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Toward 1% single-photon anharmonicity with periodically poled lithium niobate microring resonators
The absence of the single-photon nonlinearity has been a major roadblock in developing quantum photonic circuits at optical frequencies. In this paper, we demonstrate a periodically poled thin film lithium niobate microring resonator (PPLNMR) that reaches 5,000,000%/W second-harmonic conversion efficiency—almost 20-fold enhancement over the state-of-the-art—by accessing its largest χ <#comment/> ( 2 ) tensor component d 33 via quasi-phase matching. The corresponding single-photon coupling rate g / 2 π <#comment/> is estimated to be 1.2 MHz, which is an important milestone as it approaches the dissipation rate κ <#comment/> / 2 π <#comment/> of best-available lithium niobate microresonators developed in the community. Using a figure of merit defined as g / κ <#comment/> , our device reaches a single-photon nonlinear anharmonicity approaching 1%. We show that, by further scaling of the device, it is possible to improve the single-photon anharmonicity to a regime where photon blockade effect can be manifested.
Utilizing Ultraviolet Photons to Generate Single-Photon Emitters in Semiconductor Monolayers
The understanding and controlled creation of atomic defects in semiconductor transition metal dichalcogenides (TMDs) are highly relevant to their applications in high-performance quantum optics and nanoelectronic devices. Here, we demonstrate a versatile approach in generating single-photon emitters in MoS 2 monolayers using widely attainable UV light. We discover that only defects engendered by UV photons in vacuum exhibit single-photon-emitter characteristics, whereas those created in air lack quantum emission attributes. In combination with theoretical calculations, we assign the defects generated in vacuum to unpassivated sulfur vacancies, whose highly localized midgap states give rise to single-photon emission. In contrast, UV irradiation of the MoS 2 monolayers in air results in oxygen-passivated sulfur vacancies, whose optical properties are likely governed by their pristine band-to-defect band optical transitions. Furthermore, these findings suggest that widely available light sources such as UV light can be utilized for creating quantum photon sources in TMDs.
A quantum trajectory picture of single photon absorption and energy transport in photosystem II
Here, we use quantum trajectory theory to study the dynamics of the first step in photosynthesis for a single photon interacting with photosystem II (PSII). By considering individual trajectories we are able to look beyond the ensemble average dynamics to compute the PSII system evolution conditioned upon individual photon counting measurements. Measurements of the transmitted photon beam strongly affects the system state, since detection of an outgoing photon confirms that the PSII must be in the electronic ground state, while a null measurement implies it is in an excited electronic state. We show that under ideal conditions, observing the null result transforms a state with a low excited state population to a state with nearly all population contained in the excited states. We study the PSII dynamics conditioned on such photon counting for both a pure excitonic model of PSII and a more realistic model with exciton-phonon coupling to a dissipative phononic environment. In the absence of such coupling, we show that the measured fluorescence rates show oscillations constituting a photon-counting witness of excitonic coherence. Excitonic coupling to the phonon environment has a strong effect on the observed rates of fluorescence, damping the oscillations. Addition of non-radiative decay and incoherent transitions to radical pair states in the reaction center to the phononic model allows extraction of a quantum efficiency of 92.5% from the long-time evolution, consistent with bulk experimental measurements.
CASPI: collaborative photon processing for active single-photon imaging
Image sensors capable of capturing individual photons have made tremendous progress in recent years. However, this technology faces a major limitation. Because they capture scene information at the individual photon level, the raw data is sparse and noisy. Here we propose CASPI: Collaborative Photon Processing for Active Single-Photon Imaging, a technology-agnostic, application-agnostic, and training-free photon processing pipeline for emerging high-resolution single-photon cameras. By collaboratively exploiting both local and non-local correlations in the spatio-temporal photon data cubes, CASPI estimates scene properties reliably even under very challenging lighting conditions. We demonstrate the versatility of CASPI with two applications: LiDAR imaging over a wide range of photon flux levels, from a sub-photon to high ambient regimes, and live-cell autofluorescence FLIM in low photon count regimes. We envision CASPI as a basic building block of general-purpose photon processing units that will be implemented on-chip in future single-photon cameras.
Characterization of High Speed Optical and Magnetic Interactions in Superconducting Nanowire Single Photon Detectors
Single-photon detectors are essential tools for quantum photonics. The ideal single photon detector would exhibit a quantum efficiency (QE) of 100% (i.e. no false negatives), zero dark photon counts per second (i.e. no false positives), zero dead time (i.e. the detector is capable of detecting one photon immediately after another), and zero jitter (i.e. the electrical signal produced by the detector perfectly reproduces the timing of the input photon signal). Commercially available avalanche photodiodes (APDs) have generally performed reasonably well for visible wavelengths but they perform poorly at longer wavelengths. For wavelengths spanning the near- ultraviolet (UV) to the mid- infrared (IR), superconducting nanowire single photon detectors (SNSPDs) can exhibit quantum efficiencies exceeding 90% with dark count rates and timing jitter roughly an order of magnitude less than is typically seen in APDs. While SNSPDSs are now commercially available from several small businesses, fundamental questions about the nature of photon interactions with superconducting nanostructures remain.
Entangled Photon Correlations Allow a Continuous-Wave Laser Diode to Measure Single-Photon, Time-Resolved Fluorescence
Fluorescence lifetime experiments are a standard approach for measuring excited state dynamics and local environment effects. Here, we show that entangled photon pairs produced from a continuous-wave (CW) laser diode can replicate pulsed laser experiments without phase modulation. As a proof of principle, picosecond fluorescence lifetimes of indocyanine green are measured in multiple environments. Here, the use of entangled photons has three unique advantages. First, low power CW laser diodes and entangled photon source design lead to straightforward on-chip integration for a direct path to distributable fluorescence lifetime measurements. Second, the entangled pair wavelength is easily tuned by temperature or electric field, allowing a single source to cover octave bandwidths. Third, femtosecond temporal resolutions can be reached without requiring major advances in source technology or external phase modulation. Entangled photons could therefore provide increased accessibility to time-resolved fluorescence while also opening new scientific avenues in photosensitive and inherently quantum systems.
Quantum defects in carbon nanotubes as single-photon sources
Single-photon emitters are essential components of emerging quantum technologies, including secure communication and quantum computing. Single-walled carbon nanotubes (SWCNTs) have emerged as a promising platform for quantum light sources due to their quasi-one-dimensional excitonic host structure and compatibility with telecom photonic systems. Recent advances in deterministic defect engineering—most notably the development of organic color centers (OCCs)—have enabled stable, chemically controllable, and spectrally tunable single-photon emission. OCC-based emitters have demonstrated single-photon purity exceeding 99% and, more recently, room-temperature photon indistinguishability, placing them among the few solid-state systems with quantum-grade performance under ambient conditions. This review surveys progress in the field from three complementary perspectives: chemical synthesis and quantum defect engineering, computational studies of structure-property relationships and excitonic behavior, and experimental investigations of quantum optical properties. We also discuss alternative approaches, including air-suspended SWCNTs and hybrid van der Waals heterostructures, highlighting opportunities and open challenges for scalable integration into quantum photonic platforms.
Ab initio evaluation of the electronic and optical properties of V B C B defect in wurtzite boron nitride as promising single-photon emitter
Single-photon emitters (SPEs) in the near-infrared (NIR) range with sharp and intense zero-phonon lines (ZPLs) of emission are critical for quantum communications. Certain local defects in wide-bandgap semiconductors create isolated occupied and unoccupied states within the bandgap of the host semiconductor and thus exhibit sharp ZPLs of emission. We designed and studied a defect in the wurtzite boron nitride as a potential SPE. It consists of a boron vacancy and a carbon atom substituting another boron atom (V B C B defect). The density of states is obtained within the GW method to identify favorable local defect states that may dominate optical transitions. The dielectric function and oscillator strength of the V B C B defect are obtained using the Bethe-Salpeter equation method to identify the optical excitations of the V B C B defect, from which we conclude that the defect could be a source of NIR emission with a narrow bright ZPL peak, thus an efficient SPE.
Fast data-driven spectrometer with direct measurement of time and frequency for multiple single photons
We present a single-photon-sensitive spectrometer based on a linear array of 512 single-photon avalanche diode detectors with 0.04 nm spectral and 40 ps temporal resolutions. We employ a fast data-driven operation that allows direct measurement of time and frequency for simultaneous single photons, time- and frequency-stamping each single-photon detection. Our results combine excellent temporal and spectral resolution. This work opens numerous applications in quantum photonics, especially when both spectral and temporal properties of single photons can be exploited.
Waveform analysis of a large-area superconducting nanowire single photon detector
Superconducting nanowire single photon detectors (SNSPDs) are typically used as single-mode-fiber-coupled single-pixel detectors, but large area detectors are increasingly critical for applications ranging from microscopy to free-space quantum communications. However, the long meander-line length of such large-area SNSPDs results in a proportionately large kinetic inductance that affects the waveform generated by the device. Here, we explore changes in the rising edge of the readout pulse for a single-pixel large-area SNSPD as a function of the optical spot size on the detector and compare to the rising edge of the dark-count waveform. We observe a bimodal distribution of bright-count rise times and show that the probability of a slow rise time increases in the limit of large spot sizes, indicative of a position sensitive response. Additionally, in the limit of low bias currents, the dark-count readout pulse is most similar to the large spot-size bright-count readout pulse, which suggests that dark counts arise from locations spanning the device. Overall, these results are consistent with a simple model of traveling microwave modes excited by single photons incident at varying positions along the length of the nanowire.
Solution-Processed Ultrafast, Room-Temperature Single-Photon Source at 1550 nm
Single photons are cornerstones of quantum technologies. The need for an ultrafast, bright, and stable photon source emitting in the telecom-band at ∼1550 nm, ideally operating at room temperature, has resulted in a decades-long quest. However, to date, telecom sources are hampered by inherently long radiative lifetimes that severely limit brightness and speed, material instability, or the need for cryogenic operation. Here, in this study, stable colloidal PbS/CdS quantum dots emitting at 1550 nm (C-band) or 1350 nm (O-band) are embedded in a solution-synthesized nanoparticle-on-mirror cavity. Single cavity-coupled quantum dots experience extreme Purcell factors up to 10,700, resulting in ultrafast emission lifetimes of 65 ps, along with near-complete blinking suppression. As a result, 12 million single photons are emitted per second affording a single photon source at 1550 nm that is more than two orders of magnitude brighter than previously possible at room-temperature. These telecom-band single photon sources are solution-processable and lithography-free and may leverage mature colloidal fabrication technologies for future quantum applications.
Room-temperature single-photon emitters in silicon nitride
Single-photon emitters are essential in enabling several emerging applications in quantum information technology, quantum sensing, and quantum communication. Scalable photonic platforms capable of hosting intrinsic or embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. Photophysical analysis reveals bright (>10 5 counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with a second-order autocorrelation function value at zero time delay g (2) (0) below 0.2 at room temperature. We suggest that the emission originates from a specific defect center in SiN because of the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in SiN have the potential to enable direct, scalable, and low-loss integration of quantum light sources with a well-established photonic on-chip platform.
Autonomous generation of single photon emitting materials
Single photon quantum materials discovery based on large dataset synthetic data generation.
Radiation-Induced Dark Counts for Silicon Single-Photon Detectors in Space
Single-photon detectors operating on satellites for use in a quantum communications network can incur large dark-count-rate increases from the natural radiation environment of space. Displacement damage to the material lattice of a detector from the ionizing radiation can result in a permanent dark-count increase in the detector. In this work, we analyze the radiation-induced dark-count rate of a silicon single-photon avalanche diode onboard a satellite at different orbiting altitudes, as well as, the additional radiation from a nuclear-disturbed environment caused by a high-altitude nuclear explosion. For detectors on low Earth orbit satellites, protons are the biggest source of radiation damage and are best mitigated by choosing an orbit that minimizes exposure when passing through the South Atlantic Anomaly and Polar Cusps. Detectors on medium Earth orbit and geostationary orbit satellites, if shielded by more than 10 mm of aluminum, provide the best platform in terms of the least amount of radiation damage to the detectors. In the event of a high-altitude nuclear explosion, the artificial radiation belts produced by the explosion will cause too much damage to silicon single-photon detectors on low Earth orbit satellites and render them unfit for quantum communications in less than a day. Higher orbit satellites will only suffer minor dark-count-rate increases from the artificial radiation belts.
Development of Single Photon Sources in GaN
The recent discovery of bright, room-temperature, single photon emitters in GaN leads to an appealing alternative to diamond best single photon emitters given the widespread use and technological maturity of III-nitrides for optoelectronics (e.g. blue LEDs, lasers) and high-speed, high-power electronics. This discovery opens the door to on-chip and on-demand single photon sources integrated with detectors and electronics. Currently, little is known about the underlying defect structure nor is there a sense of how such an emitter might be controllably created. A detailed understanding of the origin of the SPEs in GaN and a path to deterministically introduce them is required. In this project, we develop new experimental capabilities to then investigate single photon emission from GaN nanowires and both GAN and AlN wafers. We ion implant our wafers with the ion implanted with our focused ion beam nanoimplantation capabilities at Sandia, to go beyond typical broad beam implantation and create single photon emitting defects with nanometer precision. We've created light emitting sources using Li + and He + , but single photon emission has yet to be demonstrated. In parallel, we calculate the energy levels of defects and transition metal substitutions in GaN to gain a better understanding of the sources of single photon emission in GaN and AlN. The combined experimental and theoretical capabilities developed throughout this project will enable further investigation into the origins of single photon emission from defects in GaN, AlN, and other wide bandgap semiconductors.
Improved Heralded Single-Photon Source with a Photon-Number-Resolving Superconducting Nanowire Detector
Deterministic generation of single photons is essential for many quantum information technologies. A bulk optical nonlinearity emitting a photon pair, where the measurement of one of the photons heralds the presence of the other, is commonly used with the caveat that the single-photon emission rate is constrained due to a trade-off between multiphoton events and pair emission rate. Using an efficient and low noise photon-number-resolving superconducting nanowire detector we herald, in real time, a single photon at telecommunication wavelength. We perform a second-order photon correlation g 2 ( 0 ) measurement of the signal mode conditioned on the measured photon number of the idler mode for various pump powers and demonstrate an improvement of a heralded single-photon source. We develop an analytical model using a phase-space formalism that encompasses all multiphoton effects and relevant imperfections, such as loss and multiple Schmidt modes. We perform a maximum-likelihood fit to test the agreement of the model to the data and extract the best-fit mean photon number μ of the pair source for each pump power. A maximum reduction of 0.118 ± 0.012 in the photon g 2 ( 0 ) correlation function at μ = 0.327 ± 0.007 is obtained, indicating a strong suppression of multiphoton emissions. For a fixed g 2 ( 0 ) = 7 × 10 − 3 , we increase the single pair generation probability by 25%. Our experiment, built using fiber-coupled and off-the-shelf components, delineates a path to engineering ideal sources of single photons.
Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared
Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel $1 mm^2$ superconducting microwire single photon detectors (SMSPDs) with $1\,\mathrm{\mu m}$-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all 8 pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity published to date, and the first report of an SMSPD array. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with $cm^2$-scale active area and beyond.