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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Application of templated vapor-liquid-solid growth to heteroepitaxy of InP on Si

Direct growth of III–V semiconductors on Si promises to combine the superior optoelectronic properties of III–Vs with the existing large-scale fabrication capabilities for Si. Vapor-liquid-solid-based growth techniques have previously been used to grow optoelectronic-quality III–Vs in polycrystalline films and various photolithography-defined features. We show that templated vapor-liquid-solid growth can produce epitaxial material when performed on crystalline substrates. In templated vapor-liquid-solid growth, the metal group-III precursor is evaporated along with a capping SiO 2 layer on the crystalline substrate, then melted and converted with exposure to a vapor-phase group-V precursor. We demonstrate homoepitaxial growth of InP on InP wafers using two forms of the SiO x capping layer to confine the liquid metal: evaporated SiO 2 and solgel SiO x , the latter of which is necessary for growth on Si. We then demonstrate heteroepitaxial growth of InP islands on Si substrates from both evaporated and electroplated In metals. The templated vapor-liquid-solid process provides better material utilization and growth rates than common vapor-phase techniques, with similar control and convenience, providing a path toward the large-scale fabrication of integrated optoelectronic components.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Salt‐Assisted Vapor–Liquid–Solid Growth of 1D van der Waals Materials

The method of salt-assisted vapor–liquid–solid (VLS) growth is introduced to synthesize 1D nanostructures of trichalcogenide van der Waals (vdW) materials, exemplified by niobium trisulfide (NbS 3 ). The method uses a unique catalyst consisting of an alloy of Au and an alkali metal halide (NaCl) to enable rapid and directional growth. High yields of two types of NbS 3 1D nanostructures, nanowires and nanoribbons, each with sub-ten nanometer diameter, tens of micrometers length, and distinct 1D morphology and growth orientation are demonstrated. Strategies to control the location, size, and morphology of growth, and extend the growth method to synthesize other transition metal trichalcogenides, NbSe 3 and TiS 3 , as nanowires are demonstrated. Finally, the role of the Au–NaCl alloy catalyst in guiding VLS synthesis is described and the growth mechanism based on the relationships measured between structure (growth orientation, morphology, and dimensions) and growth conditions (catalyst volume and growth time) is discussed. These results introduce opportunities to expand the library of emerging 1D vdW materials to make use of their unique properties through controlled growth at nanoscale dimensions.

1D van der Waals material↗
NASA NTRS1976

Solid-state growth of Si to produce planar surfaces

Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control of Si growth using a solid growth medium. Faceted dissolution pits were first produced in a Si substrate using standard photolithographic techniques and Al metallization. Si was then evaporated onto the cold structure, depositing as amorphous material. Upon heating, the amorphous Si migrated through the solid Al and grew rapidly in the faceted pits, typically refilling them flush with the surrounding substrate. Evidence that the rapid growth occurs only while the amorphous Si is dissolving into the Al is presented.

Boatright, R. L.↗
NASA NTRS1997

Crystal Growth of Solid Solution HgCdTe Alloys

The growth of homogenous crystals of HgCdTe alloys is complicated by the large separation between their liquidus and solidus temperatures. Hg(1-x)Cd(x)Te is representative of several alloys which have electrical and optical properties that can be compositionally tuned for a number of applications. Limitations imposed by gravity during growth and results from growth under reduced conditions are described. The importance of residual accelerations was demonstrated by dramatic differences in compositional distribution observed for different attitudes of the space shuttle that resulted in different steady acceleration components.

Lehoczky, Sandor L.↗
NASA NTRS1984

Solidification and crystal growth of solid solution semiconducting alloys

Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

Lehoczky, S. L.↗
NASA NTRS1988

Dopant redistribution during the solid-phase growth of CrSi2 on Si(100)

The distribution pattern of As, B, and P dopants during the solid-phase growth of CrSi2 on Si(100) was investigated using Rutherford backscattering spectroscopy and SIMS. The results demonstrated that all three dopants did redistribute during the formation of CrSi2 layers; however, the nature of redistribution was different for different dopants. While B and P were transported from the Si substrate to the surface of the growing CrS2 layer, As accumulated at the CrSi2/Si interface. The formation of silicide was found to be inhibited by large concentrations of As. A model was developed to explain these results.

Rockett, A.↗
DOE OSTI2025

Alternate InP synthesis with aminophosphines: solution–liquid–solid nanowire growth

Indium phosphide nanowires are important components in high-speed electronics and optoelectronics, including photodetectors and photovoltaics. However, most syntheses either use high-temperature and costly vapor-phase methodology or highly toxic and pyrophoric tris(trimethylsilyl)phosphine. To expand on the success of the aminophosphine-based InP colloidal quantum dot synthesis, we developed a synthesis for thin (~11 nm) zinc blende InP nanowires at 180 °C using indium tris(trifluoroacetate) and tris(diethylamino)phosphine. A flat nanoribbon morphology was identified by transmission electron and atomic force microscopy analysis, with the stoichiometric (110) lattice plane exposed. Nanowire growth proceeded through a solution–liquid–solid mechanism from in situ-formed indium metal nanoparticles. Molecular byproducts of tris(oleylamino)phosphine oxide and N-oleyltrifluoroacetamide observed by 31 P and 19 F NMR spectroscopy inform a proposed mechanism of indium reduction by the aminophosphine. Morphological control over the nanowire product was achieved by varying the phosphorus injection to control the aspect ratio, the In : P ratio to toggle between nanowires and multipods, and the pre-hot injection evacuation step to favor a quantum dot product. Furthermore, replacing the indium precursor with indium tris(trifluoromethanesulfonate) was found to make bulk zinc blende InP nanowires with an average diameter of >250 nm and tens of microns in length.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1991

Influence of mass diffusion on the stability of thermophoretic growth of a solid from the vapor phase

The stability of solid planar growth from a binary vapor phase with a condensing species dilute in a carrier gas is examined when the ratio of depositing to carrier species molecular mass is large and the main diffusive transport mechanism is thermal diffusion. It is shown that a deformation of the solid-gas interface induces a deformation of the gas phase isotherms that increases the thermal gradients and thereby the local mass deposition rate at the crests and reduces them at the valleys. The initial surface deformation is enhanced by the modified deposition rates in the absence of appreciable Fick/Brownian diffusion and interfacial energy effects.

Castillo, J. L.↗
DOE OSTI2020

Tailoring grain growth and solid solution strengthening of single-phase CrCoNi medium-entropy alloys by solute selection

In the present study, we selected solutes to be added to the CrCoNi medium-entropy alloy (MEA) based on the mismatch of self-diffusion activation energy (SDQ) between the alloying elements and constituent elements of the matrix, and then investigated their grain growth behavior and mechanical properties. Mo and Al were selected as the solutes for investigation primarily because they have higher and lower SDQ, respectively, than those of the matrix elements; a secondary factor was their higher and lower shear modulus. Their concentrations were fixed at 3 at.% each because previous work had shown these compositions to be single-phase solid solutions with the face-centered cubic structure. Three alloys were produced by arc melting, casting, homogenizing, cold rolling and annealing at various temperatures and times to produce samples with different grain sizes. They were (a) the base alloy CrCoNi, (b) the base alloy plus 3 at.% Mo, and (c) the base alloy plus 3 at.% Al. The activation energies for grain growth of the CrCoNi, CrCoNi-3Mo and CrCoNi-3Al MEAs were found to be ~251, ~368 and ~219 kJ/mol, respectively, consistent with the notion that elements with higher SDQ (in this study Mo) retard grain growth (likely by a solute-drag effect), whereas those with lower values (Al) accelerate grain growth. The room-temperature tensile properties show that Mo increases the yield strength by ~40% but Al addition has a smaller strengthening effect consistent with their relative shear moduli. The yield strength as a function of grain size for the three singlephase MEAs follows the classical Hall-Petch relationship with much higher slopes (> 600 MPa μm -0.5 ) than traditional solid solutions. Furthermore, this work shows that the grain growth kinetics and solid solution strengthening of the CrCoNi MEA can be tuned by selecting solute elements that have appropriate diffusion and physical properties.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Growth of Solid Solution Crystals

The major objective of this program is to determine the conditions under which single crystals of solid solutions can be grown from the melt in a Bridgman configuration with a high degree of chemical homogeneity. The central aim is to assess the role of gravity in the growth process and to explore the possible advantages for growth in the absence of gravity. The alloy system being investigated is the solid solution semiconductor with x-values appropriate for infrared detector applications in Hg sub (1-x) Cd sub x Te the 8 to 14 micro m wavelength region. Both melt and Te-solvent growth are being considered. The study consists of an extensive ground-based experimental and theoretical research effort followed by flight experimentation where appropriate. Experimental facilities have been established for the purification, casting, and crystal growth of the alloy system. Facilities have been also established for the metallurgical, compositional, electric and optical characterization of the alloys. Crystals are being grown by the Bridgman-Stockbarger method and are analyzed by various experimental techniques to evaluate the effects of growth conditions on the longitudinal and radial compositional variations and defect densities in the crystals.

Lehoczky, S. L.↗
NASA NTRS1987

Growth of solid solution single crystals

Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed for the failure of conventional Bridgman-Stockbarger growth methods to produce high quality homogeneous crystals in the presence of Earth's gravity. The deleterious effects are considered which arise from the dependence of the thermophysical properties on temperature and composition and from the large amount of heat carried by the fused silica ampules. An improved growth method, developed to optimize heat flow conditions, is described and experimental results are presented. The problems associated with growth in a gravitational environment are discussed. The anticipated advantages of growth in microgravity are given and the implications of the requirements for spaceflight experiments are summarized.

Lehoczky, S. L.↗
NASA NTRS1987

Growth of solid solution single crystals

Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed for the failure of conventional Bridgman-Stockbarger growth methods to produce high quality homogeneous crystals in the presence of Earth's gravity. The deleterious effects are considered which arise from the dependence of the thermophysical properties on temperature and composition and from the large amount of heat carried by the fused silica ampules. An improved growth method, developed to optimize heat flow conditions, is described and experimental results are presented. The problems associated with growth in a gravitational environment are discussed. The anticipated advantages of growth in microgravity are given and the implications of the requirements for spaceflight experiments are summarized.

Lehoczky, S. L.↗
NASA NTRS1988

Growth of solid solution single crystals

Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed for the failure of conventional Bridgman-Stockbarger growth methods to produce high quality homogeneous crystals in the prescence of Earth's gravity. The deleterious effects are considered which arise from the dependence of the thermophysical properties on temperature and composition and from the large amount of heat carried by the fused silica ampules. An improved growth method, developed to optimize heat flow conditions, is described and experimental results are presented. The problems associated with growth in a gravitational environment are discussed. The anticipated advantages of growth in microgravity are given and the implications of the requirements for spaceflight experiments are summarized.

Lehoczky, S. L.↗
NASA NTRS1999

Growth of Solid Solution Single Crystals

The objective of the study is to establish the effects of processing semiconducting, solid solution, single crystals in a microgravity environment on the metallurgical, compositional, electrical, and optical characteristics of the crystals. The alloy system being investigated is the solid solution semiconductor Hg(1-x)Cd(x)Te, with x-values appropriate for infrared detector applications in the 8 to 14 mm wavelength region. Both melt and Te-solvent growth are being performed. The study consists of an extensive ground-based experimental and theoretical research effort followed by flight experimentation where appropriate. The ground-based portion of the investigation also includes the evaluation of the relative effectiveness of stabilizing techniques, such as applied magnetic fields, for suppressing convective flow during the melt growth of the crystals.

Lehoczky, Sandor L.↗
NASA NTRS1979

Colloidal plasmas in space - Some aspects of condensation and growth of solids

The abundant occurrence of colloidal plasma clouds in the observable universe is reviewed, and the possible locales of condensation of cosmic solids identified. The physical properties of the condensation environment and the thermal physics of the plasma-cluster medium are outlined. In the light of these discussions, an attempt is made to identify the salient features of the processes of nucleation and growth in space. It is suggested that the conventional nucleation theory is inadequate when applied to the tenuous, partially excited, partially ionized multispecies cosmic vapor phase, and that studies relying on the physics of progressive molecule growth in such environments hold promise of understanding the process of transition of a cluster from the size of a few atomic mass units through the macromolecular range into what may be characterized as the bulk condensed phase.

De, B. R.↗