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Results for “single-crystal method”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Low-cost single-crystal turbine blades, volume 2

The overall objectives of Project 3 were to develop the exothermic casting process to produce uncooled single-crystal (SC) HP turbine blades in MAR-M 247 and higher strength derivative alloys and to validate the materials process and components through extensive mechanical property testing, rig testing, and 200 hours of endurance engine testing. These Program objectives were achieved. The exothermic casting process was successfully developed into a low-cost nonproperietary method for producing single-crystal castings. Single-crystal MAR-M 247 and two derivatives DS alloys developed during this project, NASAIR 100 and SC Alloy 3, were fully characterized through mechanical property testing. SC MAR-M 247 shows no significant improvement in strength over directionally solidified (DS) MAR-M 247, but the derivative alloys, NASAIR 100 and Alloy 3, show significant tensile and fatigue improvements. Firtree testing, holography, and strain-gauge rig testing were used to determine the effects of the anisotropic characteristics of single-crystal materials. No undesirable characteristics were found. In general, the single-crystal material behaved similarly to DS MAR-M 247. Two complete engine sets of SC HP turbine blades were cast using the exothermic casting process and fully machined. These blades were successfully engine-tested.

Strangman, T. E.↗
NASA NTRS1986

High-Quality, Thin-Film Germanium Single Crystals

Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.

Outlaw, R. A.↗
NASA NTRS1974

The two-dimensional tunnel structures of K3Sb5O14 and K2Sb4O11

The structures of K3Sb5O14 and K2Sb4O11 have been solved by the single-crystal X-ray direct method and the heavy-atom method, respectively. The structure of K3Sb5O14 is orthorhombic, with space group Pbam and cell parameters a = 24.247 (4), b = 7.157 (2), c = 7.334 (2) A, Z = 4. The structure of K2Sb4O11 is monoclinic, with space group C2/m and cell parameters a = 19.473 (4), b = 7.542 (1), c = 7.198 (1) A, beta = 94.82 (2) deg, Z = 4. A full-matrix least-squares refinement gave R = 0.072 and R = 0.067, respectively. In both structures, oxygen atoms form an octahedron around each Sb atom and an irregular polyhedron around each K atom. By sharing corners and edges, the octahedra form a skeleton network having intersecting b-axis and c-axis tunnels. The K(+) ions, which have more than ten oxygen near neighbors, are located in these tunnels. Evidence for K(+)-ion transport within and between tunnels comes from ion exchange of the alkali ions in molten salts and anisotropic temperature factors that are anomalously large in the direction of the tunnels.

Hong, H. Y.-P.↗
NASA NTRS1984

Growing Single-Crystal Sheets by Controlled Cooling

Immersed heating and cooling elements establish desired temperature gradients. Method envisions use of high-pressure, Czochralski crystalgrowth apparatus as presently employed to grow gallium arsenide and gallium phosphide but modified to accept deep crucibles so deep layers of encapsulant used, plus X-ray or optical or sonic-imaging system to observe growth of crystal submerged in encapsulant. Method especially applicable to horizontal growth of ribbons of compound semiconductors.

Morrison, A. D.↗
NASA NTRS1975

Aluminum under high pressure. I - Equation of state

A curve of applied pressure versus lattice constant is calculated for single-crystal aluminum. It results from an application of the method of structural expansions for deriving the energies of simple metals, a method known to give reasonable results for the elastic constants even at second order in the effective electron-ion interaction. The latter is taken from Fermi-surface analysis, and it is verified that the extant face-centered cubic structure remains the preferred crystalline phase up to the highest pressures considered. Arguments are given to suggest that the curve should have reasonable a priori accuracy and can admit possible improvement if experimental data in the intermediate-pressure region can be provided to refine the (in principle) energy-dependent pseudopotential. At three megabars, the lattice constant is reduced by only 22 per cent; the ion cores at this pressure are still very well separated.

Friedli, C.↗
NASA NTRS1979

Transformation pressure of ZnS by a new primary pressure technique

An experiment designed to measure the transformation pressure of zinc sulfide by a primary pressure method using an indentor-anvil system made of single-crystal diamond is discussed. A nonsorting electrode-grid which can be applied directly to the anvil using optical lithography is described, together with the procedures used for positioning.

Ruoff, A. L.↗
NASA NTRS1985

Stress rate and proof-testing of silicon wafers

Fracture mechanics test methods were applied to evaluate the proof-test characteristics of single-crystal silicon wafers. The results indicate that the strength distribution of silicon wafers is truncated by proof-testing. No subcritical crack growth occurred during proof-loading, as inferred from the lack of a stress-rate effect on strength. Mechanical proof-testing appears to be an effective method for eliminating weak samples before cell processing.

Chen, C. P.↗
NASA NTRS1983

Low-cost single-crystal turbine blades, volume 1

The exothermic casting process was successfully developed into a low cost nonproprietary method for producing single crystal (SC) castings. Casting yields were lower than expected, on the order of 20 percent, but it is felt that the casting yield could be significantly improved with minor modifications to the process. Single crystal Mar-M 247 and two derivative SC alloys were developed. NASAIR 100 and SC Alloy 3 were fully characterized through mechanical property testing. SC Mar-M 247 shows no significant improvement in strength over directionally solidified (DS) Mar-M 247, but the derivative alloys, NASAIR 100 and Alloy 3, show significant tensile and fatigue improvements. The 1000 hr/238 MPa (20 ksi) stress rupture capability compared to DS Mar-M 247 was improved over 28 C. Firtree testing, holography, and strain gauge rig testing were used to evaluate the effects of the anisotropic characteristics of single crystal materials. In general, the single crystal material behaved similarly to DS Mar-M 247. Two complete engine sets of SC HP turbine blades were cast using the exothermic casting process and fully machined.

Strangman, T. E.↗
NASA NTRS1969

Improved method of dicing integrated circuit wafers into chips

Method employing a pressure chamber is used for dicing semiconductor single-crystal wafers, containing integrated circuits, into small chips along pre-scribed lines. Uniform bending of the scribed wafer over the convex surface of a perforated hemisphere, breaks it cleanly into individual chips without damaging the circuits.

Litant, I.↗
NASA NTRS1986

Crack growth in single-crystal silicon

Crack growth in single-crystal silicon at room temperature in air was evaluated by double torsion (DT) load-relaxation method and monitored by acoustic emission (AE) technique. Both DT and AE methods indicated lack of subcritical crack growth in silicon. At the critical stress intensity factor, the crack front was found to be jumping several times in a 'mirror' region and then followed by fast crack growth in a 'hackle' region. Hackle marks were found to be associated with plastic deformation at the tip of the fast moving crack. No dislocation etch pits were found in the 'mirror' region, in which crack growth may result from interatomic bonds broken at the crack tip under stress without any plastic deformation. Acoustic emission appears to be spontaneously generated from both interatomic bonds broken and dislocation generation at the moving crack tip during the crack growth in single-crystal silicon.

Chen, C. P.↗
NASA NTRS1985

Cyclic Structural Analyses of SSME Turbine Blades

The problems of calculating the structural response of high-temperature space propulsion components such as turbine blades for the fuel turbopump are addressed. The first high-pressure-stage fuel turbine blade (HPFTB) in the liquid-hydrogen turbopump of the space shuttle main engine (SSME) was selected for this study. In the past these blades have cracked in the blade shank region and at the airfoil leading edge adjacent to the platform. To achieve the necessary durability, these blades are currently being cast by using directional solidification. Single-crystal alloys are also being investigated for future SSME applications. The study evaluated the utility of advanced structural analysis methods in assessing the low-cycle fatigue lives of these anisotropic components. The turbine blade airfoil of the high-pressure stage of the SSME fuel turbopump was analyzed because it has a history of rapid crack initiation.

Kaufman, A.↗
NASA NTRS1980

Titanium dioxide antireflection coating for silicon solar cells by spray deposition

A high-speed production process is described for depositing a single-layer, quarter-wavelength thick antireflection coating of titanium dioxide on metal-patterned single-crystal silicon solar cells for terrestrial applications. Controlled atomization spraying of an organotitanium solution was selected as the most cost-effective method of film deposition using commercial automated equipment. The optimal composition consists of titanium isopropoxide as the titanium source, n-butyl acetate as the diluent solvent, sec-butanol as the leveling agent, and 2-ethyl-1-hexanol to render the material uniformly depositable. Application of the process to the coating of circular, large-diameter solar cells with either screen-printed silver metallization or with vacuum-evaporated Ti/Pd/Ag metallization showed increases of over 40% in the electrical conversion efficiency. Optical characteristics, corrosion resistance, and several other important properties of the spray-deposited film are reported. Experimental evidence indicates a wide tolerance in the coating thickness upon the overall efficiency of the cell. Considerations pertaining to the optimization of AR coatings in general are discussed, and a comprehensive critical survey of the literature is presented.

Kern, W.↗
NASA NTRS1975

Optical absorption components of light-modulated absorption spectrum of CdS

The amplitude and decay coefficient of light-induced modulation of absorption (LIMA) was measured as a function of wavelength from 535 to 850 nm for single-crystal CdS. The decay coefficient exhibited a discontinuous resonance at 710 nm which was due to the overlap and cancellation of two opposing absorption changes. A method was developed to separate these opposing absorption changes using the measured decay coefficients. The discrete-level-to-band energy for one absorption change was found to be 1.64 eV. An improved model was developed which contains two associated levels in the band gap separated by 0.32 eV.

Conway, E. J.↗
NASA NTRS1974

Sticking probabilities for the adsorption of hydrogen on clean Ni/111/, Ni/100/, Ni sheet and evaporated Ni films

Determination of the sticking probability for hydrogen adsorption on clean Ni(111), Ni(100), polycrystalline nickel sheet, and polycrystalline evaporated nickel films, using a modification of the reflection detector technique of Horgan and King (1970) for metal films. The initial sticking probability for hydrogen adsorption on a nickel film at 300 K by the proposed method is found to be 0.25 in comparison to 0.35 for hydrogen adsorption on a nickel film using the reflection detector technique. Also, the sticking probabilities on smooth single-crystal (111) and (100) planes and polycrystalline sheets are found to be lower than those on the rougher polycrystalline nickel films.

Horgan, A. M.↗
NASA NTRS1986

Crack Growth in Single-Crystal Silicon

Report describes experiments on crack growth in single-crystal silicon at room temperature in air. Crack growth in (111) cleavage plane of wafers, 50 by 100 by 0.76 mm in dimension, cut from Czochralski singlecrystal silicon studied by double-torsion load-relaxation method and by acoustic-emission measurements. Scanning electron microscopy and X-ray topography also employed. Results aid in design and fabrication of silicon photovoltaic and microelectronic devices.

Chen, C. P.↗
NASA NTRS1975

Relative cooling rates of mare basalts at the Apollo 12 and 15 sites as estimated from pyroxene exsolution data

X-ray single-crystal diffraction studies, supplemented by electron microprobe analyses of core pigeonites and rim augites from rocks 12031, 15085, 15475, and 15495, have been used to suggest cooling rates for these and other Apollo 12 and 15 rocks studied by similar methods. The extent of subsolidus phase separation of pyroxenes is used as a measure of the cooling rate. The results were interpreted in terms of model cooling histories of a lava flow whose thickness was estimated from the absolute cooling rates obtained by cooling rate experiments and by temperature-time variation through an extrusive flow computed by employing simplified theory of Jaeger. All available data on the exsolution and cation distributions of pyroxenes from Apollo 12 and 15 samples at present are consistent with the hypothesis that these rocks were derived from the top and interior of lava flows with thicknesses of 4-10 m. A process for exsolution of augite from a host pigeonite on (100) has been related to its low-calcium content.

Takeda, H.↗
NASA NTRS1985

Potential productivity benefits of float-zone versus Czochralski crystal growth

Efficient mass production of single-crystal silicon is necessary for the efficient silicon solar arrays needed in the coming decade. However, it is anticipated that there will be difficulty growing such volumes of crystals using conventional Czochralski (Cz) methods. While the productivity of single crystals might increase with a crystal diameter increase, there are two obstacles to the mass production of large diameter Czochralski crystals, the long production cycle due to slow growth rate and the high heat requirements of the furnaces. Also counterproductive would be the large resistivity gradient along the growth direction of the crystals due to impurity concentration. Comparison between Float zone (FZ) and Cz crystal growth on the basis of a crystal 150 mm in diameter is on an order of two to four times in favor of the FZ method. This advantage results from high growth rates and steady-state growth while maintaining a dislocation-free condition and impurity segregation.

Abe, T.↗