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Shape tuning of large area silicon nanotip arrays through reactive ion etching

Nanostructures formed in silicon form an important class of structures that span a broad spectrum of application areas. Of these, columnar structures of silicon featuring tiplike apexes have their own niche applications. Here, the ability to afford shape tunability for these structures further enhances their application potential. In this paper, we present our findings on the large area fabrication of silicon nanotips defined through microsphere lithography and shape tuned through a combination of different reactive ion etching (RIE) techniques. The self-sharpening mechanism of the tips when using nonplanar etch masks (microspheres) under anisotropic etching conditions is elucidated. We further show that depending on the manner of etching (continuous versus discrete multistep etch), identical anisotropic etching recipes produce vastly different tip morphologies. Hourglass-shaped silicon tips were obtained when silicon was subjected to anisotropic followed by isotropic etching conditions. Sharp silicon tips with tip apex radii on the order of 2 nm have been successfully realized when the RIE shape tuned tips were subjected to a series of oxidative sharpening steps.

74 ATOMIC AND MOLECULAR PHYSICS↗

A compact electron source for the dielectric laser accelerator

In this work, we design and demonstrate a compact electron source that combines an integrated silicon nanotip photoemitter with a compact silicon-based electrostatic lens. The lens simultaneously accelerates electrons to 30 keV and focuses the resulting beam to a 0.4 μm (RMS) beam diameter with 62 pm-rad normalized emittance at a distance of 20 mm from the cathode. The compact nature of this lens provides a compelling source for dielectric laser accelerator (DLA) beamlines, ultrafast electron diffraction, or ultrafast electron microscopy. Driven by a 220 fs, 1960 nm pulsed laser beam, electron currents up to 28 electrons/pulse at 100 kHz are demonstrated. The electron bunch length is 540 ± 50 fs for photocurrents of <1 electron/pulse, increasing to 700 ± 80 fs for 28 electrons/pulse, as measured by cross correlation with a 220 fs pulsed laser beam. The maximum 5D peak brightness is measured to be 6.8 × 10 13 A/(m 2 rad 2 ) at 28 electrons/pulse. These results represent a significant step toward developing practical benchtop-sized linear accelerators based on DLA technology or compact ultrafast electron microscopy and diffraction applications.

47 OTHER INSTRUMENTATION↗

Near-field terahertz nonlinear optics with blue light

Abstract The coupling of terahertz optical techniques to scattering-type scanning near-field microscopy (s-SNOM) has recently emerged as a valuable new paradigm for probing the properties of semiconductors and other materials on the nanoscale. Researchers have demonstrated a family of related techniques, including terahertz nanoscopy (elastic scattering, based on linear optics), time-resolved methods, and nanoscale terahertz emission spectroscopy. However, as with nearly all examples of s-SNOM since the technique’s inception in the mid-1990s, the wavelength of the optical source coupled to the near-field tip is long, usually at energies of 2.5 eV or less. Challenges in coupling of shorter wavelengths (i.e., blue light) to the nanotip has greatly inhibited the study of nanoscale phenomena in wide bandgap materials such as Si and GaN. Here, we describe the first experimental demonstration of s-SNOM using blue light. With femtosecond pulses at 410 nm, we generate terahertz pulses directly from bulk silicon, spatially resolved with nanoscale resolution, and show that these signals provide spectroscopic information that cannot be obtained using near-infrared excitation. We develop a new theoretical framework to account for this nonlinear interaction, which enables accurate extraction of material parameters. This work establishes a new realm of possibilities for the study of technologically relevant wide-bandgap materials using s-SNOM methods.

47 OTHER INSTRUMENTATION↗