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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

Here, we report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current–voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.

36 MATERIALS SCIENCE↗

Controller-Hardware-in-the-Loop Test Bed for Fast-Switching SiC-Based 50-kW PV Inverter

The recent advent of wideband gap power semiconductor devices will lay the path to the future power converters. These devices provide the advantage of high switching speed and lower losses. The high cost and high switching speeds of these devices provide a challenge in the development and validation of the fast switching inverter controls with accuracy of that of a hardware setup. In this paper an FPGA real-time simulator-based controller-hardware-in-the-loop (CHIL) testbed is used to verify the low-level and advanced inverter controls fast switching wide bandgap-based string photovoltaic inverter. The paper also includes development of the CHIL testbed, which is run at a time-step of 500 ns in order to implement 20 kHz switching frequency. The developed CHIL testbed is validated through experimental results from a three-phase, 50 kW, 480 VLLrms SiC devices based inverter.

14 SOLAR ENERGY↗

New trends in photonic switching and optical networking architectures for data centers and computing systems [Invited]

The rapid increases in data traffic coupled with user preferences are driving the data center and computing system service providers to offer energy-efficient, intelligent, flexible, cost-effective, high-capacity, and low-latency data services without added complexity to the users. Disaggregated heterogeneous reconfigurable computing systems realized by photonic switching and interconnects can enhance throughput and energy efficiency for artificial intelligence/machine learning (AI/ML) workloads, especially when aided by the AI/ML-enhanced control plane. Photonic switching and new optical networking architectures are expected to solve many of these challenging problems. This paper discusses new trends in photonic switching and optical network architectures for future data centers and computing systems summarized as follows: (1) flat reconfigurable disaggregated computing enabled by high-radix photonic switching and interconnects in data centers; (2) chiplet-based computing architectures empowered by embedded photonics toward heterogeneous reconfigurable computing; (3) nanosecond-scale photonic switching in data centers and computing systems; (4) AI/ML in self-driving, application-aware, and situation-aware data centers; (5) the emergence of flexible networking for cloud computing, edge computing, and split computing, as well as flexible networking for 5G/6G RF-optical networks; and (6) the deployment of embedded co-designed silicon photonics being considered for future data centers.

Yoo, S. J. Ben (ORCID:0000000274201871)↗

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗

Operation and Control of Soft Switching Solid State Transformer as a Virtual Synchronous Machine for Photovoltaic Application

Possibility for control and operation of a three-phase solid state soft switching transformer based as a virtual synchronous machine or synchronverter has been investigated in this paper. The soft switching solid state transformer is used as an interface between the ac grid and a photovoltaic power generation unit supported by a battery bank. The control architecture investigated in this paper is that of a synchronverter to achieve inertial support to the grid and local loads. The operation of the soft switching solid state transformer has also been investigated as a V S M during unbalanced/distorted grid voltage condition. Control objective to achieve oscillation free power transfer between the ports (photovoltaic, battery and grid) has been achieved. The presented architecture has been verified for several important case studies via numerical simulations based on MATLAB/Simulink domain.

grid current controller↗

Advanced EMT and Phasor-Domain Hybrid Simulation With Simulation Mode Switching Capability for Transmission and Distribution Systems

Conventional electromagnetic transient (EMT) and phasor do-main hybrid simulation approaches presently exist for transmission system level studies and their simulation efficiency is generally constrained by the EMT simulation. With an increasing number of distributed energy resources and non-conventional loads being installed in the distribution systems, it is imperative to ex-tend the hybrid simulation application to include distribution systems and integrated transmission and distribution systems. Meanwhile, it is equally important to improve the simulation efficiency as the modeling scope and complexity of the detailed system in the EMT simulation increases. To meet both requirements, this paper introduces an advanced electromagnetic transient (EMT) and phasor domain hybrid simulation approach. This approach has two outstanding features: 1) a comprehensive phasor domain modeling framework which supports positive-sequence, three-sequence, three-phase and mixed three-sequence/three-phase representations; 2) a robust and flexible simulation mode switching scheme which enables simulation switching from hybrid simulation mode back to pure phasor domain dynamic simulation mode to achieve significantly improved simulation efficiency. The proposed method has been tested on integrated transmission and distribution systems, and the results show that with the developed simulation switching feature, the total computational time is significantly reduced compared to running the hybrid simulation for the whole simulation period, while good accuracy is maintained.

Huang, Qiuhua (ORCID:0000000184577429)↗

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials]

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag 4 In 3 Sb 67 Te 26 . Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Q-switched and gain-switched Fe:ZnSe lasers tunable over 360–515 µm

We report on room temperature gain-switched and Q-switched Fe:ZnSe lasers tunable over 3.60–5.15 µm pumped by radiation of an 2.94 µm Er:YAG laser. The maximum output energy was measured to be 5 mJ under 15 mJ of pump energy in gain-switched regime. We also demonstrated a mechanically Q-switched regime of oscillation of Fe:ZnSe lasers. This approach could be attractive for the development of high-energy short-pulse solid-state mid-IR systems operating over 3.6–5.2 µm spectral range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Deep Optical Switching on Subpicosecond Timescales in an Amorphous Ge Metamaterial

Active nanostructured optical components show promise as potential building blocks for novel light-based computing and data processing architectures. However, nanoscale all-optical switches that have low activation powers and high-contrast ultrafast switching have been elusive so far. Here, pump–probe measurements performed on amorphous-Ge-based micro-resonator metasurfaces that exhibit strong resonant modes in the mid-infrared are reported. Relative change is observed in transmittance of ΔT/T ≈ 1 with picosecond (down to τ ≈ 0.5 ps) free carrier relaxation rates, obtained with very low pump fluences of 50 μJ cm –2 . In this work, these observations are attributed to efficient free carrier promotion, affecting light transmittance via high quality-factor optical resonances, followed by an increased electron–phonon scattering of free carriers due to the amorphous crystal structure of Ge. Full-wave simulations based on a permittivity model that describes free-carrier damping through crystal structure disorder find excellent agreement with the experimental data. These findings offer an efficient and robust platform for all-optical switching at the nanoscale.

36 MATERIALS SCIENCE↗

Reversible Morphology Switching of Colloidal Particles

A facile method has been discovered that enables switching of non-cross-linked poly(styrene) (Nx-PS) colloidal particle morphologies, including spherical and anisotropic convex- convex, plano-convex, and concave-convex. The anisotropic morphologies can be achieved readily from spherical Nx-PS particles through control of annealing time at elevated temperatures or surfactant concentration. These anisotropic morphologies can be reversed to spherical at lower temperatures, and reversible morphology switching between any pair of anisotropic morphologies also can be attained. This approach to particle morphology switching establishes a straightforward method for the synthesis of designer anisotropic particles using commercially available spherical particles as starting materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Switch Opening and Exchange Method for Stochastic Distribution Network Reconfiguration

The purpose of distribution network reconfiguration (DNR) is to determine the optimal topology of an electricity distribution network, which is an efficient measure to reduce network power losses. Electricity load demand and photovoltaic (PV) output are uncertain and vary with time of day, and will affect the optimal network topology. Single-hour deterministic DNR is incapable of handling this uncertainty and variability. Therefore, this paper proposes to solve a multi-hour stochastic DNR (SDNR). Existing solution methods for DNR are either inaccurate or excessively time-consuming, and are therefore incapable of solving multi-hour SDNRs for large distribution networks. In this regard, a switch opening and exchange (SOE) method is proposed. Starting from a looped network with all switches closed, the SOE consists of three steps. The first step is to sequentially open the switches until all of the loops are opened. The second and third steps modify the status of branches obtained in the first step to obtain better radial topologies. Five test systems are used to validate the accuracy and fast solution speed of the SOE and the superiority of multi-hour SDNR over single-hour deterministic DNR.

distribution network reconfiguration↗