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Results for “static transfer switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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DOE OSTI2026

Modeling Framework for Data Center

This chapter highlights the critical need for advanced modeling of data centers due to their rapidly increasing energy consumption and impact on grid reliability. Driven by the demand for AI applications, data centers are projected to consume a significant portion of US energy by 2028, putting stress on an already challenged power grid. The chapter emphasizes the importance of "fast" time-scale models to understand the dynamic interactions between data centers and the grid, especially given the rapid power fluctuations of AI workloads. It outlines a modeling framework that includes both offline and real-time EMT domain simulations, detailing the necessary representations for various components like utility interfaces, transformers, IT loads, UPS, cooling loads, Battery Energy Storage Systems (BESS), generators, protection systems, and higher-level control systems. While standard simulation tools like PSCAD offer basic models, custom development is often required to accurately capture the unique and fast-changing behaviors of modern data centers. The chapter also discusses key metrics and test cases for validating these models, focusing on transient load responses, protection relay coordination, and demand flexibility. Finally, it addresses the challenges of modeling large-scale data centers, such as computational complexity and the trade-off between model fidelity and practicality, suggesting hybrid modeling approaches as a solution. The overarching goal is to create a robust framework that helps assess data center impacts on grid stability, identify vulnerabilities, and inform the development of standards for reliable integration of these large loads into the bulk power system.

25 ENERGY STORAGE↗
DOE OSTI2024

Evaluation of Converter Performance Considering Static and Dynamic Device Part-to-Part Variability

This paper presents a methodology to incorporate and analyze the impact of semiconductor device part-to-part variation on power converter performance. By integrating extensive static and dynamic device characterization data with an automated compact model generation process that reflects manufacturing variability, device models with inherent variability features are utilized in converter simulations for a comprehensive assessment of performance impacts. The traditional converter performance evaluation process typically yields fixed efficiency values, often dismissing the inherent part-to-part variability caused by the manufacturing process of semiconductor devices. To address this limitation, a large population of devices was characterized to capture variations in static parameters-such as transfer, output, and capacitance characteristics-as well as dynamic behaviors, including switching losses. This data-driven approach enables the development of individual compact models, which were then integrated into converter simulations to evaluate efficiency ranges rather than single point estimated values. The converter simulation results show that part-to-part component variation can lead to significant efficiency deviations, exceeding several percentage points in high-power conversion applications. By offering a more accurate representation of converter behavior under real-world manufacturing conditions, this methodology enables designers to anticipate performance variability, improving the robustness of power converter designs.

device characterization↗
DOE OSTI2025

Parameter extraction for a SPICE model of an hTron superconducting thermal switch

Efficiently simulating large circuits is crucial to the development of superconducting nanowire-based electronics. However, current simulation tools for this technology are not adapted to the scaling of circuit size and complexity. We focus on the multilayered heater-nanocryotron (hTron), a promising superconducting nanowire-based switch used in applications such as superconducting nanowire single-photon detector readout. Previously, the hTron was modeled using traditional finite-element methods, which fall short in simulating systems at a larger scale. An empirical-based method would be better adapted to this task, enhancing both simulation speed and agreement with experimental data. In this work, we perform switching current and activation delay measurements on 17 hTron devices. We then develop a method for extracting physical fitting parameters used to characterize the devices. We build a SPICE behavioral model that reproduces the static and transient device behavior using these parameters, and validate it by comparing its performance to a model developed in prior work, showing an improvement in simulation time by several orders of magnitude. Furthermore, our model provides circuit designers with a tool to help understand the hTron’s behavior during all design stages, thus enabling broader use of the hTron across various new areas of application.

Caloritronics↗