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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

New trends in photonic switching and optical networking architectures for data centers and computing systems [Invited]

The rapid increases in data traffic coupled with user preferences are driving the data center and computing system service providers to offer energy-efficient, intelligent, flexible, cost-effective, high-capacity, and low-latency data services without added complexity to the users. Disaggregated heterogeneous reconfigurable computing systems realized by photonic switching and interconnects can enhance throughput and energy efficiency for artificial intelligence/machine learning (AI/ML) workloads, especially when aided by the AI/ML-enhanced control plane. Photonic switching and new optical networking architectures are expected to solve many of these challenging problems. This paper discusses new trends in photonic switching and optical network architectures for future data centers and computing systems summarized as follows: (1) flat reconfigurable disaggregated computing enabled by high-radix photonic switching and interconnects in data centers; (2) chiplet-based computing architectures empowered by embedded photonics toward heterogeneous reconfigurable computing; (3) nanosecond-scale photonic switching in data centers and computing systems; (4) AI/ML in self-driving, application-aware, and situation-aware data centers; (5) the emergence of flexible networking for cloud computing, edge computing, and split computing, as well as flexible networking for 5G/6G RF-optical networks; and (6) the deployment of embedded co-designed silicon photonics being considered for future data centers.

Yoo, S. J. Ben (ORCID:0000000274201871)↗
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
DOE OSTI2022

Operation and Control of Soft Switching Solid State Transformer as a Virtual Synchronous Machine for Photovoltaic Application

Possibility for control and operation of a three-phase solid state soft switching transformer based as a virtual synchronous machine or synchronverter has been investigated in this paper. The soft switching solid state transformer is used as an interface between the ac grid and a photovoltaic power generation unit supported by a battery bank. The control architecture investigated in this paper is that of a synchronverter to achieve inertial support to the grid and local loads. The operation of the soft switching solid state transformer has also been investigated as a V S M during unbalanced/distorted grid voltage condition. Control objective to achieve oscillation free power transfer between the ports (photovoltaic, battery and grid) has been achieved. The presented architecture has been verified for several important case studies via numerical simulations based on MATLAB/Simulink domain.

grid current controller↗
DOE OSTI2021

Deep Optical Switching on Subpicosecond Timescales in an Amorphous Ge Metamaterial

Active nanostructured optical components show promise as potential building blocks for novel light-based computing and data processing architectures. However, nanoscale all-optical switches that have low activation powers and high-contrast ultrafast switching have been elusive so far. Here, pump–probe measurements performed on amorphous-Ge-based micro-resonator metasurfaces that exhibit strong resonant modes in the mid-infrared are reported. Relative change is observed in transmittance of ΔT/T ≈ 1 with picosecond (down to τ ≈ 0.5 ps) free carrier relaxation rates, obtained with very low pump fluences of 50 μJ cm –2 . In this work, these observations are attributed to efficient free carrier promotion, affecting light transmittance via high quality-factor optical resonances, followed by an increased electron–phonon scattering of free carriers due to the amorphous crystal structure of Ge. Full-wave simulations based on a permittivity model that describes free-carrier damping through crystal structure disorder find excellent agreement with the experimental data. These findings offer an efficient and robust platform for all-optical switching at the nanoscale.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CDFQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1.17x larger turn-on loss compared to the CS-FQS, while the CS-FQS exhibited a 1.52x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.

Silicon Carbide, Bidirectional Switch, Switching P↗
DOE OSTI2023

Safety Related Concerns with Installation and Use of Switch-Rated Plug/Receptacle Combinations in Lieu of Metal-Enclosed Disconnect Switches

The manufacturers of Nationally Recognized Testing Laboratory (NRTL) listed, switch-rated, plug and receptacle combinations tout their convenience, reliability, efficiency, and compliance with both the National Fire Protection Association (NFPA) 70®, National Electric Code (NEC), and National Fire Protection Association 70E®, The Standard for Electrical Safety in the Workplace, as advantages to using these products in lieu of traditional metal-enclosed disconnect switches. The purpose of this paper is to raise awareness of several unintended consequences that can result when replacement involves high energy cord and plug connected equipment. This paper describes several possible issues in complying with the NFPA 70 Articles 110 and 400 and NFPA 70E Articles 110 and 130 that should be considered when using load rated plug/receptacle combinations. This paper is intended to address high energy circuits typically associated with 480 volt pin and sleeve type connections in applications where incident energy levels may exceed 1.2 calories/centimeter² (cal/cm²).

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2022

Electronegative metal dopants improve switching variability in Al 2 ⁢O 3 resistive switching devices

Resistive random-access memories are promising for nonvolatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this paper, we show that doping an oxide electrolyte, Al 2 ⁢O 3 , with electronegative metals makes resistive switching significantly more reproducible, surpassing the reproducibility requirements for obtaining reliable hardware neuromorphic circuits. Based on density functional theory calculations, the underlying mechanism is hypothesized to be the ease of creating oxygen vacancies in the vicinity of electronegative dopants due to the capture of the associated electrons by dopant midgap states and the weakening of Al-O bonds. These oxygen vacancies and vacancy clusters also bind significantly to the dopant, thereby serving as preferential sites and building blocks in the formation of conducting paths. Throughout this work, we validate this theory experimentally by implanting different dopants over a range of electronegativities in devices made of multiple alternating layers of Al 2 ⁢O 3 and WN and find superior repeatability and yield with highly electronegative metals, Au, Pt, and Pd. These devices also exhibit a gradual SET transition, enabling multibit switching that is desirable for analog computing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Science & Technology - Other Topics↗
DOE OSTI2025

Testing of Novel Semiconductor Opening Switches Using Magnetic Switching

The performance of semiconductor opening switch (SOS) diodes with different doping profiles is assessed with the primary aim of enhancing or substituting hard-to-find devices. SOS devices are capable of providing long lifetime, gigawatt level pulses in generators with risetimes on the nanosecond scale with pulse widths on the order of 20 ns. An experimental testbed is described which allows for rapid testing of diodes with control of the forward pumping time which is a crucial parameter of SOS diodes. A saturable pulse transformer provides both the initial voltage multiplication and reverse current pulse required to drive SOS diodes. Voltage multiplication ratios of 16:1 were achieved with a modest charging voltage of 800 V and simple circuitry. With current densities of up to 1.4 kA ⋅ cm -2 , the testbed produces 10 kV output pulses into a 56 Ω load with a pulsewidth of 16 ns and delivered power of up to 1.9 MW. These novel devices are compared to legacy SOS diodes originating from Russia, with one of the profiles yielding increased performance. Finally, these profiles are studied in hopes of creating manufacturing demand to augment the availability of these useful devices.

drift step recovery diodes↗
DOE OSTI2021

Submonolayer Is Enough: Switching Reaction Channels on Pt/SiO 2 by Atomic Layer Deposition

The reaction mechanism of CO 2 with H 2 is studied on platinum nanoparticles supported on fumed silica. It is found that platinum nanoparticle size, reaction temperature, and metal oxide promoters play important roles in determining the reaction rate and the mechanism of forming surface carbonyl species. Metal oxide promoters consist of sub-monolayer titanium oxide or aluminum oxide overcoated onto the catalysts by atomic layer deposition (ALD). Furthermore, these alter the CO formation rate, influence the adsorption and desorption behavior, and switch the surface reaction channel from Eley-Rideal to Langmuir-Hinshelwood mechanism due to an enhancement of CO 2 affinity to the metal-metal oxide interface. At the temperatures relevant for catalytic turnover, ALD overcoating significantly increases catalytic activity in CO 2 hydrogenation to CH 4 and CO, while the identity of the oxide overcoat helps control product selectivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Novel Quadratic High Gain Boost Converter With Adaptive Soft-Switching Scheme and Reduced Conduction Loss

In this article, an improved soft-switching quadratic boost converter is proposed. Instead of inserting an additional active clamp or auxiliary zero-voltage transition circuit at the switching node, the proposed topology connects the high-voltage switching node to the input diode node by replacing one of the input diodes with a low-rated switch. The proposed topology can attain soft-switching condition for all the switches and input diode turns- off under zero-current switching (ZCS). The operation of input-side switch not only aids zero-voltage switching (ZVS) turn- on for the main switch but also helps in reducing the conduction loss. Also, the input-side switch operates under ZCS turn- on and ZVS turn- off , making it a loss economical solution. An adaptive timing scheme for driving the input switch is proposed, which can ensure soft-switching condition under varying gain and load range. The detailed operational modes, analysis, and design considerations of the proposed topology are presented. A 250 W hardware prototype is built to validate the performance of the proposed converter operating at 100 kHz switching frequency. Results with adaptive soft-switching scheme shows that the converter is modulated to achieve its best efficiency condition under various system conditions. Furthermore, a peak efficiency of 96.1% at 155 W and efficiencies above 95.75% over a wide load range are achieved using all Si devices.

14 SOLAR ENERGY↗
DOE OSTI2021

Switch-connected Dragonfly network

A switch-connected dragonfly network and method of operating. A plurality of groups of row switches is organized according to multiple rows and columns, each row including multiple groups of row switches connected to form a two-level dragonfly network. A plurality of column switches interconnect groups of row switches along respective columns, a column switch associated with a corresponding group of row switches in a row. A switch port with a same logical port on a row switch at a same location in each group along the respective column connects to a same column switch. The switch-connected dragonfly network is expandable by adding additional rows, an added row comprising a two-level dragonfly network. A switch group of said added row associated with a column being connects to an available port at an existing column switch of said column by corresponding added S path link with no re-cabling of the switched network required.

Heidelberger, Philip↗
DOE OSTI2023

Configuration of an optical switch fabric using machine learning

An optical switch fabric comprises two or more optical switch elements. The optical switch elements are configured in a topology. A switch control has a plurality of bias control signals. The switch control can address one or more of the optical switch elements and can apply one of the bias control signals to bias of the addressed optical switch element to establish a switch setting. The topology and switch settings determine how each of one of the inputs is connected to each of one of the outputs of the optical switch fabric. The switch settings are determined by a machine learning process which includes a model creation. The model can be made to adapt dynamically during optical switch fabric operation.

Dupuis, Nicolas↗