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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1986

The role of oxygen in porous molybdenum electrodes for the alkali metal thermoelectric converter

A model for chemical reactions in porous molybdenum electrodes is presented which is based on thermochemical and kinetic data, known sodium-molybdenum-oxygen chemistry, X-ray diffraction analysis of molybdenum and molybdenum oxide electrodes, and the electrochemical behavior of the cell. Enhanced sodium transport through the electrode in its optimum performance state is found to be due to the high sodium ion conductivity of molten Na2MoO4 in the pores, and the electrical conduction to the molybdenum matrix by Na2Mo3O6. The decline of electrode performance is shown to be due to a combination of loss mechanisms for the Na-Mo-O compounds including reduction at short circuit, disproportionation of Na2Mo3O6 at open circuit, and the evaporation of Na2MoO4 at elevated temperature. It is suggested that operation of the cell at moderate voltage of about 0.5 V corresponding to maximum power may be a more stable condition for the porous electrode than open-circuit stand or short-circuit, where degradation reactions are heightened.

Williams, R. M.↗

NASA NTRS1991

Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protons

Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.

Abdulaziz, Salman S.↗

NASA NTRS2007

Reliability Effects of Surge Current Testing of Solid Tantalum Capacitors

Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation breakdown model [1-3]; electrical oscillations in circuits with a relatively high inductance [4-6]; local overheating of the cathode [5,7, 8]; mechanical damage to tantalum pentoxide dielectric caused by the impact of MnO2 crystals [2,9, 10]; or stress-induced-generation of electron traps caused by electromagnetic forces developed during current spikes [11]. A commonly accepted explanation of the surge current failures is that at unlimited current supply during surge current conditions, the self-healing mechanism in tantalum capacitors does not work, and what would be a minor scintillation spike if the current were limited, becomes a catastrophic failure of the part [l, 12]. However, our data show that the scintillation breakdown voltages are significantly greater that the surge current breakdown voltages, so it is still not clear why the part, which has no scintillations, would fail at the same voltage during surge current testing (SCT).

Teverovsky, Alexander↗

NASA NTRS2008

NASA Tech Briefs, December 2008

Topics covered include: Crew Activity Analyzer; Distributing Data to Hand-Held Devices in a Wireless Network; Reducing Surface Clutter in Cloud Profiling Radar Data; MODIS Atmospheric Data Handler; Multibeam Altimeter Navigation Update Using Faceted Shape Model; Spaceborne Hybrid-FPGA System for Processing FTIR Data; FPGA Coprocessor for Accelerated Classification of Images; SiC JFET Transistor Circuit Model for Extreme Temperature Range; TDR Using Autocorrelation and Varying-Duration Pulses; Update on Development of SiC Multi-Chip Power Modules; Radio Ranging System for Guidance of Approaching Spacecraft; Electromagnetically Clean Solar Arrays; Improved Short-Circuit Protection for Power Cells in Series; Electromagnetically Clean Solar Arrays; Logic Gates Made of N-Channel JFETs and Epitaxial Resistors; Improved Short-Circuit Protection for Power Cells in Series; Communication Limits Due to Photon-Detector Jitter; System for Removing Pollutants from Incinerator Exhaust; Sealing and External Sterilization of a Sample Container; Converting EOS Data from HDF-EOS to netCDF; HDF-EOS 2 and HDF-EOS 5 Compatibility Library; HDF-EOS Web Server; HDF-EOS 5 Validator; XML DTD and Schemas for HDF-EOS; Converting from XML to HDF-EOS; Simulating Attitudes and Trajectories of Multiple Spacecraft; Specialized Color Function for Display of Signed Data; Delivering Alert Messages to Members of a Work Force; Delivering Images for Mars Rover Science Planning; Oxide Fiber Cathode Materials for Rechargeable Lithium Cells; Electrocatalytic Reduction of Carbon Dioxide to Methane; Heterogeneous Superconducting Low-Noise Sensing Coils; Progress toward Making Epoxy/Carbon-Nanotube Composites; Predicting Properties of Unidirectional-Nanofiber Composites; Deployable Crew Quarters; Nonventing, Regenerable, Lightweight Heat Absorber; Miniature High-Force, Long-Stroke SMA Linear Actuators; "Bootstrap" Configuration for Multistage Pulse-Tube Coolers; Reducing Liquid Loss during Ullage Venting in Microgravity; Ka-Band Transponder for Deep-Space Radio Science; Replication of Space-Shuttle Computers in FPGAs and ASICs; Demisable Reaction-Wheel Assembly; Spatial and Temporal Low-Dimensional Models for Fluid Flow; Advanced Land Imager Assessment System; Range Imaging without Moving Parts.

Source record↗

NASA NTRS2003

New Active Optical Technique Developed for Measuring Low-Earth-Orbit Atomic Oxygen Erosion of Polymers

Polymers such as polyimide Kapton (DuPont) and Teflon FEP (DuPont, fluorinated ethylene propylene) are commonly used spacecraft materials because of desirable properties such as flexibility, low density, and in the case of FEP, a low solar absorptance and high thermal emittance. Polymers on the exterior of spacecraft in the low-Earth-orbit (LEO) environment are exposed to energetic atomic oxygen. Atomic oxygen reaction with polymers causes erosion, which is a threat to spacecraft performance and durability. It is, therefore, important to understand the atomic oxygen erosion yield E (the volume loss per incident oxygen atom) of polymers being considered in spacecraft design. The most common technique for determining E is a passive technique based on mass-loss measurements of samples exposed to LEO atomic oxygen during a space flight experiment. There are certain disadvantages to this technique. First, because it is passive, data are not obtained until after the flight is completed. Also, obtaining the preflight and postflight mass measurements is complicated by the fact that many polymers absorb water and, therefore, the mass change due to water absorption can affect the E data. This is particularly true for experiments that receive low atomic oxygen exposures or for samples that have a very low E. An active atomic oxygen erosion technique based on optical measurements has been developed that has certain advantages over the mass-loss technique. This in situ technique can simultaneously provide the erosion yield data on orbit and the atomic oxygen exposure fluence, which is needed for erosion yield determination. In the optical technique, either sunlight or artificial light can be used to measure the erosion of semitransparent or opaque polymers as a result of atomic oxygen attack. The technique is simple and adaptable to a rather wide range of polymers, providing that they have a sufficiently high optical absorption coefficient. If one covers a photodiode with a uniformly thick sheet of semitransparent polymer such as Kapton H polyimide, then as atomic oxygen erodes the polymer, the short-circuit current from the photodiode will increase in an exponential manner with fluence. This nonlinear response with fluence results in a lack of sensitivity for measuring low atomic oxygen fluences. However, if one uses a variable-thickness polymer or carbon sample, which is configured as shown in the preceding figure, then a linear response can be achieved for opaque materials using a parabolic well for a circular geometry detector or a V-shaped well for a rectangular-geometry detector. Variable-thickness samples can be fabricated using many thin polymer layers. For semitransparent polymers such as Kapton H polyimide, there is an initial short-circuit current that is greater than zero. This current has a slightly nonlinear dependence on atomic oxygen fluence in comparison to opaque materials such as black Kapton as shown in the graph. For this graph figure, the total thickness of Kapton H was assumed to be 0.03 cm. The photodiode short-circuit current shown in the graph was generated on the basis of preliminary measurements-a total reflectance rho of 0.0424 and an optical absorption coefficient a of 146.5 cm(sup -1). In addition to obtaining on-orbit data, the advantage of this active erosion and erosion yield measurement technique is its simplicity and reliance upon well-characterized fluence witness materials as well as a nearly linear photodiode short-circuit current dependence upon atomic oxygen fluence. The optical technique is useful for measuring either atomic oxygen fluence or erosion, depending on the information desired. To measure the atomic oxygen erosion yield of a test material, one would need to have two photodiode sensors, one for the test material and one that uses a known erosion yield material (such as Kapton) to measure the atomic oxygen fluence.

Banks, Bruce A.↗