Modeling spin-dependent transport in InAs/GaSb/AISb resonant tunneling structures
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Simulations of Resonant Intraband and Interband Tunneling Spin Filters
This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).
resonant tunneling↗
InAs/GaSb/AlSb resonant tunneling spin device concepts
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spin transport resonant tunneling↗
Nonmagnetic resonant tunneling spin devices
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spin transport resonant tunneling↗
Nonmagnetic resonant tunneling spin filter and bi-directional spin pump
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spin transport resonant tunneling↗
Spin filtering in aysmmetric resonant interband tunneling diodes
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spin transport resonant tunneling↗
Spin filtering in asymmetric resonant interband tunneling diodes
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spin transport resonant tunneling↗
Ultra-refractive and extended-range one-dimensional photonic crystal superprisms
We describe theoretical analysis and design of one-dimensional photonic crystal prisms. We found that inside the photonic crystal, for frequencies near the band edges, light propagation direction is extremely sensitive to the variations in wavelength and incident angle.
spin transport resonant tunneling↗
Search for Spin Filtering By Electron Tunneling Through Ferromagnetic EuS Barriers in Pbs
Perpendicular transport through single- and double-barrier heterostructures consisting of ferromagnetic EuS layers embedded into PbS matrix was investigated. Manifestations of both resonant tunneling and spin filtering through EuS barrier have been observed.
Figielski, T.↗
InAs/GaSb/AlSb resonant tunneling spin device concepts
We discuss device concepts for creating spin polarized current sources without external magnetic fields, using nonmagnetic 6.1 A semiconductor resonant tunneling structures.
spin filter spin pump resonant tunneling bulk inve↗
Enhancing Spin Filters by Use of Bulk Inversion Asymmetry
Theoretical calculations have shown that the degrees of spin polarization in proposed nonmagnetic semiconductor resonant tunneling spin filters could be increased through exploitation of bulk inversion asymmetry (BIA). These enhancements would be effected through suitable orientation of spin collectors (or spin-polarization- inducing lateral electric fields), as described below. Spin filters -- more precisely, sources of spin-polarized electron currents -- have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-transport electronics). The proposed spin filters were to be based on the Rashba effect, which is an energy splitting of what would otherwise be degenerate quantum states, caused by a spinorbit interaction in conjunction with a structural-inversion asymmetry (SIA) in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. In a spin filter, the spin-polarized currents produced by the Rashba effect would be extracted by quantum-mechanical resonant tunneling.
Ting, David↗