Research for the improvement of silicon solar cell efficiency
Solar cell design curves for collection efficiency
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Solar cell design curves for collection efficiency
The efficiency of a solar cell depends on the material parameters appearing in the set of differential equations that describe the transport, recombination, and generation of electrons and holes. This paper describes the many basic mechanisms occurring in semiconductors that can control these material parameters.
Research and development on silicon solar cell with improved efficiency
The maximum efficiency of silicon solar cells was calculated and yielded a value near 18%. Additionally, the performance of these high efficiency cells in a synchronous orbit radiation field was calculated and it is suggested that these cells would be superior to present silicon cells. The performance of conventional cells was analyzed and several areas in which performance gains may be achieved are discussed. These areas include improvements in diffused region profile, in reduction of excess forward currents in cells made from low resistivity material, and in the theory for describing complex solar cell structures.
The maximum efficiency of silicon solar cells is calculated and yields a value near 18%. Additionally, the performance of these high efficiency cells in a synchronous orbit radiation field is calculated and indicates that these cells would be superior to present silicon cells at all times. The performance of conventional cells is analyzed and several areas in which performance gains may be achieved are discussed. These areas include improvements in diffused region profile, in reduction of excess forward currents in cells made from low resistivity material and in the theory for describing complex solar cell structures.
One potential means of improving the efficiency of solar cells especially after space irradiation is to incorporate built-in fields into the device through the use of impurity doping gradients. A detailed numerical calculation of solar cell performance has been used to study various types of doping gradients. In general, the predicted improvements in performance have been less than previously reported due to various device effects such as, high injection and the dependence of lifetime on doping density.
Ion-beam sputtering, fabrication of oxide-semiconductor-on-silicon (OSOS) solar cells, results in cells of 12% efficiency. Ion-beam sputtering technique is compatible with low-cost continuous fabrication and requires no high-temperature processing.
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Method boosts output by about 20 percent by trapping and redirecting solar radiation without increasing module depth. Mounted solar-cell array is covered with internally reflecting plate. Plate is attached to each cell by transparent adhesive, and space between cells is covered with layer of diffusely reflecting material. Solar energy falling on space between cells is diffused and reflected internally by plate until it is reflected onto solar cell.
This paper presents the results of continued studies of silicon solar cell operation and limitations. The objective of this paper is to report on geometrical and doping changes in silicon solar cells which result in predictions of high efficiencies. Efficiencies as high as 20 per cent (uncorrected for metal coverage and ohmic sheet resistance) have been calculated for optimized cells. The conditions required to achieve these efficiency values are discussed.
The spatial variation of minority-carrier diffusion length in the vicinity of a grain boundary for a polycrystalline silicon sheet has been measured by the use of the EBIC technique. The effect of such a variation on solar-cell output has then been computed as a function of grain size. Calculations show that the cell output drops considerably for grain size smaller than three times the bulk diffusion length.
Single step process produces gallium arsenide solar cells having uniform and continuous Ga(1-x)Al(x)As layer thinner than 0.5 micrometers, with an efficiency of 18.5 percent.
Diffusion process for lithium doping of solar cells, and electrical characteristics and radiation resistance of solar cells
Reactor produces highly pure silicon at relatively high temperature of 2,000 K. Process separates liquid silicon product from gaseous coproducts more easily than conventional lower-temperature processes. High production rates may be obtained in relatively small reaction chambers which could include means for collecting or casting silicon ingots.
Thin films of electron beam evaporated silicon were deposited on molybdenum, tantalum, tungsten and molybdenum disilicide under ultrahigh vacuum conditions. Mass spectra from a quadrapole residual gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry. The presence of phosphorus in the silicon was responsible for attaining elevated temperatures with silicide formations. Heteroepitaxial silicon growth was sensitive to the presence of oxygen during deposition, the rate and length of deposition as well as the substrate orientation.
High efficiency solar cells required for the low cost modules was developed. The production tooling for the manufacture of the cells and modules was designed. The tooling consisted of: (1) back contact soldering machine; (2) vacuum pickup; (3) antireflective coating tooling; and (4) test fixture.
High efficiency cells (up to 14 AMO at 25 C)were fabricated from 10 - 15 ohm-cm silicon by using screen printed aluminum paste as the alloy source for the production of back surface fields. Thick consistency pastes that have been cured prior to a short heat treatment at 850 C were most effective in achieving these efficiency levels.
Progress in the effort to increase the end-of-life efficiency of solar cells for space use is assessed. Silicon solar cell efficiency, radiation effects, and gallium arsenide cells are emphasized.