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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Light-induced anomalous Hall conductivity in the massive three-dimensional Dirac semimetal Co 3 ⁢Sn 2 ⁢S 2

Weyl semimetals can emerge from Dirac semimetals when the time-reversal or spatial-inversion symmetries are broken. Recently, it has been proposed based on Floquet theory that Dirac semimetals can be converted into Weyl semimetals even by shining circularly polarized light (CPL). Here we have investigated the possibility of such a Dirac-Weyl conversion by measuring the CPL-induced anomalous Hall conductivity (AHC) in a massive 3D Dirac semimetal Co 3 ⁢Sn 2 ⁢S 2 in the paramagnetic phase using ultrafast midinfrared pump-terahertz Faraday rotation probe spectroscopy. We find that the field-strength and driving frequency dependence of the observed AHC is well accounted for by CPL-induced nonzero Berry curvature associated with the splitting of the Dirac bands as predicted by the Floquet theory. As a result, the estimated splitting of the Dirac bands reaches about 60% of the mass gap and the calculated CPL-induced AHC quantitatively reproduces the experimental observation, demonstrating a promising route toward the realization of Floquet-Weyl states from massive Dirac semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Geometric transport signatures of strained multi-Weyl semimetals

The minimal coupling of strain to Dirac and Weyl semimetals, and its modeling as a pseudogauge field has been extensively studied, resulting in several proposed topological transport signatures. In this work, we study the effects of strain on higher winding number Weyl semimetals and show that strain is not a pseudogauge field for any winding number larger than one. Here we focus on the double-Weyl semimetal as an illustrative example to show that the application of strain splits the higher winding number Weyl nodes and produces an anisotropic Fermi surface. Specifically, the Fermi surface of the double-Weyl semimetal acquires nematic order. By extending chiral kinetic theory for such nematic fields, we determine the effective gauge fields acting on the system and show how strain induces anisotropy and affects the geometry of the semiclassical phase space of the double-Weyl semimetal. Further, the strain-induced deformation of the Weyl nodes results in transport signatures related to the covariant coupling of the strain tensor to the geometric tensor associated with the Weyl nodes giving rise to strain-dependent dissipative corrections to the longitudinal as well as the Hall conductance. Thus, by extension, we show that in multi-Weyl semimetals, strain produces geometric signatures rather than topological signatures. Further, we highlight that the most general way to view strain is as a symmetry-breaking field rather than a pseudogauge field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Nernst power factor and figure of merit in the compensated semimetal ScSb

Recently, topological semimetals have emerged as strong candidates for solid-state thermomagnetic refrigerators due to their enhanced Nernst effect. This enhancement arises from the combined contributions of the Berry-curvature-induced anomalous Nernst coefficient associated with topological bands and the normal Nernst effect resulting from synergistic electron-hole compensation. Generally, these two effects are intertwined in topological semimetals, making it challenging to evaluate them independently. Here, we report the observation of a high Nernst effect in the electron-hole compensated semimetal ScSb with topologically trivial electronic band structures. Remarkably, we find a high maximum Nernst power factor of 𝑃⁢𝐹 𝑁 ∼ 35 × 10 −4 W m −1 K −2 in ScSb. The Nernst thermopower (𝑆 𝑥⁢𝑦 ) exhibits a peak of ∼ 47 µ⁢V/K at 12 K and 14 T, yielding a Nernst figure of merit (𝑧 𝑁 ) of ∼ 28 × 10 −4 K −1 . Notably, despite its trivial electronic band structure, both the 𝑃⁢𝐹 𝑁 and 𝑧 𝑁 values of ScSb are comparable to those observed in topological semimetals with Dirac band dispersions. In conclusion, the origin of the large Nernst signal in ScSb is explained by compensated electron and hole carriers, through Hall resistivity measurements, angle-resolved photoemission spectroscopy, and density functional theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Large electron-phonon drag asymmetry and reverse heat flow in the topological semimetal θ-TaN

A broad range of unusual transport behaviors have been discovered in topological semimetals. However, to date, the effect on the thermopower from intrinsic momentum exchange between electrons and phonons has received little attention. Here we report that huge electron-phonon drag enhancements of the thermopower of the to- pological semimetal, θ-phase tantalum nitride (θ-TaN), can occur that persist even up to room temperature. Our first principles calculations also identify a surprising asymmetry in which the large drag-enhanced thermopowers found slightly above the material’s chemical potential disappear just below it. The large thermopower en- hancements result from anomalous drag contributions from high frequency acoustic phonons with unusually small decay rates. The apparent vanishing drag results from (i) the emergence of an exceptionally high electrical conductivity promoted by the steep linear electronic dispersions extending below one of the topological nodal points; (ii) a remarkable cancellation in which momentum transferred from a charge current creates oppositely directed phonon heat currents of nearly equal magnitude, thereby masking the drag contributions. This extraordinary transport behavior is a consequence of an unusual interplay between intrinsic electron and phonon material properties in θ-TaN. Overall, our work gives new insights into the fundamental physical properties of coupled electron-phonon systems and motivates further exploration of drag effects in semimetals.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation

The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Tutorial: Defects in topological semimetals

Three-dimensional topological semimetals are a class of electronic materials in which their bulk and surface states contain linear band touching nodes near the Fermi level. Like semiconductors, their properties will be affected by point and extended defects in their crystal structures, although the extent to which defects and disorders influence topological semimetals may differ in key ways due to their unique electronic structures. In this Tutorial, we provide an overview of the defects in topological semimetals, covering both computational and experimental methods for exploring defect-property relationships. We also include a discussion on open questions that still need to be explored further.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Robust and symmetric magnetic field dependency of superconducting diode effect in asymmetric Dirac semimetal SQUIDs

The recent demonstration of the superconducting diode effect (SDE) has generated renewed interest in superconducting electronics, in which devices such as compact superconducting diodes that can perform signal rectification with low-energy operations are needed. In this article, we present our results of robust and symmetric-in-magnetic-field SDE in asymmetric superconducting quantum interference devices (SQUIDs) realized in high-quality Dirac semimetal Cd 3 As 2 thin film grown by the molecular beam epitaxy technique. Consistent with previous work, a zero magnetic field SDE is observed. Furthermore, the difference in switching current is independent of the strength and polarity of an out-plane magnetic field in the range of −10 and 10 mT. We speculate that this robust symmetric-in-field SDE in our Dirac semimetal SQUIDs is due to the formation of helical spin texture, theoretically predicted in Dirac semimetals.

Current-voltage characteristic↗
DOE OSTI2025

Disordered Weyl semimetal as an array of coupled Hubbard chains

We demonstrate that a disordered magnetic Weyl semimetal may be mapped onto a two-dimensional array of coupled replicated Hubbard chains, where the Hubbard 𝑈 is directly related to the variance of the disorder potential. This is a three-dimensional generalization of a similar mapping of the two-dimensional quantum Hall plateau transition to a one-dimensional Hubbard chain. Here, we demonstrate that this mapping leads to the conclusion that the Weyl semimetal becomes a diffusive metal with a nonzero density of states at arbitrarily weak disorder, in agreement with recent work. We also discuss the absence of localization in strongly disordered Weyl semimetals from the viewpoint of this mapping.

Mott insulators↗
DOE OSTI2026

Toward Tunable Magnetic Dirac Semimetals: Mn Doping of Cd 3 As 2

Magnetic impurities provide a route toward increasing functionality in electronic materials, often enabling new device concepts and architectures. In the case of topological semimetals, dilute magnetic doping presents a particularly attractive approach for inducing a Dirac to Weyl phase change via time reversal symmetry breaking. However, efforts to realize changes in the electronic structure have been limited by challenges in incorporating magnetic impurities into crystals with sufficiently high electron mobilities to detect them via transport or spectroscopic techniques. Here, we demonstrate incorporation of Mn into Cd 3 ⁢As 2 Dirac semimetal thin films grown by molecular beam epitaxy (MBE). Using As-rich growth conditions and [001] oriented thin films, Mn compositions of >10% are achieved. Films contain uniform distributions of Mn with no evidence of secondary phases and exhibit electron mobilities greater than 10 000–30 000 cm 2 /Vs up to 5% Mn. An evolution in the magnetization behavior along with the emergence of a second quantum oscillation frequency at low Mn concentrations provide preliminary evidence of Mn-induced changes in the electronic structure that are consistent with a Weyl phase. This work demonstrates the potential of magnetically doping topological semimetal thin films and a pathway for synthesizing them.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quantum-Confined Lifshitz Transition on Weyl Semimetal T d -MoTe 2

Adsorption of alkali atoms onto material surfaces is widely utilized for controlling electronic properties and is particularly effective for two-dimensional materials. While tuning the chemical potential and band gap and creating quantum-confined states are well established for alkali adsorption on semiconductors, the effects on semimetallic systems remain largely elusive. Here, utilizing angle-resolved photoemission spectroscopy measurements and density functional theory calculations, we disclose the creation of two-dimensional electron gas and the quantum-confined Lifshitz transition at the surface of a Weyl semimetal T d -MoTe 2 by potassium adsorption. Electrons from potassium adatoms are shown to be transferred mainly to the lowest unoccupied band within the gapped part of the Brillouin zone, which, in turn, induces strong surface band bending and quantum confinement in the topmost layer. The quantum-confined topmost layer evolves from a semimetal to a strong metal with a Lifshitz transition departing substantially from the bulk band. The present finding and its underlying mechanism can be exploited for the creation of electronic heterojunctions in van der Waals semimetals.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electronic structures and pseudogap nature of the strongly correlated Kondo semimetals and insulators CeNiSn and CeRhX(X=As, Sb)

Employing temperature (T)-dependent angle-resolved photoemission spectroscopy (ARPES) near the Ce 4d absorption edge, we have investigated the electronic structures of the strongly correlated Kondo insulators (KIs) and/or Kondo semimetals of CeNiSn and CeRhX (X=As, Sb), which also belong to potential topological KIs (TKIs). Good agreement is found between the Fermi surfaces (FSs) measured at the Ce 4d→4f on resonance and those calculated and unfolded into the Ce-only Brillouin zone, supporting the crucial Ce 4f contribution to the Fermi-edge states in them. While the FSs of CeRhSb and CeNiSn are similar to each other, they are quite different from those of CeRhAs, which is understood to originate from the semimetallic Kondo ground states of CeNiSn and CeRhSb in contrast to the insulating Kondo ground state of CeRhAs. T-dependent ARPES demonstrates the existence of the Kondo resonance above the Fermi level (EF) and its T-driven decoherence in CeNiSn and CeRhSb, and the existence of the Ce 4f Kondo-like peak well below EF with a pseudogap in CeRhAs. With increasing T, the tail of the Kondo resonance in CeNiSn and CeRhSb loses its coherence, whereas the Ce 4f Kondo-like peak in CeRhAs persists up to T≥200 K. The Kondo temperatures (TKs) are estimated via the analysis of T-dependent ARPES, yielding TK≈80 K (CeNiSn), TK≈180 K (CeRhSb), and TK≫200 K (CeRhAs). High-resolution, low-T ARPES confirms the Kondo resonance just above EF in CeNiSn and CeRhSb Kondo semimetals and the KI ground state of CeRhAs with a pseudogap of Δ≈30 meV, demonstrating the importance of the coherent Kondo states in determining their potential topological properties. The differences in the T-dependent ARPES of CeNiSn and CeRhSb suggest the weaker f-c hybridization in CeNiSn than in CeRhSb (c: conduction electron), which is likely due to the more localized Ni 3d orbitals than the delocalized Rh 4d orbitals. The differences between the T-dependent ARPES of CeNiSn/CeRhSb Kondo semimetals and those of CeRhAs Kondo insulator are likely due to the smaller volume of CeRhAs than those of CeNiSn/CeRhSb.

Kang, J-S↗
DOE OSTI2024

Anisotropic weak antilocalization in thin films of the Weyl semimetal TaAs

Device applications of topological semimetals await the development of epitaxial films in the ultrathin limit. Weak antilocalization (WAL) has been extensively utilized in the understanding of surface states in topological insulators and shows promise for use in elucidating the properties of thin film topological semimetals. Here, we report insights from WAL in the surface state and interface transport properties of our recently synthesized single-crystal-like thin films of the Weyl semimetal TaAs(001) grown on GaAs(001). We observe robust, anisotropic WAL in the magnetoconductance from 2 to 20 K in films from 10 to 200 nm thick. We link the anisotropic WAL magnetoconductance to anisotropic mobility stemming from film topography. We conclude that WAL in the films likely originates from the antilocalization of topological surface states. The WAL magnetoconductance is impacted by the film thickness and topography, solidifying the useful role of WAL in the study of topological semimetal/semiconductor heterointerfaces. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Resonant inelastic x-ray scattering in the topological semimetal FeSi

The energy spectrum of topological semimetals contains protected degeneracies in reciprocal space that correspond to Weyl, Dirac, or multifold fermionic states. To exploit the unconventional properties of these states, one has to access the electronic structure of the three-dimensional bulk. In this paper, we present a joint theory-experiment study of the electronic structure of a candidate topological semimetal with resonant inelastic x-ray scattering (RIXS). We resolve the bulk electronic states of FeSi using momentum-dependent RIXS at the Fe L 3 edge. We observe a broad excitation continuum devoid of sharp features, consistent with particle-hole scattering in an underlying electronic band structure. Using density functional theory (DFT), we calculate the electronic structure of FeSi and derive a band theory formulation of RIXS in the fast collision approximation to model the scattering process with zero adjustable parameters. While band theory predicts an excitation continuum with broad spectral features similar to the observed ones, discrepancies between theory and experiment suggest the presence of low-energy processes that DFT alone does not account for. Further, this study of RIXS in a topological semimetal shows that RIXS is a useful tool for revealing unanticipated behavior of bulk electronic states in this class of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magnetothermopower of Nodal-Line Semimetals

The search for materials with large thermopower is of great practical interest. Dirac and Weyl semimetals have recently proven to exhibit superior thermoelectric properties, particularly when subjected to a quantizing magnetic field. Here, we consider whether a similar enhancement arises in nodal-line semimetals, for which the conduction and valence band meet at a line or ring in momentum space. We compute the Seebeck and Nernst coefficients for arbitrary temperature and magnetic field and we find a wealth of different scaling regimes. Most strikingly, when a sufficiently strong magnetic field is applied along the direction of a straight nodal line or in the plane of a nodal ring, the large degeneracy of states leads to a large linear-in- B thermopower that is temperature independent even at low temperatures. Our results suggest that nodal-line semimetals may offer significant opportunity for efficient low-temperature thermoelectrics. Published by the American Physical Society 2024

Chakraborty, Poulomi (ORCID:0000000213969473)↗
DOE OSTI2025

Epitaxial columnar growth of strain-free antiferromagnetic Weyl semimetal Mn 3 Sn on wurtzite c -plane GaN/Al 2 O 3 (0001)

Weyl semimetal thin films with excellent crystalline quality are of great interest for antiferromagnetic spintronics. Mn 3 Sn is one Weyl semimetal with great properties and promise for exciting science and applications. It has proven very challenging, however, to grow Mn 3 Sn thin films with smooth surfaces, negligible strain, and excellent crystallinity. In this work, we discuss the successful preparation of epitaxial Mn 3 Sn (0001)-oriented thin films via molecular beam epitaxial growth on c -plane wurtzite GaN which was grown by MBE on Al 2 O 3 (0001). We present the reflection high energy electron diffraction analysis along with x-ray diffraction in order to demonstrate the crystalline quality of the film, and we give atomic models to explain the epitaxial orientation relationships between the crystal lattices of the substrate, GaN layer, and Mn 3 Sn layer. Importantly, we discuss the film lattice parameters as compared to expected values, demonstrating negligible strain both in-plane and out-of-plane . Atomic force microscopy reveals an epitaxial columnar growth mode characterized by flat-top-mesa islands, while scanning tunneling microscopy shows the atomically smooth surfaces of the mesa-top structures. Finally, Rutherford backscattering informs the stoichiometry of the film as well as the layer thicknesses.

Chiral antiferromagnetic material↗
DOE OSTI2025

Tuning Chiral Anomaly Signature in a Dirac Semimetal via Fast-Ion Implantation

Cd 3 As 2 is a Dirac semimetal that hosts a chiral anomaly, functioning as a platform to realize energy applications. We use fast-ion implantation to enhance the negative longitudinal magnetoresistance (NLMR)─signature of a chiral anomaly─in Nb-doped Cd 3 As 2 thin films. High-energy ion implantation is used to investigate semiconductors and nuclear materials but is rarely employed to study topological materials. We use electrical transport and transmission electron microscopy to characterize the NLMR and crystallinity of Nb-doped Cd 3 As 2 . We find surface-doped thin films display a maximum NLMR around B = 7 T and bulk-doped thin films display a maximum over B = 9 T─all while maintaining crystallinity. This is more than a 100% relative enhancement of the maximum NLMR compared to pristine Cd 3 As 2 . As a result, our work demonstrates the potential of high-energy ion implantation as a practical route to explore chiralitronic properties in topological semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Refining the two-band model for highly compensated semimetals using thermoelectric coefficients

In studying compensated semimetals, the two-band model has proven extremely useful in capturing electrical conductivity under magnetic field, as a function of density and mobility of electronlike and holelike carriers. However, it rarely offers practical insight into magnetothermoelectric properties. Here, in this work, we report the field dependence of thermoelectric (TE) coefficients in a highly compensated semimetal NbSb 2 , where we find the Seebeck (𝑆 𝑥⁢𝑥 ) and Nernst (𝑆 𝑥⁢𝑦 ) coefficients increase quadratically and linearly with applied magnetic field, respectively. Such field dependence was predicted in previous work that studied a system of two parabolic bands, within semiclassical Boltzmann transport theory when the following two conditions are simultaneously met: 𝜔 𝑐 ⁢𝜏 ≫ 1 and tan ⁡𝜃 𝐻 ≪ 1, where 𝜔 𝑐 and 𝜏 refer to the cyclotron frequency and relaxation time, respectively, and 𝜃 𝐻 is the Hall angle. Under these conditions, we find the field dependence of the TE coefficients directly provides a relation between the electronlike (𝑛 𝑒 ) and holelike (𝑛 ℎ ) carrier densities, which in turn can be used to refine two-band model fitting. With this, we find the compensation factor ($\frac{|Δ⁢𝑛|}{𝑛_{𝑒}}$, where Δ⁢𝑛 = 𝑛 𝑒 −𝑛 ℎ ) of NbSb 2 is two orders of magnitude smaller than what was found in unrestricted fitting, resulting in a larger saturation-field scale for magnetoresistance. Within the same framework of the semiclassical theory, we also deduce that the thermoelectric Hall angle tan⁡ 𝜃 𝛾 = $\frac{𝑆_{𝑥⁢𝑦}}{𝑆_{𝑥⁢𝑥}}$ can be expressed as ($\frac{Δ⁢𝑛}{𝑛_{𝑒}}$ ×𝜔 𝑐 ⁢𝜏) −1 , which serves as a parameter to predict the degree of compensation. Our findings offer crucial insights into identifying empirical conditions for field-induced enhancement of TE performance and into engineering-efficient thermoelectric devices based on semimetallic materials.

electrical conductivity↗
DOE OSTI2025

Evolution of magnetoresistance in the magnetic topological semimetals NdS⁢b 𝑥⁢ T⁢e 2−𝑥

Magnetic topological semimetals 𝐿𝑛⁢SbTe (𝐿𝑛=lanthanide elements) provide a platform to study the interplay of structure, magnetism, topology, and electron correlations. Varying Sb and Te compositions in 𝐿⁢𝑛⁢S⁢b 𝑥 ⁢T⁢e 2−𝑥 can effectively control the electronic, magnetic, and transport properties. Here, we report the evolution of transport properties with Sb and Te contents in NdS⁢b 𝑥 ⁢T⁢e 2−𝑥 , (0<𝑥<1). Our work reveals nonmonotonic evolution in magnetoresistance with varying composition stoichiometry. Specifically, reducing Sb content 𝑥 leads to strong negative magnetoresistance up to 99.9%. Such a strong magnetoresistance, which is likely attributed to the interplay between structure, magnetism, and electronic bands, establishes this material as a promising platform for investigating topological semimetal for future device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗