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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Toward Computation-Guided Design of Tunable Organic-Inorganic CdS Quantum Dot Binary Superlattices

Combining the advantages of structural programmability in sequence-defined biomimetic molecules and the controllable packing geometry in nanoparticle superlattices, we demonstrate a self-assembled organic-inorganic superlattice whose structure can be altered with the slightest change in the sequence of the organic counterpart. Here, oleate-coated CdS quantum dots (QDs) form a square-packed superlattice with a 1:1 molar equivalence of a di-block amphiphilic peptoid (Nbrpe6Dig) in chloroform. In contrast, no apparent structure is observed in the organic solvent alone. Based on theoretical evidence, we show that the assembly is a binary superlattice where both the CdS QDs and the peptoids serve as building blocks and further predict a correlation between the superlattice structure and the peptoid sequence. The computationally guided prediction is validated by experiments where superlattice transformation is observed with modified peptoids. The mechanism identified in our work inspires new ways to control and tune organic-inorganic hybrid nanomaterial self-assembly.

Qi, Xin↗
NASA NTRS1990

InAs/Ga(1-x)In(x)Sb superlattices for infrared detector applications

The successful growth of InAs/Ga(1-x)In(x)Sb superlattices and their optical and structural characterization is discussed. Samples were grown by molecular beam epitaxy at fairly low substrate temperatures (less than 400 C). Structural quality was assessed by reflection high energy electron difrraction, transmission electron microscopy, and x ray diffraction. Excellent structures were achieved for growth on thick, strain relaxed GaSb buffer layers on GaAs substrates, despite a residual threading dislocation density of 10(exp 9)cm(exp -2) originating at the GaSb/GaAs interface. Despite a lattice mismatch of 1.7 percent, InAs/Ga(0.75)In(0.25)Sb superlattices are observed to be free of misfit dislocations at the thicknesses examined here, owing to the close lattice match between the superlattice and GaSb, which evenly distributes compressive and tensile stresses between the InAs and Ga(0.75)In(0.25)Sb layers. Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strain-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, and are in agreement with the theoretical predictions of Smith and Mailhiot. Energy gaps of 80 to 250 meV (15 to 5 microns) have been measured for InAs/Ga(0.75)In(0.25)Sb superlattices with 45 to 25 A/25 A layer thickness. Results demonstrate that far-infrared cutoff wavelengths are compatible with the thin superlattice layers required for strong optical absorption in type-II superlattices.

Miles, Richard H.↗
DOE OSTI2026

Atomic-Scale Imaging Reveals Polar-π Interactions in Two-Dimensional Molecular Superlattices

Controlling coassembly of synthetic oligomers into binary superlattices at the atomic level is challenging. Here, we report a strategy for programming polar-π interactions in oligomeric peptoids, a class of sequence-defined peptidomimetics, facilitating the formation of homogeneous two-dimensional (2D) superlattices. N-2-phenylethyl and N-(2-perfluorophenyl)ethyl side chains, similar in size, but with contrasting electrostatic characteristics, were introduced at defined sequence positions to generate favorable dipolar aromatic interactions. The resulting nanosheets exhibit different crystal motifs depending on the side chain interactions: systems containing only one type of aromatic side chain form a parallel V-shaped motif driven by π-π interactions, whereas a combination of both types of aromatic side chains, either within one backbone or through the coassembly of two distinct peptoids, adopt an antiparallel V-shaped superlattice with higher thermal stability, driven by polar-π interactions. Cryogenic transmission electron microscopy directly resolved the packing arrangement of perfluorophenyl and phenyl rings in individual nanosheet superlattices, confirming that intermolecular polar-π interaction dominates the superlattice motifs and increases lattice stability. Molecular dynamics simulations and density functional theory calculations further substantiate the energetic favorability of polar-π interactions over π-π interactions, rationalizing the formation of homogeneous superlattices with enhanced thermal stability. Our discoveries establish a design principle for binary coassembly using sequence-defined oligomers, which enables control over unit cell geometry, lattice stability, and molecular registration through aromatic side chain polarization and sequence control. This ability to program atomic-scale binary superlattices opens new avenues for designing functional 2D soft materials.

Lee, Yen Jea [Lawrence Berkeley National Laborator↗
NASA NTRS2003

Perovskite Superlattices as Tunable Microwave Devices

Experiments have shown that superlattices that comprise alternating epitaxial layers of dissimilar paraelectric perovskites can exhibit large changes in permittivity with the application of electric fields. The superlattices are potentially useful as electrically tunable dielectric components of such microwave devices as filters and phase shifters. The present superlattice approach differs fundamentally from the prior use of homogeneous, isotropic mixtures of base materials and dopants. A superlattice can comprise layers of two or more perovskites in any suitable sequence (e.g., ABAB..., ABCDABCD..., ABACABACA...). Even though a single layer of one of the perovskites by itself is not tunable, the compositions and sequence of the layers can be chosen so that (1) the superlattice exhibits low microwave loss and (2) the interfacial interaction between at least two of the perovskites in the superlattice renders either the entire superlattice or else at least one of the perovskites tunable.

Christen, H. M.↗
DOE OSTI2024

Signature of Correlated Insulator in Electric Field Controlled Superlattice

On a two-dimensional crystal, a “superlattice” with nanometer-scale periodicity can be imposed to tune the Bloch electron spectrum, enabling novel physical properties inaccessible in the original crystal. While creating 2D superlattices by means of nanopatterned electric gates has been studied for band structure engineering in recent years, evidence of electron correlations-which drive many problems at the forefront of physics research-remains to be uncovered. Here, in this work, we demonstrate signatures of a correlated insulator phase in Bernal-stacked bilayer graphene modulated by a gate-defined superlattice potential, manifested as resistance peaks centered at integer multiples of single electron per superlattice unit cell carrier densities. The observation is consistent with the formation of a stack of flat low-energy bands due to the superlattice potential combined with inversion symmetry breaking. Our work paves the way to custom-designed superlattices for studying band structure engineering and strongly correlated electrons in 2D materials.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Tunneling calculations for GaAs-Al(x)Ga(1-x)As graded band-gap sawtooth superlattices

The transmission resonance spectra and tunneling current-voltage characteristics for direct conduction band electrons in sawtooth GaAs-Al(x)Ga(1-x)As superlattices are computed. Only direct-gap interfaces are considered. It is found that sawtooth superlattices exhibit resonant tunneling similar to that in step superlattices, manifested by correlation of peaks and regions of negative differential resistance in the current-voltage curves with transmission resonances. The Stark shift of the resonances of step-barrier superlattices is a linear function of the field, whereas in sawtooth superlattices under strong fields the shift is not a simple function of the field. This follows from the different ways in which the two structures deform under uniform electric fields: the sawtooth deforms into a staircase, at which field strength all barriers to tunneling are eradicated. The step-barrier superlattice always presents some barrier to tunneling, no matter how high the electric field strength.

Forrest, Kathrine↗
DOE OSTI2025

Anomalous Hall effect from inter-superlattice scattering in a noncollinear antiferromagnet

Superlattice formation dictates the physical properties of many materials, including the nature of the ground state in magnetic materials. Chemical composition is commonly considered to be the primary determinant of superlattice identity, especially in intercalation compounds. Nevertheless, in this work, we find that kinetic control of superlattice growth leads to the coexistence of disparate crystallographic domains within a compositionally perfect single crystal. We demonstrate that Cr1/4TaS2 is a noncollinear antiferromagnet in which scattering between majority and minority superlattice domains engenders complex magnetotransport below the Néel temperature, including an anomalous Hall effect. We characterize the magnetic phases in different domains, image their nanoscale morphology, and propose a mechanism for nucleation and growth using a suite of experimental probes coupled with first-principles calculations and symmetry analysis. These results provide a blueprint for the deliberate engineering of macroscopic transport responses via microscopic tuning of magnetic exchange interactions in superlattice domains.

Xie, Lilia S↗
DOE OSTI2026

Superlattice reflection signatures of the insulator–metal transition in V 3 O 5 thin films

Nanoelectronic systems that are inspired by the brain are increasingly looking to insulator–metal transition (IMT) materials as they can mimic the response characteristics of neurons to temperature changes so that these can be used in robotic and computational applications. V 3 O 5 has an insulator–metal transition at ∼430 or ∼80 K higher than VO 2 and provides a unique high-temperature opportunity for these types of applications. Here, in this work, we track the structural evolution of V 3 O 5 thin films across the IMT through conventional selected-area electron diffraction (SAED) and four-dimensional scanning TEM (4D-STEM), correlated with temperature-dependent resistance measurements. SAED patterns show reversible evidence of superlattice reflections associated with the IMT—present below T IMT and absent above it—consistent with the accompanying drop in resistance. At room temperature, nanobeam electron diffraction patterns further reveal three local configurations: (i) type I regions with clean patterns lacking superlattice reflections and spot splitting; (ii) type II regions exhibiting rows of superlattice reflections and split spots indicative of crystallographic variants; and (iii) type III regions with negligible superlattice reflections but larger spot splitting suggestive of overlapping domains of insulating and conducting phases likely driven by local lattice distortions. Upon heating, the superlattice reflections disappear between 413 and 453 K, concurrent with the resistance drop at T IMT , consistent with the emergence of a conducting phase. The overall diffraction geometry remains essentially unchanged up to 573 K, implying that relative domain orientations persist through the transition. These observations reveal nanoscale structural heterogeneity in V 3 O 5 thin films across the IMT and inform operation in regimes where mixed-phase textures are expected. A plausible indexing framework rationalizing the observed geometries is presented in the Discussion section, alongside its limitations and alternative interpretations.

25 ENERGY STORAGE↗
DOE OSTI2025

Excitons in fractionally filled moiré superlattices

Long-range Coulomb forces give rise to correlated insulating states when charge particles populate a moiré superlattice at certain fractional filling factors. Such behavior is characterized by a broken translation symmetry wherein particles spontaneously form a Wigner crystal. Here, focusing on the experimental findings of Xu et al. [Nature (London) 587, 214 (2020)], we present a theory that captures the correlated insulating state of a fractionally filled moiré superlattice through the energy shift and change in oscillator strength of the exciton absorption resonance. The theory shows that the experimental findings can only be supported if the electrons reside in a charge-ordered state (i.e., electrons are not randomly distributed among the sites of the moiré superlattice). Furthermore, we explain why the energy shifts of exciton resonances are qualitatively different in cases where the superlattice is nearly empty compared with a superlattice whose sites are doubly occupied.

excitons↗
NASA NTRS1983

Theory of silicon superlattices - Electronic structure and enhanced mobility

A realistic tight-binding band-structure model of silicon superlattices is formulated and used to study systems of potential applied interest, including periodic layered Si-Si(1-x)Ge(x) heterostructures. The results suggest a possible new mechanism for achieving enhanced transverse carrier mobility in such structures: reduced transverse conductivity effective masses associated with the superlattice band structure. For electrons in 100-line-oriented superlattices, a reduced conductivity mass arises intrinsically from the lower symmetry of the superlattice and its unique effect on the indirect bulk silicon band gap. An order of magnitude estimate of the range of mobility enhancement expected from this mechanism appears to be consistent with preliminary experimental results on Si-Si(1-x)Ge(x) superlattices.

Moriarty, J. A.↗
NASA NTRS1986

Optical constants of GaAs-AlGaAs superlattices and multiple quantum wells

The optical properties of GaAs-Al sub x Ga sub 1-xAs superlattices are calculated as a function of the frequency and superlattice structure. The comutations are performed using a partition method which combines the vectors k.p method with the pseudopotential technique. The influence of the super-structure on the electronic properties of the systems is accounted for by appropriate quantization conditions. The anisotropy and structure dependence of the dielectric constant result mainly from the contribution of the gamma region while the contributions of the other regions of the Brillouin zone are rather insensitive to the superlattice structure. The superlattice index of refraction values are shown to attain maxima at the various quantized transition energies, where for certain structures, the difference between the refractive indices of the superlattices and its corresponding Al sub x Ga sub 1-xAs alloy can be as large as 2%. In general results are in good agreement with the experimental data.

Kahen, K. B.↗
NASA NTRS1990

Intersubband absorption in Si(1-x)Ge(x/Si superlattices for long wavelength infrared detectors

Researchers calculated the absorption strengths for intersubband transitions in n-type Si(1-x)Ge(x)/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si(1-x)Ge(x)/Si supperlattice detectors is the ability to detect normally incident light; in Ga(1-x)Al(x)As/GaAs superlattices, intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. Researchers present detailed calculation of absorption coefficients, and peak absorption wavelengths for (100), (111) and (110) Si(1-x)Ge(x)/Si superlattices. Peak absorption strengths of about 2000 to 6000 cm(exp -1) were obtained for typical sheet doping concentrations (approx. equals 10(exp 12)cm(exp -2)). Absorption comparable to that in Ga(1-x)Al(x)As/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.

Rajakarunanayake, Yasantha↗
NASA NTRS2004

Chirped-Superlattice, Blocked-Intersubband QWIP

An Al(x)Ga(1-x)As/GaAs quantum-well infrared photodetector (QWIP) of the blocked-intersubband-detector (BID) type, now undergoing development, features a chirped (that is, aperiodic) superlattice. The purpose of the chirped superlattice is to increase the quantum efficiency of the device. A somewhat lengthy background discussion is necessary to give meaning to a brief description of the present developmental QWIP. A BID QWIP was described in "MQW Based Block Intersubband Detector for Low-Background Operation" (NPO-21073), NASA Tech Briefs Vol. 25, No. 7 (July 2001), page 46. To recapitulate: The BID design was conceived in response to the deleterious effects of operation of a QWIP at low temperature under low background radiation. These effects can be summarized as a buildup of space charge and an associated high impedance and diminution of responsivity with increasing modulation frequency. The BID design, which reduces these deleterious effects, calls for a heavily doped multiple-quantum-well (MQW) emitter section with barriers that are thinner than in prior MQW devices. The thinning of the barriers results in a large overlap of sublevel wave functions, thereby creating a miniband. Because of sequential resonant quantum-mechanical tunneling of electrons from the negative ohmic contact to and between wells, any space charge is quickly neutralized. At the same time, what would otherwise be a large component of dark current attributable to tunneling current through the whole device is suppressed by placing a relatively thick, undoped, impurity-free AlxGa1 x As blocking barrier layer between the MQW emitter section and the positive ohmic contact. [This layer is similar to the thick, undoped Al(x)Ga(1-x)As layers used in photodetectors of the blocked-impurity-band (BIB) type.] Notwithstanding the aforementioned advantage afforded by the BID design, the responsivity of a BID QWIP is very low because of low collection efficiency, which, in turn, is a result of low electrostatic- potential drop across the superlattice emitter. Because the emitter must be electrically conductive to prevent the buildup of space charge in depleted quantum wells, most of the externally applied bias voltage drop occurs across the blocking-barrier layer. This completes the background discussion. In the developmental QWIP, the periodic superlattice of the prior BID design is to be replaced with the chirped superlattice, which is expected to provide a built-in electric field. As a result, the efficiency of collection of photoexcited charge carriers (and, hence, the net quantum efficiency and thus responsivity) should increase significantly.

Gunapala, Sarath↗
DOE OSTI2025

Intercalation-Engineered Out-of-Plane Polarized van der Waals Ferromagnetic Superlattice with Room-Temperature Néel-Type Skyrmions

Superlattices (SLs) based on two-dimensional (2D) van der Waals (vdW) materials, abbreviated as 2D-SLs, have garnered significant attention due to their customizable properties. 2D-SLs can be engineered by mechanical stacking or chemical intercalation to achieve diverse forms of symmetry breaking, resulting in exotic phenomena like the quantum anomalous Hall effect and topological magnetism. Hitherto, broken symmetries in 2D-SLs have been widely produced within lateral planes or three dimensions. However, symmetry breaking along the vertical direction, specifically as an out-of-plane one-dimensional (1D) polarized superlattice, has not yet been achieved. Here, in this paper, we report a so far unseen out-of-plane 1D polarized vdW ferromagnetic superlattice achieved through an approach of two-step intercalation and de-embedding of chromium (Cr)-based 2D vdW magnets. The off-centering polarization of both intrinsic and intercalated Cr atoms in this (1 × 1 × 2) superstructure breaks the mirror symmetry vertically, yielding a Dzyaloshinskii–Moriya interaction (DMI). This results in high-density Néel-type magnetic skyrmions over a broad temperature range. Notably, sub-100 nm Néel-type skyrmions at room temperature (RT) can be achieved by tuning the Cr intercalation ratio, marking the first binary compound RT Néel-type skyrmionic vdW magnet. Our work expands the 2D-SL family with a class of out-of-plane 1D polarized ferromagnetic superlattice with tunable topological magnetism.

1D polarized superlattice↗
NASA NTRS2011

Superlattice Barrier Infrared Detector Development at the Jet Propulsion Laboratory

We report recent efforts in achieving state-of-the-art performance in type-II superlattice based infrared photodetectors using the barrier infrared detector architecture. We used photoluminescence measurements for evaluating detector material and studied the influence of the material quality on the intensity of the photoluminescence. We performed direct noise measurements of the superlattice detectors and demonstrated that while intrinsic 1/f noise is absent in superlattice heterodiode, side-wall leakage current can become a source of strong frequency-dependent noise. We developed an effective dry etching process for these complex antimonide-based superlattices that enabled us to fabricate single pixel devices as well as large format focal plane arrays. We describe the demonstration of a 1024x1024 pixel long-wavelength infrared focal plane array based the complementary barrier infrared detector (CBIRD) design. An 11.5 micron cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 ?m cutoff focal plane array are also presented.

superlattice↗
DOE OSTI2026

Electrostatic Superlattices Beyond 1:1 Stoichiometry

ABSTRACT Exotic nanoparticle superstructures can be accessed by harnessing nanoparticle softness and charge regulation, features often viewed as obstacles to structural control. Here, we show that regulated charge mismatch in polymer‐grafted nanoparticles enables the assembly of high‐stoichiometry cubic superlattices. By co‐tuning grafting density, particle size, and bulk composition, we realize ionic‐lattice analogues, such as and , as well as single‐component and superlattices without atomic counterparts. The superlattice has recently been identified theoretically as a photonic band‐gap lattice. These phases emerge from a 1:1 “parent” lattice when local charge neutrality cannot be satisfied, driving either progressive interstitial filling or reorganization into a larger basis. For instance, the systematic occupation of ZnS tetrahedral sites yields , while ligand‐swapping symmetry breaking converts CsCl into . Upon heating, the assemblies exhibit reversible lattice contraction and pronounced negative thermal expansion. Furthermore, the energetic penalty for defects increases with nanoparticle size, facilitating the scalable production of high‐quality, open superlattices for photonic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Atomic Alignment in PbS Nanocrystal Superlattices with Compact Inorganic Ligands via Reversible Oriented Attachment of Nanocrystals

Nanocrystals (NCs) serve as versatile building blocks for the creation of functional materials with NC self-assembly offering opportunities to enable novel material properties. Here, in this work, we demonstrate that PbS NCs functionalized with strongly negatively charged metal chalcogenide complex (MCC) ligands, such as Sn 2 S 6 4– and AsS 4 3– , can self-assemble into all-inorganic superlattices with both long-range superlattice translational and atomic-lattice orientational order. Structural characterizations reveal that the NCs adopt an unexpected edge-to-edge alignment, and numerical simulation clarifies that orientational order is thermodynamically stabilized by many-body ion correlations originating from the dense electrolyte. Furthermore, we show that the superlattices of Sn 2 S 6 4– -functionalized PbS NCs can be fully disassembled back into the colloidal state, which is highly unusual for orientationally attached superlattices with atomic-lattice alignment. The reversible oriented attachment of NCs, enabling their dynamic assembly and disassembly into effectively single-crystalline superstructures, offers a pathway toward designing reconfigurable materials with adaptive and controllable electronic and optoelectronic properties.

Landau-Ginzburg theory↗
NASA NTRS1983

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Moriarty, J. A.↗