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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Frez, Clifford F.↗

Applications of an Energy Transfer Model to Three Problems in Planetary Regoliths: The Solid-State Greenhouse, Thermal Beaming, and Emittance Spectra

Several problems of interest in planetary infrared remote sensing are investigated using a new radiative-conductive model of energy transfer in regoliths: the solid-state greenhouse effect, thermal beaming, and reststrahlen spectra. The results of the analysis are as follows: (1) The solid-state greenhouse effect is self-limiting to a rise of a few tens of degrees in bodies of the outer solar system. (2) Non-Lambertian directional emissivity can account for only about 20% of the observed thermal beaming factor. The remainder must have another cause, presumably surface roughness effects. (3) The maximum in a reststrahlen emissivity spectrum does not occur exactly at the Christiansen wavelength where, by definition, the real part of the refractive index equals one, but rather at the first transition minimum in reflectance associated with the transition from particle scattering being dominated by volume scattering to that dominated by strong surface scattering. The transparency feature is at the second transition minimum and does not require the presence of a second band at longer wavelength for its occurance. Subsurface temperature gradients have only a small effect on emissivity bands.

Hapke, Bruce↗

Improved solid-state triode construction

Triode is constructed from rectangular filament made of near-intrinsic n-type silicon. Collector and emitter are formed on opposite faces of filament and are spaced approximately 0.13 mm apart. Gate electrodes are alloyed to filament and extend longitudinally along midsection of other two opposite sides, approximately 0.06 mm apart.

Shumka, A.↗

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to ~50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at ~50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths ~10-200 (mu)s and with repetition rates of ~10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Eegholm, Niels↗

Space-charge-limited solid-state triode

A solid-state triode is provided from a wafer of nearinstrinsic semiconductor material sliced into filaments of rectangular cross section. Before slicing, emitter and collector regions are formed on the narrow sides of the filaments, and after slicing gate regions are formed in arrow strips extending longitudinally along the midsections of the wide sides of the filaments. Contacts are then formed on the emitter, collector and gate regions of each filament individually for a single filament device, or in parallel for an array of filament devices to increase load current.

Shumka, A.↗

Improved dc voltage regulator

Simplified solid-state circuit provides a closely regulated dc voltage from an unregulated dc source. It eliminates the undesirable loading effect of the emitter-base current of a transistor used in an error-sensing circuit of a regulated dc power supply.

Barnes, H. F.↗

Solid-state current transformer

A signal transformation network which is uniquely characterized to exhibit a very low input impedance while maintaining a linear transfer characteristic when driven from a voltage source and when quiescently biased in the low microampere current range is described. In its simplest form, it consists of a tightly coupled two transistor network in which a common emitter input stage is interconnected directly with an emitter follower stage to provide virtually 100 percent negative feedback to the base input of the common emitter stage. Bias to the network is supplied via the common tie point of the common emitter stage collector terminal and the emitter follower base stage terminal by a regulated constant current source, and the output of the circuit is taken from the collector of the emitter follower stage.

Farnsworth, D. L.↗

Miniature X-Ray Tubes

Miniature x-ray tubes proposed for use in portable instruments used to analyze minerals. Electrons from field emitter (instead of thermionic emitter) accelerated to target to generate x-rays. Fabricated from silicon wafers, micromachined field emitters (MFEs) not subject to breakage or restrictions on lifetimes, and tolerate vacuums that filaments cannot. Miniature x-ray tubes very robust, immune to shock and vibration, and permanently sealed with getter for continued pumping. Combined with solid-state x-ray detectors for analysis of x-ray fluorescence.

Bearman, Gregory H.↗

Multibeam Laser Altimeter for Planetary Topographic Mapping

Laser altimetry provides an active, high-resolution, high-accuracy method for measurement of planetary and asteroid surface topography. The basis of the measurement is the timing of the roundtrip propagation of short-duration pulses of laser radiation between a spacecraft and the surface. Vertical, or elevation, resolution of the altimetry measurement is determined primarily by laser pulse width, surface-induced spreading in time of the reflected pulse, and the timing precision of the altimeter electronics. With conventional gain-switched pulses from solid-state lasers and nanosecond resolution timing electronics, submeter vertical range resolution is possible anywhere from orbital altitudes of approximately 1 km to altitudes of several hundred kilometers. Horizontal resolution is a function of laser beam footprint size at the surface and the spacing between successive laser pulses. Laser divergence angle and altimeter platform height above the surface determine the laser footprint size at the surface, while laser pulse repetition rate, laser transmitter beam configuration, and altimeter platform velocity determine the spacing between successive laser pulses. Multiple laser transmitters in a single laser altimeter instrument that is orbiting above a planetary or asteroid surface could provide across-track as well as along-track coverage that can be used to construct a range image (i.e., topographic map) of the surface. We are developing a pushbroom laser altimeter instrument concept that utilizes a linear array of laser transmitters to provide contiguous across-track and along-track data. The laser technology is based on the emerging monolithic combination of individual, 1-sq cm diode-pumped Nd:YAG laser pulse emitters. Details of the multi-emitter laser transmitter technology, the instrument configuration, and performance calculations for a realistic Discovery-class mission will be presented.

Garvin, J. B.↗

Radiation-Insensitive Inverse Majority Gates

To help satisfy a need for high-density logic circuits insensitive to radiation, it has been proposed to realize inverse majority gates as microscopic vacuum electronic devices. In comparison with solid-state electronic devices ordinarily used in logic circuits, vacuum electronic devices are inherently much less adversely affected by radiation and extreme temperatures. The proposed development would involve state-of-the-art micromachining and recent advances in the fabrication of carbon-nanotube-based field emitters. A representative three-input inverse majority gate would be a monolithic, integrated structure that would include three gate electrodes, six bundles of carbon nanotubes (serving as electron emitters) at suitable positions between the gate electrodes, and an overhanging anode. The bundles of carbon nanotubes would be grown on degenerately doped silicon substrates that would be parts of the monolithic structure. The gate electrodes would be fabricated as parts of the monolithic structure by means of a double-silicon-on-insulator process developed at NASA's Jet Propulsion Laboratory. The tops of the bundles of carbon nanotubes would lie below the plane of the tops of the gate electrodes. The particular choice of shapes, dimensions, and relative positions of the electrodes and bundles of carbon nanotubes would provide for both field emission of electrons from the bundles of carbon nanotubes and control of the electron current to obtain the inverse majority function, which is described in the paper.

Manohara, Harish↗