Efficiency Microwave Power Amplifier; Improvements of ModalMax High-Fidelity Piezoelectric Audio Device; Alumina or Semiconductor Ribbon Waveguides at 30 to 1,000 GHz; HEMT Frequency Doubler with Output at 300 GHz; Single-Chip FPGA Azimuth Pre-Filter for SAR; Autonomous Navigation by a Mobile Robot; Software Would Largely Automate Design of Kalman Filter; Predicting Flows of Rarefied Gases; Centralized Planning for Multiple Exploratory Robots; Electronic Router; Piezo-Operated Shutter Mechanism Moves 1.5 cm; Two SMA-Actuated Miniature Mechanisms; Vortobots; Ultrasonic/Sonic Jackhammer; Removing Pathogens Using Nano-Ceramic-Fiber Filters; Satellite-Derived Management Zones; Digital Equivalent Data System for XRF Labeling of Objects; Identifying Objects via Encased X-Ray-Fluorescent Materials - the Bar Code Inside; Vacuum Attachment for XRF Scanner; Simultaneous Conoscopic Holography and Raman Spectroscopy; Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP; Vibrating Optical Fibers to Make Laser Speckle Disappear; Adaptive Filtering Using Recurrent Neural Networks; and Applying Standard Interfaces to a Process-Control Language.
The mixer consists of a small metallic wafer, in which are embedded the semiconductor diodes, the waveguide mount is used to couple the diode wafer to the signal circuit, an RF tuning element, and a 3 mm coaxial connector for the IF output terminal. The cross-sectional dimension is that of the waveguide flange (19 mm x 19 mm, 0.75" x 0.75"), the overall length is nominally 25 mm (1.0 inch). This component is to be used as a single-ended RF mixer with four replacement mixer diodes, operating in the three millimeter wavelength band.
By changing the thickness of a semiconductor cladding layer deposited on a planar dielectric waveguide, the TE or TM propagating modes may be selectively attenuated. This polarization effect is due to the periodic coupling between the lossless propagating modes of the dielectric slab waveguide and the lossy modes of the cladding layer. Experimental tests involving silicon claddings show high selectivity for either polarization.
Millimeter wave semiconductor isolator using circular waveguide with coaxial n-type InSb in longitudinal magnetic field