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At least 19 records

New Empirical Formulation for the Sublimational Breakup of Graupel and Dendritic Snow

Abstract Ice fragments are generated by sublimation of ice particles in subsaturated conditions in natural clouds. Conceivably, such sublimational breakup would be expected to cause ice multiplication in natural clouds. Any fragment that survives will grow to become ice precipitation that may sublimate and fragment further. As a first step toward assessing this overlooked process, a formulation is proposed for the number of ice fragments from sublimation of ice particles for an atmospheric model. This is done by amalgamating laboratory observations from previously published studies. The concept of a “sublimated mass activity spectrum” for the breakup is applied to the dataset. The number of ice fragments is determined by the relative humidity over ice and the initial size of the parent ice particles. The new formulation applies to dendritic crystals and heavily rimed particles only. Finally, a thought experiment is performed for an idealized scenario of subsaturation with in-cloud descent. Scaling analysis yields an estimate of an ice enhancement ratio of about 5 (10) within a weak deep convective downdraft of about 2 m s −1 , for an initial monodisperse population of dendritic snow (graupel) particles of 3 L −1 and 2 mm. During descent, there is a dynamic equilibrium between continual emission of fragments and their depletion by sublimation. A simplified bin microphysics parcel model exhibits this dynamical quasi equilibrium, consistent with the thought experiment. The fragments have average lifetimes of around 90 and 70 s for dendrites and graupel, respectively. Sublimational breakup is predicted to cause significant secondary ice production.

54 ENVIRONMENTAL SCIENCES↗

Sublimation and oxidation measurements of graphite and carbon black at high temperatures in a shock tube using absorption imaging and thermal emission

Surface mass loss rates due to sublimation and oxidation at temperatures of 3000–7000 K have been measured in a shock tube for graphite and carbon black (CB) particles. Diagnostics are presented for measuring surface mass loss rates by diffuse backlit illumination extinction imaging and thermal emission. Here, the surface mass loss rate is found by regression fitting extinction and emission signals with an independent spherical primary particle assumption. Measured graphite sublimation and oxidation rates are reported to be an order of magnitude greater than CB sublimation and oxidation rates. It is speculated that the difference between CB and graphite surface mass loss rates is largely due to the primary particle assumption of the presented technique which misrepresents the effective surface area of an aggregate particle where primary particles overlap and shield inner particles. Measured sublimation rates are compared to sublimation models in the literature, and it is seen graphite shows fair agreement with the models while CB underestimates, likely a result of the particle shielding affect not being considered in the sublimation model.

36 MATERIALS SCIENCE↗

Comparative analysis of sublimation and thermal decomposition of TATB

This experimental study investigated the effects of confinement, starting mass, and heating rate on TATB thermal decomposition and sublimation using a combined Thermo-Gravimetric Analyzer and Differential Scanning Calorimetry (TGA/DSC) instrument. The confinement of volatile products was varied using different pinhole sizes with TGA/DSC pans. The measurements showed the open pan experiments without lids/pinholes resulted in complete sublimation of TATB between 320 °C and 360 °C. The heat of sublimation was determined to be 176 kJ/mol (42 kcal /mol), consistent with literature data obtained from other experimental techniques. The use of pinholes suppressed the sublimation of TATB such that the decrease in pinhole size resulted in 1) an increase in the enthalpy of reaction and an increase in the amount of carbonaceous material remaining at the end of decomposition, and 2) convergence of the two peak temperatures corresponding to maximum heat flow and maximum weight loss. Also, a transition from a two-exotherm thermal decomposition behavior towards a single-exotherm occurred as the pinhole size was decreased for a given starting mass or as the starting mass was increased for a given pinhole size. These results indicate the kinetics of TATB sublimation, TATB thermal decomposition, and gas diffusion out of a TGA/DSC pan can all compete and result in significantly different enthalpies, amounts of remaining materials, and peak temperatures depending on the pinhole size and starting mass used in the measurements. Furthermore, the results also indicate precise control of process variables (pinhole size, starting mass, and heating rate) in TGA/DSC measurements is required for thermal safety assessment of explosives.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Sublimation temperature sensor for temperature locale

The sublimation temperature sensor (or “sublime sensor”) provides a continuum of measurement locations in which certain maximum temperatures are achieved during a heat up/cool down cycle. A predetermined material is encapsulated within a vacuum-sealed, non-volatile long tube (i.e., both ends capped and L$\gg$ D). This assembly is then inserted and centered into a heated zone, such as a furnace, exhaust pipe, or reactor. As the temperature increases, the material will sublimate (i.e., a process of having both the solid and gaseous states of matter simultaneously present) and will begin to fill the void - moving outward in both directions toward the ends of the tube. Once beyond the elevated temperatures, the gas will de-sublimate (i.e., deposition) onto the inner wall of the tube. The desired result of the sensor is the ring of material that develops over a relatively short period of time. This material deposit can be equated with temperature at an exact location. There is no need to interpolate and/or extrapolate for the desired measurement. Accuracy has been recorded for temperature locations on the range of ±2 mm over a 1 m span. Likewise, the precision of the measurement is ±0.2% the overall sensor domain. Furthermore, individual tubes with unique materials and pressures can be bundled together to provide a complete temperature profile of the heated zone.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Sublimation of Snow Field Campaign Report

Snow is a vital part of water resources, but sublimation may remove 10% to 90% of snowfall from the system. The processes controlling sublimation span multiple scales of measurement and multiple disciplinary fields. Due to a critical lack of reliable direct measurements of snow sublimation, we do not fully understand the physics that govern current rates of sublimation, let alone how those amounts might change with the climate.

54 ENVIRONMENTAL SCIENCES↗

Unusual Li 2 O sublimation promotes single-crystal growth and sintering

Li 2 O is rarely used for cathode material synthesis due to its high melting point (1,438 °C). Here we discover that Li 2 O can sublimate at 800-1,000 °C under ambient pressure, opening new possibilities for cathode synthesis. We propose a mechanism that enables synthesis of single crystals-such as LiNi 0.8 Mn 0.1 Co 0.1 O 2 (NMC811) or LiNi 0.9 Mn 0.05 Co 0.05 O 2 (NMC90)-without direct contact with Li 2 O salts. We show that Li 2 O vapour successfully converts spent polycrystalline NMC811 into segregated single crystals without milling or post-treatment. The Li 2 O vapour, derived from Li 2 O solids, diffuses rapidly and reacts with precursors, mimicking a molten-salt environment, which facilitates single-crystal growth. The chemical lithiation process continuously drives Li 2 O sublimation, sintering the crystals. Single crystals derived from Li 2 O and fresh precursors or spent polycrystals exhibit outstanding cycling after 1,000 cycles in full cells. The demonstrated Li 2 O sublimation and its universal role in promoting single-crystal growth provides an effective approach for single-crystal synthesis, scale-up and recycling.

25 ENERGY STORAGE↗

O 2 Oxidation and Sublimation Kinetics of Single Silicon Nanoparticles at 1200–2050 K: Variation of Reaction Rates, Evolution of Structural and Optical Properties, and the Active-to-Passive Transition

Sublimation and O 2 etching kinetics for a series of individual silicon (Si) nanoparticles (NPs) were studied for NP temperatures (T NP ) from 1200 to 2050 K, using a single NP mass spectrometry technique. Sublimation was significant for T NP > 1700 K, with rates reasonably well fit to Arrhenius kinetics, but evolving, particularly during initial heating. O 2 etching efficiencies varied from NP-to-NP and with changing T NP , but also evolved dramatically over time. For T NP ≤ 1500 K, NPs were observed to passivate after losing 30 to 50% of the initial NP mass. At higher T NP , etching efficiency decreased over time, but never passivated. Interestingly, bulk Si passivation has not been observed for the range of T NP and O 2 pressures used here, and a model was developed to test the effects of several NP-specific mechanistic parameters on both the initial and time-dependent etching behavior. As a result, the optical properties of the hot NPs were also found to evolve as the NPs etched, particularly during the initial fast mass loss, and correlations between emission intensities and etching kinetics were examined.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

An Approach for Simulating Transport of Nonspherical, Sublimating Particles in Rarefied Gas Flows via the Direct Simulation Monte Carlo Method

This paper extends the particle Green’s function approach of Gallis et al. [Phys. Fluids 13, 3482–3492 (2001)] to compute the force and heat transfer on nonspherical, sublimating particles in rarefied gas flows. Green’s functions are derived for rods and plates, which are representative of ice particle shapes, and a numerical procedure is developed for computing the Green’s functions for a general discretized convex shape. Additionally, a sublimation model is developed to simulate the evolution of ice particles in rarefied gas flows. These models are implemented in a direct simulation Monte Carlo code and demonstrated for the case of ice-particle-laden hypersonic flow over a ramp.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Continuum laser absorption spectroscopy of C 2 (a 3 Π u ) in a sublimating cloud of carbon black

A direct optical absorption diagnostic has been developed for rotationally resolved measurements of diatomic carbon (a 3 Π u →d 3 Π g (0,0) and (1,1)) at a repetition rate of 525 kHz and resolution of 7.3 pm over the range of 511.1–514.1 nm. The diagnostic utilizes a high-power pulsed continuum laser light source dispersed in a spectrograph and imaged by a high-speed camera. Measurements have been performed that capture the temporal evolution of C 2 number density and temperature of a cloud of carbon black sublimating in shock heated gas at high temperature and pressure (T = 5500 K, P = 3.7 atm). A simultaneous light absorption measurement of the condensed phase enables comparisons of the gaseous C 2 number density to the condensed phase mass. The continuum laser absorption diagnostic is applied to C 2 in this work but shows promise in being a simple “drop-in” system for absorption spectroscopy in the visible range at rapid repetition rates and high dispersion, filling an important gap for laser diagnostic systems.

Willhardt, Colton Dean [Univ. of Illinois at Urban↗

Characterization of n-Type Iodine-Doped and Indium-Doped CdTe/Cd-Se-Te Thin Films Fabricated by Close-Spaced Sublimation Epitaxy

In this study, n-type CdTe thin films, specifically iodine-doped CdTe (CdTe:I), indium-doped CdTe (CdTe:In), and indium-doped Cd-Se-Te (CST:In), were synthesized using close-spaced sublimation epitaxy (CSSE). Characterization techniques secondary ion mass spectrometry (SIMS), electron backscatter diffraction (EBSD), Hall-effect measurements, and time-resolved photoluminescence (TRPL) were employed to analyze the chemical, structural, and electronic properties of these materials. The results indicated epitaxial single crystal CSSE films grew on the single crystal substrates, with carrier density ranging from 10^14 - 10^16 cm -3 , and after post-annealing, the minority-carrier lifetimes reach near the radiative limit. Additionally, a preliminary exploration of homojunction structures with an n- type (CdTe:In /CST:In /CdTe:I) /CdTe:P /Cu /Mo configuration was performed. The best device performance was achieved with CdTe:I including CdS aiding in band alignment, resulting in a power conversion efficiency (..eta..) of 2.61% with open circuit voltage (Voc) of 850 mV, fill factor (FF) of 47.8%, and short-circuit current (Jsc) of 6.44 mA/cm 2 . The observed low Jsc and efficiency may be attributed to a buried junction and a poor interface, due to dopant interdiffusion. Consequently, further investigations focusing on interface optimization, diffusion blocking, and reduced recombination through passivation, are crucial to enhancing the efficiency of CSSE CdTe homojunction devices in the future.

cadmium compounds↗

Summary of Multiphysics Modeling for Sublimation Mass Transfer

This report summarizes the effort to develop a multiphysics modeling framework for sublimation mass transfer processes. The aim of the project was to develop a multiphysics code capable of predicting phase change between solid and gas in a closed container, and the movement of material within such a container when exposed to various exterior environmental conditions. Two modeling frameworks were developed towards this aim: one with a high-fidelity computational fluid dynamics (CFD) structure, and the other as a fast reduced-order model. Ultimately, both attempts were unsuccessful due to instabilities in the code and physical processes for which there is no adequate numerical representation. Both modeling attempts are briefly detailed before providing a brief survey of recent updates in the literature, and a recommendation for future work on this subject.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electro-Optical Characterization of Arsenic-Doped CdSeTe and CdTe Solar Cell Absorbers Doped in-situ During Close Space Sublimation

Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.

cadmium telluride↗

Thermally induced structural evolution and nanoscale interfacial dynamics in Bi-Sb-Te layered nanostructures

Layered chalcogenides, including Bi-Sb-Te ternary alloys and heterostructures, are renowned as thermoelectric and topological insulators and have recently been highlighted as plasmonic building blocks beyond noble metals. Here, we conduct joint in situ transmission electron microscopy and density functional theory calculations to investigate the temperature-dependent nanoscale dynamics and interfacial properties, identifying the role of native defects and edge configurations in the anisotropic sublimation of Bi 2 Te 3 -Sb 2 Te 3 heterostructures and Sb 2-x Bi x Te 3 alloys. We report structural dynamics, including edge evolution, layer-by-layer sublimation, and the formation and coalescence of thermally induced polygonal nanopores. These nanopores are initiated by preferential dissociation of tellurium, reducing thermal stability in heterostructures. Triangular and quasi-hexagonal configurations dominate nanopore structures in heterostructures. Our calculations reveal antisite defects (Te Sb and Te Bi ) as key players in defect-assisted sublimation. These findings enhance our understanding of nanoscale dynamics and assist in designing tunable low-dimensional chalcogenides.

Bi2Te3-Sb2Te3 heterostructure↗

Oxidation of Silicon Carbide with Atomic Oxygen through the Passive-to-Active Transition

The inelastic and reactive scattering dynamics of O( 3 P) atoms on a 6H-silicon carbide (SiC) surface were investigated as a function of temperature with a molecular beam-surface scattering technique that employed a rotatable mass spectrometer detector. One set of experiments used a pulsed hyperthermal beam that produced ~8 km s –1 O atoms, and another set of experiments used a continuous beam that contained O atoms with a nominal velocity of ~2 km s –1 . When exposed to the relatively low-flux, pulsed hyperthermal O-atom beam, a passive oxide layer on the SiC that formed at lower temperatures decomposed as the temperature increased above 1673 K. Instead of entering an active oxidation regime, a graphitic layer formed on the surface and largely protected the underlying SiC from incoming O atoms. Investigation of the oxide decomposition without O-atom bombardment revealed volatile Si and SiO products at the moment that the oxide decomposed, implying that Si sublimation occurs concurrently with oxide decomposition. In the experiment with the continuous (higher flux) O-atom beam, volatile SiO and CO products were observed after the passive oxide decomposed, indicating that active oxidation was reached. Finally, the results of this study provide evidence for the importance of Si sublimation within the active oxidation regime. Above the passive-to-active transition temperature, Si sublimation is an ongoing process, and continuous active oxidation will only occur if sufficient oxygen reacts with the surface to produce SiO more quickly than a graphitic layer can form. Thus, accurate models of SiC ablation by atomic oxygen must account for multiple competing mechanisms that depend on the surface temperature and incident O-atom flux.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗