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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Computational Fluid Dynamics Modeling to Facilitate Qualification of Stack Sampling Probe Location

Computational fluid dynamics (CFD) modeling was used to help evaluate modifications to a radiological effluent stack and assist with establishing a stack sampling location that met the mixing criteria for qualification. Requirements for stack sampling location are listed in the American National Standards Institute/Health Physics Society (ANSI/HPS) N13.1-2021 standard. Modeling was performed to help develop a suitable design for increasing building ventilation for the radiological effluent stack. The ANSI/HPS N13.1-2021 criteria for the air monitoring probe location are that the coefficient of variation of velocity uniformity, gaseous tracer uniformity, and particulate tracer uniformity must be less than or equal to 20%. Furthermore, no point in the sampling location may have a gaseous tracer concentration that varies from the mean concentration by more than 30%. Additionally, the flow angle at the sampling location must not be more than 20 degrees. The ANSI/HPS N13.1-2021 standard allows for models (physical or computational) to be employed to perform the full suite of qualification tests, followed by a more limited set of verification tests on the actual stack to qualify the stack sampling location. Here, a series of computational model simulations were employed to evaluate the stack qualification criteria. Significant time and re-source savings are achieved using CFD modeling. CFD modeling demonstrated that the stack meets the criteria at the sample probe location. Verification tests were performed on the modified stack to measure the velocity uniformity and flow angle at the stack sampling location, and results demonstrated that the CFD model results may be used to support the qualification of the stack sampling location.

Air Monitoring↗
DOE OSTI2025

Substituent and Heteroatom Effects on π–π Interactions: Evidence That Parallel-Displaced π-Stacking is Not Driven by Quadrupolar Electrostatics

Stacking interactions are a recurring motif in supramolecular chemistry and biochemistry, where a persistent theme is a preference for parallel-displaced aromatic rings rather than face-to-face π-stacking. This is usually explained in terms of quadrupole–quadrupole interactions between the arene moieties but that interpretation is inconsistent with accurate calculations, which reveal that the quadrupolar picture is qualitatively wrong. At typical π-stacking distances, quadrupolar electrostatics may differ in sign from an exact calculation based on charge densities of the interacting arenes. We apply symmetry-adapted perturbation theory to dimers composed of substituted benzene and various aromatic heterocycles, which display a wide range of electrostatic interactions, and we investigate the interplay of Pauli repulsion, dispersion, and electrostatics as it pertains to parallel-displaced π-stacking. Profiles of energy components along cofacial slip-stacking coordinates support a prominent role for the “van der Waals model” (dispersion in competition with Pauli repulsion), even for polar monomers where electrostatic interactions are significant. While electrostatic interactions are necessary to explain the optimal face-to-face π-stacking distance and to account for the relative orientation of one polar arene with respect to another, we find no evidence to support continued invocation of quadrupolar electrostatics as a basis for π-stacking. Our results suggest that a driving force for offset-stacking exists even in the absence of electrostatic interactions. Consequently, tuning electrostatics via functionalization does not guarantee that slip-stacking can be avoided. This has implications for rational design of soft materials and other supramolecular architectures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

On the distribution of stacking faults at dissociated medium-angle grain boundaries: Crystallographic geometry and metastability

Grain boundaries in FCC metals with low stacking-fault energy can form in dissociated configurations of stacking faults. Perhaps the most studied example is 9R stacking at boundaries near Σ3{112}, where the distribution of stacking faults is related to the emission of Shockley partial dislocations. Here, we combine atomic-resolution electron microscopy, atomistic simulations, and dislocation theory to demonstrate that boundaries vicinal to Σ33a support the stabilization of dissociated 9R stacking within a narrow range of inclinations. This boundary is interesting since its misorientation (20.05°) lies in the medium-angle regime, just past the upper misorientation limit for low-angle boundaries, motivating questions for how best to describe it in terms of dislocations. Our HAADF-STEM observations of thin film bicrystals, supported by atomistic modeling, reveal that this inclination dependence arises from specific geometric constraints on the arrangement of Shockley partial dislocations at the interface. Quantification of stacking-fault distributions across multiple boundaries indicates that the density and spacing of faults closely follow the ideal 9R motif, with subtle variations reflecting the complex energy landscape of these boundaries. Through energetic analysis, we establish the presence of competing metastable states enabled by variations in stacking sequences, emphasizing the significant role of crystallographic geometry. We generalize our analysis as a function of misorientation, showing how 9R at the Σ33a boundary is related to previous observations and calculations of HCP at a 29.7° boundary. This study provides a crystallographically grounded framework connecting dislocation structures, stacking-fault distributions, and metastability at grain boundaries in FCC metals.

Atomistic modeling↗
DOE OSTI2026

Identifying Strain Stacking Boundaries between Multiphase Domains in Atomically Thin Two-Dimensional Magnets

Stacking engineering of van der Waals materials is an important strategy to control the materials’ properties, such as electronic correlations, ferroelectricity, and layer-dependent two-dimensional magnetism. A timely testbed for the study of the latter is atomically thin chromium trihalides (CrX 3 , X = Cl, Br, I). Notably, by understanding the sliding mechanism between different stacking sequences, control of the stacking arrangement, and thus magnetic properties in CrX 3 , can be achieved. Such insight, however, is currently lacking. Here, in this study, advanced electron microscopy methods are used to identify multiple stacking sequences corresponding to different bulk phases in atomically thin CrX 3 (X = Cl and Br) down to bilayer thickness and with lateral domain sizes as small as tens of nanometers. Indications of nanometer scale transitions and interactions at the stacking boundaries are found, including a universally preferred sliding direction that is consistent with density functional theory calculations and the strain fields at lateral heterostructure boundaries. This study demonstrates the necessity to consider local stacking structures when interpreting averaged magnetic properties measured with macroscale probes. Additionally, the preferred sliding direction insight from this study provides a strategy to control stacking sequence in atomically thin CrX 3 samples during the exfoliation and sample fabrication process.

DFT calculations↗
DOE OSTI2025

Atomic Structural Features of Stacking Faults and Domain Connections in the Li- and Mn-Rich Cathode

Li- and Mn-rich layered oxides (LMRs), a class of earth-abundant materials for rechargeable Li-ion battery cathodes, crystallize into layered structures of two different symmetries: C2/m represented by Li 2 MnO 3 and R$\overline{3}$m represented by LiMn 0.5 Ni 0.5 O 2 . Fundamental questions about how the C2/m and R$\overline{3}$m domains spatially correlate within the same oxide grain and how the C2/m stacking faults arrange themselves when this happens still remain. Here, by using integrated differential phase contrast imaging in scanning transmission electron microscopy (STEM-iDPC), we probe the structural and compositional details of a prototypical, cobalt-free LMR material, 0.3Li 2 MnO 3 •0.7LiMn 0.5 Ni 0.5 O 2 (Li 1.13 Mn 0.57 Ni 0.3 O 2 ). The connection between the C2/m and R$\overline{3}$m domains is found to be abrupt, facilitated by the small lattice mismatch between the two structures. Stacking faults in the C2/m domains feature atomic plane shifting that accommodates stacking sequence changes, which explains why the stacking faults form in a random manner. Furthermore, a local disordering mechanism was identified to correlate with the C2/m stacking faults. Chemically, it is found that Ni coexists with Mn at the transition metal sites within the nominal Li 2 MnO 3 domain. As a result, this study demonstrates that STEM-iDPC is a very useful tool for capturing all the elements in a single image, revealing atomic details on domain connections and stacking faults in the LMRs.

Li-rich and Mn-rich oxides↗
DOE OSTI2025

Influence of stacking fault energy and hydrogen on deformation mechanisms in high Mn austenitic steels during in-situ tensile testing

High Mn austenitic steels are considered an economical alloy system for hydrogen storage and transport applications. This study used stacking fault energy (SFE) as a design parameter to achieve hydrogen embrittlement (HE)-resistant high Mn austenitic alloys. The role of hydrogen on the deformation mechanisms of low (29 mJ/m 2 ) and high SFE (49 mJ/m 2 ) alloys was evaluated through in-situ neutron diffraction during tensile loading. Hydrogen-precharging increased yield strength, partly due to hydrogen-induced lattice distortion (i.e., solute strengthening). Hydrogen accelerated the increase in defect density, including dislocations and stacking faults. The formation of planar deformation structures (twins and stacking faults), relative to dislocations, plays a critical role in promoting hydrogen-assisted fracture. The stacking fault frequency parameter obtained from neutron diffraction quantifies planar deformation tendencies, correlated with HE sensitivity. The higher SFE alloy exhibited greater resistance to HE, associated with the reduced propensity to form stacking faults and twins upon deformation in the hydrogen-precharged condition.

High Mn austenitic steel↗
DOE OSTI2026

Measurement of Transverse Resistance for Stacks of Non-insulated REBCO Tapes

Transverse resistance among adjacent conductors is a key parameter to calculate AC losses in superconducting cables with non-insulated conductors. The transverse pressure insert (TPI) previously developed and used at Fermilab was modified to measure transverse resistance of stacks made of non-insulated REBCO tapes as a function of transverse pressure at liquid nitrogen temperature. Pressure up to 322 MPa was applied with a hydraulic cylinder. A small current up to 10 A was flown in the stack sample through REBCO tape leads spliced above and below the stack. The latter had a bending radius larger than 6 mm to prevent the critical current degradation in REBCO leads. The voltage was measured just outside the compressed area. Stack samples included stacks of bare 4-mm wide REBCO tapes, as well as REBCO tapes alternated with 4-mm wide stainless-steel ribbons of 40 μm and 30 μm of thickness. We herein present the results of these transverse resistance measurements. Results show a stronger dependence on pressure for smaller pressure vs. larger ones. Also, of the two components of contact resistance, i.e. contact and bulk, the latter was negligible.

Tamagnini, E. [Turin Polytechnic]↗
DOE OSTI2024

PyFaults: A Python Toolkit for Stacking Fault Screening

PyFaults is an open-source Python library designed to model stacking fault disorder in crystalline materials and qualitatively assess the characteristic selective broadening effects in powder X-ray diffraction (PXRD). Here, the main capabilities of PyFaults are presented, including unit cell and supercell model construction, PXRD pattern calculation, assessment against experimental PXRD, and methods for rapid screening of candidate models within a set of possible stacking vectors and fault occurrence probabilities. This program aims to serve as a computationally inexpensive tool for identifying and screening potential stacking fault models in materials with planar disorder. Three diverse case studies, involving GaN, Li2MnO3 and Li3YCl6, are presented to illustrate the program functionality across a range of structure types and stacking fault modalities.

MATHEMATICS AND COMPUTING↗
DOE OSTI2026

Stacking fault analysis for the early-stages of PVT growth of 4H-SiC crystals

Here, four types of stacking fault formation mechanisms are identified and discussed for early stage PVT growth of 4H-SiC crystals: Type 1: Shockley / double Shockley stacking fault formation inside the facet; Type 2: Stacking fault formation via 2D nucleation; Type 3: Frank + Shockley (S) stacking fault formation due to deflection of threading mixed dislocation (TMD) by macrosteps; Type 4: “Carrot” defect formation related to overgrowth of the terrace formed by separation of 3c/4 and c/4 step risers after deflection of a TMD by vicinal steps. The results help further reduction of defect generation in 4H-SiC substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Stress evolution and creep deformation in solid-oxide electrolysis cell systems – Dynamic modeling and multi-objective optimization to maximize stack life and efficiency

Here, this study develops a thermal stress model of solid-oxide electrolysis cells (SOECs) including a model for creep strain and failure probability that is integrated with a dynamic plant-wide model of a hydrogen production process. Uncertainties in key material properties of the cell are quantified to assess their impact on stress profile variability. The oxygen electrode is found to have about 10 times higher failure probability compared to the fuel electrode. The study shows that if the stack operation is not optimized, cycling operation would lead to stress build-up eventually leading to catastrophic failure. A dynamic optimization problem is set up for obtaining the optimal operational profile considering a variable hydrogen production rate. Due to the tradeoff between the efficiency and stress build-up, the dynamic optimization problem is multi-objective. It is observed that the optimizer can considerably reduce the stress build-up (i.e., can increase the stack life) albeit at the cost of a lower efficiency thus exhibiting strong tradeoffs between capital and operating costs. For example, if the stack would be replaced in 0.5 yr, specific energy requirement would be 48.5 kWh/kg H 2 while for a stack replacement time of about 6 yr, the specific energy requirement rises by about 4.2 %.

SOEC↗
DOE OSTI2026

NOCI-F Electronic Couplings in Assemblies of Indolonaphthyridine Molecules: From Dimers to the Full Stack

Key electronic processes related to molecular excitonic states of finite stacks of indolonaphthyridine molecules are analyzed via the non-orthogonal configuration interaction with fragments (NOCI-F) method. Indolonaphthyridine is an organic chromophore that can undergo several electronic photoexcitation-related intermolecular processes, such as exciton and electron transfer. The structures studied here are noncrystalline arrangements built as either ordered stacks of indolonaphthyridine or stacks extracted from molecular dynamics simulations including thermal disorder. Taking dimers or trimers from either model, we performed CASSCF and NOCI-F calculations to quantify the intermolecular electronic couplings governing singlet fission, excited singlet and triplet diffusion, and hole and electron diffusion processes. Also, comparing the results for the different models, we studied the effect of structural disorder and distortion on these couplings. Finally, we present a newly developed, advanced postanalysis tool. It takes the NOCI-F data as input to carry out a multifragment full Hamiltonian procedure that involves the complete stack, providing physical information not available from the dimer/trimer models, hence giving access to additional insight into the material’s properties.

coupling reactions↗
DOE OSTI2024

Spontaneous emergence of straintronics effects and striped stacking domains in untwisted three-layer epitaxial graphene

Emergent electronic phenomena, from superconductivity to ferroelectricity, magnetism, and correlated many-body band gaps, have been observed in domains created by stacking and twisting atomic layers of Van der Waals materials. In graphene, emergent properties have been observed in ABC stacking domains obtained by exfoliation followed by expert mechanical twisting and alignment with the desired orientation, a process very challenging and nonscalable. Here, conductive atomic force microscopy shows in untwisted epitaxial graphene grown on SiC the surprising presence of striped domains with dissimilar conductance, a contrast that demonstrates the presence of ABA and ABC domains since it matches exactly the conductivity difference observed in ABA/ABC domains in twisted exfoliated graphene and calculated by density functional theory. The size and geometry of the stacking domains depend on the interplay between strain, solitons crossing, and shape of the three-layer regions. Interestingly, we demonstrate the growth of three-layer regions in which the ABA/ABC stacking domains self-organize in stable stripes of a few tens of nanometers. The growth-controlled production of isolated and stripe-shaped ABA/ABC domains open the path to fabricate quantum devices on these domains. These findings on self-assembly formation of ABA/ABC epitaxial graphene stripes on SiC without the need of time-consuming and nonscalable graphene exfoliation, alignment, and twisting provide different potential applications of graphene in electronic devices.

Rejhon, Martin (ORCID:000000017775487X)↗
DOE OSTI2026

Stacked reverberation mapping of high-redshift quasars in DESI. I. Feasibility analysis

The broad-line region of quasars has long been probed by reverberation mapping techniques that measure time lags between continuum and broad emission-line variations. Stacked reverberation mapping has been proposed as a less observationally expensive alternative to traditional methods. This ensemble approach also reduces biases from small-number statistics. The Dark Energy Spectroscopic Instrument (DESI) is conducting the most extensive spectroscopic survey of quasars to date. We create mock light curves emulating expected DESI quasar observations at redshifts $1.48\lt z\lt 5.2$ and luminosities $44.68 \le \log \lambda L_{1350 \mathring{\rm A}{}} / \mathrm{erg\, s^{-1}} \le 45.99$ to test stacked reverberation mapping feasibility using sparse spectroscopic data paired with well-sampled photometric data. The pipeline, using the lag estimation code JAVELIN (Just Another Vehicle for Estimating Lags In Nuclei), successfully recovers the simulated C IV lags within 1σ of the true values using spectroscopic light curves composed of only a few spectral epochs (2–10) with irregular cadences. We investigate how observational factors, including C IV flux error magnitude, number of stacked quasars, and spectral epoch count, affect performance. This work motivates a pathway for future stacked reverberation mapping projects with large-scale spectroscopic surveys of quasars having $\ge 2$ spectroscopic observations. Our results suggest an economical alternative for constraining and extending the radius–luminosity relation to higher redshifts and luminosities. Subsequently, this relation can be employed more reliably in single-epoch black hole mass measurements and quasar cosmology in these distant regimes.

quasars: general, quasars: supermassive black hole↗
DOE OSTI2025

Stacked-mosaic amplifier and diode delivery concept for kJ-class inertial fusion energy laser driver

We report on a laser amplifier architecture designed as a modular element for scaling to multi-megajoule laser facilities intended for inertial fusion energy (IFE) power plants. This kilojoule-class module features a stacked mosaic of gain media integrated with a diode delivery system for efficient optical pumping of the mosaic-structured gain medium, enabling high-repetition-rate operation at high wall plug efficiencies, necessary for an IFE driver. Details of a diode delivery system capable of pumping the mosaic architecture are presented. Comprehensive numerical modeling demonstrates that the stacked-mosaic approach reduces transverse gain by five orders of magnitude compared to a conventional full-aperture Yb:YAG based amplifier, substantially suppressing transverse amplified spontaneous emission (TASE) and enabling enhanced longitudinal energy extraction. Detailed analysis of thermal management and wavefront distortion in a 4 × 4 mosaic array indicates that temperature gradients and thermally induced aberrations are effectively controlled using gas cooling and commercially available phase-plate and deformable mirror technologies. We further discuss the applicability of a stacked-mosaic architecture to direct-drive IFE schemes, where broad spectral bandwidth is critical, and its compatibility with frequency conversion modules for up-conversion to blue wavelengths. Finally, an example point design for a 10 kJ, 10 Hz Yb:YAG module operating at 175 K with wall-plug efficiency exceeding 10 % is presented, underscoring the feasibility of this approach for next-generation high-energy lasers for IFE drivers. The results establish the stacked-mosaic amplifier as a scalable, robust platform not only for IFE but also for a broad range of advanced scientific and industrial laser applications.

Lasers↗
DOE OSTI2026

Semi-Transparent Perovskite Solar Cells in a Stacked Tandem Module: Cooperative Research and Development Final Report, CRADA Number CRD-19-00810

This project seeks to develop device design, materials composition, and processing tools and parameters to fabricate semi-transparent perovskite solar cells and modules for application in stand-alone products or added to other solar cells in a mechanically stacked tandem configuration. This technology presents significant advanced manufacturing challenges and opportunities in getting to scale, including development of perovskite inks, scalable perovskite and heterojunction deposition and annealing processes, heterojunction composition, transparent electrode composition and deposition process, anti-reflection layer composition and deposition process, and cell to module integration processes. Modification 5: The proposed project seeks to develop device design, materials composition, and processing tools and parameters to fabricate semi-transparent perovskite solar cells and modules for application in stand-alone products or added to other solar cells in a mechanically-stacked tandem configuration. This technology presents significant advanced manufacturing challenges and opportunities in getting to scale, including development of perovskite inks, scalable perovskite and heterojunction deposition and annealing processes, heterojunction composition, transparent electrode composition and deposition process, passivation layers including in module scribes, anti-reflection layer composition and deposition process, and cell to module integration processes. Advanced metrology and characterization will be performed on perovskite films, cells and module. Furthermore, we will examine module or materials recycling for circular economy considerations. Modifcation 6: Gigahertz frequency microwave pump-probe spectroscopies are highly sensitive to thin film semiconductor photoconductivity of individual and stacks of layers that comprise perovskite solar cells. As such, these techniques will be used to qualify reproducibility and quality correlations during the manufacturing process. Modification 7: Mechanical adhesion of top contacts within perovskite modules significantly impacts the durability of the module when exposed to accelerated degradation testing. The adhesion between the perovskite/transport layer interface and the transport layer/top contact interface are both very sensitive small changes in processing. ALD processing conditions of the transport layer will be tuned to optimize the mechanical adhesion within the perovskite module stack.

14 SOLAR ENERGY↗
DOE OSTI2026

Achieving 20.1% Efficiency in Organic Solar Cells Through Interconnected Fibrillar Networks via Local Molecular Stacking

ABSTRACT The performance of organic solar cells (OSCs) is governed by how molecular packing evolves into interconnected networks that facilitate exciton dissociation and charge transport. Using an all‐small‐molecule blend DR3TSBDT:Y6 as a model system, we study how local molecular stacking evolves into performance‐relevant morphology during solvent vapor annealing (SVA) and subsequent thermal annealing (TA). SVA promotes end‐to‐end stacking of amorphous acceptors to form interconnected fibrils, while TA compacts inter‐fibril spacing without disrupting favorable local order. Such molecular‐to‐morphological refinements broaden light absorption, enhance charge transport, and markedly improve device efficiency. Extending this approach to additional blend systems (D18:Y6, D18:L8‐BO, and DR3TSBDT:L8‐BO) yields similar structural evolution and performance gains, with the D18:L8‐BO system achieving up to 20.10% PCE. Our study establishes control over local stacking in amorphous acceptors into fibrillar networks as a general and effective route to realize high‐performance OSCs.

Wu, Junying↗
DOE OSTI2025

Efficient Perovskite Solar Cells Achieved via Rapid Photonic Annealing of all Stacking Layers: Unveiling the Crystallization Energy Window

In this study, we report high-performance perovksite solar cells (PSCs) with rapid photonic annealing (RPA) of all stacking layers, enabled by ultraviolet (UV) light-emitting diode (LED) sources, to replace lengthy and energy-intensive thermal annealing (TA). The UV-LED annealing technique allows for layer-specific annealing, where the selected light source provides a precise UV wavelength for maximizing the amount of light absorption by the target layer. The disparity in optical absorption between the target layer and the underlying films allows the stack of the underlying films to remain relatively unaffected, making this process ideal for heating sensitive substrates. Along with a systematic investigation into the layer-specific annealing mechanism of RPA, the results demonstrated that this UV-LED-based photonic annealing of all stacking layers (7 s for perovskite absorber) can produce PSCs with the power conversion efficiency (PCE) of over 23%, the highest reported among optically annealed PSCs. Moreover, the RPA device retains over 80% of the initial PCE over 1000 h under continuous 1 sun illumination at 55 °C and 30%–60% relative humidity (RH), while TA control device drops to 50% of its initial efficiency. Furthermore, these findings represent significant strides toward achieving rapid, cost-effective, and scalable manufacturing of commercial perovskite photovoltaics (PV).

14 SOLAR ENERGY↗
DOE OSTI2025

Pressure-Induced Stacking of Rhodamine 6G Molecules

Extended conjugation of molecular π systems are of great significance for solar cells and organic light-emitting diodes as these can serve as new light absorbing and emitting chromophores. This research demonstrates the potential of using pressure and solvent environment to create larger assemblies of molecular π-conjugated systems. Here, we selected rhodamine 6G (Rh6G) to study the pressure-induced stacking of molecules in three different solvents: methanol (MeOH), isopropanol (IPA), and 16:3:1 mixture of methanol: ethanol: water (MEW). Absorption, emission, and fluorescence lifetime were studied at pressures up to 11.38 GPa. We found that pressure-induced stacking mechanisms can present solvent dependence: high pressures tend to create emissive Haggregates in MeOH and MEW, but excimers in IPA. This work guides and demonstrates routes to stacking of organic molecules using high pressures and provides fundamental insights into the formation of extended conjugation π systems.

Johnson, Kade [Univ. of Texas at San Antonio, TX (↗