Terrestrial solar cell measurements and Solar cell measurement techniques used at NASA Lewis Research Center and A standard for solar cell testing and reporting
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Ralph, E. L.↗
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Introduction to basic solar cell measurements
The basic approaches to solar cell performance and diagnostic measurements are described. The light sources, equipment for I-V curve measurement, and the test conditions and procedures for performance measurement are detailed. Solar cell diagnostic tools discussed include analysis of I-V curves, series resistance and reverse saturation current determination, spectral response/quantum yield measurement, and diffusion length/lifetime determination.
Brandhorst, H. W., Jr.↗
Solar cell measurements
The measurement of the electrical performance characteristics of individual solar cells is discussed. One of the reasons is determination of the output power, measurement of the effect of various degradation mechanisms, and separation of cells by current and voltage for eventual use in series and parallel combinations. Major problem areas in making accurate performance measurements are the determination of the irradiance level during measurement, the measurement and control of cell junction temperature, and the contacting of the separate current and potential leads to the cell under test. Solar cells respond to only part of the solar spectrum, irradiance measurement made with blackbody detectors lead to spectral mismatch errors. The use of reference cells with a spectral response similar to that of the test cell reduces this error. Reference cells are calibrated at standard atmospheric conditions with all cells calibrated at the same conditions.
Curtis, H. B.↗
Solar cell measurements in the field
Portable test instrument makes rapid current, voltage, and power measurements of photovoltaic solar cell arrays in field as well as in laboratory.
Ross, R. G., Jr.↗
Stacked solar cells measure X-ray exposure
Stacked arrangement of solar cells and scintillating sheets in alternating layers produces very sensitive X-ray measuring device. Sensor is compatible with short exposure times typical of modern X-ray film, making it suitable for application in medical soft X-ray facilities.
Berdahl, C. M.↗
High altitude current-voltage measurement of GaAs/Ge solar cells
Measurements of high-voltage (Voc of 1.2 V) gallium arsenide on germanium tandem junction solar cells at air mass 0.22 showed that the insolation in the red portion of the solar spectrum is insufficient to obtain high fill factor. On the basis of measurements in the LeRC X-25L solar simulator, these cells were believed to be as efficient as 21.68 percent AM0. Solar simulator spectrum errors in the red end allowed the fill factor to be as high as 78.7 percent. When a similar cell's current-voltage characteristic was measured at high altitude in the NASA Lear Jet Facility, a loss of 15 percentage points in fill factor was observed. This decrease was caused by insufficient current in the germanium bottom cell of the tandem stack.
Hart, Russell E., Jr.↗
Measurements of material properties for solar cells
Measurements on two candidate materials for space flight are reported. The observed optical transmittance of aluminum films vapor deposited on fused quartz showed anomalously high transmittance thru 400 A and 600 A and showed an effective skin depth of 110 A in the latter part of the 1000 A thickness. KAPTON films are shown by their optical transmission spectra to have an energy gap for electron excitation of approximately 2.5 eV, which value depends on the thickness as manufactured. The resistance of KAPTON film to ionizing radiation is described by their optical spectra and their electron spin resonance spectra.
Castle, J. G., Jr.↗
Effects of processing on the carrier lifetime in silicon solar cells
Measurements were taken to determine the effects that solar cell processing steps have on the minority carrier lifetime in silicon. The experimental work included measurements of diffusion lengths of the silicon at various stages of cell fabrication, of solar cell properties, and of the PN junction properties for ingots covering a wide range of doping and other ingot properties. Resistivities covered the range of 0.01 to 10 ohm-cm, and combinations of extreme concentrations (high and low) of dislocations and oxygen were included. The results showed that the major cell process steps did not usually cause any appreciable change in diffusion lengths. The solar cell currents obtained supported the diffusion length measurements. The effects of heavy doping concentrations on solar cell performance were studied. Attempts were made to relate the voltage behavior of the cells with the diode properties and the properties of the ingots.
Iles, P. A.↗
Minority-carrier mobility anomalies in low-resistivity silicon solar cells
Measurement of the minority-carrier mobility in the base region of a high-voltage metal-insulator-N-P solar cell (Green et al., 1984), as well as in other 0.1-ohm cm cells, provides direct proof that the high voltages measured for that cell are due not only to improved emitter characteristics but to an improved base region as well. The base characteristics are shown to be quite sensitive to the effects of diffusion-induced lattice stress originating in the emitter. The implications of these findings for the fabrication of high-efficiency cells are discussed.
Weizer, V. G.↗
Surface and allied studies in silicon solar cells
Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.
Lindholm, F. A.↗
Temperature dependence of damage coefficient in electron irradiated solar cells
Measurements of light-generated current vs cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10-ohm and 20-ohm cells. A relationship between minority-carrier diffusion length and light-generated current was derived by combining measurements of these two parameters: vs fluence at room temperature, and vs cell temperature in cells irradiated to a fluence of 1 x 10 to the 15th power e/sq cm. This relationship was used, together with the light-generated current data, to calculate the temperature dependence of the diffusion-length damage coefficient. The results show a strong decrease in the damage coefficient with increasing temperature in the range experienced by solar panels in synchronous earth orbit.
Faith, T. J.↗
Spectral response measurements of solar cells
Electro-optic instrumentation for measuring spectral response of solar cells
SOLAR CELL↗
Collection efficiency measurements for solar cell research
A system was established for measuring absolute, spectral collection efficiency that is well suited to solar cell research and development. Determination of spectral collection efficiency involves measurements of the incident photon intensity, the device reflection coefficient, and the cell short circuit current. A monochromatic photon flux is obtained with a high intensity Bausch and Lomb monochromator, and an Epply thermopile detector is used to measure incident intensity. Normal incidence reflectivity measurements are achieved with a prism type beam splitter. The experimental approach is discussed, measurements of the reflectivity of evaporated silver films are considered. Collection efficiency measurements of silicon solar cells are presented, and collection efficiency studies of Cu20 solar cells are discussed.
Hampton, H. L.↗
Physics of heavily doped silicon and solar-cell parameter measurement
A study of the physics of heavily doped silicon and solar cell parameter measurement was undertaken. The parameters investigated were energy gap, lifetime, recombination velocity, diffusivity, mobility and if N or P is high.
Lindholm, F. A.↗
Comparison of flight and terrestial solar measurements on silicon cells
Comparison of flight and terrestrial solar measurements on silicon solar cells
Hadley, C. P.↗
Application of the SEM to the measurement of solar cell parameters
Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.
Weizer, V. G.↗
Application of the SEM to the measurement of solar cell parameters
A pair of techniques are described which make use of the SEM to measure, respectively, the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. The technique yields an absolute value of the diffusion length from a knowledge of the collected fraction of the injected carriers and the cell thickness. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.
Weizer, V. G.↗