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NASA NTRS2010

Planar Submillimeter-Wave Mixer Technology with Integrated Antenna

High-performance mixers at terahertz frequencies require good matching between the coupling circuits such as antennas and local oscillators and the diode embedding impedance. With the availability of amplifiers at submillimeter wavelengths and the need to have multi-pixel imagers and cameras, planar mixer architecture is required to have an integrated system. An integrated mixer with planar antenna provides a compact and optimized design at terahertz frequencies. Moreover, it leads to a planar architecture that enables efficient interconnect with submillimeter-wave amplifiers. In this architecture, a planar slot antenna is designed on a thin gallium arsenide (GaAs) membrane in such a way that the beam on either side of the membrane is symmetric and has good beam profile with high coupling efficiency. A coplanar waveguide (CPW) coupled Schottky diode mixer is designed and integrated with the antenna. In this architecture, the local oscillator (LO) is coupled through one side of the antenna and the RF from the other side, without requiring any beam sp litters or diplexers. The intermediate frequency (IF) comes out on a 50-ohm CPW line at the edge of the mixer chip, which can be wire-bonded to external circuits. This unique terahertz mixer has an integrated single planar antenna for coupling both the radio frequency (RF) input and LO injection without any diplexer or beamsplitters. The design utilizes novel planar slot antenna architecture on a 3- mthick GaAs membrane. This work is required to enable future multi-pixel terahertz receivers for astrophysics missions, and lightweight and compact receivers for planetary missions to the outer planets in our solar system. Also, this technology can be used in tera hertz radar imaging applications as well as for testing of quantum cascade lasers (QCLs).

Chattopadhyay, Gautam↗
NASA NTRS2010

NASA Tech Briefs, May 2010

Topics covered include: Instrument for Analysis of Greenland's Glacier Mills Cryogenic Moisture Apparatus; A Transportable Gravity Gradiometer Based on Atom Interferometry; Three Methods of Detection of Hydrazines; Crossed, Small-Deflection Energy Analyzer for Wind/Temperature Spectrometer; Wavefront Correction for Large, Flexible Antenna Reflector; Novel Micro Strip-to-Waveguide Feed Employing a Double-Y Junction; Thin-Film Ferro Electric-Coupled Microstripline Phase Shifters With Reduced Device Hysteresis; Two-Stage, 90-GHz, Low-Noise Amplifier; A 311-GHz Fundamental Oscillator Using InP HBT Technology; FPGA Coprocessor Design for an Onboard Multi-Angle Spectro-Polarimetric Imager; Serrating Nozzle Surfaces for Complete Transfer of Droplets; Turbomolecular Pumps for Holding Gases in Open Containers; Triaxial Swirl Injector Element for Liquid-Fueled Engines; Integrated Budget Office Toolbox; PLOT3D Export Tool for Tecplot; Math Description Engine Software Development Kit; Astronaut Office Scheduling System Software; ISS Solar Array Management; Probabilistic Structural Analysis Program; SPOT Program; Integrated Hybrid System Architecture for Risk Analysis; System for Packaging Planetary Samples for Return to Earth; Offset Compound Gear Drive; Low-Dead-Volume Inlet for Vacuum Chamber; Simple Check Valves for Microfluidic Devices; A Capillary-Based Static Phase Separator for Highly Variable Wetting Conditions; Gimballing Spacecraft Thruster; Finned Carbon-Carbon Heat Pipe with Potassium Working Fluid; Lightweight Heat Pipes Made from Magnesium; Ceramic Rail-Race Ball Bearings; Improved OTEC System for a Submarine Robot; Reflector Surface Error Compensation in Dual-Reflector Antennas; Enriched Storable Oxidizers for Rocket Engines; Planar Submillimeter-Wave Mixer Technology with Integrated Antenna; Widely Tunable Mode-Hop-Free External-Cavity Quantum Cascade Laser; Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise; Using Whispering-Gallery-Mode Resonators for Refractometry; RF Device for Acquiring Images of the Human Body; Reactive Collision Avoidance Algorithm; Fast Solution in Sparse LDA for Binary Classification; Modeling Common-Sense Decisions in Artificial Intelligence; Graph-Based Path-Planning for Titan Balloons; Nanolaminate Membranes as Cylindrical Telescope Reflectors; Air-Sea Spray Airborne Radar Profiler Characterizes Energy Fluxes in Hurricanes; Large Telescope Segmented Primary Mirror Alignment; and Simplified Night Sky Display System.

Source record↗
NASA NTRS1999

THz Electronics

Explore the source record for details and available documents.

submillimeter wave technology mixer↗
NASA NTRS2010

Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows rightward to the diodes. Because the RF is in a quasi- TEM (suspended, microstrip-like) mode, it impinges on the diodes in an anti-parallel mode that does not couple to the waveguide mode. This isolates the LO and RF signals. This operation is similar to a cross-bar mixer used at low frequencies, except the RF signal enters through the back-short end of the waveguide rather than through the side. The RF probe also conveys the down-converted intermediate frequency (IF) signal out to an off-chip circuit board through a simple LC low-pass filter to the left as indicated. The bias is brought to the diodes through a bypass capacitor at the top.

Siegel, Peter↗
NASA NTRS1991

Report of the heterodyne submillimeter-wave sensors panel

After reviewing the science goals of the Astrotech 21 mission set, and comparing the resulting receiver performance requirements with existing technology, the panel determined that there were significant unmet requirements in four areas: local oscillator power and mixer sensitivity in the Tera-Hz regime, infrared spectrometer channel count, and array technology in any form. A comprehensive development plan has been prepared to provide these capabilities in the time frame needed before technology freeze dates of the respective missions. It was also noted that development of these capabilities has immense payoff for future astrophysics missions, as it opens entire new areas of spectroscopy and imaging in the critical submillimeter wave regime rich in molecular transitions.

Wilson, Robert↗
NASA NTRS1991

Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

Leduc, H. G.↗
NASA NTRS1992

Submillimeter wave detection with superconducting tunnel diodes

Superconductor-Insulator-Superconductor (SIS) diodes are the detector elements in the most sensitive heterodyne receivers available from 100 to 500 GHz. SIS mixers are the front end of radio astronomical systems around the world. SIS mixer technology is being extended to 1 THz and higher frequencies for eventual use on spaceborne astronomical experiments. Here is a short review of submillimeter SIS mixers. The role of impedance matching in the proper design of an SIS mixer is described. A variety of methods for achieving good impedance match at submillimeter frequencies are presented. The experimental state of the submillimeter SIS mixer art is described and summarized.

Wengler, Michael J.↗
NASA NTRS2010

Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems

Radisic, Vesna↗
NASA NTRS1983

Submillimeter-wave receivers - A status report

A development status assessment is presented for the work of U.S. and Western European research groups on heterodyne sub-mm receivers in the 300-1000 GHz frequency range. The applications driving sub-mm receiver and local oscillator source technologies are radio astronomy, atmospheric measurements, plasma diagnostics, and laboratory spectroscopy. Progress is concentrated in two areas, cooled Schottky diode mixers and solid state local oscillators employing frequency multipliers.

Wilson, W. J.↗
NASA NTRS2020

Antennas, Arrays, and Systems for Submillimter-Wave Radio Astronomy

In this paper we present the design and development of a 16-pixel submillimeter-wave array instrument using SIS technology. We show that this instrument concept demonstration and component development dramatically simplifies the fabrication, assembly, and integration of large focal plane arrays at these frequencies. This advancement is enabled by the innovative array architecture with silicon microlens based antenna arrays, highly sensitive SIS mixers at these frequencies, integrated SiGe BiCMOS based low-noise intermediate frequency (IF) amplifiers, and silicon micromachined packaging.

Chattopadhyay, Goutam↗
NASA NTRS1987

Technology for submillimeter wave remote sensing

NASA's sub-mm wave technology development program addresses emerging possibilities in spaceborne sensor design for what is one of the few unexplored regions of the spectrum, from 1.0 to 0.1 mm wavelengths. Astrophysics, earth atmosphere research and solar system exploration can all benefit from the development of such sensor capabilities. Technology status evaluations are presented for Shottky-diode and SIS mixers, solid state and backward wave oscillators, intermodulation frequency amplifiers, and digital autocorrelator and acoustooptic spectrometers.

Sokoloski, Martin M.↗
NASA NTRS2001

A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips

Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.

Bruston, J.↗
NASA NTRS2011

Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

Future remote sensing instruments will require focal plane spectrometer arrays with higher resolution at high frequencies. One of the major components of spectrometers are the local oscillator (LO) signal sources that are used to drive mixers to down-convert received radio-frequency (RF) signals to intermediate frequencies (IFs) for analysis. By advancing LO technology through increasing output power and efficiency, and reducing component size, these advances will improve performance and simplify architecture of spectrometer array systems. W-band power amplifiers (PAs) are an essential element of current frequency-multiplied submillimeter-wave LO signal sources. This work utilizes GaN monolithic millimeter-wave integrated circuit (MMIC) PAs developed from a new HRL Laboratories LLC 0.15- m gate length GaN semiconductor transistor. By additionally waveguide power combining PA MMIC modules, the researchers here target the highest output power performance and efficiency in the smallest volume achievable for W-band.

Fung, King Man↗
NASA NTRS1991

International Symposium on Space Terahertz Technology, 1st, University of Michigan, Ann Arbor, Mar. 5, 6, 1990, Proceedings

Problems, proposed solutions, and recent results related to the development of solid-state oscillators, detectors, mixers, diode multipliers, and antennas at THz frequencies are addressed. Individual topics considered include: submillimeter heterodyne remote sensing of upper atmospheric gases, planar dipole array antenna with an elliptical lens, twin slot antenna structures integrated with microbolometer detectors for 94-GHz imaging. Also discussed are: quantum-well and quantum-barrier diodes for generating submillimeter wave power, planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths, GaAs Schottky barrier varactor diodes for submillimeter wavelength power generation, planar doped barrier devices for subharmonic mixers.

Ulaby, Fawwaz↗
NASA NTRS2019

Picture this SELFI: Submillimeter Enceladus Life Fundamentals Instrument

The Submillimeter Enceladus Life Fundamentals Instrument (SELFI) is a passive remote sensing submillimeter heterodyne spectrometer being developed at NASA GSFC under NASA's Maturation of Instruments for Solar System Exploration (MatISSE) program. SELFI will advance submillimeter receiver technology by 1) investigating the chemical and isotopic compositions and corresponding densities of Enceladus' plume material, their vertical thermal structures, and the transport mechanisms within the plumes, and 2) characterizing the source regions from which the plumes emerge. The Enceladus plumes are important in the context of life and habitability of its subsurface ocean environment. SELFI remote sensing measurements will 1) measure the spatial and temporal variabilities in the plume chemical compositions, 2) provide insight in to Enceladus' subsurface ocean environment by monitoring H2O, HDO, d18O, and d17O, 3) constrain the oxidation state of the subsurface ocean using H2O2 and O3, and 4) utilize the SO2 and H2S spectral signatures to constrain the impact arising from both the sea-floor volcanoes and pre-biotic molecules. Moreover, the detection of the remaining molecular species (14 in total) is vital to improving the current state of knowledge of Enceladus' subsurface ocean habitability this also permits us to explore the chemical alteration processes arising from primordial volatiles that have been observed in comets. Lastly, SELFI's continuum observations enable the correlation between observed variations in plume activity with surface temperatures.SELFI is currently being developed under a technology maturation program that will advance the RF-to-digital electronics of a submillimeter-wave heterodyne spectrometer to simultaneously observe fourteen molecular species with resonances between 530 GHz and 600 GHz. SELFI will have fine radiometric resolution, high spectral resolution (resolving power R > 106), multiple continuum channels and a high dynamical range, necessary to map Enceladus across its 30 K to 250 K temperature range. Under the MatISSE program, SELFI will advance from TRL 4 to 6 four key technologies of the RF-to-digital subsystem, which are: 1) the RF low noise amplifier design; 2) the single-sideband (SSB) mixer and local oscillator; 3) the IF assembly down-converter that maps the fourteen species to 2 x 500 MHz bandwidth; and 4) the digital spectrometer electronics.

Racette, Paul↗
NASA NTRS2011

MMIC Replacement for Gunn Diode Oscillators

An all-solid-state replacement for high-frequency Gunn diode oscillators (GDOs) has been proposed for use in NASA s millimeter- and submillimeter-wave sensing instruments. Highly developed microwave oscillators are used to achieve a low-noise and highly stable reference signal in the 10-40-GHz band. Compact amplifiers and high-power frequency multipliers extend the signal to the 100-500-GHz band with minimal added phase noise and output power sufficient for NASA missions. This technology can achieve improved output power and frequency agility, while maintaining phase noise and stability comparable to other GDOs. Additional developments of the technology include: a frequency quadrupler to 145 GHz with 18 percent efficiency and 15 percent fixed tuned bandwidth; frequency doublers featuring 124, 240, and 480 GHz; an integrated 874-GHz subharmonic mixer with a mixer noise temperature of 3,000 K DSB (double sideband) and mixer conversion loss of 11.8 dB DSB; a high-efficiency frequency tripler design with peak output power of 23 mW and 14 mW, and efficiency of 16 and 13 percent, respectively; millimeter-wave integrated circuit (MMIC) power amplifiers to the 30-40 GHz band with high DC power efficiency; and an 874-GHz radiometer suitable for airborne observation with state-of-the-art sensitivity at room temperature and less than 5 W of total power consumption.

Crowe, Thomas W.↗
NASA NTRS1980

Submillimeter local oscillators for heterodyne spectroscopy

The major technological innovations in continuous wave (CW) submillimeter sources which are specifically suitable for application as local oscillators in heterodyne systems are reviewed. A description of the various sources is given which underscores the general principles and operating features for each type of device. Particular emphasis is placed on CW optically pumped lasers, which have had a dramatic impact as widely available sources of narrow linewidth coherent radiation. The state-of-the-art is summarized for these lasers and performance data are presented for several local oscillator packages. Optically pumped lasers are then compared and contrasted with other competing sources such as backward wave oscillators, IMPATT diodes, and Josephson junctions. By comparing their advantages and limitations for use as local oscillators, the potential applications of these different sources are projected. The prospects for increased tunability, reliability, and scalability are briefly considered, and several novel techniques for generating partially tunable radiation using Schottky diode mixers or CW Raman lasers are highlighted.

Danielewicz, E. J., Jr.↗