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Results for “solid-state junction”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

K-band FET amplifier for satellite downlink

State-of-the-art performance is demonstrated with solid-state amplifiers in K-band. The amplifier provides 8.2 watts of power with 39 dB gain over a frequency band of 1.4 GHz. Nonlinearity analyses of solid-state amplifiers suggest that system performance can be improved significantly by using an FET amplifier. Preliminary investigations reveal that the solid-state amplifiers can be space-qualified and can be expected to replace the TWTA in many communication links in the near future. It is pointed out that with improvements in device technology, the power, bandwidth and efficiency of solid-state amplifiers using FETs can be further improved. With FETs operating at a junction temperature of less than 125 C, solid-state amplifiers are inherently reliable, indicating a ten-year mean time to failure.

Goel, J.↗
NASA NTRS1961

A Technique for Increasing the Sensitivity of a Solid-State Fission Probe

A small silicon p-n junction wafer, when coated with uranium 235, can be used as a compact fission probe for low power flux and power mapping. Because of the inverse relation between the magnitude of a neutron-induced fission pulse and the inherent capacitance of the detecting element (capacitance is proportional to area), the size, and hence the sensitivity, of the semiconductor detector has been limited. New developments in the field of semiconductor detectors have made it possible to fabricate large area detectors which are essentially free from the capacitance effect. However, preliminary results indicate that they are much more susceptible to radiation damage than the detectors described in this report and as such may not be suitable for flux mapping. increasing the sensitivity cannot be accomplished by simply fabricating a larger detector. It has been observed that by combining the silicon p-n junction wafers in a series configuration the capacitance effect can be bypassed, and a fission probe can be made with a resultant increase in sensitivity by a factor of ten while sustaining only a minor decrease in pulse height. Analysis further indicates that for n silicon wafers in series, if n(C(sub i)) + C(sub c)/C(sub b) less than 0.1 where C(sub i) and C(sub c) are the preamplifier input and cable capacitances, respectively, and C(sub b) is the junction capacitance of a single silicon wafer, there should be no substantial reduction in pulse height due to series circuitry.

Steinberg, Robert↗
NASA NTRS2002

Computational Nanotechnology Molecular Electronics, Materials and Machines

This presentation covers research being performed on computational nanotechnology, carbon nanotubes and fullerenes at the NASA Ames Research Center. Topics cover include: nanomechanics of nanomaterials, nanotubes and composite materials, molecular electronics with nanotube junctions, kinky chemistry, and nanotechnology for solid-state quantum computers using fullerenes.

Srivastava, Deepak↗
NASA NTRS1981

The 'depletion layer' of amorphous p-n junctions

It is shown that within reasonable approximations for the density of state distribution within the mobility gap of a:Si, a one-to-one correspondence exists between the electric field distribution in the transition region of an amorphous p-n junction and that in the depletion layer of a crystalline p-n junction. Thus it is inferred that the depletion layer approximation which leads to a parabolic potential distribution within the depletion layer of crystalline junctions also constitutes a fair approximation in the case of amorphous junctions. This fact greatly simplifies an analysis of solid-state electronic devices based on amorphous material (i.e., solar cells).

Von Roos, O.↗
NASA NTRS1973

Residual water bactericide monitor development program

A silver-ion bactericidal monitor is considered for the Space Shuttle Potable Water System. Potentiometric measurement using an ion-selective electrode is concluded to be the most feasible of available techniques. Four commercially available electrodes and a specially designed, solid-state, silver-sulfide electrode were evaluated for their response characteristics and suitability for space use. The configuration of the solid-state electrode with its Nernstian response of 10 to 10,000 ppb silver shows promise for use in space. A pressurized double-junction reference electrode with a quartz-fiber junction and a replaceable bellows electrolyte reservoir was designed verification-tested, and paired with a solid-state silver-sulfide electrode in a test fixture.

Source record↗
NASA NTRS1974

Preliminary flight prototype silver ion monitoring system

The design, fabrication, and testing of a preliminary flight prototype silver ion monitoring system based on potentiometric principles and utilizing a solid-state silver sulfide electrode paired with a pressurized double-junction reference electrode housing a replaceable electrolyte reservoir is described. The design provides automatic electronic calibration utilizing saturated silver bromide solution as a silver ion standard. The problem of loss of silver ion from recirculating fluid, its cause, and corrective procedures are reported. The instability of the silver sulfide electrode is discussed as well as difficulties met in implementing the autocalibration procedure.

Brady, J.↗
NASA NTRS1983

Inelastic electron tunneling spectroscopy

Inelastic electron tunneling spectroscopy is a useful technique for the study of vibrational modes of molecules adsorbed on the surface of oxide layers in a metal-insulator-metal tunnel junction. The technique involves studying the effects of adsorbed molecules on the tunneling spectrum of such junctions. The data give useful information about the structure, bonding, and orientation of adsorbed molecules. One of the major advantages of inelastic electron tunneling spectroscopy is its sensitivity. It is capable of detecting on the order of 10 to the 10th molecules (a fraction of a monolayer) on a 1 sq mm junction. It has been successfully used in studies of catalysis, biology, trace impurity detection, and electronic excitations. Because of its high sensitivity, this technique shows great promise in the area of solid-state electronic chemical sensing.

Khanna, S. K.↗
NASA NTRS1989

Fundamental tribological properties of ion-beam-deposited boron nitride films

The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

Miyoshi, Kazuhisa↗
NASA NTRS1990

Fundamental tribological properties of ion-beam-deposited boron nitride films

The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

Miyoshi, K.↗
NASA NTRS2004

The Space Technology 5 Avionics System

The Space Technology 5 (ST5) mission is a NASA New Millennium Program project that will validate new technologies for future space science missions and demonstrate the feasibility of building launching and operating multiple, miniature spacecraft that can collect research-quality in-situ science measurements. The three satellites in the ST5 constellation will be launched into a sun-synchronous Earth orbit in early 2006. ST5 fits into the 25-kilogram and 24-watt class of very small but fully capable spacecraft. The new technologies and design concepts for a compact power and command and data handling (C&DH) avionics system are presented. The 2-card ST5 avionics design incorporates new technology components while being tightly constrained in mass, power and volume. In order to hold down the mass and volume, and quali& new technologies for fUture use in space, high efficiency triple-junction solar cells and a lithium-ion battery were baselined into the power system design. The flight computer is co-located with the power system electronics in an integral spacecraft structural enclosure called the card cage assembly. The flight computer has a full set of uplink, downlink and solid-state recording capabilities, and it implements a new CMOS Ultra-Low Power Radiation Tolerant logic technology. There were a number of challenges imposed by the ST5 mission. Specifically, designing a micro-sat class spacecraft demanded that minimizing mass, volume and power dissipation would drive the overall design. The result is a very streamlined approach, while striving to maintain a high level of capability, The mission's radiation requirements, along with the low voltage DC power distribution, limited the selection of analog parts that can operate within these constraints. The challenge of qualifying new technology components for the space environment within a short development schedule was another hurdle. The mission requirements also demanded magnetic cleanliness in order to reduce the effect of stray (spacecraft-generated) magnetic fields on the science-grade magnetometer.

Speer, Dave↗
NASA NTRS1998

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS1985

Thin-film chemical sensors based on electron tunneling

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

Khanna, S. K.↗
NASA NTRS2000

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Kuczmarski, Maria A.↗
NASA NTRS1965

Solid-state detector

Solid state detector - N type silicon surface barrier diode as microparticle detector

SOLID STATE DEVICE↗